Document Number: 83523 For technical questions, contact: optocoupler.answers@vishay.com www.vishay.com
Rev. 2.1, 10-Dec-08 531
Optocoupler, Phototransistor Output, AC Input
K814P, K824P, K844P
Vishay Semiconductors
DESCRIPTION
The K814P, K824P, K844P consist of a phototransistor
optically coupled to 2 gallium arsenide infrared emitting
diodes (reverse polarity) in 4 pin (single); 8 pin (dual) or
16-pin (quad) plastic dual inline package.
The elements are mounted on one leadframe providing a
fixed distance between input and output for highest safety
requirements.
FEATURES
• Endstackable to 2.54 mm (0.1") spacing
• DC isolation test voltage VISO = 5000 VRMS
• Low coupling capacitance of typical 0.3 pF
• Current transfer ratio (CTR) of typical 100 %
• Low temperature coefficient of CTR
• Wide ambient temperature range
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC and
WEEE 2002/96/EC
APPLICATIONS
• Feature phones
• Answering machines
• PBX
• Fax machines
AGENCY APPROVALS
• UL1577, file no. E76222 system code U, double protection
• C-UL CSA 22.2, bulletin 5A
C
CE
AC
4pin
8pin
16 pin
17220_2
1
ORDER INFORMATION
PART REMARKS
K814P CTR > 20 %, single channel, DIP-4
K824P CTR > 20 %, dual channel, DIP-8
K844P CTR > 20 %, quad channel, DIP-16
ABSOLUTE MAXIMUM RATINGS (1)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
INPUT
Forward current IF± 60 mA
Forward surge current tp ≤ 10 µs IFSM ± 1.5 A
Power dissipation Pdiss 100 mW
Junction temperature Tj125 °C
OUTPUT
Collector emitter voltage VCEO 70 V
Emitter collector voltage VECO 7V
Collector current IC50 mA
Collector peak current tp/T = 0.5, tp ≤ 10 ms ICM 100 mA
Power dissipation Pdiss 150 mW
Junction temperature Tj125 °C
www.vishay.com For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83523
532 Rev. 2.1, 10-Dec-08
K814P, K824P, K844P
Vishay Semiconductors Optocoupler, Phototransistor
Output, AC Input
Notes
(1) Tamb = 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
(2) Refer to wave profile for soldering conditions for through hole devices.
Note
Tamb = 25 °C, unless otherwise specified.
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
COUPLER
AC isolation test voltage (RMS) t = 1.0 min VISO 5000 VRMS
Total power dissipation Ptot 250 mW
Operating ambient temperature range Tamb - 40 to +100 °C
Storage temperature range Tstg - 55 to + 125 °C
Soldering temperature (3) 2 mm from case, t ≤ 10 s Tsld 260 °C
ELECTRICAL CHARACTERISTICS
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage IF = ± 50 mA VF1.25 1.6 V
Reverse current VR = ± 6 V IR10 µA
OUTPUT
Collector emitter voltage IC = 100 µA VCEO 70 V
Emitter collector voltage IE = 100 µA VECO 7V
Collector dark current VCE = 20 V, IF = 0, E = 0 ICEO 100 nA
COUPLER
Collector emitter saturation voltage IF = ± 10 mA, IC = 1 mA VCEsat 0.3 V
Cut-off frequency IF = ± 10 mA, VCE = 5 V,
RL = 100 Ωfc100 kHz
Coupling capacitance f = 1 MHz Ck0.3 pF
ABSOLUTE MAXIMUM RATINGS (1)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
CURRENT TRANSFER RATIO
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
