©2012 Semiconductor Components Industries, LLC.
August-2017, Rev. 3
FGH40T100SMD — 1000 V, 40 A Field Stop Trench IGBT
Absolute Maximum Ratings
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol Description Ratings Unit
VCES Collector to Emitter Voltage 1000 V
VGES
Gate to Emitter Voltage ± 25 V
Transient Gate to Emitter Voltage ± 30 V
IC
Collector Current @ TC = 25oC 80 A
Collector Current @ TC = 100oC 40 A
ICM (1) Pulsed Collector Current @ TC = 25oC 120 A
IF
Diode Forward Current @ TC = 25oC 80 A
Diode Forward Current @ TC = 100oC 40 A
IFM (1) Pulsed Diode Forward Current @ TC = 25oC 120 A
PD
Maximum Power Dissipation @ TC = 25oC 333 W
Maximum Power Dissipation @ TC = 100oC 166 W
TJ Operating Junction Temperature -55 to +175 oC
Tstg Storage Temperature Range -55 to +175 oC
TL
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds 300 oC
Symbol Parameter Typ. Max. Unit
RθJC(IGBT) Thermal Resistance, Junction to Case - 0.45 oC/W
RθJC(Diode) Thermal Resistance, Junction to Case - 0.8 oC/W
RθJA Thermal Resistance, Junction to Ambient - 40 oC/W
G
E
C
E C
G
COLLECTOR
(FLANGE)
FGH40T100SMD
1000 V, 40 A Field Stop Trench IGBT
Features
• High Current Capability
• Low Saturation Voltage: VCE(sat) = 1.9 V(Typ.) @ IC = 40 A
• High Input Impedance
• Fast Switching
• RoHS Compliant
Applications
• UPS, welder, PFC
General Description
Using innovative field stop trench IGBT technology, ON
Semiconductor new series of field stop trench IGBTs offer the
optimum perfor-mance for hard switching application such as
UPS, welder and PFC applications.
Publication Order Number:
FGH40T100SMD/D
FGH40T100SMD — 1000 V, 40 A Field Stop Trench IGBT
Package Marking and Ordering Information
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Device Marking Device Package Reel Size Tape Width Quantity
FGH40T100SMD FGH40T100SMD TO-247 A03 - - 30ea
FGH40T100SMD
FGH40T100SMD-F155
TO-247 G03 - - 30ea
Symbol Parameter Test Conditions Min. Typ. Max. Unit
Off Characteristics
BVCES Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 1 mA 1000 - - V
∆BVCES
∆TJ
Temperature Coefficient of Breakdown
Voltage VGE = 0 V, IC = 250 uA - 0.6 - V/oC
ICES Collector Cut-Off Current VCE = VCES, VGE = 0 V - - 1000 µA
IGES G-E Leakage Current VGE = VGES, VCE = 0 V - - ±500 nA
On Characteristics
VGE(th) G-E Threshold Voltage IC = 250 uA, VCE = VGE 4.2 5.3 6.5 V
VCE(sat) Collector to Emitter Saturation Voltage
IC = 40 A, VGE = 15 V - 1.9 2.3 V
IC = 40 A, VGE = 15 V,
TC = 175oC- 2.4 - V
Dynamic Characteristics
Cies Input Capacitance
VCE = 30 V, VGE = 0 V,
f = 1 MHz
- 3980 5295 pF
Coes Output Capacitance - 124 165 pF
Cres Reverse Transfer Capacitance - 76 115 pF
Switching Characteristics
td(on) Turn-On Delay Time
VCC = 600 V, IC = 40 A,
RG = 10 Ω, VGE = 15 V,
Inductive Load, TC = 25oC
- 29 38 ns
trRise Time - 42 55 ns
td(off) Turn-Off Delay Time - 285 371 ns
tfFall Time - 23 30 ns
Eon Turn-On Switching Loss - 2.35 3.1 mJ
Eoff Turn-Off Switching Loss - 1.15 1.5 mJ
Ets Total Switching Loss - 3.5 4.6 mJ
td(on) Turn-On Delay Time
VCC = 600 V, IC = 40 A,
RG = 10 Ω, VGE = 15 V,
Inductive Load, TC = 175oC
- 27 36 ns
trRise Time - 49 64 ns
td(off) Turn-Off Delay Time - 285 371 ns
tfFall Time - 20 26 ns
Eon Turn-On Switching Loss - 4.4 5.7 mJ
Eoff Turn-Off Switching Loss - 1.9 2.5 mJ
Ets Total Switching Loss - 6.3 8.2 mJ
QgTotal Gate Charge
VCE = 600 V, IC = 40 A,
