SILICON PLANAR EPITAXIAL
NPN TRANSISTOR
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Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 8367
Issue 1
Page 1 of 3
2N4237
• VCBO=50V(Min), VCEO=40V(Min)
• Hermetic TO-39 Metal package.
• Ideally suited for General Purpose and
Amplifier Applications
• Screening Options Available
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise stated)
VCBO Collector – Base Voltage 50V
VCEO Collector – Emitter Voltage 40V
VEBO Emitter – Base Voltage 6V
IC Continuous Collector Current 1.0A
IB Base Current 0.5A
PD Total Power Dissipation at TA = 25°C 1.0W
Derate Above 25°C 5.7mW/°C
PD Total Power Dissipation at TC = 25°C 6W
Derate Above 25°C 34mW/°C
TJ Junction Temperature Range -65 to +200°C
Tstg Storage Temperature Range -65 to +200°C
THERMAL PROPERTIES
Symbols Parameters Min. Typ. Max. Units
RθJA Thermal Resistance, Junction To Ambient 175 °C/W
RθJC
Thermal Resistance, Junction To Case 29 °C/W
SILICON PLANAR EPITAXIAL
NPN TRANSISTOR
2N4237
Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 8367
Issue 1
Page 2 of 3
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise stated)
Symbols Parameters Test Conditions Min.
Typ Max.
Units
V(BR)CEO
(1)
Collector-Emitter
Breakdown Voltage IC = 10mA IB = 0 40 V
VCE = 50V VBE = -1.5V 100 nA
VCE = 30V VBE = -1.5V
ICEX Collector Cut-Off Current
TA = 150°C 25 µA
ICBO Collector Cut-Off Current VCB = 50V IE = 0 100 nA
IEBO Emitter Cut-Off Current VEB = 6V IC = 0 0.5 mA
IC = 100mA VCE = 1.0V 30
IC = 250mA VCE = 1.0V 30 150
TA = -55°C 15
hFE
(1)
Forward-current transfer
ratio
IC = 500mA VCE = 1.0V 30
IC = 500mA IB = 50mA 0.3
VCE(sat)
(1)
Collector-Emitter Saturation
Voltage IC = 1.0A IB = 0.1A 0.6
IC = 500mA IB = 50mA 1.0
VBE(sat)
(1)
Base-Emitter Saturation
Voltage IC = 1.0A IB = 0.1A 1.5
V
DYNAMIC CHARACTERISTICS
IC = 100mA VCE = 10V
| hfe | Small signal forward-current
transfer ratio f = 10MHz
3.0
VCB = 10V IE = 0
Cobo Output Capacitance f = 1.0MHz 100 pF
Notes
NotesNotes
Notes
(1) Pulse Width ≤ 300us, δ ≤ 2%
SILICON PLANAR EPITAXIAL
NPN TRANSISTOR
2N4237
Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 8367
Issue 1
Page 3 of 3
MECHANICAL DATA
Dimensions in mm (inches)
TO
-
39 (TO
-
205AD
) METAL PACKAGE
Underside View
Pin 1 - Emitter Pin 2 - Base Pin 3 - Collector
0.89
(0.035)
max.
12.70
(0.500)
min. 0.41 (0.016)
0.53 (0.021)
dia.
5.08 (0.200)
typ.
0.71 (0.028)
0.86 (0.034)
2.54
(0.100)
45°
6.10 (0.240)
6.60 (0.260)
8.51 (0.34)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
1
2
3
0.74 (0.029)
1.14 (0.045)
