2004 Microchip Technology Inc. DS21420D-page 1
TC4421/TC4422
Features
• High Peak Output Current: 9A
• Wide Input Supply Voltage Operating Range:
- 4.5V to 18V
• High Continuous Output Current: 2A Max
• Fast Rise and Fall Times:
- 30 ns with 4,700 pF Load
- 180 ns with 47,000 pF Load
• Short Pr opagation Del ays: 30 ns (typ)
• Low Supply Current:
- With Logic ‘1’ Input – 200 µA (typ)
- With Logic ‘0’ Input – 55 µA (typ)
• Low Output Impedance: 1.4Ω (typ)
• Latch-Up Protected: Will Withstand 1.5A Output
Reverse Current
• Input Will Withstand Negative Inputs Up To 5V
• Pin-Com p a tib le wi th the TC4420/T C 442 9
6A MOSFET Driver
• Space-saving 8-Pin 6x5 DFN Pac kage
Applications
• Line Drivers for Extra Heavily-Loaded Lines
• Pul se Gener ators
• Driving the Largest MOSFETs and IGBTs
• Local Power ON/OFF Switch
• Motor and Solenoid Driver
General Description
The TC4421/TC4422 are high-current buffer/drivers
capable of driving large MOSFETs and IGBTs.
These devices are essentially immune to any form of
upset, except direct overvoltage or over-dissipation.
They cannot be latched under any conditions within
their power and voltage ratings. These parts are not
subject to damage or improper operation when up to
5V of ground bounce is present on their ground termi-
nals. They can accept, without damage or logic upset,
more t han 1A in duct ive curr ent of either polari ty bei ng
forced back into their outputs. In addition, all terminals
are fully protected against up to 4 kV of electrostatic
discharge.
The TC4421/TC4422 inputs may be driven directly
from either TTL or CMOS (3V to 18V). In addition,
300 mV of hysteresis is built into the input, providing
noise immunity and allowing the device to be driven
from slowly rising or falling waveforms.
With both surface-mount and pin-through-hole
packages and four operating temperature range offer-
ings, the TC4421/22 family of 9A MOSFET drivers fit
into most any application where high gate/line
capac itance drive is required.
Package Types(1)
8-Pin PDIP/
1
2
3
4
VDD
5
6
7
8OUTPUT
GND
VDD
INPUT
NC
GND OUTPUT
TC4421
TC4422
5-Pin TO-22 0
VDD
GND
INPUT
GND
OUTPUT
TC4421
TC4422
Tab is
Common
to VDD
Note 1: Duplicate pins must both be connected for proper operation.
2: Exposed pad of the DFN package is electrically isolated.
TC4421 TC4422
VDD
OUTPUT
GND
OUTPUT
SOIC 8-Pi n DFN(2)
VDD
INPUT
NC
GND
2
3
45
6
7
8
1TC4421
TC4422
VDD
OUTPUT
GND
OUTPUT
TC4421 TC4422
VDD
OUTPUT
GND
OUTPUT
9A High-Speed MOSFET Drivers
TC4421/TC4422
DS21420D-page 2 2004 Microchip Technology Inc.
Functional Block Diagram
Effective
Input
Output
Input
GND
VDD
300 mV
4.7V
TC4421
C = 25 pF
TC4422
Inverting
Non-Inverting
200 µA
2004 Microchip Technology Inc. DS21420D-page 3
TC4421/TC4422
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings†
Supply Voltage.....................................................+20V
Input Voltage....................(VDD + 0.3V) to (GND – 5V)
Input Current (VIN > VDD)...................................50 mA
Package Power Dissipation (TA ≤ 70°C)
5-Pin TO-220....................................................1.6W
DFN.............................................................. Note 2
PDIP............................................................730 mW
SOIC............................................................750 mW
Package Power Dissipation (TA ≤ 25°C)
5-Pin TO-220 (With Heatsink) ........................12.5W
Thermal Impedances (To Case)
5-Pin TO-220 RθJ-C ......................................10°C/W
† Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device. These
are stress ratings only and funct ional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
DC CHARACTERISTICS
Electrical Specifications: Unle ss otherwise noted, TA = +25°C with 4.5V ≤ VDD ≤ 18V.
