LITE-ON SEMICONDUCTOR MBR6030PT thru 6060PT REVERSE VOLTAGE - 30 to 60 Volts FORWARD CURRENT - 60 Amperes SCHOTTKY BARRIER RECTIFIERS TO-3P FEATURES Metal of silicon rectifier,majority carrier conducton Guard ring for transient protection Low power loss, high efficiency High current capability, low VF High surge capacity Plastic package has UL flammability classification 94V-0 For use in low voltage,high frequency inverters,free whelling,and polarity protection applications F E A P G Q O K PIN 2 1 B 3 D H C I MECHANICAL DATA Case : TO-3P molded plastic Polarity : As marked on the body Weight : 0.2 ounces, 5.6 grams Mounting position : Any Max. mounting torque = 0.5 N.m (5.1 Kgf.cm) N J L M L PIN 1 PIN 2 CASE PIN 3 TO-3P DIM. MIN. MAX. A 15.75 16.25 21.25 21.75 B C 19.60 20.10 3.78 4.38 D 1.88 2.08 E 4.87 5.13 F G 4.4TYP. H 1.90 2.16 2.93 3.22 I J 1.22 1.12 K 2.90 3.20 5.20 5.70 L 2.10 2.40 M N 0.76 0.51 O 2.18 1.93 P 20 TYP Q 10 TYP All Dimensions in millimeter MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20% SYMBOL CHARACTERISTICS Maximum Recurrent Peak Reverse Voltage VRRM VRMS VDC MBR 6030PT 30 21 30 MBR 6035PT 35 24.5 35 MBR 6040PT 40 28 40 MBR 6045PT 45 31.5 45 MBR 6050PT 50 35 50 MBR 6060PT 60 42 60 UNIT V V V Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current (See Fig.1) @TC=125 C I(AV) 60 A Peak Forward Surge Current 8.3ms single half sine-wave @TA=25 C IFSM 400 A Maximum Forward Voltage (Note 1) IF =30A @ TJ =25 C IF =30A @ TJ =125 C IF =60A @ TJ =25 C Maximum DC Reverse Current at Rated DC Blocking Voltage @TJ =25 C @TJ =100 C Typical Thermal Resistance (Note 2) Typical Junction Capacitance per element (Note 3) Operating Temperature Range Storage Temperature Range VF 0.62 0.55 0.75 0.72 0.65 0.85 V IR 1.0 50 mA R0JC 1.0 C/W CJ 700 550 pF TJ -55 to +150 C TSTG -55 to +175 C NOTES : 1. 300us Pulse Width duty cycle 2%. 2. Thermal Resistance Junction to Case. 3. Measured at 1.0MHz and Applied Reverse Voltage of 4.0V DC. REV. 5, Aug-2007, KTHD14 AVERAGE FORWARD CURRENT AMPERES FIG.1 - FORWARD CURRENT DERATING CURVE 80 60 40 20 RESISTIVE OR INDUCTIVE LOAD 0 25 50 75 100 125 150 PEAK FORWARD SURGE CURRENT, AMPERES RATING AND CHARACTERISTIC CURVES MBR6030PT thru MBR6060PT FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT 500 400 300 200 150 100 8.3ms Single Half-Sine-Wave 1 175 2 5 CASE TEMPERATURE , C FIG.3 - TYPICAL REVERSE CHARACTERISTICS 50 100 FIG.4 - TYPICAL FORWARD CHARACTERISTICS 100 INSTANTANEOUS FORWARD CURRENT ,(A) 100 10 1.0 TJ = 100 C 0.1 TJ = 25 C 0.01 MBR6030PT~MBR6045PT TJ = 25 MBR6050PT~MBR6060PT 10 TJ = 25 1.0 PULSE WIDTH 300us 0.1 0 20 40 60 80 100 140 120 0.1 0.2 0.3 0.4 FIG.5 - TYPICAL JUNCTION CAPACITANCE 10000 1000 MBR6030PT~MBR6040PT MBR6050PT~MBR6060PT TJ = 25, f= 1MHz 100 0.1 1 0.5 0.6 0.7 0.8 0.9 INSTANTANEOUS FORWARD VOLTAGE , VOLTS PERCENT OF RATED PEAK REVERSE VOLTAGE, % CAPACITANCE , (pF) INSTANTANEOUS REVERSE CURRENT ,(mA) 20 10 NUMBER OF CYCLES AT 60Hz 4 10 REVERSE VOLTAGE , VOLTS 100 1.0