2N3906
2N3906
PNP Si-Epitaxial-Planar Switching Transistors
Si-Epitaxial-Pla nar Sc hal ttransistor en PNP
Version 2006-09-12
Dimensions - Maße [mm]
Power dissipation
Verlustleistung
625 mW
Plastic case
Kunststoffgehäuse
TO-92
(10D3)
Weight approx. – Gewicht ca. 0.18 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C)
2N3906
Collector-Emitter-volt. – Kollektor-Emitter-Spannung B open - VCEO 40 V
Collector-Base-voltage – Kollektor-Basis-Spannung E open - VCBO 40 V
Emitter-Base-voltage – Emitter-Basis-Spannung C open - VEBO 5 V
Power dissipation – Verlustleistung Ptot 625 mW 1)
Collector current – Kollektorstrom (dc) - IC200 mA
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-55...+150°C
-55…+150°C
Charact eris tics (T j = 25°C) Kennwerte (Tj = 25°C)
Min. Typ. Max.
DC current gain – Kollektor-Basis-Stromverhältnis 2)
- IC = 0.1 mA, - VCE = 1 V
- IC = 1 mA, - VCE = 1 V
- IC = 10 mA, - VCE = 1 V
- IC = 50 mA, - VCE = 1 V
- IC = 100 mA, - VCE = 1 V
hFE
hFE
hFE
hFE
hFE
60
80
100
60
30
–
–
–
–
–
–
–
300
–
–
Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg. 2)
- IC = 10 mA, - IB = 1 mA
- IC = 50 mA, - IB = 5 mA
- VCEsat
- VCEsat
–
–
–
–
0.25 V
0.40 V
Base-Emitter saturation voltage – Basis-Emitter-Sättigungsspannung 2)
- IC = 10 mA, - IB = 1 mA
- IC = 50 mA, - IB = 5 mA
- VBEsat
- VBEsat
0.65 V
–
–
–
0.85 V
0.95 V
1 Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
© Diotec Semiconductor AG http://www.diotec.com/ 1
16
18
9
2 x 2.54
CBE
2N3906
Charact eris tics (T j = 25°C) Kennwerte (Tj = 25°C)
Min. Typ. Max.
Collector-Emitter cutoff current – Kollektor-Emitter-Reststrom
- VCE = 30 V, - VEB = 3 V - ICBX – – 50 nA
Emitter-Base cutoff current – Emitter-Basis-Reststrom
- VCE = 30 V, - VEB = 3 V - IEBV – –- 50 nA
Gain-Bandwidth Product – Transitfrequenz
- IC = 10 mA, - VCE = 20 V, f = 100 MHz fT250 MHz – –
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- VCB = 5 V, IE = ie = 0, f = 1 MHz CCBO – – 4.5 pF
Emitter-Base Capacitance – Emitter-Basis-Kapazität
- VEB = 0.5 V, IC = ic = 0, f = 1 MHz CEBO – – 10 pf
Noise figure – Rauschzahl
- VCE = 5 V, - IC = 100 µA, RG = 1 kΩ, f = 1 kHz F – – 4 dB
Switching times – Schaltzeiten (between 10% and 90% levels)
delay time
rise time
- VCC = 3 V, - VBE = 0.5 V
- IC = 10 mA, - IB1 = 1mA
td– – 35 ns
tr– – 35 ns
storage time
fall time
- VCC = 3 V, - IC = 10 mA,
- IB1 = - IB2 = 1 mA
ts– – 225 ns
tf– – 75 ns
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft RthA < 200 K/W 1)
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren 2N3904
1 Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
2http://www.diotec.com/ © Diotec Semiconductor AG
