BRITISH STANDARDS INSTITUTION 2, PARK STREET, LONDON, W1A 2BS Specification available from: AS SHOWN IN PD 9002, and SEMELAB MANUFACTURING LTD., CECC 00200 10-12 BANK STREET, LUTTERWORTH, LEICESTERSHIRE. TELEPHONE (045 55) 4711 TELEX 341927 BS CECC 50 003- 013 - _ issue2 July 1981 Poge 1 of #0 pages ELECTRONIC COMPONENTS OF ASSESSED QUALITY DETAIL SPECIFICATION IN ACCORDANCE WITH BS CECC 50000;1977 Outline and dimensions Third angle projection dimensions in millimeters 9.15 B.bs an, 12.65 max 31.8 max 24.38 For detail dimensions see figure 3 Equivalent To JEDEC TO-66 Marking information see clause 3 MANUFACTURER'S TYPE NUMBER See PD 9002 and CECC 00200 2N4898 2N4899 2N4900 For ordering information see clause 5 CASE RATED MEDIUM POWER LOW FREQUENCY AMPLIFICATION BIPOLAR TRANSISTORS PNP SILICON EPITAXIAL BASE TRANSISTORS IN HERMETICALLY SEALED METAL CASE ASSESSMENT LEVEL F PLUS ADDITIONAL TESTS l. LIMITING VALUES (Absolute maximum system) Tease Operating case temperature stg Operating storage temperature range -Vego Maximum collector-base continuous (direct) voltage -Yeeg Waximum collector-emitter continuous (direct) voltage with zero base current -Vego Haximum emitter-base continuous (direct) reverse voltage -le Maximum collector current -Ig Maximum base current Prot Maximum total power dissipation Tease = 25C Win, Max. Units ~65 200 9 65 200 C 2N4898 - 40 V 2N4899 - 60 v 2N4900 - 80 v 2N4898 - 40 Vv 2N4899 - 60 v 2N4900 - 80 Vv - 5.0 v - 4.0 A - 1.0 A - 25 W (for derating curve und area of safe operation see figures 1 and 2) Refer to Qualified Products List PD 9002 or CECC 00200 for details of manufacturers approved to this specificationBS CECC 50 003-013 Issue 2. July 1981 2. CHARACTERISTICS T = 25C unless otherwise stated case PARAMETER AND TEST CONDITIONS MIN, MAX, UNITS h Static value of common-emitter forward current 21E transfer ratio Poe (1) Vee =1.0V lh = 0.5 At 20 100 . ho ye (2) Vee = 1.0 V ate = 1.0 A* 10 - - hoe (3) Vee =1.0V le = 0.05 A* 40 - - leo Collector-base cut-off current Veg = 40 V Ip =0 2N4898 - 0.1 mA Veg = 60 Vv -le = 0 2N4899 - 0.1 mA Vop = 80 Vv -l, =0 2N4900 - 0.1 mA wloey Collector-emitter cut-off current lcexaa) ce = 40 Vgg = 1.5 V 2N4898 - 100 uA Vee = 60 V Vee = 1.5 2N4899 - 100 uA Vee = 80 Vv Vee = 1.5 2N4900 - 100 pA ' eex(2) Vee = 40 Vv Vag = 1-5 V Tease = 150C 2N4898 - 1.0 mA Vee = 60 Vac = Ov Tease = 1506 2N4899 - 1.0 mA Voge = 80 V 5 Vere = 1.5 case = iso-c 2N4900 - 1.0 mA lees Collector-emitter leakage current Vee = 40 Vv Vee =-0 2N4898 - 100 vA Vee = 60 V Vee =0 2N4899 - 100 pA Vee = 80 Vv Vee = 0 2N4900 - 100 pA vlog Collector-emitter cut-off current Vee = 30 V ar = 0 ALL TYPES - 0.50 mA Fy Transition frequency Vor =10V whe = 250 mA f = 1.0 MHz 3.0 - MHz Veccat Collector-emitter saturation voltage -t, = 0.1 Ax wle = 1.0 A* - 0.60 Vv Vee t Base-emitter saturation voltage sa ar = 0.1 A* cle = 