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Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
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April 1st, 2010
Renesas Electronics Corporation
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Rev.2.00 Sep 07, 2005 page 1 of 6
2SK1169, 2SK1170
Silicon N Channel MOS FET REJ03G0916-0200
(Previous : AD E-208- 1 254)
Rev.2.00
Sep 07, 2005
Application
High speed po wer switc hing
Features
• Low on-resistance
• High speed switc hing
• Low drive current
• No secondary breakdown
• Suitable for switching regulator and DC-DC converter
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
1. Gate
2. Drain
(Flange)
3. Source
D
G
S
123
2SK1169, 2SK1170
Rev.2.00 Sep 07, 2005 page 2 of 6
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
2SK1169 450 Drain to source voltage 2SK1170 VDSS 500 V
Gate to source voltage VGSS ±30 V
Drain current ID 20 A
Drain peak current ID(pulse)*1 80 A
Body to drain diode reverse drain current IDR 20 A
Channel dissipation Pch*2 120 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at TC = 25°C
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
2SK1169 450 Drain to source
breakdown voltage 2SK1170 V(BR)DSS 500 — — V ID = 10 mA, VGS = 0
Gate to source breakdown voltage V(BR)GSS ±30 — — V IG = ±100 µA, VDS = 0
Gate to source leak current IGSS — — ±10 µA VGS = ±25 V, VDS = 0
2SK1169 VDS = 360 V, VGS = 0 Zero gate voltage drain
current 2SK1170 IDSS — — 250 µA VDS = 400 V, VGS = 0
Gate to source cutoff volta ge VGS(off) 2.0 — 3.0 V ID = 1 mA, VDS = 10 V
2SK1169 — 0.20 0.25 Static drain to source on
state resistance 2SK1170 RDS(on) — 0.22 0.27 Ω I
D = 10 A, VGS = 10 V *3
Forward transfer admittance |yfs| 10 16 — S ID = 10 A, VDS = 10 V *3
Input capacitan ce Ciss — 2800 — pF
Output capacitance Coss — 780 — pF
Reverse transfer capacitance Crss — 90 — pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Turn-on delay time td(on) — 32 — ns
Rise time tr — 115 — ns
Turn-off delay time td(off) — 200 — ns
Fall time tf — 90 — ns
ID = 10 A, VGS = 10 V,
RL = 3 Ω
Body to drain diode forward voltage VDF — 1.0 — V IF = 20 A, VGS = 0
Body to drain diode reverse recovery
time trr — 500 — ns IF = 20 A, VGS = 0,
diF/dt = 100 A/µs
Note: 3. Pulse test
2SK1169, 2SK1170
Rev.2.00 Sep 07, 2005 page 3 of 6
Main Characteristics
Power vs. Temperature Derating
150
100
50
0
Channel Dissipation Pch (W)
50 100 150
Case Temperature TC (°C)
Maximum Safe Operation Area
100
30
10
3
0.1
1 3 10 30 100 300 1,000
Drain to Source Voltage VDS (V)
Drain Current ID (A)
1.0
0.3 2SK1170
2SK1169
Operation in this area
is limited by R
DS (on)
1 ms
10 µs
100 µs
Ta = 25°C
PW = 10 ms (1Shot)
DC Operation (T
C
= 25
°
C)
Typical Output Characteristics
50
30
20
10
010 20 30 50
Drain to Source Voltage VDS (V)
Drain Current ID (A)
6 V
40
40
V
GS
= 4 V
Pulse Test
5 V
10 V 7 V
Typical Transfer Characteristics
20
16
8
4
0246810
Gate to Source Voltage VGS (V)
Drain Current ID (A)
12
T
C
= 25°C
75°C–25°C
V
DS
= 20 V
Pulse Test
10
