1. Product profile
1.1 General description
Very low capacitance bidirectional ElectroStatic Discharge (ESD) protection diodes in
small Surface-Mounted Device (SMD) plastic packages designed to protect one signal
line from the damage caused by ESD and other transients.
1.2 Features
1.3 Applications
1.4 Quick reference data
PESD5V0V1BA;PESD5V0V1BB;
PESD5V0V1BL
Very low capacitance bidirectional ESD protection diodes
Rev. 01 — 28 July 2009 Product data sheet
Table 1. Product overview
Type number Package Package configuration
NXP JEITA
PESD5V0V1BA SOD323 SC-76 very small
PESD5V0V1BB SOD523 SC-79 ultra small and flat lead
PESD5V0V1BL SOD882 - leadless ultra small
nBidirectional ESD protection of one line nESD protection up to 30 kV
nVery low diode capacitance: Cd=11pF nIEC 61000-4-2; level 4 (ESD)
nMax. peak pulse power: PPP =45W nIEC 61000-4-5 (surge); IPP = 4.8 A
nLow clamping voltage: VCL = 12.5 V nAEC-Q101 qualified
nUltra low leakage current: IRM <1nA
nComputers and peripherals nCommunication systems
nAudio and video equipment nPortable electronics
nCellular handsets and accessories n10/100 Mbit/s Ethernet
nSubscriber Identity Module (SIM) card
protection
nFireWire
Table 2. Quick reference data
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
VRWM reverse standoff voltage - - 5 V
Cddiode capacitance f = 1 MHz; VR=0V- 1113pF
PESD5V0V1BA_BB_BL_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 28 July 2009 2 of 13
NXP Semiconductors PESD5V0V1BA/BB/BL
Very low capacitance bidirectional ESD protection diodes
2. Pinning information
[1] The marking bar indicates pin 1.
3. Ordering information
4. Marking
5. Limiting values
Table 3. Pinning
Pin Description Simplified outline Graphic symbol
PESD5V0V1BA; PESD5V0V1BB
1 cathode (diode 1) [1]
2 cathode (diode 2)
PESD5V0V1BL
1 cathode (diode 1) [1]
2 cathode (diode 2)
001aab540
12
sym045
21
21
Transparent
top view
sym045
21
Table 4. Ordering information
Type number Package
Name Description Version
PESD5V0V1BA SC-76 plastic surface-mounted package; 2 leads SOD323
PESD5V0V1BB SC-79 plastic surface-mounted package; 2 leads SOD523
PESD5V0V1BL - leadless ultra small plastic package; 2 terminals;
body 1.0 ×0.6 ×0.5 mm SOD882
Table 5. Marking codes
Type number Marking code
PESD5V0V1BA 1K
PESD5V0V1BB Z9
PESD5V0V1BL X1
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per diode
PPP peak pulse power tp= 8/20 µs[1] -45W
IPP peak pulse current tp= 8/20 µs[1] - 4.8 A
PESD5V0V1BA_BB_BL_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 28 July 2009 3 of 13
NXP Semiconductors PESD5V0V1BA/BB/BL
Very low capacitance bidirectional ESD protection diodes
[1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.
[1] Device stressed with ten non-repetitive ESD pulses.
Per device
Tjjunction temperature - 150 °C
Tamb ambient temperature 55 +150 °C
Tstg storage temperature 65 +150 °C
Table 7. ESD maximum ratings
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Max Unit
VESD electrostatic discharge voltage IEC 61000-4-2
(contact discharge) [1] -30kV
machine model - 2 kV
MIL-STD-883 (human
body model) -16kV
Table 8. ESD standards compliance
Standard Conditions
IEC 61000-4-2; level 4 (ESD) > 15 kV (air); > 8 kV (contact)
MIL-STD-883; class 3B (human body model) > 8 kV
Table 6. Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Fig 1. 8/20 µs pulse waveform according to
IEC 61000-4-5 Fig 2. ESD pulse waveform according to
IEC 61000-4-2
t (µs)
0403010 20
001aaa630
40
80
120
IPP
(%)
0
et
100 % IPP; 8 µs
50 % IPP; 20 µs
001aaa631
IPP
100 %
90 %
t
30 ns 60 ns
10 %
tr = 0.7 ns to 1 ns
PESD5V0V1BA_BB_BL_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 28 July 2009 4 of 13
NXP Semiconductors PESD5V0V1BA/BB/BL
Very low capacitance bidirectional ESD protection diodes
6. Characteristics
[1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.