1.0 A* - 1.3 V Vee Base-emitter voltage Vog = 1.0V wle = 1.0 A* - 1.3 Vv Rth j-case Thermal resistance junction to case ~ 7.0 c/w *xMeasured under pulse conditions: pulse length = 300 ys, duty cycle = 2%on MARKING BS CECC 50 003-013 Issue2 July 1981 Each device shall bear the following marking: (a) Terminal identification (b) = Type number (c) Date code (d) Manufacturer's trade mark or factory identification code Each package containing one or more of these transistors shall bear the above markings b, c and d and in addition, this detail specification number BS CECC 50 003 - 013 Issue 2 dated July 1981. RELATED DOCUMENTS BS 2011/IEC 68 BS E9000/ CECC 00 100 to 00 113 BS 9007/CECC 00 007 BS/CECC 50 000 IEC 147-2 PD 9002/CECC 00 200 ORDERING INFORMATION Methods for the environmental testing of electronic components and electronic equipment. General requirements for electronic components of assessed quality. Sampling plans and procedures for inspection by attributes. Harmonised generic specification for discrete semiconductor devices. General principles of measuring methods. BS 9000 component selection guide, Orders for these transistors should contain the following minimum information: (a) The device type and this detail specification number. (b) The quantity required. (c) If required, screening sequence from Appendix VI of CECC 50000. (d) Level of quality assessment as defined in Appendix IIA of CECC 50000.BS CECC 50 003-013 TEST CONDITIONS AND INSPECTION REQUIREMENTS Issue 2 July 1981 GROUP A - LoT-BY-LoT Note:- All devices subjected to Test marked D0 shall not be accepted for release. (See 3.5.6 of BS CECC 50 000). 2. All tests are non-destructive unless indicated by 'D' EXAMINATION REF. CONDITIONS INSPECTION REQUIREMENTS BS oR LIMITS LEVEL CECC T case = 25C unless otherwise TEST stated F $0000 MIN, MAX. IL AQL SUBGROUP Al | 0.65% Visual inspection 4.2.1 SUBGROUP A2a I 0.15% Non-operatives Device considered to be open OPEN CIRCUIT circuit if Mote (\) <5 SHORT CIRCUIT Device considered to be short circuited if eBo(t) >10 mA SUBGROUP A2b i 0.65% Col lector-base 4.3.4 V.,2= 40 Vv -!. =0 2N4898 - 0.1 mA cut-off current T.001 cB E 1 . Veg = 60 V -I, = 0 2N4899 - 0.1 mA ceo(t) -V.p = 80V -I = 0 2N4900 - 0.1 mA cB E Collector-emitter 4.3.4 -V..= 40 V Vij. = 1.5 VV 2N4898 - 100 LA t-off current T.009 ce BE " orn cur . Veg = OO V Vee = 1.5 V 2NK899 - 100 pA cex(1) - = = - Vee = 80 Vv Vee = 1.5 V 2N4900 100 uA Collector-emitter 4.3.4 -V.. = 4ov Vo- = 0 2N4898 - 100 uA leak rrent T.009 ce BE jonage curre Vop = OO V Vy = 0 2N4899 - 100 uA ces(1) _ _ = - Vee = 80 V Vee = 0 2N4900 100 yA Collector-emitter 4.3.4 Vee = 30 V vty = 0 : 0.50 mA cut-off current T.009 CEO(1) Common~emi tter 4.3.4 Veg =1.0V wth = 0.5 AX 20 100 forward current T,.006 transfer ratio Mote (1) Base~emitter 4.3.4 Veg =1.0V wt = 1.0 A* - 1.3 voltage T.005 Vee Base-emitter 