21 fo 1 egaP 00.3.veR 0030JE4700SD80R
Jan 9, 2013
PS2805C-1
PS2805C-4
PIN CONNECTION
(Top View)
1. Anode, Cathode
2. Cathode, Anode
3. Emitter
4. Collector
4 3
1 2
1 2 3 4 5 6 7 8
1615 1413 1211 10 9
Anode, Cathode
Cathode, Anode
Emitter
Collector
1. 3. 5. 7.
2. 4. 6. 8.
9. 11. 13. 15.
10. 12. 14. 16.
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
teehS ataD
PS2805C-1, PS2805C-4
HIGH ISOLATION VOLTAGE AC INPUT RESPONSE TYPE
SSOP PHOTOCOUPLER
DESCRIPTION
The PS2805C-1 and PS2805C-4 are optically coupled isolators containing a GaAs light emitting diode and an NPN
silicon phototransistor in a plastic SSOP for high density applications to realize an excellent cost performance.
This package has shield effect to cut off ambient light.
FEATURES
•High isolation voltage (BV = 2 500 Vr.m.s.)
•Small and thin package (4, 16-pin SSOP, Pin pitch 1.27 mm)
•High collector to emitter voltage (VCEO : 80 V)
•AC input response
•Ordering number of tape product: PS2805C-1-F3, PS2805C-4-F3
•Pb-Free product
•Safety standards
•UL approved: No. E72422
•CSA approved: No. CA 101391 (CA5A, CAN/CSA-C22.2 60065, 60950)
•BSI approved (BS EN 60065, BS EN 60950) (PS2805C-1 only)
•DIN EN 60747-5-5 (VDE 0884-5) approved (Option)
APPLICATIONS
•Programmable logic controllers
•OA equipment
•Measuring instruments
•Hybrid IC
R08DS0074EJ0300
Rev.3.00
Jan 9, 2013
<R>
<R>
A Business Partner of Renesas Electronics Corporation.
PS2805C-1, PS2805C-4e
R08DS0074EJ0300 Rev.3.00 Page 2 of 12
Jan 9, 2013
PACKAGE DIMENSIONS (UNIT: mm)
M
0.12
0.4±0.1
1.27
2.0±0.1
0.1±0.1
PS2805C-1 PS2805C-4
4.4
7.0±0.3
0.5±0.3
0.15+0.10
–0.05
4.4
7.0±0.3
0.5±0.3
0.15+0.10
–0.05
1.27
2.0
+0.3
–0.2
0.1±0.1
M
0.12
0.40
+0.10
–0.05
2.7±0.3
43
12
10.3±0.3
16 9
18
PHOTOCOUPLER CONSTRUCTION
Parameter Unit (MIN.)
Air Distance 4.5 mm
Outer Creepage Distance 4.5 mm
Inner Creepage Distance 2.5 mm
Isolation Distance 0.1 mm
<R>
A Business Partner of Renesas Electronics Corporation.
PS2805C-1, PS2805C-4e
R08DS0074EJ0300 Rev.3.00 Page 3 of 12
Jan 9, 2013
MARKING EXAMPLE
PS2805C-1
Made in Taiwan
Made in Japan
" " (Square)
:Made in Japan
Week Assembled
Year Assembled (Last 1 digit)
Last 2 numbers of type
No. : 5C
Assembly Lot
301
R5C
301
R5C
301
Company initial
PS2805C-4
Country Assembled
Assembly Lot
No. 1 pin
Mark
PS2805C-4
PS2805C-4
NL301
R
301
Year Assembled
(Last 1 Digit)
LN
Rank Code
In-house Code
(L: Pb-Free)
Week Assembled
<R>
A Business Partner of Renesas Electronics Corporation.
