NTR4502P, NVTR4502P Power MOSFET -30 V, -1.95 A, Single, P-Channel, SOT-23 Features * * * * * http://onsemi.com Leading Planar Technology for Low Gate Charge / Fast Switching Low RDS(ON) for Low Conduction Losses SOT-23 Surface Mount for Small Footprint (3 X 3 mm) AEC Q101 Qualified - NVTR4502P These Devices are Pb-Free and are RoHS Compliant V(BR)DSS -30 V -1.95 A 240 mW @ -4.5 V P-Channel MOSFET S Applications * * * * ID Max (Note 1) RDS(on) TYP 155 mW @ -10 V DC to DC Conversion Load/Power Switch for Portables and Computing Motherboard, Notebooks, Camcorders, Digital Camera's, etc. Battery Charging Circuits G MAXIMUM RATINGS (TJ = 25C unless otherwise stated) Parameter D Symbol Value Unit Drain-to-Source Voltage VDSS -30 V Gate-to-Source Voltage VGS 20 V MARKING DIAGRAM/ PIN ASSIGNMENT ID -1.95 A Drain 3 Drain Current (Note 1) t < 10 s TA = 25C TA = 70C Power Dissipation (Note 1) t < 10 s Continuous Drain Current (Note 1) Steady State Power Dissipation (Note 1) Pulsed Drain Current TA = 25C -1.56 PD 1.25 W ID -1.13 A TA = 70C -0.90 TR2 M G 2 Source 1 Gate = Device Code = Date Code* = Pb-Free Package Steady State PD 0.4 W tp = 10 ms IDM -6.8 A (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. Operating Junction and Storage Temperature TJ, TSTG -55 to 150 C Source Current (Body Diode) IS -1.25 A Lead Temperature for Soldering Purposes (1/8 in from case for 10 s) TL 260 C Parameter Symbol Max Unit Junction-to-Ambient - Steady State (Note 1) RqJA 300 C/W Junction-to-Ambient - t = 10 s (Note 1) RqJA 100 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface-mounted on FR4 board using 1 in sq. pad size (Cu area = 1.127 in sq. [1 oz] including traces). (c) Semiconductor Components Industries, LLC, 2011 ORDERING INFORMATION Device THERMAL RESISTANCE RATINGS August, 2011 - Rev. 5 TR2 M G G SOT-23 CASE 318 STYLE 21 1 Package Shipping NTR4502PT1G SOT-23 (Pb-Free) 3000 / Tape & Reel NVTR4502PT1G SOT-23 (Pb-Free) 3000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NTR4502P/D NTR4502P, NVTR4502P Electrical Characteristics (TJ = 25C unless otherwise specified) Parameter Symbol Test Condition Min V(BR)DSS VGS = 0 V, ID = -250 mA -30 Typ Max Unit OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-to-Source Leakage Current IDSS VGS = 0 V, VDS = -30 V V TJ = 25C -1 TJ = 55C -10 IGSS VDS = 0 V, VGS = 20 V Gate Threshold Voltage VGS(TH) VGS = VDS, ID = -250 mA Drain-to-Source On Resistance RDS(on) VGS = -10 V, ID = -1.95 A mA 100 nA -3.0 V 155 200 mW VGS = -4.5 V, ID = -1.5 A 240 350 gFS VDS = -10 V, ID=-1.25 A 3 S Input Capacitance CISS VGS = 0 V, f = 1 MHz, VDS = -15 V 200 pF Output Capacitance COSS 80 Reverse Transfer Capacitance CRSS 50 ON CHARACTERISTICS (Note 3) Forward Transconductance -1.0 CHARGES AND CAPACITANCES VGS = -10 V, VDS = -15 V; ID = -1.95 A 10 nC 5.2 10 ns 12 20 td(OFF) 19 35 tf 17.5 30 -1.2 Total Gate Charge QG(TOT) 6 Threshold Gate Charge QG(TH) 0.3 Gate-to-Source Charge QGS 1 Gate-to-Drain Charge QGD 1.7 SWITCHING CHARACTERISTICS (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(ON) tr VGS =-10 V, VDD = -15 V, ID = -1.95 A, RG = 6 W DRAIN-SOURCE DIODE CHARACTERISTICS (Note 3) Forward Diode Voltage VSD VGS = 0 V, IS = -1.25 A -0.8 Reverse Recovery Time tRR VGS = 0 V, dISD/dt = 100 A/ms, IS = -1.25 A 23 2. Surface-mounted on FR4 board using 1 in sq. pad size (Cu area = 1.127 in sq. [1 oz] including traces). 3. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 V ns NTR4502P, NVTR4502P VGS = -4.0 V VGS = -5.0 V 4 VGS = -3.6 V VGS = -7.0 V 3 VGS = -3.4 V VGS = -10 V VGS = -3.2 V 2 VGS = -3.0 V 1 0 VGS = -2.8 V VGS = -2.6 V VGS = -2.4 V 0 1 2 3 4 5 6 7 8 9 VDS = -10 V 5 TJ = 25C VGS = -3.8 V -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) 5 TJ = 25C TJ = 100C 3 2 1 0 10 TJ = -55C 4 1 -VDS, DRAIN-TO-SOURCE VOLTAGE (V) 0.4 ID = -1.95 A TJ = 25C 0.3 0.25 0.2 0.15 0.1 3 4 5 6 7 8 9 10 -VGS, GATE-TO-SOURCE VOLTAGE (V) 5 6 7 TJ = 25C VGS = -4.5 V 0.25 0.2 VGS = -10 V 0.15 0.1 1 1.5 2 2.5 3 3.5 4 4.5 5 -ID, DRAIN CURRENT (A) Figure 4. On-Resistance versus Drain Current and Gate Voltage 1000 1.8 ID = -1.9 A VGS = -10 V 1.6 VGS = 0 V -IDSS, LEAKAGE (nA) RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 4 0.3 Figure 3. On-Resistance versus Gate-to-Source Voltage 1.4 1.2 1 0.8 0.6 -50 3 Figure 2. Transfer Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) Figure 1. On-Region Characteristics 0.35 2 -VGS, GATE-TO-SOURCE VOLTAGE (V) TJ = 150C 100 10 TJ = 100C 1 -25 0 25 50 75 100 125 150 2 TJ, JUNCTION TEMPERATURE (C) 6 10 14 18 22 26 -VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current versus Voltage http://onsemi.com 3 30 NTR4502P, NVTR4502P 500 C, CAPACITANCE (pF) VDS = 0 V 400 CISS 300 CRSS TJ = 25C VGS = 0 V CISS 200 COSS 100 CRSS 0 10 5 0 5 10 15 20 25 30 -VGS -VDS GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (V) -VGS, GATE-TO-SOURCE VOLTAGE (V) 12 18 QT 10 15 8 12 9 6 QGS QGD 4 6 2 3 ID = -1.95 A TJ = 25C 0 0 0 1 2 3 4 5 6 -VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 7. Capacitance Variation 7 QG, TOTAL GATE CHARGE (nC) Figure 8. Gate-to-Source and Drain-to-Source Voltage versus Total Charge 100 3 VDS = -15 V ID = -1.95 V VGS = -10 V tf td(off) t, TIME (ns) -IS, SOURCE CURRENT TJ = 25C tr 10 td(on) 1 2.5 2 1.5 1 0.5 0 1 10 100 0.3 0.6 0.9 RG, GATE RESISTANCE (W) -VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation versus Gate Resistance Figure 10. Diode Forward Voltage versus Current http://onsemi.com 4 1.2 NTR4502P, NVTR4502P PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE AP D SEE VIEW C 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. HE E DIM A A1 b c D E e L L1 HE q c 1 2 e b 0.25 q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 0 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 --- 10 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 0 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 --- MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 10 STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN L1 VIEW C SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. 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American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 http://onsemi.com 5 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NTR4502P/D