T4-LDS-0220, Rev. 1 (111514) ©2011 Microsemi Corporation Page 1 of 5
1N821-1 thru 1N829A-1
Available on
commercial
versions
6.2 & 6.55 Volt ZENE R RE FERENCE DIODES
Qualified per MIL-PRF-19500/159
*Quali fied Levels:
JAN, JANT X,
JANTXV and JANS
(available on some part
numbers)
DESCRIPTION
The popular 1 N 821 thru 1N829A ser ies of Zero-TC Ref er enc e D iodes p r ovides a selection of
both 6.2 V and 6.55 V nominal volt ages and tem peratu r e coefficien ts to as l ow as 0.0005 %/oC
for minimal voltage ch ange with temperat ure wh en operated at 7.5 m A. These gl ass axial-
leaded DO-35 r eferenc e diodes ar e opti onall y avai lable with an internal-metallurgical-bond as
well as RoHS c ompliant version. Th i s type of bonded Zener pac kage con stru cti on is also
availab le in JAN, JANTX, and JANTX V military qualifi cations wher e the RoHS compliant “e3”
is not an option. M i crosemi also off er s numerous other Zener R eference Diode products for a
var i ety o f other voltages u p t o 200 V.
DO-35 (DO-204AH)
Package
Also available in:
DO-213AA MELF
(s urf ace mount)
1N821UR-1 – 1N829AUR-1
Important: For the latest infor mation, vis it our website http://www.microsemi.com.
FEATURES
• JEDEC registered 1N821 thru 1N829 series.
• Lowered Zener impedance option available.
• Reference voltage selection of 6.2 V & 6.55 V +/-5% with further tight tolerance options on
commercial at lower voltage. (Excludes 1N826 and 1N828.)
• Temperature compensated.
• I nter nal meta llurgi cal bond.
• Double plug cons truction.
• *JAN, JANTX, JANTXV and JANS qualific ation per MIL-PRF-19500/159 available on 1N821, 823,
825, 827 and 829.
• RoHS compliant versions available (commercial grade only).
APPLICATIONS / BENEFITS
• Provides m inimal voltage changes over a broad temperature range.
• For instrumentation and other circuit designs requiring a stable voltage reference.
• Maximum temperature coeffic ient selections avail able from 0.01%/ºC to 0.0005%/ºC.
• Tight reference voltage tolerances available on commercial with center nominal value of 6.2 V by
adding designated tolerance such as 1%, 2%, 3%, etc. after the part number for identification.
(Excludes 1N826 and 1N828.)
• Flexible axial-lead mounting terminals.
• Non-sensitive to ESD per MIL-STD-750 method 1020.
• Typical low capacitance of 100 pF or less.
MAXIMUM RATINGS
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
1-800-446-1158
Tel: (978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters/Test Conditions
Symbol
Value
Unit
Junction and Storage temperature
TJ and TSTG
-55 to +175
oC
Power Dissipation (1)
PD
500
mW
Maximum Zener Current
IZM
70
mA
Solder Pad Temperatures at 10 s
TSP
260
oC
Notes: 1. @ TL = 25 oC and maxi m um current IZM of 70 mA. F or optimum vol tage-temperature stability, IZ = 7.5
mA (less than 50 mW in dissipated power). Derate at 3.33 mW/oC above TA = +25 oC.
T4-LDS-0220, Rev. 1 (111514) ©2011 Microsemi Corporation Page 2 of 5
1N821-1 thru 1N829A-1
M ECHANICAL and PACKAGING
• CASE: Hermetically seal ed glass case. DO-35 (DO-204AH) package.
• TERMINALS: Tin-lead (military) or RoHS compl iant annealed matte-tin plating (co mmercia l grade only) solderable per MIL-STD-
750, method 2026.
• MARKING: Part number and cathode band (except double anode 1N822 and 1N824).
• POLARITY: Reference diode to be operated with the banded end posi tive with respect to the opposite end.
