Philips Components BYQ27 SERIES blue binder, tab 8 ULTRA FAST-RECOVERY DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency double rectifier diodes in plastic envelopes, featuring low forward voltage drop, ultra fast reverse recovery times and soft recovery characteristic. They are intended for use in switched-mode power supplies and high-frequency circuits in general, where both low conduction losses and low switching losses are essential. Their single chip (monolithic) construction ensures excellent matching of the forward and switching characteristics of the two halves, allowing parallel operation without the need for derating. The series consists of common cathode types. QUICK REFERENCE DATA Per diode, unless otherwise stated BYQ27-50 | 100 | 150 | 200 Repetitive peak reverse voltage VRRM max. 50 100 | 150 200 Vv Output current {both diodes conducting) lo max. 10 A Forward voltage : VE < 0.85 Vv Reverse recovery time ter < 20 ns MECHANICAL DATA Dimensions in mm Fig. 1 SOT-82. ae 28 eg cathode connected 2,3 t 78 oO metal part of + max mounting surface t Y 3,75 ay a2 3,2 |\ 1 3,0 4 1 i; nh | 4 max k "2,54" | a . 7 a) le t2 15,3 min al} kool | T Y | | I I M3063 o45e->! | . el le olo2gle 0,5 0,88 max *Within this region the cross-section of the leads is uncontrolled. Net mass: 2g Accessories supplied on request: see data sheets Mounting instructions and accessories for SOT-82 envelopes. eS PHILIPS June 1988 iBYQ27 SERIES RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134). BYQ27-50 Voltages (per diode) Repetitive peak reverse voltage Crest working reverse voltage Continuous reverse voltage Currents (both diodes conducting; note 1) Output current; switching losses negligible up to 500 kHz; square wave; = 0.5; up to Tmp = 120 C sinusoidal; up to Tmp = 118 OC R.M.S. forward current Repetitive peak forward current tp = 20 us, = 0.02 (per diode) Non-repetitive peak forward current (per diode) half sine-wave; Tj = 150 C prior to surge; with reapplied VRwmM max t= 10ms t=8.3ms I? for fusing (t = 10 ms, per diode) Temperatures Storage temperature Junction temperature THERMAL RESISTANCE From junction to mounting base (both diodes conducting) From junction to mounting base (per diode) Influence of mounting method 1, Heatsink-mounted with clip (see mounting instructions) Thermal resistance from mounting base to heatsink a. with heatsink compound b. with heatsink compound and 0.06 mm maximum mica insulator (56354) c. without heatsink compound 2. Free air operation VRRM VRWM VR lo max. lo max. lE(RMS) max. leERM max. lFSM max. lFSm max. it max. Tstg Tj max. Rthj-mb = Rthj-mb = Rth mb-h = Rth mb-h = Rth mb-h= 10 10 14 80 50 60 12.5 40 to +150 150 3.0 45 0.3 1.4 1.4 As C oC K/wW K/W K/w K/w K/W The quoted value of Rip j-a should be used only when no leads of other dissipating components run to the same tie point. Thermal resistance from junction to ambient in free air: mounted on a printed circuit board at any device lead length and with copper laminate on the board Notes: Rthj-a = 100 K/W 1. The limits for both diodes apply whether both diodes conduct simultaneously or on alternate half cycles, 2 June 1988Ultra fast recovery double rectifier diodes BYQ27 SERIES CHARACTERISTICS (per diode) Forward voltage Ip = 5A;Tj = 150 C Ve < 0.85 v* Ip=15A;T,= 25C Ve < 13.V* Reverse current Vr = VRWM max: Tj = 100 C IR < 0.2 mA Vr = VRWM maxi-Tj = 25 OC IR < 10 HA Reverse recovery when switched from IF =1A to VR = 30 V with di /dt = 100 A/us; Tj= 25 C recovery time ter < 20 ns Ip = 2A to VR > 30 V with dlp/dt = 20 A/us; Tj = 25 C recovered charge Qs < 5.5 nc Ip =5 A to Vp = 30 V with dip/dt = 50 A/us; Tj = 25 OC peak recovery current IRRM < 0.7 A Forward recovery when