LOW POWER LOW OFFSET VOLTAGE QUAD COMPARATORS AZ339
1
Apr. 2008 Rev. 1. 4 BCD Semiconductor Manufacturing Limited
Data Sheet
General Description
The AZ339 series consists of four independent preci-
sion voltage comp arators with an offset voltage speci-
fication as low as 2mV. The input common mode
voltage range of these comparators includes ground,
even when operated from a single power supply volt-
age. Operation from split power supplies is also possi-
ble and the low power supply current drain is
independent of the magnitude of the power supply
voltage.
The AZ339 series is designed to directly interface with
TTL and CMOS.
The AZ339 series can be widely used in such applica-
tions as battery charger, cordless telephone, switching
power supply, DC-DC module and PC motherboard.
The AZ339 series are available in 2 Packages: DIP-14
and SOIC-14.
Features
·Wide Supply Voltage Range
- Single Supply: 2.0V to 18V
- Dual Supplies: ±1.0V to ± 9V
·Very Low Supply Current Drain: 0.8mA
- Independent of Supply Voltage
·Low Input Bias Current: 25nA (Typical)
·Low Input Offs et Current: ±5nA (Typical)
·Low Input Offset Voltage: ±2mV (Typical)
·Input Common Mode Voltage Range Includes
Ground
·Differential Input Voltage Range Equals to the
Power Supply Voltage
·Low Output Saturation Voltage: 250mV at 4mA
·Open Collector Output
Applications
·Battery Charger
·Cordless Telep hone
·Switching Power Supply
·DC-DC Module
·PC Motherboard
·Communication Equipment
Figure 1. Package Types of AZ339
DIP-14 SOIC-14
LOW POWER LOW OFFSET VOLTAGE QUAD COMPARATORS AZ339
2
Apr. 2008 Rev. 1. 4 BCD Semiconductor Manufacturing Limited
Data Sheet
Figure 2. Pin Configuration of AZ339 (Top View)
Figure 3. Functional Block Diagram of AZ339
SOIC-14/DIP-14
(Each Comparator)
Functional Block Diagram
+INPUT
-INPUT
Q5 Q6
Q1 Q2 Q3 Q4
Q7
Q8 OUTPUT
VCC
3.5μA100μA3.5μA100μA
M Package/P Package
Pin Configuration
OUTPUT 2
OUTPUT 1
VCC
INPUT 1-
INPUT 1+
INPUT 2-
INPUT 2+
OUTPUT 3
OUTPUT 4
GND
INPUT 4+
INPUT 4-
INPUT 3+
INPUT 3-
1
2
3
4
5
6
78
9
10
11
12
13
14
LOW POWER LOW OFFSET VOLTAGE QUAD COMPARATORS AZ339
3
Apr. 2008 Rev. 1. 4 BCD Semiconductor Manufacturing Limited
Data Sheet
Ordering Information
Package Temperature
Range Part Number Marking ID Packing Type
Lead Free Green Lead Free Green
SOIC-14 -40 to 85 oCAZ339M-E1 AZ339M-G1 AZ339M-E1 AZ339M-G1 Tube
AZ339MTR-E1 AZ339MTR-G1 AZ339M-E1 AZ339M-G1 Tape & Reel
DIP-14 -40 to 85 oCAZ339P-E1 AZ339P-G1 AZ339P-E1 AZ339P-G1 Tube
BCD Semiconductor's Pb-free products, as designated with "E1" suf fix in the part number, are RoHS compliant. Products with
"G1" suffix are available in green packages.
Circuit Type
Package
M: SOIC-14
E1: Lead Free
G1: Green
AZ339 -
TR: Tape and Reel
Blank: Tube
P: DIP-14
LOW POWER LOW OFFSET VOLTAGE QUAD COMPARATORS AZ339
4
Apr. 2008 Rev. 1. 4 BCD Semiconductor Manufacturing Limited
Data Sheet
Parameter Symbol Value Unit
Supply Voltage VCC 20 V
Differential Input Voltage VID 20 V
Input Voltage VIN -0.3 to 20 V
Input Current (VIN < -0.3V) (N ote 2) IIN 50 mA
Power Dissipation (TA=25oC) PD
DIP-14 1050
mW
SOIC-14 890
Output Short Circuit to Ground Continuous
Operating Junction Temperature TJ150 oC
Storage Temperature Range TSTG -65 to 150 oC
Lead Temperature (Soldering, 10 seconds) TLEAD 260 oC
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the
device. These are stress ratings only, and functional operation of the device at these or any other conditions
beyond those indicated un der "Recommended Operating Co nditions" is not implied. Exposure to "Absolute Max-
imum Ratings" for extended peri ods may affect device reliability.
