2SK3934
2009-09-29
1
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI)
2SK3934
Switching Regulator Applications
• Low drain-source ON resistance: RDS (ON) = 0.23 Ω (typ.)
• High forward transfer admittance: |Yfs| = 8.2 S (typ.)
• Low leakage current: IDSS = 100 μA (VDS = 500 V)
• Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Symbol Rating Unit
Drain-source voltage VDSS 500 V
Drain-gate voltage (RGS = 20 kΩ) VDGR 500 V
Gate-source voltage VGSS ±30 V
DC (Note 1) ID 15
Drain current Pulse (t = 1 ms)
(Note 1)
IDP 60
A
Drain power dissipation (Tc = 25°C) PD 50 W
Single pulse avalanche energy
(Note 2)
EAS 1.08 J
Avalanche current IAR 15 A
Repetitive avalanche energy (Note 3) EAR 5.0 mJ
Channel temperature Tch 150 °C
Storage temperature range Tstg -55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic Symbol Max Unit
Thermal resistance, channel to case Rth (ch-c) 2.5 °C/W
Thermal resistance, channel to ambient Rth (ch-a) 62.5 °C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 8.16mH, IAR = 15 A, RG = 25 Ω
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1
3
2
Unit: mm
JEDEC ―
JEITA SC-67
TOSHIBA 2-10U1B
Weight: 1.7 g (typ.)
1: Gate
2: Drain
3: Source
2SK3934
2009-09-29
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Electrical Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
Gate leakage current IGSS V
GS = ±25 V, VDS = 0 V ⎯ ⎯ ±10 μA
Gate-source breakdown voltage V (BR) GSS IG = ±10 μA, VDS = 0 V ±30 ⎯ ⎯ V
Drain cutoff current IDSS V
DS = 500 V, VGS = 0 V ⎯ ⎯ 100 μA
Drain-source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 500 ⎯ ⎯ V
Gate threshold voltage Vth V
DS = 10 V, ID = 1 mA 2.0 ⎯ 4.0 V
Drain-source ON resistance RDS (ON) V
GS = 10 V, ID = 7.5 A ⎯ 0.23 0.3 Ω
Forward transfer admittance ⎪Yfs⎪ V
DS = 10 V, ID = 7.5 A 2.3 8.2 ⎯ S
Input capacitance Ciss ⎯ 3100 ⎯
Reverse transfer capacitance Crss ⎯ 20 ⎯
Output capacitance Coss
VDS = 25 V, VGS = 0 V, f = 1 MHz
⎯ 270 ⎯
pF
Rise time tr ⎯ 70 ⎯
Turn-on time ton ⎯ 130 ⎯
Fall time tf ⎯ 70 ⎯
Switching time
Turn-off time toff
⎯ 280 ⎯
ns
Total gate charge Qg ⎯ 62 ⎯
Gate-source charge Qgs ⎯ 40 ⎯
Gate-drain charge Qgd
VDD
∼
−
400 V, VGS = 10 V, ID = 15 A
⎯ 22 ⎯
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
Continuous drain reverse current (Note 1) IDR ⎯ ⎯ ⎯ 15 A
Pulse drain reverse current (Note 1) IDRP ⎯ ⎯ ⎯ 60 A
Forward voltage (diode) VDSF I
DR = 15 A, VGS = 0 V ⎯ ⎯ −1.7
V
Reverse recovery time trr ⎯ 1.3 ⎯ μs
Reverse recovery charge Qrr
IDR = 15 A, VGS = 0 V,
dIDR/dt = 100 A/μs ⎯ 18 ⎯ μC
Marking
RL =26Ω
0 V
10 V
VGS
VDD
∼
−
200 V
ID = 7.5 A VOUT
50 Ω
Duty ≤ 1%, tw = 10 μs
Lot No.
