2N3906 2N3906 Si-Epitaxial-Planar Switching Transistors Si-Epitaxial-Planar Schalttransistoren PNP PNP Version 2006-09-12 Power dissipation Verlustleistung 18 9 16 CBE 2 x 2.54 Dimensions - Mae [mm] 625 mW Plastic case Kunststoffgehause TO-92 (10D3) Weight approx. - Gewicht ca. 0.18 g Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack Maximum ratings (TA = 25C) Grenzwerte (TA = 25C) 2N3906 Collector-Emitter-volt. - Kollektor-Emitter-Spannung B open - VCEO 40 V Collector-Base-voltage - Kollektor-Basis-Spannung E open - VCBO 40 V Emitter-Base-voltage - Emitter-Basis-Spannung C open - VEBO 5V Power dissipation - Verlustleistung Ptot 625 mW 1) Collector current - Kollektorstrom (dc) - IC 200 mA Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur Tj TS -55...+150C -55...+150C Characteristics (Tj = 25C) Kennwerte (Tj = 25C) Min. Typ. Max. 60 80 100 60 30 - - - - - - - 300 - - - - - - 0.25 V 0.40 V 0.65 V - - - 0.85 V 0.95 V DC current gain - Kollektor-Basis-Stromverhaltnis 2) - IC IC IC IC IC = = = = = 0.1 mA, 1 mA, 10 mA, 50 mA, 100 mA, - VCE VCE VCE VCE VCE = = = = = 1 1 1 1 1 V V V V V hFE hFE hFE hFE hFE Collector-Emitter saturation voltage - Kollektor-Emitter-Sattigungsspg. 2) - IC = 10 mA, - IB = 1 mA - IC = 50 mA, - IB = 5 mA - VCEsat - VCEsat Base-Emitter saturation voltage - Basis-Emitter-Sattigungsspannung 2) - IC = 10 mA, - IB = 1 mA - IC = 50 mA, - IB = 5 mA 1 2 - VBEsat - VBEsat Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschluss Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% (c) Diotec Semiconductor AG http://www.diotec.com/ 1 2N3906 Characteristics (Tj = 25C) Kennwerte (Tj = 25C) Min. Typ. Max. - ICBX - - 50 nA - IEBV - -- 50 nA fT 250 MHz - - CCBO - - 4.5 pF CEBO - - 10 pf F - - 4 dB - VCC = 3 V, - VBE = 0.5 V - IC = 10 mA, - IB1 = 1mA td - - 35 ns tr - - 35 ns - VCC = 3 V, - IC = 10 mA, - IB1 = - IB2 = 1 mA ts - - 225 ns tf - - 75 ns Collector-Emitter cutoff current - Kollektor-Emitter-Reststrom - VCE = 30 V, - VEB = 3 V Emitter-Base cutoff current - Emitter-Basis-Reststrom - VCE = 30 V, - VEB = 3 V Gain-Bandwidth Product - Transitfrequenz - IC = 10 mA, - VCE = 20 V, f = 100 MHz Collector-Base Capacitance - Kollektor-Basis-Kapazitat - VCB = 5 V, IE = ie = 0, f = 1 MHz Emitter-Base Capacitance - Emitter-Basis-Kapazitat - VEB = 0.5 V, IC = ic = 0, f = 1 MHz Noise figure - Rauschzahl - VCE = 5 V, - IC = 100 A, RG = 1 k, f = 1 kHz Switching times - Schaltzeiten (between 10% and 90% levels) delay time rise time storage time fall time Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft Recommended complementary NPN transistors Empfohlene komplementare NPN-Transistoren 1 2 RthA < 200 K/W 1) 2N3904 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschluss http://www.diotec.com/ (c) Diotec Semiconductor AG