DGD05473FNQ
HIGH FREQUENCY HIGH-SIDE AND LOW-SIDE GATE DRIVER IN U-DFN3030-10
Description
The DGD05473 is a high-frequency gate driver capable of driving N-
channel MOSFETs. The floating high-side driver is rat ed up to 50V.
The DGD05473 logic inputs are compatible with standard
TTL and
CMOS levels (down to 3.3V) to interface easily with MCUs.
UVLO for
high-side and low-side protects
a MOSFET with loss of supply. To
protect MOSFETs, cross conduc tion prevention logic prevents the HO
and LO outputs from being on at the same time.
Fast and well-
matched propagation delays allow a higher switching
frequency, enabl ing a smaller, more compact power switchi ng design,
using smaller associated components.
To minimize space an internal
bootstrap diode is included. The DGD05473 is offered in
the
U-DFN3030-10 package and operates over an extended
-40°C to +125°C temperature range.
Applications
• DC-DC Converters
• Motor Controls
• Battery Powered Hand Tools
• eCig Devices
• Class D Power Amplifiers
Features
• 50V Floating High-Side Driver
• Drives Two N-Channel MOSFETs in a Half-Bridge Configuration
• 1.5A Source / 2.5A Sink Output Current Capability
• Internal Bootstrap Diode Included
• Undervoltage Lockout for High-Side and Low-Side Drivers
• Delay Matching Maxmim um of 5ns
• Propagation Delay Typical of 20ns
• Logic Input (HIN, LIN and EN) 3.3V Capability
• Ultra Low Standby Current s (<1µA)
• Extended Temperature Range: -4 0°C to +125°C
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q100 Standards for High Reliability
• PP AP Capable (Note 4)
Mechanical Data
• Case: U-DFN3030-10
• Case Material: Molded Plastic. “Green” Molding Compound
• UL Flammability Classification Rating 94V-0
• Moisture Sensitivi t y: Level 3 per J-STD-020
• Terminals: Finish—NiPdAu
• Solderable per MIL-STD-202, Method 208
• Weight: 0.017 grams (Approximate)
Ordering Information (Note 4 & 5)
Product
Compliance
Marking
Reel Size (inches)
Tape Width (mm)
Quantity per Reel
DGD05473FNQ-7
Automotive
DGD05473
7
8
3000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony -free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/quality/product_compliance_definitions/.
5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
U-DFN3030-10
Top View
YYWW
DGD05473
DGD05473 = Product Type Marking Code
YY = Year (ex: 1
8 = 2018)
WW = Week (01
to 53)
Typical Configurat i on
Bottom View
e4
DGD05473FNQ
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DGD05473FNQ
Pin Assignments
Pin Descriptions
Pin Numb er
Pin Name
Function
1
VCC
Low-Side and Logic Supply
2
NC
No connect (No Internal Connecti on)
3
VB
High-Side Floating Supply
4
HO
High-Side Gat e Drive Output
5
VS
High-Side Fl oating Supply Ret urn
6
EN
Logic Input Enable, a Logic Low turns off Gate Driver
7
HIN
Logic Input for High-Side Gate Driver, in P hase with HO
8
LIN
Logic Input for Low-Side Gate Driver, in Phase with LO
9
COM
Low-Side and Logic Return
10
LO
Low-Side Gate Drive Output
PAD
Substrate
Connect to COM on PCB
Functional Bloc k Diagram
Top View: U-DFN3030-10
DGD05473FNQ
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Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified. )
Characteristic
Symbol
Value
Unit
High-Side Floating Positive Supply Voltage
VB
-0.3 to +60
V
High-Side Floating Negative Supply Voltage
VS
VB-14 to VB+0.3
V
High-Side Floating Output Voltage
VHO
VS-0.3 to VB+0.3
V
Offset Supply Volt age Transi ent
dVS / dt
50
V/ns
Logic and Low-Side Fixed Supply Voltage
VCC
-0.3 to +14
V
Low-Side Output Voltage
VLO
-0.3 to VCC+0.3
V
Logic Input Voltage (HIN, LIN and EN)
VIN
-0.3 to VCC+0.3
V
Bootstrap Diode Current (Pulsed <10µs)
IBD
1
A
Thermal Characteristics (@TA = +25°C, unless otherwise specifi ed. )
Characteristic
Symbol
Value
Unit
Power Dissipation Linear Derating Factor (Note 5)
PD
0.4
W
Thermal Resistance, Junction to Ambient (Note 5)
RϴJA
64 °C/W
Thermal Resistanc e, Juncti on to Case (Note 5)
RϴJC
42
°C/W
Operating Temperature
TJ
+150
°C
Lead Temperature (Soldering, 10s)
TL
+300
Storage Temperature Range
TSTG
-55 to +150
Note: 5. When mounted on a standard JEDEC 2-layer FR-4 board.