• TAPE & REEL option: Standard per EIA -296 (add “TR” suffix to part number). Consult factory for quantities.
• WEIGHT: 0.2 grams.
• See Package Dimensions on last page.
PART NOMENCLATURE
Applicable to: JAN, JANTX, JANTXV and JANS 1N8 21 , 1N 8 23, 1N825, 1N82 7, an d 1N 82 9 onl y:
JAN 1N821 -1
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
JANS = JANS Level
Blank = Commercial
Metallurgical Bond
JEDEC type number
(see Electrical Characteristics
table)
Applicable to: commercial 1N821, 1N823, 1N825, 1N827, and 1N829 onl y :
1N821 A -1 -1% (e3)
JEDEC type number
(see Electrical Characteristics
table)
Zener Impedance
A = 10 ohms
Blank = 15 ohms
Metallurgical Bond
RoHS Compliance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
Tighter voltage tolerance
1%
2%
3%
Applicable to: 1N822 and 1N824 only:
1N822 -1 -1% (e3)
JEDEC type number
(see Electrical Characteristics
table)
Metallurgical Bond
RoHS Compliance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
Tighter voltage tolerance
1%
2%
3%
Continued on next page.
T4-LDS-0220, Rev. 1 (111514) ©2011 Microsemi Corporation Page 3 of 5
1N821-1 thru 1N829A-1
Applicable to: 1N826 and 1N828 only:
1N826 -1 (e3)
JEDEC type number
(see Electrical Characteristics
table)
Metallurgical Bond
RoHS Compliance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
SYMBOL S & DEFI NITIONS
Symbol
Definition
IR
Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and temperature.
IZ, IZT, IZK
Regulator Current: The dc regulator current (IZ), at a specified test point (IZT), near breakdown knee (IZK).
VZ
Zener Vol tage: The Zener voltage the device will exhibit at a specified current (IZ) in its breakdown region.
ZZT or ZZK
Dynamic Impedance: The small signal impedance of the diode when biased to operate in its breakdown region at a
specified rm s current modul ation (typically 10% of IZT o r IZK) and superimposed on IZT o r I ZK respectively.
ELECTRICAL CHARACTERISTICS @ 25oC (unles s otherwis e specified )
JEDEC
TYPE
NUMBER
(Notes
1 & 5)
ZENER
VOLTAGE
VZ @ I ZT
(Not e 1 an d 4)
ZENER
TEST
CURRENT
IZT
MAXIMUM
ZENER
IMPEDANCE
ZZT @ I ZT
(Note 2)
MAXIMUM
REVERSE
CURRENT
IR @ 3 V
VOLTAGE
TEMPERATURE
STABILITY
(
∆
VZT MAX)
-55oC to +100oC
(Not e 3 an d 4)
EFFECTIVE
TEMPERATURE
COEFFICIENT
α
VZ
Volts
mA
Ohms
µA
mV
% / oC
1N821
1N821A
5.89-6.51
5.89-6.51
7.5
7.5
15
10
2
2
96
96
0.01
0.01
1N822†
5.9-6.5
7.5
15
2
96
0.01
1N823
1N823A
5.89-6.51
5.89-6.51
7.5
7.5
15
10
2
2
48
48
0.005
0.005
1N824†
5.9-6.5
7.5
15
2
48
0.005
1N825
1N825A
5.89-6.51
5.89-6.51
7.5
7.5
15
10
2
2
19
19
0.002
0.002
1N826
6.2-6.9
7.5
15
2
20
0.002
1N827
1N827A
5.89-6.51
5.89-6.51
7.5
7.5
15
10
2
2
9
9
0.001
0.001
1N828
6.2-6.9
7.5
15
2
10
0.001
1N829
1N829A
5.89-6.51
5.89-6.51
7.5
7.5
15
10
2
2
5
5
0.0005
0.0005
† Double Anode: Electrical specifications apply under both bi as pola rities.
