© 2001 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
IXFK IXFN
VDSS TJ= 25°C to 150°C 300 300 V
VDGR TJ= 25°C to 150°C; RGS = 1 MΩ300 300 V
VGS Continuous ±20 ±20 V
VGSM Transient ± 3 0 ± 3 0 V
ID25 TC= 25°C 73 73 A
IDM TC= 25°C, pulse width limited by TJM 292 292 A
IAR TC= 25°C 40 40 A
EAR TC= 25°C 30 30 mJ
dv/dt IS≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, 5 5 V/ns
TJ≤ 150°C, RG = 2 W
PDTC= 25°C 500 520 W
TJ-55 ... +150 ° C
TJM 150 ° C
Tstg -55 ... +150 ° C
TL1.6 mm (0.063 in) from case for 10 s 300 - ° C
VISOL 50/60 Hz, RMS t = 1 min - 2500 V~
IISOL ≤ 1 mA t = 1 s - 3000 V~
MdMounting torque 0.9/6 1.5/13 Nm/lb.in.
Terminal connection torque - 1.5/13 Nm/lb.in.
Weight 10 30 g
HiPerFETTM
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low trr
Features
lInternational standard packages
lJEDEC TO-264 AA, epoxy meet
UL 94 V-0, flammability classification
lminiBLOC with Aluminium nitride
isolation
lLow RDS (on) HDMOSTM process
lRugged polysilicon gate cell structure
lUnclamped Inductive Switching (UIS)
rated
lLow package inductance
lFast intrinsic Rectifier
Applications
lDC-DC converters
lSynchronous rectification
lBattery chargers
lSwitched-mode and resonant-mode
power supplies
lDC choppers
lTemperature and lighting controls
lLow voltage relays
Advantages
lEasy to mount
lSpace savings
lHigh power density
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS VGS = 0 V, ID = 1 mA 300 V
VGS(th) VDS = VGS, ID = 8 mA 2 4 V
IGSS VGS = ±20 VDC, VDS = 0 ±200 nA
IDSS VDS = 0.8 VDSS TJ = 25°C 400 uA
VGS = 0 V TJ = 125°C 2 mA
RDS(on) VGS = 10 V, ID = 0.5 ID25 45 mΩ
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
TO-264 AA (IXFK)TO-264 AA (IXFK)
TO-264 AA (IXFK)TO-264 AA (IXFK)
TO-264 AA (IXFK)
S
GD
G = Gate D = Drain
S = Source TAB = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
S
G
S
D
92805J (11/01)
miniBLOC, SOT-227 B (IXFN)miniBLOC, SOT-227 B (IXFN)
miniBLOC, SOT-227 B (IXFN)miniBLOC, SOT-227 B (IXFN)
miniBLOC, SOT-227 B (IXFN)
E153432 E153432
E153432 E153432
E153432
(TAB)
VDSS ID25 RDS(on)
IXFK 73 N 30 300 V 73 A 45 mΩΩ
ΩΩ
Ω
IXFN 73 N 30 300 V 73 A 45 mΩΩ
ΩΩ
Ω
trr ≤≤
≤≤
≤ 200 ns
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFK 73N30
IXFN 73N30
TO-264 AA Outline
Millimeter Inches
Min. Max. Min. Max.
A 4.82 5.13 .190 .202
A1 2.54 2.89 .100 .114
A2 2.00 2.10 .079 .083
b 1.12 1.42 .044 .056
b1 2.39 2.69 .094 .106
b2 2.90 3.09 .114 .122
c 0.53 0.83 .021 .033
D 25.91 26.16 1.020 1.030
E 19.81 19.96 .780 .786
e 5.46 BSC .215 BSC
J 0.00 0.25 .000 .010
K 0.00 0.25 .000 .010
L 20.32 20.83 .800 .820
L1 2.29 2.59 .090 .102
P 3.17 3.66 .125 .144
Q 6.07 6.27 .239 .247
Q1 8.38 8.69 .330 .342
R 3.81 4.32 .150 .170
R1 1.78 2.29 .070 .090
S 6.04 6.30 .238 .248
T 1.57 1.83 .062 .072
Dim.
miniBLOC, SOT-227 B
M4 screws (4x) supplied
Dim. Millimeter Inches
Min. Max. Min. Max.
