ag | Ves = T 08 Vos = 20V Ros(on}. DRAIN-TO-SOURCE ON RESISTANCE (OHMS) 06 - -t. 05 J l -+- TD voce MEASURED WITH CURRENT o4 PULSE OF 2.0 us CURATION 4 INITIAL Ty = 25C. (HEATING , EFFECT OF 2.0 us PULSE IS MINIMAL} 03 ae. 1 1 1 L 0 10 20 30 40 50 60 70 Ip. ORAIN CURRENT (AMP -RES) Fig. 12 Typical On-Resistance Vs. Drain Current 149 \ \ Ma \ \ 60 Pp. POWER DISSIPATION (WATTS} 40 { \ + | 0 20 40 60 go 100 120,140 Tc CASE TEMPERATURE (C) Fig. 14 Power Vs. Temperature Derating Curve Von ADJUST Rt TO OBTAIN $2 SPECIFIED Ip at Vos purse GENERATOR 102 source t | IMPEDANCE L___f Fig. 17 Switching Time Test Circuit BATTERY |! ] Standard Power MOSFETs IRFP450, IRFP451, IRFP452, IRFP453 15 IRFP450, 451 9 IRFP452, 453 ig, ORAIN CURRENT (AMPERES) Q 25 50 75 100 126 150 Tc, CASE TEMPERATURE (C) Fig. 13 Maximum Drain Current Vs. Case Temperature VARY ty TO OBTAIN REQUIRED PEAK 1, Vgg = 10V tp E}=O0.5BVpgg Ec = 0.75 BVggg Fig. 15 Clamped Inductive Test Circuit Vos CURRENT SSOLATED REGULATOR SUPPLY) | SAME TYPE RV = AS DUT 0 2Qut SO KE: | 15 mA 0 wee . O-Vos CURRENT CURRENT SAMPLING SAMPLING RESISTOR RESISTOR Fig. 18 - Gate Charge Test Circuit 3-323Standard Power MOSFETs File Number 2331 IRFP450, IRFP451, IRFP452, IRFP453 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE 12 A and 13 A, 450 V - 500 V rpsiom = 0.4 Q and 0.5Q D Features: a SOA is power-dissipation limited w Nanosecond switching speeds aw Linear transfer characteristics G @ High input impedance m Majority carrier device s 9208-43357 TERMINAL DIAGRAM The IRFP450, IRFP451, IRFP452, and IRFP453 are n-channel enhancement-mode silicon-gate power field- effect transistors designed for applications such as switch- ing regulators, switching converters, motor drivers, relay drivers, and drivers for high-power bipolar switching tran- TERMINAL DESIGNATION sistors requiring high speed and low gate-drive power. poource These types can be operated directly from integrated LJ > circuits. DRAIN The IRFP-types are supplied in the JEDEC TO-247 plastic DRAIN O package. _ > i x TOP VIEW GATE JEDEC TO-247 Absolute Maximum Ratings Pi ts : IRFP450 IRFP451 IRFP452 IRFP453 Units Vos Drain - Source Voltage @ 500 450 500 450 V Voar Drain - Gate Voltage (Ras = 20 KN) @ 00 450 500 450 v lp @ Te = 26C Continuous Drain Current 13 13 12 12 A lo @ Te = 100C Continuous Drain Current 8.0 8.0 7.0 7.0 A tom Pulsed Drain Current @ 52 52 48 48 A Vas Gate - Source Voltage +20 v Pp @ Tc = 25C Max. Power Dissipation 150 (See Fig. 14) Ww Linear Derating Factor 1.2 (See Fig. 14) w/c hse Inductive Current, Clamped @ 52 [| 52 | 4 | 48 A Ty Operating Junction and a Tato Storage Temperature Range 55 to 150 c Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s) C 3-319Standard Power MOSFETs IRFP450, IRFP451, IRFP452, IRFP453 Electrical Characteristics @ Tc = 25C (Unless Otherwise Specified) P; fi Type Min. | Typ. | Max. | Units Test Conditions BVoss Drain ~ Source Breakdown Voltage lnepace 500 _ _ Vv Vas = OV F epacg | 450 | | | Vv | to=250ua Vesan Gate Threshold Voltage ALL 2.0 = 4.0 Vv Vos = Ves, Ip = 2504 A loss Gate-Source Leakage Forward ALL _ _ 100 nA Vos = 20V loss Gate-Source Leakage Reverse ALL = = -100 nA Vos = -20V lpss Zero Gate Voltage Drain Current - 250 BA Vos = Max. Rating, Ves = OV ALL = 7000 | A _| Vos = Max. Rating x 0.8, Vas = OV, Te = 125C loom On-State Drain Current @ IRFP450 13 _ _ A IRFP451 Vos > Ipton X Rosion max Vas = 10V inFP452 | 45 A IRFP453 7 _ Rosen Static Drain-Source On-State IRFP450 _ 03 0.4 Q Resistance @ IRFP451 " _ _ Ves = 10V, ln = 7.0A IRFP452 04 05 Oo IRFP453 " . Qu Forward Transconductance ALL 6.0 11 _ S@)_|_ Vos > lorom x Rostonmes. fo = 7.0A Css Input Capacitance ALL = 2000 = pF Ves = OV, Vos = 25V, f = 1.0 MHz Coss Output Capacitance ALL 400 = pe See Fig. 10 Cre Reverse Transfer Capacitance ALL = 100 = pe tation Turn-On Delay Time ALL _ = 35 ns Vop = 210V, Ib = 7.0A, Zo = 4.72 te Rise Time ALL _ _ 50 ns See Fig. 17 laiom _Turn-Off Delay Time ALL = - 150 ns (MOSFET switching times are essentially tt Fall Time ALL _ 70 ns independent of operating temperature.) Qy Total Gate Charge ALL _ 82 140 nc Vas = 10V, lo = 16A, Vos = 0.8V Max. Rating. (Gate-Source Pius Gate-Drain) See Fig. 18 for test circuit. (Gate charge is Qos Gate-Source Charge ALL _ 40 60 nc essentially independent of operating Qga___ Gate-Drain (Miller) Charge ALL = 42 |_63 | nc | temperature.) Lo Internal Drain Inductance ALL ~ 5.0 _ nH Measured between Modified MOSFET the contact screw on symbol showing the header that is closer to | internal device source and gate pins inductances Q and center of die. ls internal Source Inductance ALL - 12.5 _ nH Measured from the a source pin, 6 mm 6 (0.25 in.) from Ls header and source bonding pad. 5 Thermal Resistance RinJC Junction-to-Case ALL = _ 0.83 | C/W RinCS_ _Case-to-Sink ALL _ 0.1 _- C/W _| Mounting surface flat, smooth, and greased. RnJA Junction-to-Ambient ALL _- _ 30 C/W | Free Air Operation Source-Drain Diode Ratings and Characteristics Is Continuous Source Current IRFP450 _ _ 13 A Modified MOSFET symbol (Body Diode) IRFP451 showing the integral 2 IRFP452 reverse P-N junction rectifier. iRFP453 | = 12 A \sm Pulse Source Current \RFP450 _ _ 52 A a (Body Diode) @ IRFP451 IRFP452 IRFP4s3 | 7 | 8 A Vsp Diode Forward Voitage @ (RFP450 9R0, = = iR-Pas1 | - 1.4 V_ | Te = 25C, Is = 13A, Vas = OV IRFP452 _ - _ IREP453 - _ 13 v Te = 25C, Is = 12A, Vas = OV tr Reverse Recovery Time ALL _ 1300 ns Ty = 150C, le = 13A, dle/dt = 100A/us Qrea Reverse Recovered Charge ALL 7.4 oa uC Ty = 180C, Ip = 13A, die/dt = 100A/ys ton Forward Turn-on Time