GS9014
Vishay Semiconductors
for merly General Semiconductor
Document Number 88197 www.vishay.com
16-May-02 1
New Product
Small Signal Transistors (NPN)
Features
• NPN Silicon Epitaxial Planar Transistors
•Complementar y to GS9015
• Low noise pre-amplifier
•High hFE
Mechanical Data
Case: TO-92 Plastic Package
Weight: approx. 0.18g
Packaging Codes/Options:
E6/Bulk-5K per container, 20K per box
E7/4K per Ammo mag., 20K per box
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified
Parameter Symbol Value Unit
Collector-Base Voltage VCBO 50 V
Collector-Emitter Voltage VCEO 45 V
Emitter-Base Voltage VEBO 5V
Collector Current IC100 mA
Power Dissipation at Tamb = 25°CP
tot 450(1) mW
Thermal Resistance Junction to Ambient Air RθJA 250(1) °C/W
Junction Temperature Tj150 °C
Storage Temperature Range TS–55 to +150 °C
Note:
(1) Valid provided that leads are kept at ambient temperature at a distance of 2mm from case
0.181 (4.6)
min. 0.492 (12.5) 0.181 (4.6)
0.142 (3.6)
0.098 (2.5)
max. ∅
0.022 (0.55)
Bottom
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Dimensions in inches and (millimeters)
TO-226AA (TO-92)
GS9014
Vishay Semiconductors
for merly General Semiconductor
www.vishay.com Document Number 88197
216-May-02
Electrical Characteristics(TJ= 25°C unless otherwise noted)
Parameter Symbol Test Condition Min Typ Max Unit
Current Gain Group A 60 —150
DC Current Gain BhFE VCE = 5V, IC= 1mA 100 —300 —
C 200 —600
D 400 —1000
Collector-Emitter Breakdown Voltage V(BR)CEO IC= 1mA, IB= 0 45 ——V
Collector-Base Breakdown Voltage V(BR)CBO IC= 100µA, IE= 0 50 ——V
Emitter-Base Breakdown Voltage V(BR)EBO IE= 100µA, IC= 0 5 ——V
Collector Cut-off Current ICBO VCB = 50V, IE= 0 ——50 nA
Emitter Cut-off Current IEBO VEB = 5V, IC= 0 ——50 nA
Collector-Emitter Saturation Voltage VCE(sat) IC= 100mA, IB= 5mA —0.14 0.3 V
Base-Emitter Saturation Voltage VBE(sat) IC= 100mA, IB= 5mA —0.84 1.0 V
Base-Emitter ON Voltage VBE(on) VCE = 5V, IC = 2mA 0.58 0.63 0.70 V
Output Capacitance COB VCB = 10V, IE= 0, —2.2 3.5 pF
ƒ = 1 MHz
Gain-Bandwidth Product ƒTVCE = 5V, IC= 10mA 150 270 —MHz
Noise Figure NF VCE = 5V, IC= 0.2mA, —0.9 10 dB
ƒ = 1KHz, Rs = 2KΩ
