SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N4237 * VCBO=50V(Min), VCEO=40V(Min) * Hermetic TO-39 Metal package. * Ideally suited for General Purpose and Amplifier Applications * Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO VCEO VEBO IC IB PD PD TJ Tstg Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Continuous Collector Current Base Current TA = 25C Total Power Dissipation at Derate Above 25C TC = 25C Total Power Dissipation at Derate Above 25C Junction Temperature Range Storage Temperature Range 50V 40V 6V 1.0A 0.5A 1.0W 5.7mW/C 6W 34mW/C -65 to +200C -65 to +200C THERMAL PROPERTIES Symbols Parameters RJA RJC Min. Typ. Max. Units Thermal Resistance, Junction To Ambient 175 C/W Thermal Resistance, Junction To Case 29 C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 8367 Issue 1 Page 1 of 3 SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N4237 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise stated) Symbols (1) V(BR)CEO ICEX Parameters Test Conditions Collector-Emitter Breakdown Voltage IC = 10mA IB = 0 VCE = 50V VBE = -1.5V VCE = 30V VBE = -1.5V Collector Cut-Off Current Min. Typ Max. 40 TA = 150C Units V 100 nA 25 A ICBO Collector Cut-Off Current VCB = 50V IE = 0 100 nA IEBO Emitter Cut-Off Current VEB = 6V IC = 0 0.5 mA IC = 100mA VCE = 1.0V 30 IC = 250mA VCE = 1.0V 30 TA = -55C 15 IC = 500mA VCE = 1.0V 30 IC = 500mA IB = 50mA 0.3 IC = 1.0A IB = 0.1A 0.6 IC = 500mA IB = 50mA 1.0 IC = 1.0A IB = 0.1A 1.5 IC = 100mA VCE = 10V hFE Forward-current transfer ratio (1) (1) VCE(sat) VBE(sat) (1) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage 150 V DYNAMIC CHARACTERISTICS | hfe | Small signal forward-current transfer ratio Cobo Output Capacitance 3.0 f = 10MHz VCB = 10V IE = 0 100 f = 1.0MHz pF Notes (1) Pulse Width 300us, 2% Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 8367 Issue 1 Page 2 of 3 SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N4237 MECHANICAL DATA Dimensions in mm (inches) 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. 2.54 (0.100) 2 1 3 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 45 TO-39 (TO-205AD) METAL PACKAGE Underside View Pin 1 - Emitter Pin 2 - Base Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Pin 3 - Collector Website: http://www.semelab-tt.com Document Number 8367 Issue 1 Page 3 of 3