Parameters Sym Min Typ Max Units Conditions
Input
Logic ‘1’, High Input Voltage VIH 2.4 1.8 — V
Logic ‘0’, Low Input Voltage VIL —1.30.8V
Input Current IIN –10 — +10 µA 0V ≤ VIN ≤ VDD
Output
High Output Voltage VOH VDD – 0.025 — — V DC TEST
Low Ou tput Voltage VOL — — 0.025 V DC TEST
Output Re si stanc e, High ROH —1.4—ΩIOUT = 10 mA, VDD = 18V
Output Re si stanc e, Low ROL —0.91.7ΩIOUT = 10 mA, VDD = 18V
Peak Output Current IPK —9.0—AV
DD = 18V
Contin uou s Ou tpu t Current IDC 2——A10V ≤ VDD ≤ 18V, TA = +25°C
(TC4421/TC4422 CAT only) (Note 3)
Latch-Up Prote ction
Withstand Reverse Current IREV — >1.5 — A Duty cycle ≤ 2%, t ≤ 300 µsec
Switching T ime (Note 1)
Rise Time tR—6075nsFigure 4-1, CL = 10,000 pF
Fall Time tF—6075nsFigure 4-1, CL = 10,000 pF
Delay Time tD1 —3060nsFigure 4-1
Delay Time tD2 —3360nsFigure 4-1
Power Supply
Power Supply Current IS—
—0.2
55 1.5
150 mA
µA VIN = 3V
VIN = 0V
Operati ng Inpu t Volta ge VDD 4.5 — 18 V
Note 1: Switching times ensured by design.
2: Package power dissipation is dependent on the copper pad area on the PCB.
3: Tested during characterization, not production tested.
TC4421/TC4422
DS21420D-page 4 2004 Microchip Technology Inc.
DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE)
TE MPERATURE CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, over operating temperature range with 4.5V ≤ VDD ≤ 18V.
Parameters Sym Min Typ Max Units Conditions
Input
Logic ‘1’, High Input Voltage VIH 2.4 — — V
Logic ‘0’, Low Input Voltage VIL ——0.8V
Input Current IIN –10 — +10 µA 0V ≤ VIN ≤ VDD
Output
High Output Voltage VOH VDD – 0.0 25 — — V DC TEST
Low Ou tput Voltage VOL — — 0.025 V DC TEST
Output Re si stanc e, High ROH —2.43.6ΩIOUT = 10 mA, VDD = 18V
Output Re si stanc e, Low ROL —1.82.7ΩIOUT = 10 mA, VDD = 18V
Switching T ime (Note 1)
Rise Time tR— 60 120 ns Figure 4-1, CL = 10,000 pF
Fall Time tF— 60 120 ns Figure 4-1, CL = 10,000 pF
Delay Time tD1 —5080nsFigure 4-1
Delay Time tD2 —6580nsFigure 4-1
Power Supply
Power Supply Current IS—
——
—3
0.2 mA VIN = 3V
VIN = 0V
Operati ng Inpu t Volta ge VDD 4.5 — 18 V
Note 1: Switching times ensured by design.
Electrical Specifications: Unless otherwise noted, all parameters apply with 4.5V ≤ VDD ≤ 18V.
Parameters Sym Min Typ Max Units Conditions
Temperature Ranges
Specified Temperature Range (C) TA0—+70°C
Specified Temperature Range (E) TA–40 — +85 °C
Specified Temperature Range (V) TA–40 — +125 °C
Maximum Junction Temperature TJ— — +150 °C
Storage Temperature Range TA–65 — +150 °C
Package Thermal Resistances
Thermal Resistance, 5L-TO-220 θJA —71—°C/W
Thermal Resistance, 8L-6x5 DFN θJA — 33.2 — °C/W Typical 4-layer board with
vias to ground plane
Thermal Resistance, 8L-PDIP θJA —125—°C/W
Thermal Resistance, 8L-SOIC θJA —120—°C/W
2004 Microchip Technology Inc. DS21420D-page 5
TC4421/TC4422
2.0 TYPICAL PERFORMANCE CURVES
Note: Unless otherwise indicated, TA = +25°C with 4.5V ≤ VDD ≤ 18V.