Note 4
K3934
Part No. (or abbreviation code)
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
2SK3934
2009-09-29
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DRAIN CURRENT ID (A)
RDS (ON) – ID
DRAIN−SOURCE ON RESISTANCE
RDS (ON) (mΩ)
DRAIN−SOURCE VOLTAGE VDS (V)
ID – VDS
DRAIN CURRENT ID (A)
20
8
0
16
4
DRAIN
−
SOURCE VOLTAGE VDS (V)
ID – VDS
DRAIN CURRENT ID (A)
GATE−SOURCE VOLTAGE VGS (V)
ID – VGS
DRAIN CURRENT ID (A)
0
0 2 4 6 8 10
20
50
10V
30
40
10
GATE
−
SOURCE VOLTAGE VGS (V)
VDS – VGS
0
6
8
10
0 4 8 12 16 20
12
4
2
DRAIN CURRENT ID (A)
⎪Yfs⎪ – ID
FORWARD TRANSIENT ADMITTANCE
⎪Yfs⎪ (S)
10
1 10 100
100
1000
0.1
10
100
0.1 100 10
0 2 4 8
COMMON SOURCE
Tc = 25°C
PULSE TEST
10
40
30
20
10
0
50
0 8 20
COMMON SOURCE
Tc = 25°C
PULSE TEST
6.2V
7V
6.6V
16
12 4
VGS = 5V
8V
6.4V
5.8V
5.4V 6V
7V
7.5V
8V
6.5V
COMMON SOURCE
Tc = 25℃
PULSE TEST
ID = 15 A
ID = 7.5 A
ID = 3.8 A
VGS = 10 V
COMMON SOURCE
Tc = 25°C
PULSE TEST
Tc = −55°C
100
25
6
DRAIN−SOURCE VOLTAGE VDS (V)
COMMON SOURCE
VDS = 20 V
PULSE TEST
Tc = 25°C
Tc = 100°C Tc = −55°C
6V
6.8V
10V
VGS = 5 V
COMMON SOURCE
VDS = 20 V
PULSE TEST
1
1
2SK3934
2009-09-29
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DRAIN−SOURCE VOLTAGE VDS (V)
C – VDS
CAPACITANCE C (pF)
10
0.1
100
1000
10000
1 10 100
CASE TEMPERATURE Tc (°C)
RDS (ON) – Tc
DRAIN−SOURCE ON RESISTANCE
RDS (ON) (mΩ)
160 −40 0 40 80 120 −80
1000
800
600
400
200
0
TOTAL GATE CHARGE Qg (nC)
DYNAMIC INPUT/OUTPUT
CHARACTERISTICS
DRAIN−SOURCE VOLTAGE VDS (V)
GATE THRESHOLD VOLTAGE
Vth (V)
CASE TEMPERATURE Tc (°C)
Vth – Tc
0
1
2
3
5
−80 −40 0 40 80 120 160
4
DRAIN POWER DISSIPATION PD (W)
CASE TEMPERATURE Tc (°C)
PD – Tc
80
40
0
0 40 80 120 160
20
60
DRAIN
−
SOURCE VOLTAGE VDS (V)
IDR – VDS
DRAIN REVERSE CURRENT IDR (A)
0
0.1
1
10
100
−0.8 −1.2 −1.6−0.4
0 60
80 100
500
400
0
40
20
8
4
16
20
0
COMMON SOURCE
VGS = 10 V
PULSE TEST
ID = 15A
7.5
3.8
COMMON SOURCE
VDS = 10 V
ID = 1 mA
PULSE TEST
COMMON SOURCE
VGS = 0 V
f = 1 MHz
Tc = 25°C
Ciss
Coss
Crss
COMMON SOURCE
Tc = 25°C
PULSE TEST
5
3
1
VGS = 0 V
10
GATE−SOURCE VOLTAGE VGS (V)
VDS
VGS
VDD = 100 V
200V
400V
COMMON SOURCE
ID = 15 A
Tc = 25°C
PULSE TEST
12
300
200
100
2SK3934
2009-09-29
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−15 V
15 V
TEST CIRCUIT WAVEFORM
IAR
BVDSS
VDD V
DS
RG = 25 Ω
VDD = 90 V, L = 8.13 mH ⎟
⎟
⎠
⎞
⎜
⎜
⎝
⎛
−
⋅⋅⋅= VDD
BVDSS
BVDSS
2
IL
2
1
ΕAS
CHANNEL TEMPERATURE (INITIAL)
T
ch (°C)
EAS – Tch
AVALANCHE ENERGY EAS (mJ)
1200
1000
800
600
200
0
25 50 75 100 125 150
rth – tw
PULSE WIDTH tw (s)
NORMALIZED TRANSIENT THERMAL
IMPEDANCE rth (t)/Rth (ch-c)
0.01
10μ
0.1
1
10
100μ 1ｍ 10ｍ100ｍ1 10
0.001
DRAIN−SOURCE VOLTAGE VDS (V)
SAFE OPERATING AREA
DRAIN CURRENT ID (A)
0.1
1
1
10
100
10 1000
100
0.01
Duty=0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
*SINGLE NONREPETITIVE PULSE
Tc = 25°C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE IN
TEMPERATURE
DC OPERATION
Tc = 25°C
1 ms *
VDSS max
ID max (CONTINUOUS) *
ID max (PULSED) *
100 μs *
T
PDM
t
Duty = t/T
Rth (ch-c) = 2.5°C/W
400
2SK3934
2009-09-29
6
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
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responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must
also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document,
the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA
Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are
solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the
appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any
information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other
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equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
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• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.