ALL Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by Ls + Lo. Ts = 28C to 150C. @ Puise Test: Pulse width < 300us, Duty Cycle < 2%. Repetitive Rating: Pulse width limited by max. junction temperature. See Transient Thermal Impedance Curve (Fig. 5). @L = 100 wH (See Fig. 15) 3-320Zensc(t/Ainuc. NOAMALIZED EFFECTIVE TRANSIENT THERMAL IMPEDANCE (PER UNIT) Standard Power MOSFETs IRFP450, IRFP451, IRFP452, IRFP453 20 Ty = -80C | Ty = 250C Vos >! d(on) * Roston) max. 80 ws PULSE TEST 20 Ty = 125C us PULSE TEST ' { 1 t 1 a nn Ty = 1289C @ Ty = 2500 tg, DRAIN CURRENT {AMPERES} (9. DRAIN CURRENT (AMPERES) Ty = -509C ~ 4.0V 0 50 100 159 200 250 300 0 1 2 a 4 5 8 7 8 Vos, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Vgg. GATE-TO-SOURCE VOLTAGE (VOLTS) Fig. 1 Typical Output Characteristics Fig. 2 Typical Transfer Characteristics Vgg = 10V 51 AREA IS LIMIT JAF P452, 53 N = IRFP450, 51 @ a = ic IRFP452, 53 we = = < < _ - 2 Zz w F x x 2 3 z z a ft = a a os Te = 25C ~ Ty> 150C MAX Rinse + 0.83 KW SINGLE PULSE IRFP4S1, 53 {RFP450, 52 3.5V 1 0 1 2 3 4 5 10 2 5 10 20 50 100 200 500 Vs, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Vos. GRAIN TO-SOURCE VOLTAGE (VOLTS) Fig. 3 Typical Saturation Characteristics Fig. 4 Maximum Safe Operating Area as a2 o.1 fot pete 12. 0.05 1. DUTY FACTOR..O= it SINGLE PULSE {TRANSIENT THERMAL IMPEDANCE) ; 2 PER UNIT BASE = Aypag = 083 066. COW o 2 Nn oor 3. Tym - Te = Pom Ztnsclt) 15 2 5 ws 2 5 3 2 2 2 5 1-12 5 10 2 5 10 ty, SQUARE WAVE PULSE DURATION (SECONDS) Fig. 5 Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse Duration 3-321Standard Power MOSFETs IRFP450, IRFP451, IRFP452, IRFP453 %,. TRANSCONDUCTANCE (SIEMENS} 20 Ty = -800C Ty = 259C Ty = 1250C n 80 ws PULSE TEST 10 18 20 Ip. DRAIN CURRENT (AMPERES) Vas > !O (on) * Fos(on) max. 25 Fig. 6 Typical Transconductance Vs. Drain Current BVoss, DRAIN TO-SOURCE BREAKOOWN VOLTAGE C, CAPACITANCE (pF) Fig. 10 Typical Capacitance Vs. Drain-to-Source Voltage 3-322 (NORMALIZED) 4.28 a 9 o o o oo a 0.75 -4 0 0 40 80 120 Ty. JUNCTION TEMPERATURE (C) Fig. 8 Breakdown Voltage Vs. Temperature 4000 Ciss = Cys + Cyg. Cas SHORTED Cry = Coa Ves=0 ' f= 1 MH? 3200 = Cds + Cog 2400 1600 800 0 10 20 30 40 Vos. ORAIN-TO-SOURCE VOLTAGE (VOLTS) 160 50 s ~ oo o N on ing. REVERSE DRAIN CURRENT {AMPERES} " Ty = 1809C Ty = 150C Ty = 25C 1 2 3 4 Vgp, SOURCE-TO-ORAIN VOLTAGE (VOLTS) Fig. 7 Typical Source-Drain Diode Forward Voltage Rogsion). DRAIN TO- SOURCE ON RESISTANCE (NORMALIZED) Vgs = 10V i | Ipg = 5A i 1 -40 a 40 80 120 160 Ty, JUNCTION TEMPERATURE (C) Fig. 9 ~ Normalized On-Resistance Vs. Temperature 20 a ws Vgs. GATE TO-SQURCE VOLTAGE (VOLTS) S Vpg * 100V ' t Vos = 250V ! ! Vos = 400V Ip = 164 FOR TEST CIRCUIT SEE FIGURE 18 28 56 64 112 140 Qg, TOTAL GATE CHARGE (nC) Fig. 11 Typical Gate Charge Vs. Gate-to-Source Voltage