FIGURE 2-1: Rise Time vs. Supply
Voltage.
FIGURE 2-2: Rise Time vs. Capacitive
Load.
FIGURE 2-3: Ris e and F all Times vs.
Temperature.
FIGURE 2-4: Fall Time vs. Supply
Voltage.
FIGURE 2-5: Fall Time vs. Capacitive
Load.
FIGURE 2-6: Propagation Delay vs.
Supply Voltage.
Note: The g r ap hs and t ables prov id ed follow i ng thi s n ote are a sta tis tic al s umm ar y b as ed on a limite d n um ber of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
220
200
180
160
140
120
100
80
60
40
20
04681012
14 16 18
1000 pF
4700 pF
10,000 pF
22,000 pF
t
RISE
(nsec)
VDD (V)
tRISE (nsec)
5V
15V
300
250
200
150
100
50
0
100 1000 10,000 100,000
10V
C
LOAD
(pF)
90
60
40
30
70
50
80
-40 0 40 80 120
Time (nsec)
TA (°C)
CLOAD = 10,000 pF
VDD = 15V
tFALL
tRISE
180
160
140
120
100
80
60
40
20
0
4 6 8 1012141618
1000 pF
4700 pF
10,000 pF
22,000 pF
t
FALL
(nsec)
V
DD
(V)
tFALL (nsec)
300
250
200
150
100
50
0
100 1000 10,000
5V
10V
15V
100,000
C
LOAD
(pF)
50
810121416 184
Time (nsec)
45
40
35
30
25 6
VDD (V)
CLOAD = 1000 pF
tD1
tD2
TC4421/TC4422
DS21420D-page 6 2004 Microchip Technology Inc.
Note: Unless otherwise indicated, TA = +25°C with 4.5V ≤ VDD ≤ 18V.
FIGURE 2-7: Supply Curren t vs.
Capacitive Load (VDD = 18V).
FIGURE 2-8: Supply Curren t vs.
Capacitive Load (VDD = 12V).
FIGURE 2-9: Supply Curren t vs.
Capactive Load (VDD = 6V).
FIGURE 2-10: Supply Current vs.
Frequency (VDD = 18V).
FIGURE 2-11: Supply Current vs.
Frequency (VDD = 12V).
FIGURE 2-12: Supply Current vs.
Frequency (VDD = 6V).
220
100
200
180
160
140
120
100
80
60
40
20
0
100,00010,0001000
1.125 MHz
632 kHz
200 kHz 20 kHz
2 MHz
63.2 kH
z
ISUPPLY
(mA)
CLOAD (pF)
VDD = 18V
I
SUPPLY
(mA)
180
160
140
120
100
60
0
80
40
20
1.125 MHz
63.2 kHz
20 kHz
632 kHz
200 kHz
2 MHz
100 100,00010,0001000
V
DD
= 12V
C
LOAD
(pF)
ISUPPLY
(mA)
100
90
80
70
60
50
40
30
20
10
0
20 kHz
632 kHz
200 kHz
2 MHz
63.2 kHz
100 100,00010,0001000
V
DD
= 6V
C
LOAD
(pF)
Fre
q
uenc
y
(
kHz
)
180
100
80
60
40
20
0
120
140
160 22,000 pF
470 pF
10,000 pF
0.1 µF
4700 pF
10 100 1000
47,000 pF
I
SUPPLY
(mA)
V
DD
= 18V
I
SUPPLY
(mA)
Frequency (kHz)
180
100
80
60
40
20
0
120
140
160
470 pF
22,000 pF
4700 pF
10,000 pF
47,000 pF
10 100 1000
V
DD
= 12V
0.1 µF
I
SUPPLY
(mA)
47,000 pF
120
40
20
0
100
4700 pF
10
Fre
q
uenc
y
(
kHz
)
100 1000
60
80
22,000 pF
470 pF
10,000 pF
10 100 1000
V
DD
= 6V
0.1 µF
2004 Microchip Technology Inc. DS21420D-page 7
TC4421/TC4422
Note: Unless otherwise indicated, TA = +25°C with 4.5V ≤ VDD ≤ 18V.