Note 2: This input current will only exist when the voltage at any of the input leads is driven negative. It is due to
the collector-base junction of the input PNP transistors becoming forward biased and thereby acting as input diode
clamps. In addition to this diode action, there is also lateral NPN parasitic transistor action on the IC chip. This
transistor action can cause the output vo ltages of the comparators to go to the V+ voltag e level (or to ground for a
large overdrive) for the time duration that an input is driven negative. This is not destructive and normal output
states will re-establish when the input volt age, which was negative, again returns to a value greater than -0.3 VDC
(at 25oC).
Recommended Operating Conditions
Parameter Symbol Min Max Unit
Supply Voltage VCC 218V
Operating Temperature Range TA-40 85 oC
Absolute Maximum Ratings (Note 1)
LOW POWER LOW OFFSET VOLTAGE QUAD COMPARATORS AZ339
5
Apr. 2008 Rev. 1. 4 BCD Semiconductor Manufacturing Limited
Data Sheet
Electrical Characteristics
VCC=5V, GND=0V, TA=25oC, unless otherwise specified.
Parameter Conditions Min Typ Max Unit
Input Offset Voltage (Note 3) 2.0 5.0 mV
Input Bias Current IIN+ or IIN- with output in linear range,
VCM=0V (Note 4) 25 250 nA
Input Offset Current IIN+-IIN-, VCM=0V 5.0 50 nA
Input Common Mode
Voltage Range VCC=15V (Note 5) 0 VCC-1.5 V
Supply Current RL=on all comparators 0.8 2.0 mA
RL=∞, VCC=18V 1.0 2.5
Voltage Gain RL15KΩ, VCC=15V, VO=1V to 11V 50 200 V/mV
Large Signal
Response Time VIN=TTL logic swing, VREF=1.4V,
VRL=5V, RL=5.1KΩ
300 ns
Response Time VRL=5V, RL=5.1KΩ (N ote 6) 1.3 μs
Output Sink Current VIN-=1V, VIN+=0, VO1.5V 6.0 16 mA
Saturation Voltage VIN-=1V, VIN+=0, ISINK 4mA 250 400 mV
Output Leakage Current VIN-=0, VIN+=1V, VO=5V 0.1 nA
Note 3: At output switch poi nt, VO=1.4V, RS=0 with V CC from 5V to 15V, and over the full common-mode range
(0V to VCC-1.5V), at 25oC.
Note 4: The direction of the inp ut current is out of the PNP input st age. This current is essentially const ant, inde-
pendent of the state of the output, so no loading charge exists on the reference of input lines.
Note 5: The input common-mode voltage of either input signal voltage should not be allowed to go negative by
more than 0.3V. The upper end of the common-mode volt age range is VCC-1.5V, but either or both inputs can go
to +18V without damage, independent of the m agnitude of VCC.
Note 6: The response time specified is a 100mV input step with 5mV overdrive. For large overdrive signals 300ns
can be obtained.
LOW POWER LOW OFFSET VOLTAGE QUAD COMPARATORS AZ339
6
Apr. 2008 Rev. 1. 4 BCD Semiconductor Manufacturing Limited
Data Sheet
Figure 6. Output Sink Current vs. Saturation Voltage Figure 7. Response Time for 5mV Input
Overdrive - Negative Transition
Figure 8. Response Time for 5mV Input
Overdrive - Positive Transition
Figure 4. Supply Voltage vs. Supply Current
Figure 5. Supply Voltage vs. Input Current
Input Voltage Output Voltage
Time (
μ
S)
Input Voltage Output Voltage
Time (
μ
S)
0 0.2 04 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
-95mV
5mV
0
2V
4V
6V
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
-5mV
95mV
0V
2V
4V
6V
Typical Performance Characteristics
VIN
VCC
5.1K
VOUT
+
_
024681012141618
0
5
10
15
20
25
30
85Co
25Co
-40Co
Input Current (nADC)
Supply V oltage (VDC)
VIN
VCC
5.1K
VOUT
+
_
0 2 4 6 8 10 12 14 16 18
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
85Co
25Co
-40Co
Supply Cu rr en t (mA)
Supply Voltage (VDC)
0.01 0.1 1 10 100
1E-3
0.01
0.1
1
10
25oC
-40oC
85oC
Saturation Voltage (VDC)
Output Sink Current (mA)
LOW POWER LOW OFFSET VOLTAGE QUAD COMPARATORS AZ339
7
Apr. 2008 Rev. 1. 4 BCD Semiconductor Manufacturing Limited
Data Sheet
Figure 11. One Shot Multivibrator
75pF
100K
VCC
4.3K
VO
100K
100K
-
+
VIN
1/4 AZ339
Figure 12. Squarewave Osillator
+VIN
+VREF
VCC
3K
VO
+
-
1/4 AZ339
Figure 9. Basic Comparator Figure 10. Driving CMOS/TTL
Typical Applications
1M IN914
IN914
1M
1M