VGE = 15 V
- 265 398 nC
Qge Gate to Emitter Charge - 32 48 nC
Qgc Gate to Collector Charge - 135 203 nC
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FGH40T100SMD — 1000 V, 40 A Field Stop Trench IGBT
Electrical Characteristics of Diode TC = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min. Typ. Max Unit
VFM Diode Forward Voltage IF = 40 A TC = 25oC - 3.4 4.4 V
TC = 175oC - 2.6 -
trr Diode Reverse Recovery Time
IF =40 A, dIF/dt = 200 A/µs
TC = 25oC - 60 78 ns
TC = 175oC - 256 -
Qrr Diode Reverse Recovery Charge TC = 25oC - 185 260 nC
TC = 175oC - 1512 -
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3
FGH40T100SMD — 1000 V, 40 A Field Stop Trench IGBT
Typical Performance Characteristics
Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics
Figure 3. Typical Saturation Voltage Figure 4. Saturation Voltage vs. Case
Characteristics Temperature at Variant Current Level
Figure 5. Saturation Voltage vs. VGE Figure 6. Saturation Voltage vs. VGE
0 2 4 6 8 10
0
20
40
60
80
100
120
V
GE
= 8V
20V T
C
= 25
o
C
15V
12V
10V
Collector Current, I
C
[A]
Collector-Emitter Voltage, V
CE
[V]
0 2 4 6
0
30
60
90
120
V
GE
= 8V
20V
T
C
= 175
o
C
15V
12V
10V
Collector Current, I
C
[A]
Collector-Emitter Voltage, V
CE
[V]
0 1 2 3 4 5
0
30
60
90
120
Common Emitter
VGE = 15V
TC = 25oC
TC = 175oC
Collector Current, IC [A]
Collector-Emitter Voltage, VCE [V]
25 50 75 100 125 150 175
1
2
3
4
80A
40A
IC = 20A
Common Emitter
VGE = 15V
Collector-Emitter Voltage, VCE [V]
Case Temperature, TC [
o
C]
4 8 12 16 20
0
4
8
12
16
20
I
C
= 20A
40A 80A
Common Emitter
T
C
= 25
o
C
Collector-Emitter Voltage, VCE [V]
Gate-Emitter Voltage, V
GE
[V]
4 8 12 16 20
0
4
8
12
16
20
80A
I
C
= 20A
40A
Common Emitter
T
C
= 175
o
C
Collector-Emitter Voltage, V
CE
[
[[
[
V
]
]]
]
Gate-Emitter Voltage, V
GE
[V]
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4
FGH40T100SMD — 1000 V, 40 A Field Stop Trench IGBT
Typical Performance Characteristics
Figure 7. Capacitance Characteristics Figure 8. Gate charge Characteristics
Figure 9. Turn-on Characteristics vs. Figure 10. Turn-off Characteristics vs.
Gate Resistance Gate Resistance
Figure 11. Switching Loss vs. Figure 12. Turn-on Characteristics vs.
Gate Resistance Collector Current
0.1 1 10
10
100
1000
10000
Common Emitter
V
GE
= 0V, f = 1MHz
T
C
= 25
o
C
C
res
C
oes
C
ies
Capacitance [pF]
Collector-Emitter Voltage, VCE [V]
30
0 50 100 150 200 250 300
0
3
6
9
12
15
V
CC
= 600V
200V
Common Emitter
TC = 25oC
400V
Gate-Emitter Voltage, VGE [V]
Gate Charge, Qg [nC]
0 10 20 30 40 50
10
100
200
Switching Time [ns]
Common Emitter
VCC = 600V, VGE = 15V
IC = 40A
TC = 25oC
TC = 175oC
td(on)
tr
Gate Resistance, RG
[
[[
[
Ω
ΩΩ
Ω
]
]]
]
0 10 20 30 40 50
1
10
100
1000
2000
Switching Time [ns]
Common Emitter
VCC = 600V, VGE = 15V
IC = 40A
TC = 25oC
TC = 175oC
td(off)
tf
Gate Resistance, RG
[
[[
[
Ω
ΩΩ
Ω
]
]]
]
20 30 40 50 60 70 80
10
100
1000
Common Emitter
VGE = 15V, RG =10Ω
ΩΩ
Ω
T
C
= 25
o
C
T
C
= 175
o
C
t
r
t
d(on)
Switching Time [ns]
Collector Current, IC [A]
0 10 20 30 40 50
0.1
1
10
Common Emitter
V
CC
= 600V, V
GE
= 15V
I
C
= 40A
T
C
= 25
o
C
T
C
= 175
o
C
E
on
Eoff
Switching Loss [mJ]
Gate Resistance, R
G
[
Ω
ΩΩ
Ω
]
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5
FGH40T100SMD — 1000 V, 40 A Field Stop Trench IGBT
Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs. Figure 14. Switching Loss vs.