Recommended Operating Conditions
Parameter Symbol Min Max Unit
High-Side Floating Supply
VB
VS + 4.4
VS + 14
V
High-Side Floating Supply Offset Voltage
VS
(Note 6)
50 (Note 7)
V
High-Side Fl oating Output Voltage
VHO
VS
VB
V
Logic and Low Side Fixed Supply Voltage
VCC
4.7 (Note 8)
14
V
Low-Side Output Voltage
VLO
0
VCC
V
Logic Input Voltage (HIN, LIN and EN)
VIN
0
5
V
Ambient Temperature
TA
-40
+125
°C
Notes: 6. Logic operation for VS of -5V to +50V.
7. Provided VB doesn’t exceed absolute maximum rating of 60V.
8. For operation of VCC = 4.7V to 4.9V, an external bootstrap Schottky diode (0.3V Vfd, 1A) is necessary, see Figure 4. For operation VCC ≥ 4.9V, the
external Schottky diode is not required.
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DC Electrical Characteristics (VCC = VBS = 12V, COM = VS = 0V, @TA = +25°C, unless otherwise specif i ed. ) (Note 9)
Parameter Symbol Min Typ Max Unit Conditions
Logic “1” Input Voltage
VIH
2.4
—
—
V
—
Logic “0” Input Voltage
VIL
—
—
0.8
V
—
Enable Logic “1” Input Voltage
VENIH
1.6
—
–
V
—
Enable Logic “0” Input Voltage
VENIL
—
—
0.7
V
—
Input Voltage Hysteresis
VINHYS
—
0.6
–
V
—
Enable Input Voltage Hysteresis
VENINHYS
—
0.1
–
V
—
High Level Output Voltage, VBIAS - VO
VOH
—
0.45
0.6
V
IO+ = 100mA
Low Level Output Voltage, VO
VOL
—
0.15
0.22
V
IO- = 100mA
Offset Supply Leakage Current
ILK
—
1
5
µA
VB = VS = 60V
VCC Shutdown Supply Current
ICCSD
—
0
1
µA
VIN = 0V or 5V, VEN = 0V
VCC Quiescent Supply Current
ICCQ
—
130
200
µA
VIN = 0V or 5V
VCC Operating Supply Current
ICCOP
—
7.3
—
mA
fs = 500kHz, CL = 1000pF
VBS Quiescent Supply Current
IBSQ
—
40
100
µA
VIN = 0V or 5V
VBS Operating Supply Current
IBSOP
—
7.3
—
mA
fs = 500kHz. CL = 1000pF
Logic “1” Input Bias Current
IIN+
—
—
50
µA
VIN = 5V
Logic “0” Input Bias Current
IIN-
—
—
5
µA
VIN = 0V
Enable Logic “1” Input Bias Current
IENIN+
—
43
60
µA
VIN = 5V
Enable Logic “0” Input Bias Current
IENIN-
—
0
5
µA
VIN = 0V
VBS Supply Undervoltage P ositi ve Going Thres hol d
VBSUV+
3.3
3.8
4.4
V
—
VBS Supply Undervoltage Negati ve Going Threshold
VBSUV-
2.9
3.3
3.9
V
—
VCC Supply Undervoltage Positi ve Going Threshold
VCCUV+
3.3
3.8
4.4
V
—
VCC Supply Undervoltage Negative Going Threshol d
VCCUV-
2.9
3.3
3.9
V
—
Output High Short Circuit Pulsed Current
IO+
1.0
1.5
—
A
VO = 0V, PW ≤ 10µs
Output Low Short Circuit Puls ed Current
IO-
1.9
2.5
—
A
VO = 15V, PW ≤ 10µs
Forward Voltage of Bootstrap Di ode
VF1
—
0.67
—
V
IF = 100µA
Forward Voltage of Bootstrap Diode
VF2
—
1.2
—
V
IF = 100mA
Note: 9. The VIN and IIN parameters are applicable to the logic pins: HIN, L IN and EN. The VO and IO parameters are applicable to the respective output pins:
HO and LO.