VCC
VO
10K
-
+
+VIN
100pF
0.001μF
1/4 AZ339
LOW POWER LOW OFFSET VOLTAGE QUAD COMPARATORS AZ339
8
Apr. 2008 Rev. 1. 4 BCD Semiconductor Manufacturing Limited
Data Sheet
SOIC-14 Unit: mm(inch)
Mechanical Dimensions
8.550(0.337)
1.350(0.053)
7°
7°
0.700(0.028) 0.100(0.004)
0.250(0.010)
0.500(0.020)
1°
R0.200(0.008)
20:1
A
0.280(0.011)×45°
8°
A
8°
0.190(0.007)
9.5°
8°
0°
8°
Depth 0.060(0.002)
0.100(0.004)
2.000(0.079)
1.270(0.050)
1.000(0.039)
1.300(0.051)
5.800(0.228)
8.750(0.344)
0.250(0.010)
1.750(0.069)
0.250(0.010)
3.800(0.150)
4.000(0.157)
0.330(0.013)
0.510(0.020)
6.200(0.244)
0.600(0.024)
5°
R0.200(0.008)
0.250(0.010)
0.200(0.008)MIN
0.480(0.019)×45°
φ
LOW POWER LOW OFFSET VOLTAGE QUAD COMPARATORS AZ339
9
Apr. 2008 Rev. 1. 4 BCD Semiconductor Manufacturing Limited
Data Sheet
DIP-14 Unit: mm(inch)
Mechanical Dimensions (Continued)
4°
0.254(0.010)
5°
10°10°
4°
18.800(0.740)
19.200(0.756)
0.360(0.014)
0.560(0.022) 2.540(0.100)TYP
R1.000(0.039)
0.130(0.005)MIN
7.620(0.300)TYP
0.700(0.028)
Φ3.000(0.118)
Depth
0.100(0.004)
0.200(0.008)
8.200(0.323)
9.400(0.370)
0.204(0.008)
0.360(0.014)
1.600(0.063)
1.800(0.071)
1.600(0.063)
1.800(0.071)
1.524(0.060) TYP
3.000(0.118)
3.600(0.142)
0.510(0.020)MIN
6.200(0.244)
6.600(0.260)
IMPORTANT NOTICE
BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-
cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility fo r use of any its products for any
particular purpose, nor does BCD Semiconductor Man ufacturing Limited assume any liability arising out of the application or use
of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or
other rights nor the rights of others.
- Wafer Fab
Shanghai SIM-BCD Semiconductor Manufacturing Limited
800, Yi Shan Road, Shanghai 200233, China
Tel: +86-21-6485 1491, Fax: +86-21-5450 0008
BCD Semiconductor Manufacturing Limited
MAIN SITE
REGIONAL SALES OFFICE
Shenzhen Office
Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. Shenzhen Office
Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office
Room E, 5F, Noble Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen 518026, China
Tel: +86-755-8826 7951
Fax: +86-755-8826 7865
Taiwan Office
BCD Semiconductor (Taiwan) Company Limited
4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei,
Taiwan
Tel: +886-2-2656 2808
Fax: +886-2-2656 2806
USA Office
BCD Semiconductor Corporation
30920 Huntwood Ave. Hayward,
CA 94544, U.S.A
Tel : +1-510-324-2988
Fax: +1-510-324-2788
- IC Design Group
Advanced Analog Circuits (Shanghai) Corporation
8F, Zone B, 900, Yi Shan Road, Shanghai 200233, China
Tel: +86-21-6495 9539, Fax: +86-21-6485 9673
BCD Semiconductor Manufacturing Limited
http://www.bcdsemi.com
BCD Semiconductor Manufacturing Limited
IMPORTANT NOTICE
BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-
cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility fo r use of any its products for any
particular purpose, nor does BCD Semiconductor Man ufacturing Limited assume any liability arising out of the application or use
of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or
other rights nor the rights of others.
- Wafer Fab
Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd.
800 Yi Shan Road, Shanghai 200233, China
Tel: +86-21-6485 1491, Fax: +86-21-5450 0008
MAIN SITE
REGIONAL SALES OFFICE
Shenzhen Office
Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd., Shenzhen Office
Room E, 5F, Noble Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen,
518026, China
Tel: +86-755-8826 7951
Fax: +86-755-8826 7865
Taiwan Office
BCD Semiconductor (Taiwan) Company Limited
4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei,
Taiwan
Tel: +886-2-2656 2808
Fax: +886-2-2656 2806
USA Office
BCD Semiconductor Corp.
30920 Huntwood Ave. Hayward,
CA 94544, USA
Tel : +1-510-324-2988
Fax: +1-510-324-2788
- Headquarters
BCD Semiconductor Manufacturing Limited
No. 1600, Zi Xing Road, Shanghai ZiZhu Science-based Industrial Park, 200241, China
Tel: +86-21-24162266, Fax: +86-21-24162277