1000 V, 40 A Field Stop Trench IGBT Features General Description * High Current Capability Using innovative field stop trench IGBT technology, ON Semiconductor new series of field stop trench IGBTs offer the optimum perfor-mance for hard switching application such as UPS, welder and PFC applications. * Low Saturation Voltage: VCE(sat) = 1.9 V(Typ.) @ IC = 40 A * High Input Impedance * Fast Switching * RoHS Compliant Applications * UPS, welder, PFC E C C G G COLLECTOR (FLANGE) E Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF IFM (1) PD TJ Description Ratings Unit Collector to Emitter Voltage 1000 V Gate to Emitter Voltage 25 V Transient Gate to Emitter Voltage 30 V 80 A Collector Current @ TC = 25oC Collector Current @ TC = 100oC 40 A Pulsed Collector Current @ TC = 25oC 120 A Diode Forward Current @ TC = 25oC 80 A Diode Forward Current @ TC = 100oC 40 A o Pulsed Diode Forward Current @ TC = 25 C 120 A Maximum Power Dissipation @ TC = 25oC 333 W Maximum Power Dissipation @ TC = 100oC 166 Operating Junction Temperature Tstg Storage Temperature Range TL Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds W -55 to +175 o -55 to +175 oC o 300 C C Notes: 1: Repetitive rating: Pulse width limited by max. junction temperature Thermal Characteristics Symbol Parameter Typ. Max. Unit o RJC(IGBT) Thermal Resistance, Junction to Case - 0.45 RJC(Diode) Thermal Resistance, Junction to Case - 0.8 oC/W RJA Thermal Resistance, Junction to Ambient - 40 o (c)2012 Semiconductor Components Industries, LLC. August-2017, Rev. 3 C/W C/W Publication Order Number: FGH40T100SMD/D FGH40T100SMD -- 1000 V, 40 A Field Stop Trench IGBT FGH40T100SMD Device Marking Device Package Reel Size Tape Width Quantity FGH40T100SMD FGH40T100SMD TO-247 A03 - - 30ea FGH40T100SMD FGH40T100SMD-F155 TO-247 G03 - - 30ea Electrical Characteristics of the IGBT Symbol Parameter TC = 25C unless otherwise noted Test Conditions Min. Typ. Max. Unit 1000 - - V Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 1 mA BVCES TJ Temperature Coefficient of Breakdown Voltage VGE = 0 V, IC = 250 uA - 0.6 - V/oC ICES Collector Cut-Off Current VCE = VCES, VGE = 0 V - - 1000 A IGES G-E Leakage Current VGE = VGES, VCE = 0 V - - 500 nA IC = 250 uA, VCE = VGE 4.2 5.3 6.5 V IC = 40 A, VGE = 15 V - 1.9 2.3 V IC = 40 A, VGE = 15 V, TC = 175oC - 2.4 - V - 3980 5295 pF - 124 165 pF - 76 115 pF On Characteristics VGE(th) G-E Threshold Voltage VCE(sat) Collector to Emitter Saturation Voltage Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VCE = 30 V, VGE = 0 V, f = 1 MHz Switching Characteristics td(on) Turn-On Delay Time - 29 38 ns tr Rise Time - 42 55 ns td(off) Turn-Off Delay Time - 285 371 ns tf Fall Time - 23 30 ns Eon Turn-On Switching Loss - 2.35 3.1 mJ Eoff Turn-Off Switching Loss - 1.15 1.5 mJ VCC = 600 V, IC = 40 A, RG = 10 , VGE = 15 V, Inductive Load, TC = 25oC Ets Total Switching Loss - 3.5 4.6 mJ td(on) Turn-On Delay Time - 27 36 ns tr Rise Time - 49 64 ns td(off) Turn-Off Delay Time - 285 371 ns tf Fall Time Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss - 1.9 2.5 mJ Ets Total Switching Loss - 