T4-LDS-0037, Rev 2 (111456) ©2011 Microsemi Corporation Page 1 of 6
1N5518BUR-1 thru 1N5546BUR-1
Available on
commercial
versions
Low Voltage Ava lanche
500 mW Zener Diodes
Qualified per MIL-PRF-19500/437
Quali f i ed Lev els:
JAN, JAN TX a n d
JANTXV
DESCRIPTION
The 1N5518BUR-1 thru 1N5546BUR-1 series of 0 .5 wat t glass surface moun t Zener volt age
regu lators p r ovides a se l ecti on from 3 .3 t o 33 volts with tolerances ranging from plus/minus
1% to 10%. The standard toleranc e i s p l us/m i nus 5% with the B su ffix unless ordered
otherwise. These glass surface mou nt devices feature an intern al metallurgical bond. This
t ype of bonded Zen er packag e con str ucti on is also available in JAN, JANTX, and JANTXV
mili tary q uali fi cat i ons . Microsemi al so offers numerous oth er Zener products to meet h igher
and lower power app lications.
DO-213AA MELF
Package
Also available in:
DO-35 (DO-204AH)
(axial-leaded)
1N5518B-1 thr u 1N55 46B-1
Important: For the latest infor mation, visit our website http://www.microsemi.com.
FEATURES
• JEDEC registered 1N5518 thru 1N5546 series.
• Voltage tolerances of plus/minus 10%, 5%, 2%, and 1% available. See Note 1 on page 3.
• I nter nal meta llurgi cal bond.
• JAN, JANTX, and JANTXV qualification per MIL-PRF-19500/437 available.
• RoHS compl iant versions available (commercial grade only).
APPLICATIONS / BENE FITS
• Regulates voltage over a broad operating current and temperature range.
• Extensive selection from 3.3 to 33 V.
• Hermetically sealed surface mount package.
• Non-sensitive to ESD per MIL-STD-750 Method 1020.
• Minimal capacitance (see Figure 3).
• Inherently radiation hard as described in Microsemi’s “MicroNote 050” which is available at
microsemi.com.
MAXIMUM RATIN GS
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
1-800-446-1158
Tel: (978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road B usiness Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters/Test Conditions
Symbol
Value
Unit
Junction and Storage Temperature
TJ and TSTG
-65 to +175
oC
Steady-State Power
(1)
(Also see derating in Figure 2)
PD 0.5 W
Thermal Resistance Junction-to-End Cap (2)
RӨJEC
100
oC/W
Thermal Resistance Junction-to-Ambient (2)
RӨJA
300
oC/W
Thermal Impedance
ZӨJX
35
oC/W
Forward Voltage @ 200 mA
VF
1.1
V
Solder Pad Temperature @ 10 s
TSP
260
oC
Notes: 1. At end cap temperature TEC < 125 oC or at ambient TA < 50 ºC when mounted on FR4 PC board as
described for thermal resistance above (see Figure 2 for derating). Derate to 0 at +175 oC.
2. When mounted on FR4 PC board (1 oz Cu) with recommen ded footprint (see last page).
T4-LDS-0037, Rev 2 (111456) ©2011 Microsemi Corporation Page 2 of 6
1N5518BUR-1 thru 1N5546BUR-1
M ECHANICAL and PACKAG ING
• CASE: Hermeti cally sealed gl ass DO-213AA (SOD80 or MLL34) MELF style pac kage.
• TERMINALS: End caps tin-lead plated or RoHS comp liant matte-tin plating available (on commercial only) solderable per MIL-
STD-750, method 2026.
• POLARITY: Cathode i ndicated by band where diode is to be operated with the banded end positive with respect to the opposite
end for Zener regulation.
• MOUNTING SURFACE SELECTION: The Axial Coefficient of Expansion (COE) of this device is approximately +6 PPM/oC. The
COE of the Mounti ng Surface S ystem should be selected to provide a suitable match with this device.
• MARKING: Cathode band only.
• TAPE & REEL option: Standard per EIA-481-1-A with 12 mm tape (add “TR” suffix to part number). Consult factory for quantities.
• WEIGHT: 0.04 grams.
• See Package Dimensions on last page.
PART NOMENCLATURE
JAN 1N5518 B UR -1 (e3)
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
Blank = Commercial
JEDEC type number
See Electrical Characteristics
table
Zener Volta ge Tole ra nce
A = 10%
B = 5%
C = 2%
D = 1%
RoHS Compliance
e3 = RoHS compliant (available
on commercial grady only)
Blank = non-RoHS compliant
Metallurgically Bonded
Surface Mount Package
SYMBOL S & DEFI NITIONS
Symbol
Definition
IR
Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and temperature.