FIGURE 2-13: Propagation Delay vs. Input
Amplitude.
FIGURE 2-14: Crossover Energy vs.
Supply Voltage.
FIGURE 2-15: High-State Output
Resistance vs. Supply V oltage.
FIGURE 2-16: Propagation Delay vs.
Temperature.
FIGURE 2-17: Quiescent Supply Current
vs. Temperature.
FIGURE 2-18: Low-State Output
Resistance vs. Supply Voltage.
120
Time (nsec)
110
100
90
80
70
60
50
40
30
20
10
012345678910
Input Amplitude (V)
V
DD
= 10V
C
LOAD
= 10,000 pF
t
D1
t
D2
10-7
10-6
A•sec
NOTE: The values on this graph represent the loss seen
by the driver during a complete cycle. For the loss
in a single transition, divide the stated value by 2.
4681012141618
VDD (V)
10-8
6
46 81012141618
5.5
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
VDD
(V)
T
J
= 150°C
T
J
= 25°C
RDS(ON)
(Ω)
50
–40 –20 0 20 40 60 80 100 120–60
Time (nsec)
45
40
35
30
25
20
T
A
(
°
C)
t
D1
t
D2
V
DD
= 18V
C
LOAD
= 10,000 pF
V
IN
= 5V
102
-40 -20 0 20 40 60 80 100 120-60
V
DD
= 18V
Input = 1
Input = 0
I
QUIESCENT
(µA)
T
J
(°C)
103
RDS(ON) (Ω)
46 81012141618
6
5.5
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
VDD (V)
TJ = 150°C
TJ = 25°C
TC4421/TC4422
DS21420D-page 8 2004 Microchip Technology Inc.
3.0 PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1: PIN FUNCTION TABLE
3.1 Supply Input (VDD)
The VDD in put is the bia s supply for the M OSFET driver
and is rated for 4.5V to 18V with respect to the ground
pin. The VDD input should be bypassed to ground with
a local ceramic capacitor. The value of the capacitor
shoul d be chos en base d on the capaciti ve load that is
being driv en . A min im um val ue of 1.0 µF is sug ge ste d.
3.2 Control Input
The MOSFET driver input is a high-impedance,
TTL/CMOS compatible input. The input also has
300 mV of hysteresis between the high and low
thresholds that prevents output glitching even when the
rise and fall time of the input signal is very slow.
3.3 CMOS Push-Pull Output
The MOSFET driver output is a low-impedance,
CMOS, push-pull style output capable of driving a
capacitive load with 9.0A peak currents. The MOSFET
driver output is capable of withstanding 1.5A peak
reverse currents of either polarity.
3.4 Ground
The ground pin s are the return path for the bias current
and for the high peak currents that discharge the load
capa citor. The gro und pins should be tied into a ground
plane or have very short traces to the bias supply
source retu rn.
3.5 Exposed Metal Pad
The expo sed metal pad of th e 6x5 DF N packa ge i s n ot
internally connected to any potential. Therefore, this
pad can be connected to a ground plane or other
copper plane on a printed circuit board to aid in heat
removal from the package.
Pin No.
8-Pin PDIP,
SOIC
Pin No .
8-Pin DFN Pin No.