PS2805C-1, PS2805C-4e
R08DS0074EJ0300 Rev.3.00 Page 4 of 12
Jan 9, 2013
ORDERING INFORMATION
Part Number Order Number Solder Plating
Specification Packing Style Safety Standards
Approval Application
Part Number*1
PS2805C- 1-F 3 PS2805C- 1-F 3- A Embossed T ap e 3
500 pcs/reel PS2805C-1
PS2805C- 4-F 3 PS2805C- 4-F 3- A Embossed T ap e 2
500 pcs/reel
Standard products
(UL, CSA, BSI approved)
PS2805C-4
PS2805C- 1- V-F 3 PS2805C- 1- V-F 3- A Embossed T ap e 3
500 pcs/reel PS2805C-1
PS2805C-4-V-F3 PS2805C-4-V-F3-A
Pb-Free
Embossed Tape 2
500 pcs/reel
DIN EN 60747-5-5
(VDE0884 -5)
Approved (Option) PS2805C-4
Note: *1. For the application of the Safety Standard, following part number should be used.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
Parameter Symbol Ratings Unit
PS2805C-1 PS2805C-4
Diode Forward Current (DC) IF ±30 mA/ch
Power Dissipation Derating
Δ
PD/°C 0.6 0.8 mW/°C
Power Dissipation PD60 80 mW/ch
Peak Forward Current *1 I
FP ±0.5 A/ch
Transistor Collector to Emitter Voltage VCEO 80 V
Emitter to Collector Voltage VECO 5 V
Collector Current IC30 mA/ch
Power Dissipation Derating
Δ
PC/°C 1.2 mW/°C
Power Dissipation PC120 mW/ch
Isolation Voltage *2 BV 2 500 Vr.m.s.
Operating Ambient Temperature TA −55 to +100 °C
Storage Temperature Tstg −55 to +150 °C
Notes: *1. PW = 100
μ
s, Duty Cycle = 1%
*2. AC voltage for 1 minute at TA = 25°C, RH = 60% between input and output.
Pins 1-2 shorted together, 3-4 shorted together (PS2805C-1).
Pins 1-8 shorted together, 9-16 shorted together (PS2805C-4).
<R>
A Business Partner of Renesas Electronics Corporation.
PS2805C-1, PS2805C-4e
R08DS0074EJ0300 Rev.3.00 Page 5 of 12
Jan 9, 2013
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Diode Forward Voltage VF I
F = ±5°mA 1.2 1.4 V
Terminal Capacitance Ct V = 0 V, f = 1.0 MHz 20 pF
Transistor Collector to Emitter
Dark Current ICEO V
CE = 80 V, IF = 0 mA 100 nA
Coupled Current Transfer Ratio
(IC/IF) *1 CTR IF = ±5 mA, VCE = 5 V 50 400 %
Collector Saturation
Voltage VCE (sat) I
F = ±10 mA, IC = 2 mA 0.13 0.3 V
Isolation Resistance RI-O V
I-O = 1.0 kVDC 1011 Ω
Isolation Capacitance CI-O V = 0 V, f = 1.0 MHz 0.4 pF
Rise Time *2 t
r V
CC = 5 V, IC = 2 mA, RL = 100 Ω5
μ
s
Fall Time *2 t
f7
Turn-on Time*2 t
on 10
Turn-off Time*2 t
off 7
Notes: *1. CTR rank
PS2805C-1
N : 50 to 400 (%)
M : 100 to 400 (%)
PS2805C-4
N : 50 to 400 (%)
M : 100 to 400 (%)
*2. Test circuit for switching time
Input
Output
90%
10%
t
r
t
d
t
f
t
s
t
on
t
off
PW = 100 s
Duty Cycle = 1/10
μ
V
CC
V
OUT
I
F
Pulse Input
R
L
= 100 Ω
50 Ω
<R>
<R>
A Business Partner of Renesas Electronics Corporation.