IC/IFVCE = 5 V, IF = ± 5 mA K814P CTR 20 300 %
SWITCHING CHARACTERISTICS
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Delay time VS = 5 V, IC = 2 mA, RL = 100 Ω (see figure 1) td3µs
Rise time VS = 5 V, IC = 2 mA, RL = 100 Ω (see figure 1) tr3µs
Fall time VS = 5 V, IC = 2 mA, RL = 100 Ω (see figure 1) tf4.7 µs
Storage time VS = 5 V, IC = 2 mA, RL = 100 Ω (see figure 1) ts0.3 µs
Turn-on time VS = 5 V, IC = 2 mA, RL = 100 Ω (see figure 1) ton 6µs
Turn-off time VS = 5 V, IC = 2 mA, RL = 100 Ω (see figure 1) toff 5µs
Turn-on time VS = 5 V, IC = 10 mA, RL = 1 kΩ (see figure 1) ton 9µs
Turn-off time VS = 5 V, IC = 10 mA, RL = 1 kΩ (see figure 1) toff 18 µs
Document Number: 83523 For technical questions, contact: optocoupler.answers@vishay.com www.vishay.com
Rev. 2.1, 10-Dec-08 533
K814P, K824P, K844P
Optocoupler, Phototransistor
Output, AC Input Vishay Semiconductors
Fig. 1 - Test Circuit, Non-Saturated Operation
Fig. 2 - Test Circuit, Saturated Operation
Fig. 3 - Switching Times
TYPICAL CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
Fig. 4 - Total Power Dissipation vs. Ambient Temperature Fig. 5 - Forward Current vs. Forward Voltage
Channel I
Channel II
13343
R
G
= 50 Ω
t
p
t
p
= 50 µs
T= 0.01
+ 5 V
I
F
0
50 Ω100 Ω
I
F
I
C
= 2 mA; adjusted through
input amplitude
Oscilloscope
R
L
> 1 MΩ
C
L
< 20 pF
Channel I
Channel II
13344
R
G
= 50
t
p
t
p
= 50 µs
T= 0.01
+ 5 V
I
F
0
50 1 k
I
F
= 10 mA
I
C
Oscilloscope
R
L
> 1 M
C
L
< 20 pF
tpt
t
0
0
10 %
90 %
100 %
tr
td
ton
tstf
toff
IF
IC
tpPulse duration
tdDelay time
trRise time
ton (= td + tr) Turn-on time
tsStorage time
tfFall time
toff (= ts + tf)Turn-off time
96 11698
0
50
100
150
200
250
300
04080 120
P
tot
- Total Power Dissipation (mW)
T
amb
- Ambient Temperature (°C)
96 11700
Coupled device
Phototransistor
IR-diode
0.1
1
10
100
1000
0
V
F
- Forward Voltage (V)
96 11862
I
F
- Forward Current (mA)
1.6
0.2 1.4
1.2
1.0
0.80.6
0.4 2.0
1.8
www.vishay.com For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83523
534 Rev. 2.1, 10-Dec-08
K814P, K824P, K844P
Vishay Semiconductors Optocoupler, Phototransistor
Output, AC Input
Fig. 6 - Relative Current Transfer Ratio vs. Ambient Temperature
Fig. 7 - Collector Dark Current vs. Ambient Temperature
Fig. 8 - Collector Current vs. Forward Current
Fig. 9 - Collector Current vs. Collector Emitter Voltage
Fig. 10 - Collector Emitter Saturation Voltage vs. Collector Current
Fig. 11 - Current Transfer Ratio vs. Forward Current
- 25 0 25 50
0
0.5
1.0
1.5
2.0
CTRrel - Relative Current Transfer Ratio
95 11025
75
Tamb - Ambient Temperature (°C)
VCE = 5 V
IF = 5 mA
0255075
1
10
100
1000
10 000
ICEO - Collector Dark Current,
100
95 11026
with Open Base (nA)
VCE = 20 V
IF = 0
Tamb - Ambient Temperature (°C)
0.1 1 10
0.01
0.1
1
100
IC - Collector Current (mA)
IF - Forward Current (mA)
100
95 11027
10
VCE = 5 V
0.1 1 10
0.1
1
10
100
VCE - Collector Emitter Voltage (V)
100
95 10985
IC - Collector Current (mA)
I
F
= 50 mA
5 mA
2 mA
1 mA
20 mA
10 mA
110
0
0.2
0.4
0.6
0.8
1.0
VCEsat - Collector Emitter
Saturation Voltage (V)
IC - Collector Current (mA)
100
