TOSHIBA TLP731(D4)SERIES,TLP741(D4)SERIES TOSHIBA PHOTOCOUPLER TLP731(D4)SERIES , TLP741(D4)SERIES ATTACHMENT : SPECIFICATIONS FOR VDE0884 OPTION : (D4) Types : TLP731, TLP732, TLP741G, TLP741J Type designations for Option : (D4), which are tested under VDE0884 requirements. Ex. : TLP732 (D4-GR-LF2) D4 : VDE0884 option GR : CTR rank LF2 : lead bend Note : Use Toshiba standard type number for safety standard application. Ex. TLP732 (D4-GR-LF2) TLP732 VDE0884 ISOLATION CHARACTERISTICS DESCRIPTION SYMBOL RATING | UNIT Application Classification (DIN VDE0109 / 12.83, Table 1) for rated mains voltage 300Vypms LIV for rated mains voltage=600Vrms -I Climatic Classification (DIN IEC68 Teil 1/09.80) 55/100/21 | Pollution Degree (DIN VDE0109 / 12.83) 2 Maximum Operating Insulation Voltage VIORM 630 Vpk Input to output Test Voltage, Method A Vpr=1.2XVIORM. Type and Sample Test Vpr 760 Vpk tp=60s, Partial Discharge <5pC Input to output Test Voltage, Method B Vpr=1.6XVIORM, 100% Production Test Vpr 1000 Vpk tp=1s, Partial Discharge <5pC Highest Permissible Overveltage . k (Transient Overvoltage, tpr =10s) VTR 6000 Vp Safety Limiting Values (Max. permissible ratings in case of fault, also refer to thermal derating curve) Current (Input current Ip, Psj =0) Tg 400 mA Power (Output or Total Power Dissipation) Psi 700 mW Temperature Tsi 150 C Insulation Resistance at Tsi, Vig =500V Rgj 210 Q 961001EBC2 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage. The products described in this document are subject to foreign exchange and foreign trade control laws. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1998-02-27 1/3TOSHIBA TLP731(D4)SERIES,TLP741(D4)SERIES INSULATION RELATED SPECIFICATIONS 7.62mm pitch 10.16mm pitch standard type (LF2) type Minimum Creepage Distance (*) | Cr 7.0mm 8.0mm Minimum Clearance (*) | Cl 7.0mm 8.0mm Minimum Insulation Thickness ti 0.5mm Comperative Tracking Index CTI 175 (DIN IEC112/VDE0303, Part 1) (VDE0109 / 12.83 Group Ila) ((*) in accordance with DIN (*1) Ifa printed circui VDE0109 / 12.83, Table 2, & 4) t is incorporated, the creepage distance and clearance may be reduced below this value (e. g. at a standard distance between soldering eye centres of 7.5mm). If this (*2) This photocoupler limit data. is not permissible, the user shall take suitable measures. is suitable for safe electrical isolation only within the safety Maintenance of the safety data shall be ensured by means of protective circuits. VDE Test sign : Marking on product $ for VDE0884 CN Marking on packing for VDE0884 ? 0884 1998-02-27 2/3TOSHIBA TLP731(D4)SERIES,TLP741(D4)SERIES Figure 1 Partial discharge measurement procedure according to VDE0884 Destructive test for qualification and sampling tests. Method A VINITIAL (6kV) (for type and sampling tests, destructive tests) ty, tg =1 to 10s tg, t4 =l1s tp (Measuring time for partial discharge) =50s th = 62s tini =10s Figure 2 Partial discharge measurement procedure according to VDE0884 Non-destructive test for 100% inspection. Method B <==* Vv Vpr (KV) (for sample test, non- r r VIORM (630V) destructive test) ee if oy tg, t4 =0.1s tp (Measuring time for partial discharge) =1s th =1.2s tp j t tg th t : Figure 3 Dependency of maximum safety ratings on ambient temperature 1000 TTT gi Pi (mA)| 400 800 | (mW) 300 600 200 <tIpj < 400 100 Pg 200 0 0 0 25 50 75 100 125 150 175 Ta (C) 1998-02-27 3/3