4.3.4 -l, = 90.1 Ax=I = 1.0 A* - 1.3V saturation voltage T.004 Veesat(1) Common-emi tter 4.3.4 Vee = 1.0 V we = 1.0 A* 10 - forward current T.006 transfer ratio M946 (2) SUBGROUP A3 { 2.5% Collector emitter 4.3.4 -l, = 0.1 Ax-1 = 1.0 A* - -0.60 V saturation voltage T.003 Veesat (1) Measured under pulse conditions: pulse length = 300 us, duty cycle = 2%on Note:- PAN EERE NEE BORE TARDE DRELES NEG OR We SAU YR tt TEST CONDITIONS AND INSPECTION REQUIREMENTS GROUP B- LotT-BY-LoT (See-3.5.6 of BS CECC 50 000). All_ tests are non-destructive unless indicated by 'D! All devices subjected to Test marked 0 shall not be accepted for release. BS CECC 500 3-013 Issue 2 July 1981 INSPECTION REQUIREMENTS EXAMINATION REF. CONDITIONS OR BS _ oe ; LIMITS LEVEL cecc Tease = 28 unless otherwise TEST F 50000 MIN. MAX. IL AQL wih mi SUBGROUP BI Uy - 32.17 s2 2.5% Dimensions 4.2.2 See fig. 3. U2 - 17.78 Appendix g 24,33 24.43 mt A - 8.65 SUBGROUP B3 $3 2.5% Lead bending pt 4.4.9 1EC 68-2-21 F= 10N No damage Test Ub Method | SUBGROUP B4 S4 2.5% Solderabi lity 4.4.7 IEC 68-2-20 Test T Good wetting SUBGROUP 85 S4 2.5% Change of halk IEC 68-2-14 o temperature Test Na - 65C to 200 C 5 cycles followed by Accelerated damp 4.4.2 1EC 68-2-4 heat "pt Test Da Method | 6 cycles Post-test end-points ~egoct) 13 Conditions as Subgroup A2b - 0.1 mA h 4.3.4 Conditions as Subgroup A2b 20 100 21E(1) T.006 SUBGROUP B% Sh 1.5% Electrical 4.5.2.3 High temperature reverse bias endurance Duration 168 hours T = 200C case Post-test end-points epoc1) 13-8 Conditions as Subgroup A2b - 0.2 mA h 4.3.4 Conditions as Subgroup A2b 16 120 21E (1) T.003 SUBGROUP CTR Attributes information for B3, B4, BS and 88 eBS CECC 50 003-013 TEST CONDITIONS AND INSPECTION REQUIREMENTS. Issue 2 July 1981 GROUP C - peRropic Note:- All devices subjected to Test marked D shat! not be accepted for release. (See 3.5.6 of BS CECC 50 000). p= periodicity, n = sample size, c= All tests are-non-destructive unless indicated by 'D' acceptance criterion. EXAMINATION REF. CONDITIONS INSPECTION REQUIREMENTS BS T = 25C unless otherwise OR cece case stated LIMITS LEVELS TEST 50000 Min. Max. pP n SUBGROUP CI 3 8 Dimensions 4.2.2 See figure 3. Appendix All dimensions except U,, U and A Ar Mar 4 SUBGROUP C2a 3 13 Transition frequency 4.3.4 V.-= 10 V |. = 250 mA 3.0 Miz - f T.O41 ce c Tt f = 1.0 HHz SUBGROUP C2b Tease 150C 3 18 Collector-emitter 4.3.4 | -Vp= 4OV Vee = 1-5 V 2N4898 - 1.0 mA cut-off current T.009 ~"cex(2) Veg = 60 V Veep = 1-5 V 2N4899 - 1.0 mA Veg = 80 Vv Vee =1.5V 2N4900 - 1.0 mA SUBGROUP C3 3 8 Tensile test 'p! 4.4.9 IEC 68-2-21 F= 20 N Test Ua Method 1 SUBGROUP C4 3 18 Resistance to 4.4.8 1EC 68-2-20A soldering heat p! Test Tb Method 1A Post-test end-points lepo(1) 4.3.4 Conditions as Subgroup A2b - 0.) m T.001 h 4.3.4 Conditions as Subgroup A2b 20 100 21E(1) 7.001 SUBGROUP C6 3 8 Acceleration 44d