PS2805C-1, PS2805C-4e
R08DS0074EJ0300 Rev.3.00 Page 6 of 12
Jan 9, 2013
TYPICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified)
100
80
60
40
20
0
PS2805C-1
PS2805C-4
0.8 mW/°C
0.6 mW/°C
0 25 50 75 100 125
Ambient Temperature T
A
(°C)
Diode Power Dissipation P
D
(mW)
DIODE POWER DISSIPATION vs.
AMBIENT TEMPERATURE
200
160
120
80
40
0
PS2805C-1
PS2805C-4
1.2 mW/°C
0 25 50 75 100 125
Ambient Temperature T
A
(°C)
Transistor Power Dissipation P
C
(mW)
TRANSISTOR POWER DISSIPATION
vs. AMBIENT TEMPERATURE
100
1.51.41.31.21.11.00.90.80.7
50
10
5
1
0.5
0.1
0
°
C
–25
°
C
–55
°
C
+60
°
C
+25
°
C
T
A
= +100
°
C
0.05
Forward Voltage V
F
(V)
Forward Current I
F
(mA)
FORWARD CURRENT vs.
FORWARD VOLTAGE
30
25
20
15
10
5
00246810
I
F
= 10 mA
5 mA
2 mA
1 mA
Collector to Emitter Voltage V
CE
(V)
Collector Current I
C
(mA)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
Ambient Temperature T
A
(°C)
Collector to Emitter Dark Current I
CEO
(nA)
COLLECTOR TO EMITTER DARK
CURRENT vs. AMBIENT TEMPERATURE
10 000
1 000
100
10
10 25 50 75 100
24 V
70 V
V
CE
= 80 V
Collector Saturation Voltage V
CE(sat)
(V)
Collector Current I
C
(mA)
COLLECTOR CURRENT vs.
COLLECTOR SATURATION VOLTAGE
10
1
0.10 0.2 0.4 0.6 0.8 1.0
I
F
= 10 mA
5 mA
2 mA
1 mA
CTR = 200% CTR = 250%
CTR = 250%
Remark The graphs indicate nominal characteristics.
<R>
A Business Partner of Renesas Electronics Corporation.
PS2805C-1, PS2805C-4e
R08DS0074EJ0300 Rev.3.00 Page 7 of 12
Jan 9, 2013
100
10
1
0.1
10 100 1 000 10 000
tf
tr
td
ts
I
C
= 2 mA, V
CC
= 5 V,
CTR = 228%
Switching Time t ( s)
μ
Load Resistance RL (Ω)
SWITCHING TIME vs.
LOAD RESISTANCE
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
–
50
–7
5
–
25 0 25 7550 100
Ambient Temperature T
A (°C)
Normalized Current Transfer Ratio CTR
NORMALIZED CURRENT TRANSFER
RATIO vs. AMBIENT TEMPERATURE
Normalized to 1.0
at TA = 25°C,
IF = 5 mA, VCE = 5 V
CTR = 250%
80%
400
300
200
100
0
0.01 0.1 1 10 100
V
CE
= 5 V,
n = 3
Forward Current I
F (mA)
Current Transfer Ratio CTR (%)
CURRENT TRANSFER RATIO vs.
FORWARD CURRENT
Sample A
B
C
0.1 1 10 100 1 000
R
L
= 1 kΩ
300 Ω
100 Ω
I
F
= 5 mA,
V
CE
= 5 V
5
0
–
5
–
10
–
15
–
20
–
25
FREQUENCY RESPONSE
Frequency f (kHz)
Normalized Gain Gv
1 000
100
10
11 10 100
t
d
t
s
tf
I
F
= 5 mA, V
CC
= 5 V,
CTR = 228%
tr
Load Resistance RL (kΩ)
SWITCHING TIME vs.
LOAD RESISTANCE
Switching Time t ( s)
μ
Remark The graphs indicate nominal characteristics.
A Business Partner of Renesas Electronics Corporation.