5-Pin TO-220 Symbol Description
11—V
DD Supply input, 4.5V to 18V
2 2 1 INPUT Control input, TTL/CMOS compatible input
3 3 — NC No connec tio n
4 4 2 GND Ground
5 5 4 GND Ground
6 6 5 OUTPUT CMOS push-pull output
7 7 — OUTPUT CMOS push-pull output
883V
DD Supply input, 4.5V to 18V
—PAD— NCExposed metal pad
——TABV
DD Metal tab is at the VDD potential
2004 Microchip Technology Inc. DS21420D-page 9
TC4421/TC4422
4.0 APPLICATIONS INFORMATION
FIGURE 4-1: Switching Time Test Circ uits.
Inverting Driver
Non-Inverting Driver
Input
tD1 tF
tR
tD2
Input: 100 kHz,
square wave,
tRISE = tFALL ≤ 10 nsec
Output
Input
Output
tD1 tF
tR
tD2
+5V
10%
90%
10%
90%
10%
90%
+18V
0V
90%
10%
10% 10%
90%
+5V
+18V
0V
0V
0V
90%
26
7
54
18
CL = 10,000 pF
0.1 µF
4.7 µF
Input
VDD = 18V
Output
0.1 µF
TC4421
TC4422
Note: Pinout shown is for the DFN, PDIP and SOIC packages.
TC4421/TC4422
DS21420D-page 10 2004 Microchip Technology Inc.
5.0 P ACKAGING INFORMATION
5.1 Package Marking Information
XXXXXXXX
XXXXXNNN
YYWW
8-Lead PDIP (300 mil) Example:
TC4421
CPA256
0420
Legend: XX...X Customer specific information*
YY Year code (last 2 digits of calendar year)
WW Week code (week of January 1 is week ‘01’)
NNN Alphanumeric traceability code
Note: In the event the full Micro chip p ar t numbe r cannot be marke d on one li ne, it will
be carried ov er to the ne xt li ne thus lim iti ng th e nu mb er of av ai lab le c hara ct ers
for customer specific information.
*Standard OTP marking consists of Microchip part number, year code, week code, and traceability code.
5-Lead TO-220
XXXXXXXXX
XXXXXXXXX
YYWWNNN
Example:
TC4421CAT
XXXXXXXXX
0420256
8-Lead DFN Example:
XXXXXXX
XXXXXXX
XXYYWW
NNN
TC4421
EMF
0420
256
8-Lead SOIC (208 mil) Example:
XXXXXXXX
XXXXXXXX
YYWWNNN
GTC4421
ESM
0420256
2004 Microchip Technology Inc. DS21420D-page 11
TC4421/TC4422
5-Lead Plastic Transistor Outline (AT) (TO-220)
L H1
Q
E
b
e1
e
C1
J1
F
A
D
a(5X)
ØP
EJECTOR PIN
e3
Drawing No. C04-036
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or
protrusions shall not exceed .010" (0.254mm) per side.
JEDEC equivalent: TO-220
*Controlling Parameter
Mold Draft Angle
Lead Width
Lead Thickness
a
C1
b
.014
Dimension Limits
Overall Height
Lead Length
Overall Width
Lead Pitch
A
L
E
.540
MIN
e
Units
.060
INCHES*
.022 0.36 0.56
MILLIMETERS
.190
.560 13.72
MINMAX
4.83
14.22
MAX
.160 4.06
3° 7° 3° 7°
Overall Length D
1.020.64.040.025
Overall Lead Centers e1 .263
.385
.560
.273 6.68 6.93
.072 1.52 1.83
.415 9.78 10.54
.590 14.22 14.99
Through Hole Diameter P .146 .156 3.71 3.96
J1Base to Bottom of Lead .090 2.29.115 2.92
Through Hole Center Q.103 2.87.113 2.62
Flag Thickness F .045 1.40.055 1.14
Flag Length H1 .234 6.55.258 5.94
Space Between Leads e3 .030 1.02.040 0.76
TC4421/TC4422
DS21420D-page 12 2004 Microchip Technology Inc.