6.3 8.2 mJ Qg Total Gate Charge Qge Gate to Emitter Charge Qgc Gate to Collector Charge VCC = 600 V, IC = 40 A, RG = 10 , VGE = 15 V, Inductive Load, TC = 175oC VCE = 600 V, IC = 40 A, VGE = 15 V www.onsemi.com 2 - 20 26 ns - 4.4 5.7 mJ - 265 398 nC - 32 48 nC - 135 203 nC FGH40T100SMD -- 1000 V, 40 A Field Stop Trench IGBT Package Marking and Ordering Information Symbol Test Conditions Parameter VFM Diode Forward Voltage trr Diode Reverse Recovery Time TC = 25C unless otherwise noted IF = 40 A IF =40 A, dIF/dt = 200 A/s Qrr Diode Reverse Recovery Charge Min. Typ. Max TC = 25oC - 3.4 4.4 TC = 175oC - 2.6 - TC = 25oC - 60 78 o TC = 175 C - 256 - TC = 25oC - 185 260 - 1512 - TC = www.onsemi.com 3 175oC Unit V ns nC FGH40T100SMD -- 1000 V, 40 A Field Stop Trench IGBT Electrical Characteristics of Diode Figure 2. Typical Output Characteristics Figure 1. Typical Output Characteristics 120 20V o 20V o TC = 25 C TC = 175 C 12V 12V 15V Collector Current, IC [A] 100 Collector Current, IC [A] 120 15V 80 10V 60 40 90 10V 60 30 VGE = 8V 20 VGE = 8V 0 0 2 4 6 8 Collector-Emitter Voltage, VCE [V] 0 10 Figure 3. Typical Saturation Voltage Characteristics 0 4 Collector-Emitter Voltage, VCE [V] Common Emitter VGE = 15V o Collector Current, IC [A] 6 Figure 4. Saturation Voltage vs. Case Temperature at Variant Current Level 120 TC = 25 C 90 o TC = 175 C 60 30 0 1 2 3 4 Collector-Emitter Voltage, VCE [V] 5 80A 3 40A 2 IC = 20A 50 75 100 125 150 o Case Temperature, TC [ C] 175 Figure 6. Saturation Voltage vs. VGE Figure 5. Saturation Voltage vs. VGE 20 20 Common Emitter o Collector-Emitter Voltage, VCE V 16 12 8 40A Common Emitter ] [16 TC = 25 C 80A 4 IC = 20A 0 Common Emitter VGE = 15V 1 25 0 Collector-Emitter Voltage, VCE [V] 2 4 Collector-Emitter Voltage, VCE [V] o TC = 175 C 12 8 80A 40A 4 IC = 20A 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 4 20 www.onsemi.com 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 FGH40T100SMD -- 1000 V, 40 A Field Stop Trench IGBT Typical Performance Characteristics Figure 8. Gate charge Characteristics Figure 7. Capacitance Characteristics 15 10000 Gate-Emitter Voltage, VGE [V] Capacitance [pF] Cies 1000 Coes 100 Cres Common Emitter VGE = 0V, f = 1MHz 12 400V 9 6 3 Common Emitter o o TC = 25 C 10 0.1 VCC = 600V 200V TC = 25 C 1 10 Collector-Emitter Voltage, VCE [V] 0 30 Figure 9. Turn-on Characteristics vs. Gate Resistance 0 50 100 150 200 Gate Charge, Qg [nC] 250 300 Figure 10. Turn-off Characteristics vs. Gate Resistance 200 2000 1000 100 Switching Time [ns] Switching Time [ns] td(off) tr Common Emitter VCC = 600V, VGE = 15V IC = 40A td(on) o TC = 25 C 100 tf 10 Common Emitter VCC = 600V, VGE = 15V IC = 40A o TC = 25 C o o TC = 175 C TC = 175 C 10 1 0 10 20 30 40 Gate Resistance, RG [ ] 50 0 Figure 11. Switching Loss vs. Gate Resistance 10 20 30 40 Gate Resistance, RG [ ] 50 Figure 12. Turn-on Characteristics vs. Collector Current 10 1000 Eon Common Emitter VGE = 15V, RG =10 Switching Time [ns] Switching Loss [mJ] o TC = 25 C Eoff 1 Common Emitter VCC = 600V, VGE = 15V IC = 40A o TC = 175 C tr 100 td(on) o TC = 25 C o TC = 175 C 0.1 0 10 20 30 40 10 20 50 Gate Resistance, RG [ ] 30 40 50 60 Collector Current, IC [A] www.onsemi.com 5 70 80 FGH40T100SMD -- 1000 V, 40 A Field Stop Trench IGBT Typical Performance Characteristics Figure 14. Switching Loss vs. Collector Current Figure 13. Turn-off Characteristics vs. Collector Current 15 1000 10 Eon Switching Loss [mJ] Switching Time [ns] td(off) 100 tf 10 Common Emitter VGE = 15V, RG = 10 1 Eoff Common Emitter VGE = 15V, RG = 10 o o TC = 25 C TC = 25 C o o TC = 175 C TC = 175 C 1 20 0.1 30 40 50 60 70 80 20 30 40 50 60 Figure 15. Load Current Vs. Frequence 80 Figure 16. SOA Characteristics 300 100 100 VCC = 600V 10s load Current : peak of square wave 100s Collector Current, Ic [A] ] Collector Current, IC A 70 Collector Current, IC [A] Collector Current, IC [A] 50 1ms 10 ms DC 10 1 *Notes: 0.1 o 1. TC = 25 C Duty cycle : 50% o 2. TJ = 175 C 3. Single Pulse o T = 125 C C 0.01 Powe Dissipation = 111 W 0 1k 10k 100k 1 1M Switching Frequency, f [Hz] Figure 17. Forward Characteristics 10 100 1000 2000 Collector-Emitter Voltage, VCE [V] Figure 18. Reverse Recovery Current 80 21 Reverse Recovery Currnet, Irr [A] o Forward Current, IF [A] o Tc = 175 C o Tc = 75 C 10 o Tc = 25 C o Tc = 25 C o Tc = 75 C --o TC = 25 C 18 T = 175oC C diF/dt = 200A/s 15 12 diF/dt = 100A/s 9 diF/dt = 200A/s 6 diF/dt = 100A/s 3 Tc = 175 C 1 0 1 2 3 Forward Voltage, VF [V] 4 0 5 0 www.onsemi.com 6 20 40 60 Forward Current, IF [A] 80 FGH40T100SMD -- 1000 V, 40 A Field Stop Trench IGBT Typical Performance Characteristics Figure 20. Stored Charge Figure 19. Reverse Recovery Time 360 2500 o o 300 TC = 175 C Stored Recovery Charge, Qrr [nC] o --- 240 180 diF/dt = 200A/s diF/dt = 100A/s 120 60 TC = 25 C o TC = 175 C 2000 1500 1000 diF/dt = 200A/s diF/dt = 100A/s 500 0 0 20 40 60 80 0 20 Forward Current, IF [A] 40 60 Forward Current, IF [A] Figure 21. Transient Thermal Impedance of IGBT 1 Thermal Response [Zthjc] 0 0.5 0.1 0.2 0.1 0.05 0.02 PDM 0.01 0.01 t1 t2 single pulse Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 0.001 0.00001 0.0001 0.001 0.01 0.1 Rectangular Pulse Duration [sec] Figure 22.Transient Thermal Impedance of Diode 1 Thermal Response [Zthjc] Reverse Recovery Time, trr [ns] TC = 25 C 0.5 0.1 0.2 0.1 0.05 0.02 0.01 PDM 0.01 t1 single pulse t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC 0.001 0.00001 0.0001 0.001 Rectangular Pulse Duration [sec] www.onsemi.com 7 0.01 0.1 80 FGH40T100SMD -- 1000 V, 40 A Field Stop Trench IGBT Typical Performance Characteristics FGH40T100SMD -- 1000 V, 40 A Field Stop Trench IGBT Mechanical Dimensions Figure 23. TO-247,MOLDED,3 LEAD,JEDEC VARIATION AB (Active) Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor's worldwide terms and conditions, specif-ically the warranty therein, which covers ON Semiconductor products. Dimensions in Millimeters www.onsemi.com 8 FGH40T100SMD -- 1000 V, 40 A Field Stop Trench IGBT Mechanical Dimensions Figure 23. TO-247 3L - TO-247,MOLDED,3 LEADS,JEDEC AB LONG LEADS Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. 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