Table 9. Characteristics
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
VRWM reverse standoff voltage - - 5 V
IRM reverse leakage current VRWM = 5 V - < 1 10 nA
VBR breakdown voltage IR= 5 mA 5.8 6.8 7.8 V
Cddiode capacitance f = 1 MHz;
VR=0V - 1113pF
VCL clamping voltage IPP = 4.8 A [1] - - 12.5 V
rdif differential resistance IR=5mA --35
Tamb =25°C
Fig 3. Peak pulse power as a function of exponential
pulse duration; typical values Fig 4. Relative variation of peak pulse power as a
function of junction temperature; typical
values
tp (µs)
110
3
102
10
006aab606
102
10
103
PPP
(W)
1
Tj (°C)
0 20015050 100
001aaa193
0.4
0.8
1.2
PPP
0
PPP(25°C)
PESD5V0V1BA_BB_BL_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 28 July 2009 5 of 13
NXP Semiconductors PESD5V0V1BA/BB/BL
Very low capacitance bidirectional ESD protection diodes
f = 1 MHz; Tamb =25°C
Fig 5. Diode capacitance as a function of reverse
voltage; typical values Fig 6. Relative variation of reverse leakage current
as a function of junction temperature; typical
values
Fig 7. V-I characteristics for a bidirectional ESD protection diode
VR (V)
054231
006aab607
8
10
12
Cd
(pF)
6
006aab608
1
101
102
10
103
102
Tj (°C)
100 15010005050
IRM
IRM(25°C)
006aaa676
VCL VBR VRWM VCL
VBR
VRWM
IRM
IRM
IR
IR
IPP
IPP
+
PESD5V0V1BA_BB_BL_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 28 July 2009 6 of 13
NXP Semiconductors PESD5V0V1BA/BB/BL
Very low capacitance bidirectional ESD protection diodes
Fig 8. ESD clamping test setup and waveforms
006aab609
50
RZ
CZDUT
(DEVICE
UNDER
TEST)
GND
450 RG 223/U
50 coax
ESD TESTER
acc. to IEC 61000-4-2
CZ = 150 pF; RZ = 330
4 GHz DIGITAL
OSCILLOSCOPE
10×
ATTENUATOR
unclamped +8 kV ESD pulse waveform
(IEC 61000-4-2 network)
vertical scale = 10 A/div
horizontal scale = 15 ns/div
GND
unclamped 8 kV ESD pulse waveform
(IEC 61000-4-2 network)
vertical scale = 10 A/div
horizontal scale = 15 ns/div
clamped +8 kV ESD pulse waveform
(IEC 61000-4-2 network)
vertical scale = 10 V/div
horizontal scale = 100 ns/div
GND
clamped 8 kV ESD pulse waveform
(IEC 61000-4-2 network)
GND
vertical scale = 10 V/div
horizontal scale = 100 ns/div
PESD5V0V1BA_BB_BL_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 28 July 2009 7 of 13
NXP Semiconductors PESD5V0V1BA/BB/BL
Very low capacitance bidirectional ESD protection diodes
7. Application information
The PESD5V0V1Bx series is designed for the protection of one bidirectional data or
signal line from the damage caused by ESD and surge pulses. The devices may be used
on lines where the signal polarities are both, positive or negative with respect to ground.
The PESD5V0V1Bx series provides a surge capability of 45 W per line for an 8/20 µs
waveform.
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)
and surge transients. The following guidelines are recommended:
1. Place the device as close to the input terminal or connector as possible.
2. The path length between the device and the protected line should be minimized.
3. Keep parallel signal paths to a minimum.
4. Avoid running protected conductors in parallel with unprotected conductors.
5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and
ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Ground planes should be used whenever possible. For multilayer PCBs, use ground
vias.
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard
Q101 - Stress test qualification for discrete semiconductors
, and is
suitable for use in automotive applications.
Fig 9. Application diagram
006aab610
PESD5V0V1Bx
GND
line to be protected
PESD5V0V1BA_BB_BL_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 28 July 2009 8 of 13
NXP Semiconductors PESD5V0V1BA/BB/BL
Very low capacitance bidirectional ESD protection diodes
9. Package outline
10. Packing information
[1] For further information and the availability of packing methods, see Section 14.