8-Lead Plastic Dual Flat No Lead Package (MF) 6x5 mm Body (DFN-S) – Saw Singulated
2004 Microchip Technology Inc. DS21420D-page 13
TC4421/TC4422
8-Lead Plastic Dual In-line (P) – 300 mil (PDIP)
B1
B
A1
A
L
A2
p
α
E
eB
β
c
E1
n
D
1
2
Units INCHES* MILLIMETERS
Dimen sion Li mits M IN NOM MAX MIN NOM MAX
Number of Pins n88
Pitch p.100 2.54
Top to Seating Plane A .140 .155 .170 3.56 3.94 4.32
Molded Package Thickness A2 .115 .130 .145 2.92 3.30 3.68
Base to Seating Plane A1 .015 0.38
Shoulder to Shoulder Width E .300 .313 .325 7.62 7.94 8.26
Molded Package Width E1 .240 .250 .260 6.10 6.35 6.60
Overall Len gth D .360 .37 3 .38 5 9.1 4 9.46 9.78
Tip to Seating Plane L .125 .130 .135 3.18 3.30 3.43
Lead Thickness c.008 .012 .015 0.20 0.29 0.38
Upper Lead Width B1 .045 .058 .070 1.14 1.46 1.78
Lower Lead Width B .014 .018 .022 0.36 0.46 0.56
Overall Row Spacing § eB .310 .370 .430 7.87 9.40 10.92
Mold Draft Angle Top α5 10 15 5 10 15
Mold Draft Angle Bottom β5 10 15 5 10 15
* Controlling Parameter
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed
JEDEC Equivalent: MS-001
Drawing No. C04-018
.010” (0.254mm) per side.
§ Significant Characteristic
TC4421/TC4422
DS21420D-page 14 2004 Microchip Technology Inc.
8-Lead Plastic Small Outline (SM) – Medium, 208 mil Body (SOIJ)
(JEITA/EIAJ Standard, Formerly called SOIC)
Foot Angle φ048 048
1512015120
β
Mold Draft Angle Bottom
1512015120
α
Mold Draft Angle Top
0.510.430.36.020.017.014BLead Width
0.250.230.20.010.009.008
c
Lead Thickness
0.760.640.51.030.025.020LFoot Length
5.335.215.13.210.205.202DOverall Length
5.385.285.11.212.208.201E1Molded Package Width
8.267.957.62.325.313.300EOverall Width
0.250.130.05.010.005.002A1Standoff
1.98.078A2Molded Package Thickness
2.03.080AOverall Height
1.27.050
p
Pitch
88
n
Number of Pins
MAXNOMMINMAXNOMMINDimension Limits
MILLIMETERSINCHES*Units
α
A2
A
A1
L
c
β
φ
2
1
D
n
p
B
E
E1
.070 .075
.069 .074
1.78
1.75
1.97
1.88
exceed .010" (0.254mm) per side.
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not
Notes:
Drawing No. C04-056
*Controlling Parameter
2004 Microchip Technology Inc. DS21420D-page 15
TC4421/TC4422
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
Sales and Support
Device: TC4421: 9A High-Speed MOSFET Driver, Inverting
TC4422: 9A High-Speed MOSFET Driver, Non-Inverting
Temperature Range: C = 0°C to +70°C (PDIP and TO-220 Only)
E = -40°C to +85°C
V = -40°C to +125°C
Packag e: AT = TO-22 0, 5-lead (C-Temp Onl y)
MF = Dual, Flat, No-Lead (6x5 mm Body), 8-lead
MF713 = Dual, Flat, No-Lead (6x5 mm Body), 8-lead
(Tape and Ree l)
PA = Plastic DIP (300 mil Body), 8-lead
SM = Plastic SOIC (208 mil Body), 8-lead
SM713 = Plastic SOIC (208 mil Body), 8-lead
(Tape and Ree l)
PB Free G = Lead-Free device
= Blank
* Available on selected packages. Contact your local sales
representative for availability
PART NO. XXX
PackageTemperature
Range
Device
Examples:
a) TC4421CAT: 9A High-Speed Inverting
MOSFET Dr i ver,
TO-220 package,
0°C to +70°C.
