Diod e Silicon Carbide Schottky Diode IDH10G120C5 5th Generation CoolSiCTM 1200 V SiC Schottky Diode Final Da ta sheet Rev. 2.1 2017-07-21 Indust rial Po wer C o ntrol IDH10G120C5 5th Generation CoolSiCTM 1200 V SiC Schottky Diode CoolSiCTM SiC Schottky Diode Features: Revolutionary semiconductor material - Silicon Carbide No reverse recovery current / No forward recovery Temperature independent switching behavior Low forward voltage even at high operating temperature Tight forward voltage distribution Excellent thermal performance Extended surge current capability Specified dv/dt ruggedness 1) Qualified according to JEDEC for target applications Pb-free lead plating; RoHS compliant Benefits System efficiency improvement over Si diodes Enabling higher frequency / increased power density solutions System size / cost savings due to reduced heatsink requirements and smaller magnetics Reduced EMI Highest efficiency across the entire load range Robust diode operation during surge events High reliability RelatedLinks: www.infineon.com/sic Applications Solar inverters Uninterruptable power supplies Motor drives Power Factor Correction Package pin definitions Pin 1 and backside - cathode Pin 2 - anode Key Performance and Package Parameters Type IDH10G120C5 VDC IF QC Tj,max Marking Package 1200V 10A 41nC 175C D1012C5 PG-TO220-2-1 1) J-STD20 and JESD22 Final Data Sheet 2 Rev. 2.1, 2017-07-21 IDH10G120C5 5th Generation CoolSiCTM 1200 V SiC Schottky Diode Table of Contents Description .................................................................................................................................................. 2 Table of Contents ........................................................................................................................................ 3 Maximum Ratings ....................................................................................................................................... 4 Thermal Resistances .................................................................................................................................. 4 Electrical Characteristics............................................................................................................................. 5 Electrical Characteristics Diagram .............................................................................................................. 6 Package Drawings ...................................................................................................................................... 9 Revision History ........................................................................................................................................ 10 Disclaimer ................................................................................................................................................. 11 Final Data Sheet 3 Rev. 2.1, 2017-07-21 IDH10G120C5 5th Generation CoolSiCTM 1200 V SiC Schottky Diode Maximum ratings Parameter Symbol Value Unit Repetitive peak reverse voltage VRRM 1200 V Continues forward current for Rth(j-c,max) TC = 155C, D=1 TC = 135C, D=1 TC = 25C, D=1 Surge non-repetitive forward current, sine halfwave TC=25C, tp=10ms TC=150C, tp=10ms Non-repetitive peak forward current TC = 25C, tp=10 s it value TC = 25C, tp=10 ms TC = 150C, tp=10 ms Diode dv/dt ruggedness VR=0...960V Power dissipation TC = 25C 10.0 15.2 31.9 IF A A IF,SM 99 84 IF,max 711 A idt 49 35 As dv/dt 80 V/ns Ptot 165 W Operating temperature Tj -55...175 C Storage temperature Tstg -55...150 C Tsold 260 C M 0.7 Nm Soldering temperature, wavesoldering only allowed at leads, 1.6mm (0.063 in.) from case for 10 s Mounting torque M3 and M4 screws Thermal Resistances Parameter Value Symbol Conditions Unit min. typ. max. - 0.7 0.91 K/W - - 62 K/W Characteristic Diode thermal resistance, junction - case Thermal resistance, junction - ambient Final Data Sheet Rth(j-c) Rth(j-a) leaded 4 Rev. 2.1, 2017-07-21 IDH10G120C5 5th Generation CoolSiCTM 1200 V SiC Schottky Diode Electrical Characteristics Static Characteristics, at Tj=25C, unless otherwise specified Parameter Value Symbol Conditions min. typ. max. 1200 - 1.5 2.0 4 22 1.8 2.6 62 320 Unit Static Characteristic DC blocking voltage VDC Diode forward voltage VF Reverse current IR Tj = 25C IF= 10A, Tj=25C IF= 10A, Tj=150C VR=1200V, Tj=25C VR=1200V, Tj=150C V V A Dynamic Characteristics, at Tj=25C, unless otherwise specified Parameter Value Symbol Conditions Unit min. typ. max. - 41 - nC - 525 37 29 - pF Dynamic Characteristics VR=800V, Tj=150C Total capacitive charge QC VR QC C (V )dV 0 Total Capacitance Final Data Sheet C VR=1 V, f=1 MHz VR=400 V, f=1 MHz VR=800 V, f=1 MHz 5 Rev. 2.1, 2017-07-21 IDH10G120C5 5th Generation CoolSiCTM 1200 V SiC Schottky Diode Electrical Characteristics Diagram Figure 1. Power dissipation as a function of case temperature, Ptot=f(TC), Rth(j-c),max Figure 2. Diode forward current as function of temperature, Tj175C, Rth(j-c),max, parameter D=duty cycle, Vth, Rdiff @ Tj=175C Figure 3. Typical forward characteristics, IF=f(VF), tp= 10 s, parameter: Tj Figure 4. Typical forward characteristics in surge current, IF=f(VF), tp= 10 s, parameter: Tj Final Data Sheet 6 Rev. 2.1, 2017-07-21 IDH10G120C5 5th Generation CoolSiCTM 1200 V SiC Schottky Diode Figure 5. Typical capacitive charge as function 1 of current slope , QC=f(dIF/dt), Tj=150C Figure 6. Typical reverse current as function of reverse voltage, IR=f(VR), parameter: Tj 1) Only capacitive charge, guaranteed by design. Figure 7. Max. transient thermal impedance, Zth,jc=f(tP), parameter: D=tP/T Final Data Sheet Figure 8. Typical capacitance as function of reverse voltage, C=f(VR); Tj=25C; f=1 MHz 7 Rev. 2.1, 2017-07-21 IDH10G120C5 5th Generation CoolSiCTM 1200 V SiC Schottky Diode Figure 9. Typical capacitively stored energy as function of reverse voltage, VR EC C (V )VdV 0 Final Data Sheet 8 Rev. 2.1, 2017-07-21 IDH10G120C5 5th Generation CoolSiCTM 1200 V SiC Schottky Diode Package Drawings Final Data Sheet 9 Rev. 2.1, 2017-07-21 IDH10G120C5 5th Generation CoolSiCTM 1200 V SiC Schottky Diode Revision History IIDH10G120C5 Revision: 2017-07-21, Rev. 2.1 Previous Revision: Revision Date Subjects (major changes since last version) 2.0 2015-07-22 Final data sheet 2.1 Editorial Changes Disclaimer We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Final Data Sheet 10 Rev. 2.1, 2017-07-21 IDH10G120C5 5th Generation CoolSiCTM 1200 V SiC Schottky Diode Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 2017. 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Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies' products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. Final Data Sheet 11 Rev. 2.1, 2017-07-21