NTE384
Silicon NPN Transistor
High Voltage Power Amp/Switch
Description:
The NTE384 is a multiple epitaxial silicon NPN power transistor in a TO66 type package utilizing a
multiple–emitter site structure. Multiple–epitaxial construction maximizes the volt–ampere character-
istic of the device and provides fast switching speeds. Multiple–emitter design ensures uniform cur-
rent flow throughout the structure, which produces a high IS/b and a large safe–operation–area.
The NTE384 is characterized for use in inverters operating directly from a rectified 110V power line.
The leakage current is specified at 450V; therefore the device can also be used in a series bridge
configuration on a 220V line. The VEBO rating of 9V eases requirements on the drive transformer in
inverter applications.
Features:
DMaximum Safe–Area–of–Operation
DLow Saturation Voltages
DHigh Voltage Rating: VCER(sus) = 375V
DHigh Dissipation Rating: PT = 45W
Absolute Maximum Ratings:
Collector–Base Voltage, VCBO 375V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Sustaining Voltage
With Base Open, VCEO(sus) 350V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
With Reverse Bias (VBE) of –1.5V, VCEX(sus) 375V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
With External Base–Emitter Resistance (RBE) ≤ 50Ω, VCER(sus) 375V. . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, VEBO 9V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, IC
Continuous 7A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak 10A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Base Current, IB4A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Transistor Dissipation (TC ≤ +25°C, VCE ≤ 40V), PT45W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, Topr –65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg –65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (During Soldering, 1/32 in. (0.8mm) from case, 10sec max), TL+230°C. . . . . . .
Thermal Resistance, Junction to Case (VCE = 20V, IC = 2.25A), RΘJC 3.9°C/W. . . . . . . . . . . . . . . . .
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector–Cutoff Current ICEV VCE = 450V, VBE = –1.5V – – 0.5 mA
VCE = 450V, VBE = –1.5V, TC = +125°C– – 5.0 mA
Emitter–Cutoff Current IEBO VBE = –9V, IC = 0 – – 1.0 mA
Collector–Emitter Sustaining Voltage VCEO(sus) IC = 200mA, Note 1, Note 2 350 – – V
VCER(sus) IC = 200mA, RBE = 50Ω, Note 1, Note 2 375 – – V
Emitter–Base Voltage VEBO IC = 0 9– – V
DC Forward Current hFE VCE = 1V, IC = 1.2A, Note 1 12 28 50
Base–Emitter Saturation Voltage VBE(sat) IC = 1.2A, IB = 200mA, Note 1 –1.0 1.6 V
IC = 4A, IB = 800mA, Note 1 –1.3 2.0 V
Collector–Emitter Saturation Voltage VCE(sat) IC = 1.2A, IB = 200mA, Note 1 –0.15 0.5 V
IC = 4A, IB = 800mA, Note 1 –0.5 3.0 V
Output Capacitance Cobo VCB = 10V, f = 1MHz – – 150 pF
Small–Signal Forward Current
Transfer Ratio |hfe| VCE = 10V, IC = 200mA, f = 1MHz 1 7 –
Second Breakdown Collector
Current IS/b VCE = 50V, with Base forward biased,
Pulse duration (non–repetitive) = 1sec 0.9 – – A
Second Breakdown Energy ES/b VBE = –4V, IC = 3A, with Base reverse
biased, RB = 50Ω, L = 100µH0.45 – – mj
Delay Time tdVCC = 250V, –0.02 –µs
Rise Time trIB1 = IB2 = 200mA,
I = 1.2A –0.3 0.75 µs
Storage Time tsIC = 1.2A –2.8 5.0 µs
Fall Time tf–0.3 0.75 µs
Note 1. Pulsed: Pulse Duration ≤ 350µs, Duty Factor = 2%.
.485 (12.3)
Dia
.062 (1.57)
.295 (7.5)
.360 (9.14)
Min
.031 (0.78) Dia
.960 (24.3) Base
.580 (14.7)
.200
(5.08)
EmitterCollector/Case
.145 (3.7) R Max
.147 (3.75) Dia
(2 Places)
