NTE384 Silicon NPN Transistor High Voltage Power Amp/Switch Description: The NTE384 is a multiple epitaxial silicon NPN power transistor in a TO66 type package utilizing a multiple-emitter site structure. Multiple-epitaxial construction maximizes the volt-ampere characteristic of the device and provides fast switching speeds. Multiple-emitter design ensures uniform current flow throughout the structure, which produces a high IS/b and a large safe-operation-area. The NTE384 is characterized for use in inverters operating directly from a rectified 110V power line. The leakage current is specified at 450V; therefore the device can also be used in a series bridge configuration on a 220V line. The VEBO rating of 9V eases requirements on the drive transformer in inverter applications. Features: D Maximum Safe-Area-of-Operation D Low Saturation Voltages D High Voltage Rating: VCER(sus) = 375V D High Dissipation Rating: PT = 45W Absolute Maximum Ratings: Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 375V Collector-Emitter Sustaining Voltage With Base Open, VCEO(sus) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350V With Reverse Bias (VBE) of -1.5V, VCEX(sus) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 375V With External Base-Emitter Resistance (RBE) 50, VCER(sus) . . . . . . . . . . . . . . . . . . . 375V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Transistor Dissipation (TC +25C, VCE 40V), PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45W Operating Junction Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Lead Temperature (During Soldering, 1/32 in. (0.8mm) from case, 10sec max), TL . . . . . . . +230C Thermal Resistance, Junction to Case (VCE = 20V, IC = 2.25A), RJC . . . . . . . . . . . . . . . . . 3.9C/W Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Symbol Collector-Cutoff Current Min Typ Max Unit VCE = 450V, VBE = -1.5V - - 0.5 mA VCE = 450V, VBE = -1.5V, TC = +125C - - 5.0 mA VBE = -9V, IC = 0 - - 1.0 mA VCEO(sus) IC = 200mA, Note 1, Note 2 350 - - V VCER(sus) IC = 200mA, RBE = 50, Note 1, Note 2 375 - - V IC = 0 9 - - V VCE = 1V, IC = 1.2A, Note 1 12 28 50 IC = 1.2A, IB = 200mA, Note 1 - 1.0 1.6 V IC = 4A, IB = 800mA, Note 1 - 1.3 2.0 V IC = 1.2A, IB = 200mA, Note 1 - 0.15 0.5 V IC = 4A, IB = 800mA, Note 1 - 0.5 3.0 V pF ICEV Emitter-Cutoff Current IEBO Collector-Emitter Sustaining Voltage Emitter-Base Voltage VEBO DC Forward Current hFE Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage VBE(sat) VCE(sat) Test Conditions Output Capacitance Cobo VCB = 10V, f = 1MHz - - 150 Small-Signal Forward Current Transfer Ratio |hfe| VCE = 10V, IC = 200mA, f = 1MHz 1 7 - Second Breakdown Collector Current IS/b VCE = 50V, with Base forward biased, Pulse duration (non-repetitive) = 1sec 0.9 - - A Second Breakdown Energy ES/b VBE = -4V, IC = 3A, with Base reverse biased, RB = 50, L = 100H 0.45 - - mj - 0.02 - s - 0.3 0.75 s Delay Time td Rise Time tr Storage Time ts - 2.8 5.0 s Fall Time tf - 0.3 0.75 s VCC = 250V, IB1 = IB2 = 200mA, IC = 1.2A Note 1. Pulsed: Pulse Duration 350s, Duty Factor = 2%. .485 (12.3) Dia .295 (7.5) .062 (1.57) .031 (0.78) Dia .960 (24.3) .360 (9.14) Min Base .580 (14.7) .147 (3.75) Dia (2 Places) .200 (5.08) .145 (3.7) R Max Collector/Case Emitter