8
4
2
04 8 12 16 20
6
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage
VDS (on) (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Pulse Test
10 A
I
D
= 5 A
20 A
5
2
1.0
0.5
0.05
1 2 5 20 50 100
Drain Current ID (A)
0.1
0.2
Pulse Test
10
V
GS
= 10 V
15 V
Static Drain to Source on State Resistance
RDS (on) (Ω)
Static Drain to Source on State
Resistance vs. Drain Current
2SK1169, 2SK1170
Rev.2.00 Sep 07, 2005 page 4 of 6
1.0
0.8
0.6
0.4
0.2
0
0 40 80 120 160
Case Temperature T
C
(°C)
–40
Static Drain to Source on State
Resistance vs. Temperature
V
GS
= 10 V
Pulse Test
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
10 A
I
D
= 20 A
5 A
Forward Transfer Admittance
vs. Drain Current
50
20
10
5
0.5
0.2 0.5 1.0 5 10 20
Drain Current I
D
(A)
1.0
2
2
75°C
Forward Transfer Admittance yfs (S)
T
C
= 25°C
V
DS
= 20 V
Pulse Test
–25°C
Body to Drain Diode Reverse
Recovery Time
di/dt = 100 A/µs, Ta = 25°C
V
GS
= 0
Pulse Test
Reverse Drain Current I
DR
(A)
Reverse Recovery Time trr (ns)
5,000
2,000
500
200
100
50
1,000
0.5 1.0 2 5 10 20 50
Typical Capacitance
vs. Drain to Source Voltage
100
01020304050
Drain to Source Voltage V
DS
(V)
Capacitance C (pF)
Coss
Ciss
Crss
10
V
GS
= 0
f = 1 MHz
1,000
10,000
Dynamic Input Characteristics
500
400
300
200
100
040 80 120 160 200
Gate Charge Qg (nc)
Drain to Source Voltage V
DS
(V)
20
16
12
8
4
0
Gate to Source Voltage V
GS
(V)
V
DD
= 100 V
V
DD
= 400 V
250 V
250 V
V
DS
I
D
= 20 A
400 V
V
GS
100 V
Switching Characteristics
500
100
50
20
10
5
200
Switching Time t (ns)
0.5 1.0 2 5 10 20 50
Drain Current I
D
(A)
V
GS
= 10 V V
DD
= 30 V
PW = 2 µs, duty < 1%
t
d (off)
t
r
t
f
t
d (on)
•
•
2SK1169, 2SK1170
Rev.2.00 Sep 07, 2005 page 5 of 6
Reverse Drain Current vs.
Source to Drain Voltage
20
16
12
8
4
00.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V
SD
(V)
Reverse Drain Current I
DR
(A)
Pulse Test
5 V, 10 V
V
GS
= 0, –10 V
3
1.0
0.1
0.03
0.01
0.3
10 µ100 µ1 m 10 m 100 m 1 10
Pulse Width PW (S)
θch–c (t) = γ
S
(t) • θch–c
θch–c = 1.04°C/W,T
C
= 25°C
P
DM
PW
T
D = T
PW
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance γ
S
(t)
T
C
= 25°C
0.01
0.05
0.02
0.2
0.1
0.5
1 Shot Pulse
D = 1
Vin Monitor
Vout Monitor
R
L
50 Ω
Vin = 10 V
D.U.T
.
V
DD
= 30 V
.
Switching Time Test Circuit
Vin 10 %
90 %
90 %
90 %
10 %
td (on) td (off)
trtf
Vout 10 %
Waveforms
2SK1169, 2SK1170
Rev.2.00 Sep 07, 2005 page 6 of 6
Package Dimensions
φ
3.2 ± 0.2
4.8 ± 0.2
1.5
0.3
2.8
0.6 ± 0.2
1.0 ± 0.2
18.0 ± 0.5 19.9 ± 0.2
15.6 ± 0.3
0.5
1.0
5.0 ± 0.3
1.6
1.4 Max 2.0
2.0
14.9 ± 0.2
3.6 0.9
1.0
5.45 ± 0.55.45 ± 0.5
Package Name
PRSS0004ZE-A TO-3P / TO-3PV
MASS[Typ.]
5.0gSC-65
RENESAS CodeJEITA Package Code
Unit: mm
Ordering Information
Part Name Quantity Shipping Container
2SK1169-E 360 pcs Box (Tube)
2SK1170-E 360 pcs Box (Tube)
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
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1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
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