IRF7811W
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Parameter Min Typ Max Units Conditions
Diode Forward VSD 1.25 V IS = 15A, VGS = 0V
Voltage*
Reverse Recovery Qrr 45 nC di/dt ~ 700A/µs
VDS = 16V, VGS = 0V, IS = 15A
Reverse Recovery Qrr(s) 41 nC di/dt = 700A/µs
Charge (with Parallel (with 10BQ040)
Schottky)VDS = 16V, VGS = 0V, IS = 15A
Source-Drain Rating & Characteristics
Charge
Notes: Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400 µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board
Typ = measured - Qoss
Typical values of RDS(on) measured at VGS = 4.5V, QG, QSW and QOSS
measured at VGS = 5.0V, IF = 15A.
Electrical Characteristics
Current
Parameter Min Typ Max Units Conditions
Drain-to-Source BVDSS 30 – – V VGS = 0V, ID = 250µA
Breakdown Voltage
Static Drain-Source RDS(on) 9.0 12 mΩVGS = 4.5V, ID = 15A
on Resistance
Gate Threshold Voltage VGS(th) 1.0 V VDS = VGS,ID = 250µA
Drain-Source Leakage IDSS 30 VDS = 24V, VGS = 0
150 µA VDS = 24V, VGS = 0,
Tj = 100°C
Gate-Source Leakage IGSS ±100 nA VGS = ±12V
Current
Total Gate Chg Cont FET QG22 33 VGS=5.0V, ID=15A, VDS=16V
Total Gate Chg Sync FET QG16.3 VGS = 5V, VDS< 100mV
Pre-Vth QGS1 3.5 VDS = 16V, ID = 15A, VGS = 5.0V
Gate-Source Charge
Post-Vth QGS2 1.2 nC
Gate-Source Charge
Gate to Drain Charge QGD 8.8
Switch Chg(Qgs2 + Qgd) Q
sw 10.1
Output Charge Qoss 12 VDS = 16V, VGS = 0
Gate Resistance RG2.0 4.0 Ω
Turn-on Delay Time td (on) 11 VDD = 16V, ID = 15A
Rise Time tr11 ns VGS = 5.0V
Turn-off Delay Time td (off) 29 Clamped Inductive Load
Fall Time tf9.9
Input Capacitance Ciss – 2335 –
Output Capacitance Coss – 400 – pF VDS = 16V, VGS = 0
Reverse Transfer Capacitance Crss – 119 –