CTR = 50 %
used
20 % used
95 11028
10 % used
0.1 1 10
1
10
100
1000
CTR - Current Transfer Ratio (%)
IF - Forward Current (mA)
100
95 11029
VCE = 5 V
Document Number: 83523 For technical questions, contact: optocoupler.answers@vishay.com www.vishay.com
Rev. 2.1, 10-Dec-08 535
K814P, K824P, K844P
Optocoupler, Phototransistor
Output, AC Input Vishay Semiconductors
Fig. 12 - Turn-on/Turn-off Time vs. Forward Current Fig. 13 - Turn-on/Turn-off Time vs. Collector Current
PACKAGE DIMENSIONS in millimeters
01015
0
10
20
30
40
50
I
F
- Forward Current (mA)
20
95 11031
t
on
/t
off
- Turn-on/Turn-off Time (µs)
Saturated operation
VS = 5 V
RL = 1 kΩ
toff
ton
504
0
2
4
6
8
10
IC - Collector Current (mA)
8
95 11030
ton/toff- Turn-on /Turn-off Time (µs)
Non-saturated
operation
VS = 5 V
RL = 100 Ω
toff
ton
6
2
14789
technical drawings
according to DIN
specifications
Weight: ca. 0.25 g
Creepage distance: > 6 mm
Air path: > 6 mm
after mounting on PC board
0.25 ± 0.05
7.62 nom.
9 ± 0.8
3.6 ± 0.1
6.3 ± 0.1
0.53 ± 0.05
1.32 ± 0.05
2.54 nom.
4.4 ± 0.2
3.3
4.5 ± 0.2
< 4.75
1 2
4 3
2.54
2.54
E. g.:
Special features: endstackable
to 2.54 mm (0.100") spacing
www.vishay.com For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83523
536 Rev. 2.1, 10-Dec-08
K814P, K824P, K844P
Vishay Semiconductors Optocoupler, Phototransistor
Output, AC Input
14783
< 20
19.7 ± 0.2
0.53 ± 0.05
1.32 ± 0.05
2.54 nom.
0.25 ± 0.05
7.62 nom.
3.3
7 x 2.54 = 17.78
technical drawings
according to DIN
specifications
9 ± 0.8
4.4 ± 0.2
3.6 ± 0.1
6.3 ± 0.1
Weight: ca. 1.08 g
Creepage distance: > 6 mm
Air path: > 6 mm
after mounting on PC board
1 2 3 4 5 6 7 8
16 15 14 13 12 11 10 9
14784
technical drawings
according to DIN
specifications
Weight: ca. 0.55 g
Creepage distance: > 6 mm
Air path: > 6 mm
after mounting on PC board
2.54 nom.
7.62 nom.
< 9.8
9 ± 0.8
3.3
4.4 ± 0.2
3.6 ± 0.1
0.53 ± 0.05
1.32 ± 0.05
3 x 2.54 = 7.62
9.5 ± 0.2
6.3 ± 0.1
1 2 3 4
8 7 6 5
0.25 ± 0.05
Document Number: 83523 For technical questions, contact: optocoupler.answers@vishay.com www.vishay.com
Rev. 2.1, 10-Dec-08 537
K814P, K824P, K844P
Optocoupler, Phototransistor
Output, AC Input Vishay Semiconductors
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It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with
respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone
depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use
within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in
the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively.
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency
(EPA) in the USA.
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do
not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application by the
customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall
indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any
claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Legal Disclaimer Notice
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Revision: 08-Feb-17 1Document Number: 91000
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