Industrial Power Control
Diode
Silicon Carbide Schottky Diode
Final Datasheet
Rev. 2.1 2017-07-21
IDH10G120C5
5th Generation CoolSiC™ 1200 V SiC Schottky Diode
1) J-STD20 and JESD22
Final Data Sheet 2 Rev. 2.1, 2017-07-21
5th Generation CoolSiC™ 1200 V SiC Schottky Diode
IDH10G120C5
CoolSiCTM SiC Schottky Diode
Features:
Revolutionary semiconductor material - Silicon Carbide
No reverse recovery current / No forward recovery
Temperature independent switching behavior
Low forward voltage even at high operating temperature
Tight forward voltage distribution
Excellent thermal performance
Extended surge current capability
Specified dv/dt ruggedness
Qualified according to JEDEC1) for target applications
Pb-free lead plating; RoHS compliant
Benefits
System efficiency improvement over Si diodes
Enabling higher frequency / increased power density solutions
System size / cost savings due to reduced heatsink requirements and smaller magnetics
Reduced EMI
Highest efficiency across the entire load range
Robust diode operation during surge events
High reliability
RelatedLinks: www.infineon.com/sic
Applications
Solar inverters
Uninterruptable power supplies
Motor drives
Power Factor Correction
Package pin definitions
Pin 1 and backside – cathode
Pin 2 – anode
Key Performance and Package Parameters
Type
VDC
IF
QC
Tj,max
Marking
Package
IDH10G120C5
1200V
10A
41nC
175°C
D1012C5
PG-TO220-2-1
Final Data Sheet 3 Rev. 2.1, 2017-07-21
5th Generation CoolSiC™ 1200 V SiC Schottky Diode
IDH10G120C5
Table of Contents
Description .................................................................................................................................................. 2
Table of Contents ........................................................................................................................................ 3
Maximum Ratings ....................................................................................................................................... 4
Thermal Resistances .................................................................................................................................. 4
Electrical Characteristics ............................................................................................................................. 5
Electrical Characteristics Diagram .............................................................................................................. 6
Package Drawings ...................................................................................................................................... 9
Revision History ........................................................................................................................................ 10
Disclaimer ................................................................................................................................................. 11
Final Data Sheet 4 Rev. 2.1, 2017-07-21
5th Generation CoolSiC™ 1200 V SiC Schottky Diode
IDH10G120C5
Maximum ratings
Parameter
Symbol
Value
Unit
Repetitive peak reverse voltage
VRRM
1200
V
Continues forward current for Rth(j-c,max)
TC = 155°C, D=1
TC = 135°C, D=1
TC = 25°C, D=1
IF
10.0
15.2
31.9
A
Surge non-repetitive forward current,
sine halfwave
TC=25°C, tp=10ms
TC=150°C, tp=10ms
IF,SM
99
84
A
Non-repetitive peak forward current
TC = 25°C, tp=10 µs
IF,max
711
A
i²t value
TC = 25°C, tp=10 ms
TC = 150°C, tp=10 ms
∫ i²dt
49
35
A²s
Diode dv/dt ruggedness
VR=0…960V
dv/dt
80
V/ns
Power dissipation
TC = 25°C
Ptot
165
W
Operating temperature
Tj
-55…175
°C
Storage temperature
Tstg
-55…150
°C
Soldering temperature,
wavesoldering only allowed at leads,
1.6mm (0.063 in.) from case for 10 s
Tsold
260
°C
Mounting torque
M3 and M4 screws
M
0.7
Nm
Thermal Resistances
Parameter
Symbol
Conditions
Value
Unit
min.
typ.
max.
Characteristic
Diode thermal resistance,
junction – case
Rth(j-c)
-
0.7
0.91
K/W
Thermal resistance,
junction – ambient
Rth(j-a)
leaded
-
-
62
K/W
Final Data Sheet 5 Rev. 2.1, 2017-07-21
5th Generation CoolSiC™ 1200 V SiC Schottky Diode
IDH10G120C5
Electrical Characteristics
Static Characteristics, at Tj=25°C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
min.
typ.
max.
Static Characteristic
DC blocking voltage
VDC
Tj = 25°C
1200
-
-
V
Diode forward voltage
VF
IF= 10A, Tj=25°C
IF= 10A, Tj=150°C
-
-
1.5
2.0
1.8
2.6
V
Reverse current
IR
VR=1200V, Tj=25°C
VR=1200V, Tj=150°C
4
22
62
320
µA
Dynamic Characteristics, at Tj=25°C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
min.
typ.
max.
Dynamic Characteristics
Total capacitive charge
QC
VR=800V, Tj=150°C
R
V
CdVVCQ
0
)(
-
41
-
nC
Total Capacitance
C
VR=1 V, f=1 MHz
VR=400 V, f=1 MHz
VR=800 V, f=1 MHz
-
-
-
525
37
29
-
-
-
pF
Final Data Sheet 6 Rev. 2.1, 2017-07-21
5th Generation CoolSiC™ 1200 V SiC Schottky Diode
IDH10G120C5
Electrical Characteristics Diagram
Figure 1. Power dissipation as a function
of case temperature, Ptot=f(TC),
Rth(j-c),max
Figure 2. Diode forward current as function
of temperature, Tj≤175°C,
Rth(j-c),max, parameter D=duty cycle,
Vth, Rdiff @ Tj=175°C
Figure 3. Typical forward characteristics,
IF=f(VF), tp= 10 µs, parameter: Tj
Figure 4. Typical forward characteristics in surge
current, IF=f(VF), tp= 10 µs,
parameter: Tj
Final Data Sheet 7 Rev. 2.1, 2017-07-21
5th Generation CoolSiC™ 1200 V SiC Schottky Diode
IDH10G120C5
Figure 5. Typical capacitive charge as function
of current slope1, QC=f(dIF/dt), Tj=150°C
1) Only capacitive charge, guaranteed by design.
Figure 6. Typical reverse current as function
of reverse voltage, IR=f(VR), parameter: Tj
Figure 7. Max. transient thermal impedance,
Zth,jc=f(tP), parameter: D=tP/T
Figure 8. Typical capacitance as function of
reverse voltage, C=f(VR); Tj=25°C; f=1 MHz
Final Data Sheet 8 Rev. 2.1, 2017-07-21
5th Generation CoolSiC™ 1200 V SiC Schottky Diode
IDH10G120C5
Figure 9. Typical capacitively stored energy as
function of reverse voltage,
R
V
CVdVVCE
0
)(
Final Data Sheet 9 Rev. 2.1, 2017-07-21
5th Generation CoolSiC™ 1200 V SiC Schottky Diode
IDH10G120C5
Package Drawings
Final Data Sheet 10 Rev. 2.1, 2017-07-21
5th Generation CoolSiC™ 1200 V SiC Schottky Diode
IDH10G120C5
Revision History
Disclaimer
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IIDH10G120C5
Revision: 2017-07-21, Rev. 2.1
Previous Revision:
Revision
Date
Subjects (major changes since last version)
2.0
2015-07-22
Final data sheet
2.1
-
Editorial Changes
Final Data Sheet 11 Rev. 2.1, 2017-07-21
5th Generation CoolSiC™ 1200 V SiC Schottky Diode
IDH10G120C5
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2017.
All Rights Reserved.
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