MBR6030PT thru 6060PT
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
℃
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
FEATURES
Metal of silicon rectifier,majority carrier conducton
Guard ring for transient protection
Low power loss, high efficiency
High current capability, low VF
High surge capacity
Plastic package has UL flammability classification
94V-0
For use in low voltage,high frequency inverters,free
whelling,and polarity protection applications
MECHANICAL DATA
Case : TO-3P molded plastic
Polarity : As marked on the body
Weight : 0.2 ounces, 5.6 grams
Mounting position : Any
Max. mounting torque = 0.5 N.m (5.1 Kgf.cm)
V
RMS
V
DC
V
RRM
I
(AV)
I
FSM
V
F
Maximum Average Forward
Rectified Current (See Fig.1)
@T
C
=
125 C
Peak Forward Surge Current
8.3ms single half sine-wave
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Forward
Voltage (Note 1)
60
400
0.62
T
J
Operating Temperature Range
-55 to +150
C
T
STG
Storage Temperature Range
-55 to +175
C
Typical Thermal Resistance (Note 2)
1.0
C/W
T
J
=25 C
C
J
Typical Junction Capacitance
per element
(Note 3)
700
pF
I
R
@T
J
=100 C
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@T
J
=25 C
50
mA
A
A
V
UNIT
V
V
CHARACTERISTICS SYMBOL
T
J
=125 C
R
0JC
I
F
=30A @
I
F
=30A @
I
F
=60A @
MBR
6030PT
30
21
30
MBR
6035PT
35
24.5
35
MBR
6040PT
40
28
40
MBR
6045PT
45
31.5
45
V
NOTES : 1. 300us Pulse Width duty cycle 2%.
2. Thermal Resistance Junction to Case.
3. Measured at 1.0MHz and Applied Reverse Voltage of 4.0V DC.
0.75
1.0
T
J
=25 C
0.55
TO-3P
PIN 1
PIN 3
PIN 2
CASE
E
L
Q
P
N
M
F
C
B
A
O
K
J
I
H
G
D
L
PIN
123
SCHOTTKY BARRIER RECTIFIERS
REVERSE VOLTAGE
- 30
to
60
Volts
FORWARD CURRENT
- 60
Amperes
All Dimensions in millimeter
DIM.
A
C
D
E
F
G
B
M
L
K
J
I
H
O
P
N
Q
TO-3P
MIN. MAX.
15.75 16.25
21.7521.25
19.60 20.10
4.38 3.78
1.88 2.08
4.87 5.13
1.90 2.16
1.22
1.12
2.90 3.20
5.20 5.70
2.10 2.40
0.76
0.51
2.93 3.22
1.93 2.18
20 TYP
4.4TYP.
10 TYP
SEMICONDUCTOR
LITE-ON
REV. 5, Aug-2007, KTHD14
MBR
6050PT
50
35
50
MBR
6060PT
60
42
60
0.72
0.85
0.65
550
@T
A
=
25 C
RATING AND CHARACTERISTIC CURVES
MBR6030PT thru MBR6060PT
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT ,(A)
0.2 0.3 0.7 0.8
1.0
10
100
0.4 0.5 0.6
0.1
1.0
0.9
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
0.1
1.0
10
100
0.1
PULSE WIDTH 300us
T
J
= 25
℃
PERCENT OF RATED PEAK REVERSE VOLTAGE, %
FIG.3 - TYPICAL REVERSE CHARACTERISTICS
INSTANTANEOUS
REVERSE CURRENT ,(mA)
20 40 120 140
0
0.01
1.0
100
10
60 80 100
0.1
T
J
= 100 C
T
J
= 25 C
FIG.5 - TYPICAL JUNCTION CAPACITANCE
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
NUMBER OF CYCLES AT 60Hz
PEAK FORWARD SURGE CURRENT,
AMPERES
15 10 50 100
220
100
150
200
300
400
500
FIG.1 - FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT
AMPERES
25 75 100 125 150
20
0
50
80
175
8.3ms Single Half-Sine-Wave
60
0
40
RESISTIVE OR
INDUCTIVE LOAD
CASE TEMPERATURE , C
T
J
= 25
℃
CAPACITANCE , (pF)
REVERSE VOLTAGE , VOLTS
10
1100
10000
1000
100
0.1 4
T
J
= 25 , f= 1MHz
℃
MBR6050PT~MBR6060PT
MBR6030PT~MBR6040PT
MBR6030PT~MBR6045PT
MBR6050PT~MBR6060PT