b) TC4421ESMG: 9A High-Speed Inverting
MOSFET Dr i ver,
PB Free SOIC package,
-40°C to +85°C.
c) TC4421VMF: 9A High-Speed Inverting
MOSFET Dr i ver,
DFN package,
-40°C to +125°C.
a) TC4422VPA: 9A High-Speed
Non-Invert ing MOSFET
Driver, PDIP package,
-40°C to +125°C.
b) TC4422EPA: 9A High-Speed
Non-Inverting
MOSFET Dr i ver,
PDIP package,
-40°C to +85°C.
c) TC4422EMF: 9A High-Speed
Inverting MOSFET Driver,
DFN package,
-40°C to +85°C.
XXX
Tape & Reel
X
PB Free
Data Sheets
Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and
recommended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following:
1. Your local Microchip sales office
2. The Microchip Corporate Literature Center U.S. FAX: (480) 792-7277
3. The Microchip Worldwide Site (www.microchip.com)
Please specify which device, revision of silicon and Dat a Sheet (include Literature #) you are using.
Customer Notification System
Register on our web site (www.m icrochip.com /cn) to receive the most current information on our products.
TC4421/TC4422
DS21420D-page 16 2004 Microchip Technology Inc.
NOTES:
2004 Microchip Technology Inc. DS21420D-page 17
Information contained in this publication regarding device
applications and the like is intended through sug gestion only
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
No representation or warranty is given and no liability is
assumed by Microc hip Technology Incorporated with respect
to the accuracy or use of such inf orm ation, or inf ringement of
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Trademarks
The Microchip name and logo, the Microchip logo, Accuron,
dsPIC, KEELOQ, microID, MPLAB, PIC, PICmicro,
PICSTART, PR O MATE, PowerSm a rt , rfP IC , and
SmartShunt are registered trademarks of Microchip
Technology Incorporated in the U.S.A. and other countries.
AmpLab, FilterLab, M XDE V, MXLAB, PICMASTER, SEEVAL,
SmartSensor and The Embedded Control Solutions Company
are registered trademarks of Microchip Technology
Incorporated in the U.S.A.
Analog-for-the-Digital Age, Application Maestro, dsPICDEM,
dsPICDEM.net, dsPICworks, ECAN, ECONOMONITOR,
FanSense, FlexROM, fuzzyLAB, In-Circuit Serial
Programming, ICSP, ICEPIC, Migratable Memory, MPASM,
MPLIB, MPLINK, MPSIM, PICkit, PICDEM, PICDEM.net,
PICLAB, PICtail, PowerCal, PowerInfo, PowerMate,
PowerTool, rfLAB, rfPICDEM, Select Mode, Smart Serial,
SmartTel and Total Endurance are trademarks of Microchip
Technology Incorporated in the U.S.A. and other countries.
SQTP is a service mark of Microchip Technology Incorporated
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All other trademarks mentioned herein are property of their
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© 2004, Microchip Technology Incorporated, Printed in the
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Printed on recycled paper.
Note the following details of the code protection feature on Microchip devices:
• Microchip products meet the specification contained in their particular Microchip Data Sheet.
• Microchip believes that its family of products is one of the most secure families of its kind on t he market today, when used in the
intended manner and under normal conditions.
• The re are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Dat a
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
• Microchip is willing to work with the customer who is concerned about the integrity of their code.
• Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is c onstantly evolving. We a t Microchip are committed to continuously improving the c ode prot ection f eatures of our
products. Attempts to break Microchip’ s code protection f eature may be a violati on of t he Digit al Millennium Copyright Act. If such act s
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Microchip received ISO/TS-16949:2002 quality system certification for
its worldwide headquarters, design and wafer fabrication facilities in
Chandler and Tempe, Arizona and Mountain View, California in
October 2003. The Company’s quality system processes and
procedures are for its PICmicro® 8-bit MCUs, KEELOQ® code hopping
devices, Serial EEPROMs, micro peripherals, nonvolat ile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
DS21420D-page 18 2004 Microchip Technology Inc.
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08/24/04