switched to lp = 1A with dig/dt = 10 A/us; Tj = 25 C recovery voltage Ver typ. 1.0 Vv M80-1319/3 IF 10% I time F le dI, wc VF tre + time son i Vir Oo dig 100% Qs at l 100% RRM t Ip M1247 time Fig.2 Definition of tyy, gs and IRR. Fig.3 Definition of Vr. *Measured under pulse conditions to avoid excessive dissipation. June 1988 3BYQ27 SERIES MOUNTING INSTRUCTIONS 1. The device may be soldered directly into the circuit, but the maximum permissible temperature of the soldering iron or bath is 275 C; the heat source must not be in contact with the joint for more than 5 seconds. Soldered joints must be at least 4.7 mm from the seal. 2. The leads should not be bent less than 2.4 mm from the seal, and should be supported during bending. The bend radius must be no less than 1.0 mm. 3. Mounting by means of a spring clip is recommended. 4. For good thermal contact heatsink compound should be used between mounting base and heatsink. Values of Rth mb-h given for mounting with heatsink compound refer to the use of a metallic-oxide loaded compound. Ordinary silicone grease is not recommended. 5. Body mounting. _ A SOT-82 envelope can be adhesive-mounted or soldered into a hybrid circuit. For soldering, a copper plate or an anodized aluminium plate with copper layer is recommended. When adhesive mounting is applied also a ceramic substrate may be used. OPERATING NOTES Dissipation and heatsink calculations. The various components of junction temperature rise above ambient are illustrated in Fig.4. 7 junction 1 junction 2 3.0K/W 3.0K/W | Rth j-mb | 1.5K/W mounting 0 1 Reh j-a base )Pth mbh Py heatsink | Rth ha | oS ambient M3048 Fig.4. Any measurement of heatsink temperature should be made immediately adjacent to the device. June 1988Ultra fast recovery double rectifier diodes BYQ27 SERIES SQUARE-WAVE OPERATION (PER DIODE) 11 7.5 Prot (W) 5.0 2.5 Ig(avy(A) 10 M3073 20 90 Prot Tmb (Ww) (C) 15 105 10 120 5 135 0 150 0 50 100 150 Tamb!C) Fig.5 Power rating per diode. The individual power loss in each diode should first be determined then both added together. The resulting total power loss is then used in-conjunction with Fig.6 to determine the heatsink size and corres- ponding maximum ambient and mounting base temperatures. t ba Pet set io fo v! Lecd 7H le(av) = 'E(RMS) XV8 Fig.6. June 1988 5BYQ27 SERIES SINUSOIDAL OPERATION (PER DIODE) M1717 a 1.57 Prot 19 (Ww) : 2.2 2 9 0 2.5 lE(ayy'A) 5 Fig.7 Power rating per diode. The individual power loss in each diode should first be determined then both added together. The resulting total power Joss is then used in conjunction with Fig.6 to determine the heatsink size and corres- ponding maximum ambient and mounting base temperatures, a= form factor = |F(RMS)/IF(AV) 6 June 1988Ultra fast recovery double rectifier diodes BYQ27 SERIES 102 [FRM (A) 1 107! 1 10 ty/T(%) 102 Fig.8 Maximum permissible repetitive peak forward current for either square or sinusoidal currents for Tus< tp <1ms. 15 M1719 \ \ F a ~ v1 FRM I | | le time F | tp ke (A) | Pp T M1246 10 Definition of IF Ry and tp/T Fig.9 Tj = 25 C; - T; = 150 o 0 1 VE (Vv) 2 per diode. June 1988BYQ27 SERIES M1720 103 try (ns) 102 10 1 1 10 dip/dt(A/us) 10? Fig. 10 Maximum try at Tj = 25 OC. 102 M1722 (nC) 10 107" 2 1 10 dIp/dt(A/us) 10 10 1 M1721 1 10 dlg/dt(A/us) 107 Fig.11 Maximum ty, at Tj = 100 C. Fig.12 Maximum Qg at Tj = 25 C. 8 June 1988BYQ27 SERIES Ultra fast recovery double rectifier diodes 10 M1723 10 M3066 'RRM (A} RRM (A) 1 1 107" 19-1 1072 2 10-2 1 10 dip/dt(A/us) 10 1 10 dip/dt(A/us) 102 Fig.13 Maximum IRRqy at Tj = 25 9C. Fig.14 Maximum IRR at Tj = 100 C. 102 M3053 2th jmb (KAW) 10 10-1 10-2 5 107 10-4 1073 10-2 1071 1 time(s} 10 Fig.15 One diode conducting. June 1988