A 31.50 31.88 1.240 1.255
B 7.80 8.20 0.307 0.323
C 4.09 4.29 0.161 0.169
D 4.09 4.29 0.161 0.169
E 4.09 4.29 0.161 0.169
F 14.91 15.11 0.587 0.595
G 30.12 30.30 1.186 1.193
H 38.00 38.23 1.496 1.505
J 11.68 12.22 0.460 0.481
K 8.92 9.60 0.351 0.378
L 0.76 0.84 0.030 0.033
M 12.60 12.85 0.496 0.506
N 25.15 25.42 0.990 1.001
O 1.98 2.13 0.078 0.084
P 4.95 5.97 0.195 0.235
Q 26.54 26.90 1.045 1.059
R 3.94 4.42 0.155 0.174
S 4.72 4.85 0.186 0.191
T 24.59 25.07 0.968 0.987
U -0.05 0.1 -0.002 0.004
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs VDS = 10 V; ID = 0.5 ID25, pulse test 50 S
Ciss 9000 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 1500 pF
Crss 580 pF
td(on) 30 ns
trVGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 80 ns
td(off) RG = 1 Ω (External), 100 ns
tf50 ns
Qg(on) 360 nC
Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 60 nC
Qgd 180 nC
RthJC TO-264 AA 0.25 K/W
RthCK TO-264 AA 0.15 K/W
RthJC miniBLOC, SOT-227 B 0.24 K/W
RthCK miniBLOC, SOT-227 B 0.05 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
ISVGS = 0 V 73 A
ISM Repetitive; pulse width limited by TJM 292 A
VSD IF = 100 A, VGS = 0 V, 1.5 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr 200 ns
QRM IF = IS, -di/dt = 100 A/µs, VR = 100 V 2 µC
IRM 40 A
© 2001 IXYS All rights reserved
Fig. 1 Output Characteristics Fig. 2 Input Admittance
Fig. 5 Drain Current vs. Fig. 6 Temperature Dependence of
Case Temperature Breakdown and Threshold Voltage
Fig. 3 RDS(on) vs. Drain Current Fig. 4 Temperature Dependence
of Drain to Source Resistance
5V
TJ - Degrees C
-50 -25 0 25 50 75 100 125 150
BV/V
G(th)
- N orma l ize d
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
TC - Degrees C
-50-250 255075100125150
I
D
- Amperes
0
10
20
30
40
50
60
70
80
TJ - Degrees C
-50 -25 0 25 50 75 100 125 150
R
DS(on)
- Norm a lized
0.50
0.75
1.00
1.25
1.50
1.75
2.00
2.25
2.50
ID - Amperes
0 40 80 120 160 200 240
R
DS(on)
- Norm a lized
0.8
1.0
1.2
1.4
1.6
1.8
2.0
VGS - V olts
012345678910
I
D
- Amperes
0
20
40
60
80
100
120
140
160
8V
7V
6V
ID = 40A
VGS(th) BVDSS
VGS = 10V
VGS = 1 0V
VGS = 15V
VDS - Volts
02468101214
I
D
- Amperes
0
20
40
60
80
100
120
140
160
TJ = 25°C
TJ = 25°C
TJ = 25° C
IXFK 73N30IXFK 73N30
IXFK 73N30IXFK 73N30
IXFK 73N30
IXFN 73N30IXFN 73N30
IXFN 73N30IXFN 73N30
IXFN 73N30
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFK 73N30
IXFN 73N30
Fig.10 Transient Thermal Impedance
Time - Seconds
0.001 0.01 0.1 1
Thermal Response - K/W
0.01
0.1
VDS - Volts
0 5 10 15 20 25
Capa citance - pF
0
1000
2000
3000
4000
5000
6000
7000
8000
9000
10000
Crss
VSD - Volts
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
I
D
- Am p er es
0
20
40
60
80
100
120
140
160
Gate Charge - nCoulombs
0 50 100 150 200 250 300 350 400
V
GE
- Volts
0
2
4
6
8
10
Coss
VDS = 150V
ID = 42A
IG = 10mA
TJ = 125°C
Ciss
f = 1MHz
VDS = 25V
TJ = 25°C
Fig.7 Gate Charge Characteristic Curve Fig.8 Capacitance Curves
Fig.9 Source Current vs. Source
to Drain Voltage
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evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