NOTES: 1. Add a “-1” suffix for internal metallurgical bon d. When ordering devices with tighter tolerances than specified for the VZ
v oltage nominal of 6.2 V, add a hyphened suffix to the part number for desired tolerance, e.g. 1N827-1-2%, 1N829-1-1%,
1N829A-1% , 1N82 9A -1-1%, etc.
2. Zener i mpe da nce is me as ured by s uperi mpo sing 0.7 5 mA ac rms on 7.5 mA dc @ 25 oC.
3. The maximum allowable change observed over the entir e temperatur e range i.e., the diode voltage will not exceed the
specified mV change at any discrete temperature between the established limits.
4. Voltage measurements to be perform ed 15 secon ds after application of dc current.
5. 1N821, 1N823, 1N825, 1N827, and 1N829 also have qualification to MIL-PRF-19500/159 by adding the JAN, JANTX,
JANTXV or JANS prefix to part numbers as well as the “-1” suffix.
T4-LDS-0220, Rev. 1 (111514) ©2011 Microsemi Corporation Page 4 of 5
1N821-1 thru 1N829A-1
GRAPHS
600
500
400
300
200
100
0
25 50 100 150 175
TL, Lead temperature (oC) 3/8” from body
FIGURE 1
POW ER DE RATING CURVE
IZ – Operating Current (mA)
FIGURE 3
TYPICAL CHANGE OF TEMPERATURE COEFFICIENT
W ITH CHA NGE IN O PE RATI NG CURRENT
The cur ve shown in Figure 3 is typical of t he diode ser ies and greatly simplifies the
estimation of the Temperature Coefficient (TC) when t he diode is op erated at
cur rents ot her t han 7.5 mA.
EXAMP LE: A diode in this series is operated at a cur rent of 7. 5 mA and has
spec if ied Temperature Coefficient ( TC ) limits of + /-0.005 %/oC. To obtain the
t ypical Temperature Coefficient limits for this same diode operated at a curr ent of
6. 0mA, the new TC lim its (%/oC) can be estimated using the gr aph in FIGURE 3.
At a test current of 6.0mA the change in Temp erature Coefficient (TC) is
approximately –0.0006 %/oC. The algebraic sum of +/-0.005 %oC and –0.0006
%/oC gives t he new estimated limit s of +0. 0044 %/oC and -0.0056 %/oC.
Operating Current I
ZT
(mA)
FIGURE 2
TYPICAL ZENER IMPEDANCE
vs.
OPERATING CURRENT
Zener Impedance I
ZT
(Ohms)
Change in temperature coefficient (%/oC)
Change in temperature coefficient (mV/oC)
This curve in Figure 4 il lust rates the change of diode vo lt age arising
f rom t he effect of impedance. It is in effect an exploded view of t he
Zener operating r egion of the I-V characterist ic.
I n conjunction with Fi gure 3, this curve can be used to est imate tot al
voltage regulat ion under conditions of both varyin g temperatur e and
current.
I
Z
– Operating Current (mA)
FIGURE 4
TYPICAL CHANGE OF ZENER VOLTAGE
WITH CHANGE IN OPERA TING CURRENT
P
D
, Rated Power
Dissipation (mW)
∆V
Z
– Change in Zener
Voltage (mV)
T4-LDS-0220, Rev. 1 (111514) ©2011 Microsemi Corporation Page 5 of 5
1N821-1 thru 1N829A-1
PACKAGE DIM ENSIONS
Symbol
Dimensions
Notes
Inches
Millimeters
Min
Max
Min
Max
BD
.060
.107
1.52
2.72
3
BL
.120
.300
3.05
7.62
3
LD
.018
.023
0.46
0.58
LL
1.000
1.500
25.40
38.10
LL1
.050
1.27
4
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Package contour optional with in BD and length BL. Heat slugs, if any shall be included within th is cylinder but shall not
be subject to minimum limit of BD.
4. Within this zone, lead diameter may vary to allow for lead finishes and irregularities, other than heat slugs.
5. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