Fig 10. Package outline
PESD5V0V1BA (SOD323/SC-76) Fig 11. Package outline
PESD5V0V1BB (SOD523/SC-79)
Fig 12. Package outline PESD5V0V1BL (SOD882)
03-12-17Dimensions in mm
0.25
0.10
0.45
0.15
2.7
2.3 1.8
1.6
0.40
0.25
1.1
0.8
1.35
1.15
1
2
02-12-13Dimensions in mm
1.65
1.55 1.25
1.15
0.17
0.11
0.34
0.26
0.65
0.58
0.85
0.75
1
2
03-04-17Dimensions in mm
0.55
0.47
0.65
0.62
0.55 0.50
0.46
cathode marking on top side
1.02
0.95
0.30
0.22
0.30
0.22
2
1
Table 10. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number Package Description Packing quantity
3000 8000 10000
PESD5V0V1BA SOD323 4 mm pitch, 8 mm tape and reel -115 - -135
PESD5V0V1BB SOD523 2 mm pitch, 8 mm tape and reel - -315 -
4 mm pitch, 8 mm tape and reel -115 - -135
PESD5V0V1BL SOD882 2 mm pitch, 8 mm tape and reel - - -315
PESD5V0V1BA_BB_BL_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 28 July 2009 9 of 13
NXP Semiconductors PESD5V0V1BA/BB/BL
Very low capacitance bidirectional ESD protection diodes
11. Soldering
Fig 13. Reflow soldering footprint PESD5V0V1BA (SOD323/SC-76)
Fig 14. Wave soldering footprint PESD5V0V1BA (SOD323/SC-76)
0.951.65
2.2
2.1
3.05
solder lands
solder resist
occupied area
solder paste
0.5
(2×)
0.6
(2×)
0.6 (2×)0.5 (2×)
sod323_fr
Dimensions in mm
1.5 (2×)
2.9
5
1.2
(2×)
2.75
sod323_fw
solder lands
solder resist
occupied area
preferred transport
direction during soldering
Dimensions in mm
PESD5V0V1BA_BB_BL_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 28 July 2009 10 of 13
NXP Semiconductors PESD5V0V1BA/BB/BL
Very low capacitance bidirectional ESD protection diodes
Reflow soldering is the only recommended soldering method.
Fig 15. Reflow soldering footprint PESD5V0V1BB (SOD523/SC-79)
Reflow soldering is the only recommended soldering method.
Fig 16. Reflow soldering footprint PESD5V0V1BL (SOD882)
solder lands
solder resist
occupied area
solder paste
Dimensions in mm
0.6
(2×)
0.5
(2×)
2.15
1.1
0.7
(2×)
0.8
(2×)
1.2
sod523_fr
solder lands
solder resist
occupied area
solder paste
sod882_fr
0.9
0.3
(2×)
R0.05 (8×)
0.6
(2×) 0.7
(2×)
0.4
(2×)
1.3
0.7
Dimensions in mm
PESD5V0V1BA_BB_BL_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 28 July 2009 11 of 13
NXP Semiconductors PESD5V0V1BA/BB/BL
Very low capacitance bidirectional ESD protection diodes
12. Revision history
Table 11. Revision history
Document ID Release date Data sheet status Change notice Supersedes
PESD5V0V1BA_BB_BL_1 20090728 Product data sheet - -
PESD5V0V1BA_BB_BL_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 28 July 2009 12 of 13
NXP Semiconductors PESD5V0V1BA/BB/BL
Very low capacitance bidirectional ESD protection diodes
13. Legal information
13.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
13.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
NXP Semiconductors PESD5V0V1BA/BB/BL
Very low capacitance bidirectional ESD protection diodes
© NXP B.V. 2009. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 28 July 2009
Document identifier: PESD5V0V1BA_BB_BL_1
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
15. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4
7 Application information. . . . . . . . . . . . . . . . . . . 7
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 7
8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 7
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
10 Packing information. . . . . . . . . . . . . . . . . . . . . . 8
11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11
13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12
13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12
13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
14 Contact information. . . . . . . . . . . . . . . . . . . . . 12
15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13