PS2805C-1, PS2805C-4e
R08DS0074EJ0300 Rev.3.00 Page 8 of 12
Jan 9, 2013
TAPING SPECIFICATIONS (UNIT: mm)
Outline and Dimensions (Reel)
Packing: 3 500 pcs/reel
2.0±0.5
R 1.0
13.0±0.2
φ
21.0±0.8
φ
Tape Direction
PS2805C-1-F3
Outline and Dimensions (Tape)
1.55±0.1
4.0±0.1
2.0±0.1
4.0±0.1
1.75±0.1
2.8 MAX.
7.55±0.1
0.3
7.5±0.1
16.0±0.3
2.85±0.1 2.3±0.1
1.5
+0.1
–0
φ
330±2.0
φ
100±1.0
φ
2.0±0.5
15.9 to 19.4
Outer edge of
flange
21.5±1.0
17.5±1.0
301
R5C
301
R5C
301
R5C
301
R5C
301
R5C
<R>
A Business Partner of Renesas Electronics Corporation.
PS2805C-1, PS2805C-4e
R08DS0074EJ0300 Rev.3.00 Page 9 of 12
Jan 9, 2013
Tape Direction
PS2805C-4-F3
Outline and Dimensions (Reel)
Packing: 2 500 pcs/reel
2.0±0.5
R 1.0
13.0±0.2
φ
21.0±0.8
φ
Outline and Dimensions (Tape)
1.55±0.1
12.0±0.1
2.0±0.1
4.0±0.1
1.75±0.1
16.0±0.3
8.3±0.1
2.8 MAX.
10.7±0.1
0.3
2.3±0.1
7.5±0.1
1.5
+0.1
–0
φ
330±2.0
φ
100±1.0
φ
2.0±0.5
15.9 to 19.4
Outer edge of
flange
21.5±1.0
17.5±1.0
A Business Partner of Renesas Electronics Corporation.
PS2805C-1, PS2805C-4e
R08DS0074EJ0300 Rev.3.00 Page 10 of 12
Jan 9, 2013
NOTES ON HANDLING
1. Recommended so ldering condition s
(1) In frared reflow soldering
• Peak reflow temperature 260°C or below (package surface temperature)
• Time of p eak reflow temperature 10 seconds or less
• Time of temperature higher than 220°C 60 seconds or less
• Time to preheat temperature from 120 to 180°C 120±30 s
• Number of reflows Three
• Flux Rosin flux containing small amount of chlorine (The flux
with a maximum chlorine content of 0.2 Wt% is
recommended.)
120±30 s
(preheating)
220°C
180°C
Package Surface Temperature T (°C)
Time (s)
Recommended Temperature Profile of Infrared Reflow
(heating)
to 10 s
to 60 s
260°C MAX.
120°C
(2) Wave s olde rin g
• Temperature 260°C or below (molten solder temperature)
• Time 10 seconds or less
• Preheating conditions 120°C or below (package surface temperature)
• Number of times One (Allowed to be dipped in solder including plastic mold portion.)
• Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine
content of 0.2 Wt% is recommended.)
(3) Soldering by Soldering Iron
• Peak Temperature (lead part temperature) 350°C or below
• Time (each pins) 3 seconds or less
• Flux Rosin flux containing small amount of chlorine (The flux with a
maximum chlori ne co nt ent of 0.2 Wt% is recommended.)
(a) Soldering of leads should be made at the point 1.5 to 2.0 mm from the root of the lead
<R>
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PS2805C-1, PS2805C-4e
R08DS0074EJ0300 Rev.3.00 Page 11 of 12
Jan 9, 2013
(4) Cautions
• Fluxes Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent.
2. Cautions regarding noise
Be aware that when voltage is applied suddenly between the photocoupler’s input and output or between collector-
emitters at startup, the output transistor may enter the on state, even if the voltage is within the absolute maximum
ratings.
3. Measurement conditions of current transfer ratios (CTR), which differ according to photocoupler
Check the setting values before use, since the forward current conditions at CTR measurement differ according to
product.