IZ, IZT, IZK
Regulator Current: The dc regulator current (IZ), at a specified test point (IZT), near breakdown knee (IZK).
IZL
Low Regulator (Zener) Current: The lowest rated dc current for the specified power rating.
IZM
Maximum Regulator (Zener) Current: The maximum rated dc current for the specified power rating.
VZ
Zener Vol tage: The Zener voltage the device will exhibit at a specified current (IZ) in its breakdown region.
∆VZ
Voltage Regulation: The change in Zener voltage between two spec ified currents or percentage of IZM.
ZZT or ZZK
Dynamic Impedance: The small signal impedance of the diode when biased to operate in its breakdown region at a
specified rms current modulation (typicall y 10% of IZT or IZK) and superimposed on IZT or IZK respectively.
T4-LDS-0037, Rev 2 (111456) ©2011 Microsemi Corporation Page 3 of 6
1N5518BUR-1 thru 1N5546BUR-1
ELECTRICAL CHARACTERI STICS
(TA = 25
o
C unless otherwise n oted. Based on dc measurements at thermal equilibrium; VF = 1.1 Max @ IF = 200 m A for all types.)
JEDEC TYPE
NUMBER
(N ote 1)
NOMINAL
ZENER
VOLTAGE
VZ @ I ZT
(N ote 2)
Volts
TEST
CURRENT
IZT
mA
(B-C-D Suffix
Only) MAX.
ZENER
IMPEDANCE
ZZT @ IZT
(N ote 3)
Ohms
MAX. REVERSE CURRENT
(N ote 4)
(B-C-D Suffix
Only)
MAXIMUM dc
ZENER
CURRENT
IZM
(N ote 5)
mA
(B-C-D Suffix
Only) MAX.
NOISE
DENSITY
AT IZ = 250 µA
ND
µ
V/
√
Hz
REGULATION
FACTOR
∆
VZ
(N ote 6)
Volts
LOW V
Z
CURRENT
IZL
(N ote 6)
mA
IR
µ
A
VR
– VOLTS
A
Suffix
only
B-C-D
Suffix
only
1N5518BUR-1
1N5519BUR-1
1N5520BUR-1
1N5521BUR-1
1N5522BUR-1
3.3
3.6
3.9
4.3
4.7
20
20
20
20
10
26
24
22
18
22
5.0
3.0
1.0
3.0
2.0
0.90
0.90
0.90
1.0
1.5
1.0
1.0
1.0
1.5
2.0
115
105
98
88
81
0.5
0.5
0.5
0.5
0.5
0.90
0.90
0.85
0.75
0.60
2.0
2.0
2.0
2.0
1.0
1N5523BUR-1
1N5524BUR-1
1N5525BUR-1
1N5526BUR-1
1N5527BUR-1
5.1
5.6
6.2
6.8
7.5
5.0
3.0
1.0
1.0
1.0
26
30
30
30
35
2.0
2.0
1.0
1.0
0.5
2.0
3.0
4.5
5.5
6.0
2.5
3.5
5.0
6.2
6.8
75
68
61
56
51
0.5
1.0
1.0
1.0
2.0
0.65
0.30
0.20
0.10
0.05
0.25
0.25
0.01
0.01
0.01
1N5528BUR-1
1N5529BUR-1
1N5530BUR-1
1N5531BUR-1
1N5532BUR-1
8.2
9.1
10.0
11.0
12.0
1.0
1.0
1.0
1.0
1.0
40
45
60
80
90
0.5
0.1
0.05
0.05
0.05
6.5
7.0
8.0
9.0
9.5
7.5
8.2
9.1
9.9
10.8
46
42
38
35
32
4.0
4.0
4.0
5.0
10
0.05
0.05
0.10
0.20
0.20
0.01
0.01
0.01
0.01
0.01
1N5533BUR-1
1N5534BUR-1
1N5535BUR-1
1N5536BUR-1
1N5537BUR-1
13.0
14.0
15.0
16.0
17.0
1.0
1.0
1.0
1.0
1.0
90
100
100
100
100
0.01
0.01
0.01
0.01
0.01
10.5
11.5
12.5
13.0
14.0
11.7
12.6
13.5
14.4
15.3
29
27
25
24
22
15
20
20
20
20
0.20
0.20
0.20
0.20
0.20
0.01
0.01
0.01
0.01
0.01
1N5538BUR-1
1N5539BUR-1
1N5540BUR-1
1N5541BUR-1
1N5542BUR-1
18.0
19.0
20.0
22.0
24.0
1.0
1.0
1.0
1.0
1.0
100
100
100
100
100
0.01
0.01
0.01
0.01
0.01
15.0
16.0
17.0
18.0
20.0
16.2
17.1
18.0
19.8
21.6
21
20
19
17
16
20
20
20
25
30