AC Electrical Characteristics (VCC = VBS = 12V, COM = VS = 0V, CL = 1000pF, @TA = +25°C, unless otherwise specified.)
Parameter
Symbol
Min
Typ
Max
Unit
Conditions
Turn-on Propagation Del ay
tON
—
20
35
ns
—
Turn-off Propagation Delay
tOFF
—
23
56
ns
VS = 50V
Delay Matching, HO & LO Turn-on
tDM
—
—
5
ns
—
Turn-on Rise Time
tr
—
16
30
ns
—
Turn-of f Fall Time
tf
—
12
25
ns
—
DGD05473FNQ
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Typi cal Perfo rmance Ch aract eristics (@TA = +25°C, unless otherwise specified.)
t
ON High Side
tON
Low Side
t
ON
High Side
t
ON Low Side
t
OFF
High Side
tOFF Low Side
t
OFF
High Side
tOFF
Low Side
t
R
High Side
tR Low Side
t
R High Side
tR
Low Side
Figure 5.
Figure 6.
Figure 7.
Figure 8.
Figure 9.
Figure 10.
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Typi cal Perfo rmance Ch aract eristics (continued)
t
F
High Side
tF
Low Side
t
F
High Side
tF
Low Side
I
BSQ
ICCQ
I
BSQ
ICCQ
t
DM(ON)
tDM(OFF)
t
DM(ON)
tDM(OFF)
Figure 11.
Figure 12.
Figure 13.
Figure 14.
Figure 15.
Figure 16.
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Typi cal Perfo rmance Ch aract eristics (continued)
I
O+
High Side
IO+ Low Side
I
O-
High Side
IO- Low Side
I
O-
High Side
IO-
Low Side
I
O+
High Side
IO+
Low Side
V
IH
High Side
VIH Low Side
V
IH High Side
V
IH Low Side
Figure 22.
Figure 21.
Figure 20.
Figure 19.
Figure 18.
Figure 17.
DGD05473FNQ
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Package Ou t lin e Dim en sio ns
Please see http://www.diodes.com/package-outlines.html for the latest versi on.
U-DFN3030-10
U-DFN3030-10
Dim Min Max Typ
A
0.57
0.63
0.60
A1
0.00
0.05
0.02
A3
––
––
0.15
b
0.20
0.30
0.25
D
2.90
3.10
3.00
D2
2.30
2.50
2.40
E
2.90
3.10
3.00
E2
1.50
1.70
1.60
e
—
—
0.50
L
0.25
0.55
0.40
z
––
––
0.375
All Dimensions in mm
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest versi on.
U-DFN3030-10
Dimensions
Value
(in mm)
C
0.50
G
0.15
X
0.35
X1
2.60
Y
0.60
Y1
1.80
AA1 A3
Seating Plane
D
D2
E
eb
E2
( Pin #1 ID)
L
R0.300
z
Y1
X
Y
C
X1
G
G
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application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
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website, harml ess against all damages.
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written approval of the Chief Executive Off icer of Diodes I ncorporat ed. As us ed herein:
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representati ves against any dam ages arising out of the use of Diodes Incorporat ed products i n such safety-cri tical, life support devices or systems.
Copyright © 2019, Diodes Incorporated
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