When using products other than at the specified forward current, the characteristics curves may differ from the
standard curves due to CTR value variations or the like. This tendency may sometimes be obvious, especially below
IF = 1 mA.
Therefore, check the characteristics under the actual operating conditions and thoroughly take variations or the lik e
into consideration before use.
USAGE CAUTIONS
1. Protect against static electricity when handling.
2. Avoid storage at a high temperature and high humidity.
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PS2805C-1, PS2805C-4e
R08DS0074EJ0300 Rev.3.00 Page 12 of 12
Jan 9, 2013
SPECIFICATION OF VDE MARKS LICENSE DOCUMENT
Parameter Symbol Spec. Unit
Climatic test class (IEC 60068-1/DIN EN 60068-1) 55/100/21
Dielectric strength
maximum operating isolation voltage
Test voltage (partial discharge test, procedure a for type test and random test)
Upr = 1.6 × UIORM, Pd < 5 pC
UIORM
Upr 705
1 128 Vpeak
Vpeak
Test voltage (partial discharge test, procedure b for all devices)
Upr = 1.875 × UIORM, Pd < 5 pC Upr 1 322 Vpeak
Highest permissible overvoltage UTR 6 000 Vpeak
Degree of pollution (DIN EN 60664-1 VDE0110 Part 1) 2
Comparative tracking index (IEC 60112/DIN EN 60112 (VDE 0303 Part 11)) CTI 175
Material group (DIN EN 60664-1 VDE0110 Part 1) III a
Storage temperature range Tstg −55 to +150 °C
Operating temperature range TA −55 to +100 °C
Isolation resistance, minimum value
VIO = 500 V dc at TA = 25°C
VIO = 500 V dc at TA MAX. at least 100°C Ris MIN.
Ris MIN. 1012
1011
Ω
Ω
Safety maximum ratings (maximum permissible in case of fault, see thermal
derating curve)
Package temperature
Current (input current IF, Psi = 0)
Power (output or total power dissipation)
Isolation resistance
VIO = 500 V dc at TA = Tsi
Tsi
Isi
Psi
Ris MIN.
150
300
500
109
°C
mA
mW
Ω
<R>
<R>
<R>
A Business Partner of Renesas Electronics Corporation.
All trademarks and registered trademarks are t he property of their respective owners.
C - 1
Revision History PS2805C-1, PS2805C-4 Data Sheet
Description
Rev. Date Page Summary
1.00 May 30, 2006 − T his data sheet was released as PN10611EJ01V0DS
3.00 Jan 9, 2013 Throughout Renesas format is applied to this data sheet.
p.1 The ordering number and safety standards are revised.
p.2
PHOTOCOUPLER CONSTRUCTION is added as eac h distance of this
device.
p.3 The explanation in MARKING EXAMPLE is revised.
p.4
ORDERING INFORMATION is modified with the revision of the safety
standards.
p.5
Turn-on Time (ton) and Turn-off Time (toff) are added to the table in
ELECTRICAL CHARACTERISTICS.
p.6
The graph of DIODE POWER DISSIPATION vs. AMBIENT TEMPERATURE
and TRANSISTOR POWER DISSIPATION vs. AMBIENT TEMPERATURE
are revised
p.7 The graph of LONG TERM CTR DEGRADATION is deleted.
p.8 PS2805C-1-F4 is deleted form Tape Direction image in TAPING
SPECIFICATIONS.
p.9 PS2805C-4-F4 is deleted form Tape Direction image in TAPING
SPECIFICATIONS.
p.10
The note about temperature condition of the recommended soldering
conditions is deleted.
p.12
The values in SPECIFICATION OF VDE MARKS LICENSE DOCUMENT are
changed as follows.
-- Test voltage is changed from the factor, 1.5, and the valu e, 1058, to 1.6
and 1128, respectively.
-- Clearance distance is moved to PHOTOCOUPLER CONS TRUCTION with
changing 5.0 (min.) to 4.5 (min.).
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