90503TN (KT)/83198HA (KT)/6040TA (CQ) No.3578–1/4
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistors
High-Voltage Switching Applications
Ordering number:ENN3578
2SA1770/2SC4614
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
OBC 081)(V
egatloVrettimE-ot-rotcelloCV
OEC 061)(V
egatloVesaB-ot-rettimEV
OBE 6)(V
tnerruCrotcelloCI
C5.1)(A
)esluP(tnerruCrotelloCI
PC 5.2)(A
noitapissiDrotcelloCP
C1W
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55
( ) : 2SA1770
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Package Dimensions
unit:mm
2064A
[2SA1770/2SC4614]
Features
· Adoption of MBIT process.
· High breakdown voltage and large current capacity.
˚C
˚C
Electrical Characteristics at Ta = 25˚C
1 : Emitter
2 : Collector
3 : Base
SANYO : NMP
6.9
0.6
0.5
4.5
1.01.0
0.9
2.5
1.45 1.0
0.45
4.0 1.0
2.54
2.54
123
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nimpytxam
tnerruCffotuCrotcelloCI
OBC VBC I,V021)(= E0=1)(Aµ
tnerruCffotuCrettimEI
OBE VBE I,V4)(= C0=1)(Aµ
niaGtnerruCCD hEF 1V
EC I,V5)(= CAm001)(=*001*004
hEF 2V
EC I,V5)(= CAm01)(=08
tcudorPhtdiwdnaB-niaGf
TVEC I,V01)(= CAm05)(=021zHM
* ; The 2SA1770/2SC4614 are classified by 100mA hFE as follows : Continued on next page.
knaRRST
hEF 002ot001082ot041004ot002
2SA1770/2SC4614
No.3578–2/4
Switching Time Test Circuit
VR
RL
100V
--5V
IC=10IB1= --10IB2= 0.7A
++
50
INPUT OUTPUT
RB
100µF 470µF
PW=20µsIB1
D.C.1%
For PNP, the polarity is reversed.
IB2
--20mA
--10mA
--2mA
--5mA
--1mA
--40mA
--60mA
--80mA
ITR04572
--1.8
--1.6
--1.4
--1.2
--1.0
--0.8
--0.6
--0.4
--0.2
00 --2 --4 --5--1 --3
IC -- VCE 1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0024513
IB=0
2SA1770
ITR04571
20mA
10mA
5mA
2mA
1mA
30mA
40mA
50mA
IC -- VCE
IB=0
2SC4614
--1.0
--0.8
--0.6
--0.4
--0.2
2SA1770 2SC4614
IC -- VCE
IB=0
0.5mA
1.0mA
1.5mA
2.0mA
2.5mA
3.0
mA
3.5mA
4.0mA
4.5mA
5.0mA
ITR04574
00 --20 --50--10 --30 --40
IC -- VCE 1.0
0.8
0.6
0.4
0.2
0020 5010 30 40
--0.5mA
--2.5mA
--3.0mA
--3.5mA
--4.0mA
--4.5mA
--5.0mA
--1.0mA
IB=0
ITR04573
--2.0mA
--1.5mA
Collector Current, IC– A
Collector-to-Emitter Voltage, VCE –V
Collector Current, IC– A
Collector-to-Emitter Voltage, VCE –V
Collector Current, IC– A
Collector-to-Emitter Voltage, VCE –V
Collector Current, IC– A
Collector-to-Emitter Voltage, VCE –V
Continued from preceding page.