Acceleration 196,000 m/sz steady state . for 1 min. Case mounted leads inwards Vibration 44.6 Frequency gange 125 - 2000 Hz at 196 m/s Post-test end-points - 4.3.4 diti as Sub A2b - 0.1 mA leBo(1) ra Conditions ubgroupNote:- (See 3.5.6 of BS CECC 50 000). TEST CONDITIONS AND INSPECTION REQUIREMENTS GROUP C - Perropic 2. All tests are destructive unless indicated by 'D' All devices subjected to Test marked D shall not be accepted for release. p = periodicity, n = sample size, c = acceptance criterion. BS CECC 50 003-013 Issue 2 July 1981 INSPECTION REQUIREMENTS _ EXAMINATION REF. CONDITIONS BS OR LIMITS LEVEL cecc T. case ~ 25C unless otherwise TEST 50000 stated MIN. MAX. p n c SUBGROUP C6 contd. Mote (a) 4.3.4 Conditions as Subgroup A2b 20 100 T.006 SUBGROUP C8 3 34 2 Electrical 4.5.23} High temperature reverse bias endurance Duration 1000 hours min. T = 200C case Post-test end-points ~. 1 4.3.4 Conditions as Subgroup A2b - - cBo(1) T.001 | Limits as 88 hoe) 4.3.4 Conditions as Subgroup A2b - - T.00 Limits as B8 SUBGROUP C9 3 34 2 Storage at 4.4] IEC 68~2-2 high temperature 'D! Test Ba Min. 1000 hours at T = 200C amb Post-test end-points BoC) 4.3.4 Conditions as Subgroup A2b - - T.001 Limits as B8 hoye(1) 4.3.4 Conditions as Subgroup A2b - - T.006 Limits as B8 SUBGROUP _CTR Attributes information for C3, C and C9 Measurement information For Tego) 29 hoye (a) before and after C8.IES aa ee EOI MERITS AER NTN 6 ALY SIE AENTERTT PEDO | ALARA DAN EE oo VASE a t2 to BS CECC 50 003-013 Issue 2. July 1981 Figure 1 DERATING CURVE IX 20 1S N MAXIMUM POWER DISSIPATION - WATTS : \ 0 20 40 60 80 100 120 140 160 - 180 200 T - TEMPERATURE - C caseSh RE AP ARR AES RM CEDAR REE eM OARS THERSE NIE WADE Rn Pa FS GT ES c f Pets mci ae = aaa ee s SOR deborah spied eer an seen be BS CECC 50 003-013 Issue 2) July 1981 Figure 2 SAFE OPERATING AREA le C (A) pc OPERATION 2N4898 i 2N4899 2N4900 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 Voe(v) cdBS CECC 50 003-013 ISSUE 2 JULY 1981 FIGURE 3 The inch dimensions are derived from the original millimetre 2 \ 4 > P The inch dimensions are derived from the original miflimetre - dimensions. dimensions. Millimetres Inches Millimetres Inches Ref. | Min.| Nom. Max. | Min. Nom. Max. | Notes Ref Min. | Nom, | Max. Min. Nom. | Max. db, 07 - 0.85 | 0.028 - 0.033 A - _ 8.64 - - 0.34 d - 5.1 - - 0.200(*) - 1 gD - - 12.65 - - 0.498 ' t | 9.15) - 0.36 - - F - - 3.18 - _ 0.125 i tit - - 15 ~ - 0.059 R 1 - - 8.89 - - 0.35 | oP 3.61/ 3.86 | 0.142 - 0.152 Ry - ~ 3.68 - _ 0.145 q |24.33]/24.38 | 24.42 |0.968 | 0.960 0.962 u,]| - | - 13180 - - 1.252 9 114.6(*) - - 0.583(*} 1 UZ - |17.80 ~ - 0.7 The cross section of each terminal at a distance yy max. from the seating plene lies in a circle having a diameter of 1.6 mm (0.063") centred at the true geometrical position defining the terminal axis at its point of exit. BSI 1981 10