© Semiconductor Components Industries, LLC, 2007
March, 2007 − Rev. 1
1Publication Order Number:
74HC86/D
74HC86
Quad 2−Input Exclusive
OR Gate
High−Performance Silicon−Gate CMOS
The 74HC86 is identical in pinout to the LS86. The device inputs are
compatible with standard CMOS outputs; with pullup resistors, they
are compatible with LSTTL outputs.
Features
•Output Drive Capability: 10 LSTTL Loads
•Outputs Directly Interface to CMOS, NMOS, and TTL
•Operating Voltage Range: 2.0 to 6.0 V
•Low Input Current: 1.0 A
•High Noise Immunity Characteristic of CMOS Devices
•In Compliance with JEDEC Standard No. 7A Requirements
•ESD Performance: HBM 2000 V; Machine Model 200 V
•Chip Complexity: 56 FETs or 14 Equivalent Gates
•These are Pb−Free Devices
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MARKING
DIAGRAMS
HC86 = Device Code
A = Assembly Location
L, WL = Wafer Lot
Y = Year
W = Work Week
G or G= Pb−Free Package
TSSOP−14
DT SUFFIX
CASE 948G
14
1
SOIC−14
D SUFFIX
CASE 751A
14
1
HC86G
AWLYWW
1
14
HC
86
ALYWG
G
1
14
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
(Note: Microdot may be in either location)
74HC86
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2
LOGIC DIAGRAM
Y1
Y2
Y3
Y4
A1
B1
A2
B2
A3
B3
A4
B4
1
2
4
5
9
10
12
13
3
6
8
11
PIN 14 = VCC
PIN 7 = GND
Y = A ⊕ B
= AB + AB
PIN ASSIGNMENT
11
12
13
14
8
9
105
4
3
2
1
7
6
B3
Y4
A4
B4
VCC
Y3
A3
A2
Y1
B1
A1
GND
Y2
B2
FUNCTION TABLE
A
L
L
H
H
Inputs Output
B
L
H
L
H
Y
L
H
H
L
ORDERING INFORMATION
Device Package Shipping†
74HC86DR2G SOIC−14
(Pb−Free) 2500 / Tape & Reel
74HC86DTR2G TSSOP−14*
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*This package is inherently Pb−Free.
74HC86
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3
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS
Symbol Parameter Value Unit
VCC DC Supply Voltage (Referenced to GND) – 0.5 to + 7.0 V
Vin DC Input Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V
Vout DC Output Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V
Iin DC Input Current, per Pin ±20 mA
Iout DC Output Current, per Pin ±25 mA
ICC DC Supply Current, VCC and GND Pins ±50 mA
PDPower Dissipation in Still Air, SOIC Package†
TSSOP Package†
500
450
mW
Tstg Storage Temperature – 65 to + 150 _C
TLLead Temperature, 1 mm from Case for 10 Seconds
(SOIC or TSSOP Package) 260
_C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress
ratings only. Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device
reliability.
†Derating — SOIC Package: – 7 mW/_C from 65_ to 125_C
TSSOP Package: − 6.1 mW/_C from 65_ to 125_C
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Min Max Unit
VCC DC Supply Voltage (Referenced to GND) 2.0 6.0 V
Vin, Vout DC Input Voltage, Output Voltage (Referenced to
GND)
0 VCC V
TAOperating Temperature, All Package Types – 55 + 125 _C
tr, tfInput Rise and Fall Time VCC = 2.0 V
(Figure 1) VCC = 4.5 V
VCC = 6.0 V
0
0
0
1000
500
400
ns
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high−impedance cir-
cuit. For proper operation, Vin and
Vout should be constrained to the
range GND v (Vin or Vout) v VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.
74HC86
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4
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Symbol Parameter Test Conditions
VCC
(V)
Guaranteed Limit
Unit
– 55 to
25_Cv 85_Cv 125_C
VIH Minimum High−Level Input
Voltage
Vout = 0.1 V or VCC – 0.1 V
|Iout| v 20 A
2.0
3.0
4.5
6.0
1.5
2.1
3.15
4.2
1.5
2.1
3.15
4.2
1.5
2.1
3.15
4.2
V
VIL Maximum Low−Level Input
Voltage
Vout = 0.1 V or VCC – 0.1 V
|Iout| v 20 A
2.0
3.0
4.5
6.0
0.5
0.9
1.35
1.8
0.5
0.9
1.35
1.8
0.5
0.9
1.35
1.8
V
VOH Minimum High−Level Output
Voltage
Vin = VIH or VIL
|Iout| v 20 A
2.0
4.5
6.0
1.9
4.4
5.9
1.9
4.4
5.9
1.9
4.4
5.9
V
Vin = VIH or VIL |Iout| v 2.4 mA
|Iout| v 4.0 mA
|Iout| v 5.2 mA
3.0
4.5
6.0
2.48
3.98
5.48
2.34
3.84
5.34
2.20
3.70
5.20
VOL Maximum Low−Level Output
Voltage
Vin = VIH or VIL
|Iout| v 20 A
2.0
4.5
6.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
Vin = VIH or VIL |Iout| v 2.4 mA
|Iout| v 4.0 mA
|Iout| v 5.2 mA
3.0
4.5
6.0
0.26
0.26
0.26
0.33
0.33
0.33
0.40
0.40
0.40
Iin Maximum Input Leakage Current Vin = VCC or GND 6.0 ±0.1 ±1.0 ±1.0 A
ICC Maximum Quiescent Supply
Current (per Package)
Vin = VCC or GND
Iout = 0 A
6.0 2.0 20 40 A
NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book
(DL129/D).
AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input t, = tf = 6 ns)
Symbol Parameter
VCC
(V)
Guaranteed Limit
Unit
– 55 to
25_Cv 85_Cv 125_C
tPLH,
tPHL
Maximum Propagation Delay, Input A or B to Output Y
(Figures 1 and 2)
2.0
3.0
4.5
6.0
100
80
20
17
125
90
25
21
150
110
31
26
ns
tTLH,
tTHL
Maximum Output Transition Time, Any Output
(Figures 1 and 2)
2.0
3.0
4.5
6.0
75
30
15
13
95
40
19
16
110
55
22
19
ns
Cin Maximum Input Capacitance — 10 10 10 pF
NOTES:
1. For propagation delays with loads other than 50 pF, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).
2. Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).
CPD Power Dissipation Capacitance (Per Gate)*
Typical @ 25°C, VCC = 5.0 V
pF
33
* Used to determine the no−load dynamic power consumption: PD = CPD VCC2f + ICC VCC. For load considerations, see Chapter 2 of the
ON Semiconductor High−Speed CMOS Data Book (DL129/D).
74HC86
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5
*Includes all probe and jig capacitance
CL*
TEST POINT
DEVICE
UNDER
TEST
OUTPUT
Figure 1. Switching Waveforms Figure 2. Test Circuit
OUTPUT Y
INPUT
A OR B
90%
50%
10%
tTLH tTHL
tPLH tPHL
trtf
GND
VCC
90%
50%
10%
A
B
Y
Figure 3. Expanded Logic Diagram
(1/4 of Device)
74HC86
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6
PACKAGE DIMENSIONS
SOIC−14
CASE 751A−03
ISSUE H
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE
DAMBAR PROTRUSION. ALLOWABLE
DAMBAR PROTRUSION SHALL BE 0.127
(0.005) TOTAL IN EXCESS OF THE D
DIMENSION AT MAXIMUM MATERIAL
CONDITION.
−A−
−B−
G
P7 PL
14 8
7
1
M
0.25 (0.010) B M
S
B
M
0.25 (0.010) A S
T
−T−
F
RX 45
SEATING
PLANE D14 PL K
C
J
M
_DIM MIN MAX MIN MAX
INCHESMILLIMETERS
A8.55 8.75 0.337 0.344
B3.80 4.00 0.150 0.157
C1.35 1.75 0.054 0.068
D0.35 0.49 0.014 0.019
F0.40 1.25 0.016 0.049
G1.27 BSC 0.050 BSC
J0.19 0.25 0.008 0.009
K0.10 0.25 0.004 0.009
M0 7 0 7
P5.80 6.20 0.228 0.244
R0.25 0.50 0.010 0.019
__ __
7.04
14X
0.58
14X
1.52
1.27
DIMENSIONS: MILLIMETERS
1
PITCH
SOLDERING FOOTPRINT*
7X
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
74HC86
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7
PACKAGE DIMENSIONS
TSSOP−14
CASE 948G−01
ISSUE B
DIM MIN MAX MIN MAX
INCHESMILLIMETERS
A4.90 5.10 0.193 0.200
B4.30 4.50 0.169 0.177
C−−− 1.20 −−− 0.047
D0.05 0.15 0.002 0.006
F0.50 0.75 0.020 0.030
G0.65 BSC 0.026 BSC
H0.50 0.60 0.020 0.024
J0.09 0.20 0.004 0.008
J1 0.09 0.16 0.004 0.006
K0.19 0.30 0.007 0.012
K1 0.19 0.25 0.007 0.010
L6.40 BSC 0.252 BSC
M0 8 0 8
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
MOLD FLASH OR GATE BURRS SHALL NOT
EXCEED 0.15 (0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE
INTERLEAD FLASH OR PROTRUSION.
INTERLEAD FLASH OR PROTRUSION SHALL
NOT EXCEED 0.25 (0.010) PER SIDE.
5. DIMENSION K DOES NOT INCLUDE
DAMBAR PROTRUSION. ALLOWABLE
DAMBAR PROTRUSION SHALL BE 0.08
(0.003) TOTAL IN EXCESS OF THE K
DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6. TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY.
7. DIMENSION A AND B ARE TO BE
DETERMINED AT DATUM PLANE −W−.
____
S
U0.15 (0.006) T
2X L/2
S
U
M
0.10 (0.004) V S
T
L−U−
SEATING
PLANE
0.10 (0.004)
−T−
ÇÇÇ
ÇÇÇ
SECTION N−N
DETAIL E
JJ1
K
K1
ÉÉÉ
ÉÉÉ
DETAIL E
F
M
−W−
0.25 (0.010)
8
14
7
1
PIN 1
IDENT.
H
G
A
D
C
B
S
U0.15 (0.006) T
−V−
14X REFK
N
N
7.06
14X
0.36 14X
1.26
0.65
DIMENSIONS: MILLIMETERS
1
PITCH
SOLDERING FOOTPRINT*
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
74HC86
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8
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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Phone: 421 33 790 2910
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Phone: 81−3−5773−3850
74HC86/D
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