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nimpytxam
ecnaticapaCtuptuOC
bo VBC zHM1=f,V01)(=41)22(Fp
egatloVnoitarutaSrettimE-ot-rotcelloCV
)tas(EC ICI,Am005)(= BAm05)(= )002()005(Vm
031054Vm
egatloVnoitarutaSrettimE-ot-esaBV
)tas(EB ICI,Am005)(= BAm05)(=58.0)(2.1)(V
egatloVnwodkaerBesaB-ot-rotcelloCV
OBC)RB( ICI,Aµ01)(= E0=081)(V
egatloVnwodkaerBrettimE-ot-rotcelloCV
OEC)RB( ICR,Am1)(= EB =061)(V
egatloVnwodkaerBesaB-ot-rettimEV
OBE)RB( IEI,Aµ01)(= C0=6)(V
emiTNO-nruTt
no tiucriCtseTdeificepseeS04)04(sn
emiTegarotSt
gts tiucriCtseTdeificepseeS )7.0(sµ
2.1sµ
emiTllaFt
ftiucriCtseTdeificepseeS08)04(sn
2SA1770/2SC4614
No.3578–3/4
VCE(sat) -- IC
Ta=75°C
25°C
--25°C
2SC4614
IC / IB=10
--0.01 --0.1
23 5 23 577723
--1.0
--1000
7
5
3
3
2
2
7
5
3
2
--100
Ta=75°C
25°C
--25°C
VCE(sat) -- IC
ITR04581 0.01 0.1
23 5 23 577723
1.0
1000
7
5
3
3
2
2
7
5
3
2
100
ITR04582
2SA1770
IC / IB=10
Ta=75°C
--25°C
hFE -- IC2SA1770
VCE=--5V
2SA1770
VCE=--5V
ITR04577
100
7
1000
7
5
3
2
5
3
2
10
100
7
1000
7
5
3
2
5
3
2
10 0.01 325
0.1 325777777 32
1.0
5--1.0--0.01 325 32325
--0.1
hFE -- IC
Ta=75°C
--25°C
25°C
2SC4614
VCE=5V
ITR04578
Ta=75°C
25°C
--25°C
--1.6
--1.2
--0.8
--0.4
0
1.6
1.2
0.8
0.4
0
0 --0.2 --0.4 --0.6 --0.8 --1.2--1.0
IC -- VBE
ITR04575
2SC4614
VCE=5V
Ta=75°C
25°C
--25°C
0 0.2 0.4 0.6 0.8 1.21.0
IC -- VBE
ITR04576
25°C
Cob -- VCB
5
3
2
7
5
3
10
7
100
1.0 37 3210 27
100
55
ITR04580
2SA1770 / 2SC4614
(For PNP, minus sign is omitted.) (For PNP, minus sign is omitted.)
2SA1770 / 2SC4614
2SA1770
2SC4614
fT -- IC
3
100
10
2
5
7
5
3
2
72532 253
0.01 0.1 71.0
ITR04579
2SA1770
2SC4614
Base-to-Emitter Voltage, VBE V Base-to-Emitter Voltage, VBE –V
Collector Current, IC– A
Collector Current, IC– A
DC Current Gain, hFE
DC Current Gain, hFE
Collector Current, IC– A Collector Current, IC– A
Gain-Bandwidth Product, fT MHz
Collector Current, IC– A
Output Capacitance, Cob – pF
Collector-to-Base Voltage,VCB– V
Collector Current, IC– A
Collector-to-Emitter
Saturation Voltage, VCE(sat) – mV
Collector Current, IC– A
Collector-to-Emitter
Saturation Voltage, VCE(sat) – mV
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of September, 2003. Specifications and information herein are
subject to change without notice.
2SA1770/2SC4614
PS No.3578–4/4
A S O
1.0
0.1
5
7
7
7
5
3
2
3
2
5
3
3
2
0.01
5
1.0 10 23253757 100
2537
ICP=2.5A
10ms
100ms
DC operation
1ms
IC=1.5A
ITR04585
2SA1770 / 2SC4614 2SA1770 / 2SC4614
0
1.2
1.0
0.8
0.6
0.4
0.2
2006040 80 100 140120 160
PC -- Ta
ITR04586
VBE(sat) -- IC
--1.0
--10
--0.01 --0.1 --1.0
Ta=--25°C
75°C
7
5
3
2
7
5
323 5 23 577723
1.0
10
0.01 0.1 1.0
7
5
3
2
7
5
323 5 23 577723
2SA1770
IC / IB=10
ITR04583
25°C
VBE(sat) -- IC
Ta=--25°C
75°C
ITR04584
25°C
2SC4614
IC / IB=10
Collector Current, IC– A
Base-to-Emitter
Saturation Voltage, VBE(sat) –V
Collector Current, IC– A
Base-to-Emitter
Saturation Voltage, VBE(sat) –V
Collector-to-Emitter Voltage, VCE –V
Collector Current, IC– A
Ta=25°C
Single pulse
For PNP, minus sign is omitted.
Collector Dissipation, PC– W
Ambient Temperature, Ta ˚C