- Switching and General Purpose Transistors an/ 22 (SILICON) Veto = 35-45 V 2N1132,A,B (] Ic = 500-600 mA 2N1132 USN/JAN + = 900 MHs 2N2303 T= 200 MHz Typ PNP silicon annular transistors for medium-current switching applications. CASE 22 CASE 31 (TO-18) (TO-5) 2N722 2N1132, A 2N2303 Collector connected to case MAXIMUM RATINGS Rating Symbol Valve Unit Collector-Base Voltage VcoB Vde 2N722, 2N1132, 2N2303 50 2N1132A 60 2N1132B 70 Collector-Emitter Voltage VCEO Vde 2N722, 2N1132, 2N2303 35 2N1132A 40 2N1132B 45 Emitter-Base Voltage VEB Vde 2N722, 2N1132, 2N1132A, 2N2303 5 2N1132B 6 Collector-Emitter Voltage VcER Vde (Rup = 109) 2N722, 2N1132, 2N1132A, 2N2303 50 2N1132B 60 Collector Current Ic mAdc 2N2303 500 2N1132A, 2N1132B 600 Total Device Dissipation @ Tc = 25C Pp TO-5: 2N1132, 2N1132A, 2N1132B, 2N2303 2 Watts Derating Factor Above 25C 13.3 mW/C TO-18: 2N722 1.5 Watts Derating Factor Above 25C 10 mW/C Total Device Dissipation @ T, = 25C Pp TO-5: 2N1132, 2N1132A, 2N1132B, 2N2303 0.6 Watt Derating Factor Above 25C 4.0 mwW/C TO-18:; 2N722 0.4 Watt Derating Factor Above 25C 2.6 mW/C Junction Temperature Ty +175 oc Storage Temperature Range Tstg -65 to+ 200 C 8-36