0.20
0.20
0.20
0.25
0.30
0.01
0.01
0.01
0.01
0.01
1N5543BUR-1
1N5544BUR-1
1N5545BUR-1
1N5546BUR-1
25.0
28.0
30.0
33.0
1.0
1.0
1.0
1.0
100
100
100
100
0.01
0.01
0.01
0.01
21.0
23.0
24.0
28.0
22.4
25.2
27.0
29.7
15
14
13
12
35
40
45
50
0.35
0.40
0.45
0.50
0.01
0.01
0.01
0.01
NOTES:
1. TOLERANCE AND VOLTAG E DESIGNATIO N –
The JEDEC type numbers with “A” prior to the UR-1 suffix are +/-10% with guaranteed limits for VZ, IR, and VF. Units with
guaranteed limits for all six parameters are indicated by a B suffix for +/-5.0% units, C suffix for +/-2.0% and D suffix for + /-1.0%
prior to the UR-1 suffix.
2. ZENER VOL TAGE (VZ) MEASUR EMENT –
Nominal Zener voltage is measured with the device junction in ther m al equilibrium with ambient temperature of 25 oC.
3. ZENER IMPEDANCE (ZZ) MEASUREMENT –
The Zener impedance is derived from the 60 Hz ac voltage, which results when an ac current having an rms value equal to 10% of
the dc Zener current (IZT ) is super im posed on IZT .
4. REVERSE CURRENT (IR) –
Reverse currents are guaranteed an d are measur ed at VR as shown on the table.
5. MAXIMUM REGULATOR CURRENT ( IZM) –
The maximum current shown is as shown in MIL-PRF-19500/437.
6. MAXIMUM REGULATION FACTOR (∆VZ) –
∆VZ is the maximum difference between VZ at IZT and VZ at IZL m eas ured wit h t he devic e junc tio n i n t he rma l eq uili brium.
T4-LDS-0037, Rev 2 (111456) ©2011 Microsemi Corporation Page 4 of 6
1N5518BUR-1 thru 1N5546BUR-1
GRAPHS
FIGURE 1 TEC, E nd Cap Temperature (oC)
Noise Density M easu r ement Circ uit
FIGURE 2 – Power Derating Curve
Zener Vol tage VZ
FIGURE 4
FIGURE 3 – Capaci tance vs. Zener V oltage (typical) Z ener D i ode Characteristi cs and Symbol Identificati on
Noise density, (N
D
) is specified in microvolt-rms per
square
-root-her tz. Actual measurement is performed
using a 1 kHz to 3 kHz frequency bandpass filter
at a
constant Zener test current (I
ZT) at 25 oC ambient
temperature.
P
d
, Rated Maximum dc Operation (mW)
Typical Capacitance in Picofarads (pf)
At zero volts
At –2 volt s (VR)
T4-LDS-0037, Rev 2 (111456) ©2011 Microsemi Corporation Page 5 of 6
1N5518BUR-1 thru 1N5546BUR-1
GRAPHS (continued)
Operating Current IZT (mA)
FIGURE 5
Zener Impedance vs. O peration Current (typical)
Ze ner Impedan ce Z
ZT
(Ohms)
6.8 Volt
11 Vo l t
28 Vo l t
T4-LDS-0037, Rev 2 (111456) ©2011 Microsemi Corporation Page 6 of 6
1N5518BUR-1 thru 1N5546BUR-1
PACKAGE DIM ENSIONS
Ltr
Dimensions
Inch
Millimeter
Min
Max
Min
Max
BD
.063
.067
1.60
1.70
BL
.130
.146
3.30
3.71
ECT
.016
.022
0.41
0.56
S
.001 min
0.03 min
NOTES:
1. Dimensions are in inch.
2. Millimeters are given for general information only.
3. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
PAD LAYOUT
INCHES
mm
A
.200
5.08
B
.055
1.40
C
.080
2.03