Collector Current Collector Current
Figure 15. Load Current Vs. Frequence Figure 16. SOA Characteristics
Figure 17. Forward Characteristics Figure 18. Reverse Recovery Current
20 30 40 50 60 70 80
1
10
100
1000
Common Emitter
VGE = 15V, RG = 10
Ω
ΩΩ
Ω
TC = 25oC
TC = 175oC
td(off)
tf
Switching Time [ns]
Collector Current, IC [A]
20 30 40 50 60 70 80
0.1
1
10
15
Common Emitter
V
GE
= 15V, R
G
= 10Ω
ΩΩ
Ω
T
C
= 25
o
C
T
C
= 175
o
C
E
on
Eoff
Switching Loss [mJ]
Collector Current, IC [A]
1 10 100 1000
0.01
0.1
1
10
100
300
2000
1ms
10 ms
DC
*Notes:
1. TC = 25oC
2. TJ = 175oC
3. Single Pulse
10
µ
µµ
µ
s
100
µ
µµ
µ
s
Collector Current, I
c
[A]
Collector-Emitter Voltage, VCE [V]
1k 10k 100k 1M
0
50
100
Duty cycle : 50%
TC = 125oC
Powe Dissipation = 111 W
VCC = 600V
load Current : peak of square wave
Collector Current, IC A
]
]]
]
Switching Frequency, f [Hz]
0 1 2 3 4 5
1
10
80
Tc = 175
o
C
Tc = 75
o
C
Tc = 25
o
C
Tc = 75
o
C ---
Tc = 175
o
C
Tc = 25
o
C
Forward Current, IF [A]
Forward Voltage, V
F
[V]
0 20 40 60 80
0
3
6
9
12
15
18
21
T
C
= 25
o
C
T
C
= 175
o
C
di
F
/dt = 100A/
µ
µµ
µ
s
di
F
/dt = 200A/
µ
µµ
µ
s
di
F
/dt = 100A/
µ
µµ
µ
s
di
F
/dt = 200A/
µ
µµ
µ
s
Reverse Recovery Currnet, Irr [A]
Forward Current, I
F
[A]
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FGH40T100SMD — 1000 V, 40 A Field Stop Trench IGBT
Typical Performance Characteristics
Figure 19. Reverse Recovery Time Figure 20. Stored Charge
Figure 21. Transient Thermal Impedance of IGBT
Figure 22.Transient Thermal Impedance of Diode
0 20 40 60 80
0
60
120
180
240
300
360
T
C
= 25
o
C
T
C
= 175
o
C
---
di
F
/dt = 200A/
µ
µµ
µ
sdi
F
/dt = 100A/
µ
µµ
µ
s
Reverse Recovery Time, trr [ns]
Forward Current, I
F
[A]
0 20 40 60 80
0
500
1000
1500
2000
2500
T
C
= 25
o
C
T
C
= 175
o
C
di
F
/dt = 200A/
µ
µµ
µ
sdi
F
/dt = 100A/
µ
µµ
µ
s
Stored Recovery Charge, Qrr [nC]
Forward Current, I
F
[A]
0.00001 0.0001 0.001 0.01 0.1
0.001
0.01
0.1
1
0.01
0.02
0.1
0.05
0.2
single pulse
Thermal Response [Zthjc]
Rectangular Pulse Duration [sec]
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + T
C
0.5
t1
PDM
t2
0.00001 0.0001 0.001 0.01 0.1
0.001
0.01
0.1
1
0.01
0.02
0.1
0.05
0.2
single pulse
Thermal Response [Zthjc]
Rectangular Pulse Duration [sec]
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + T
C
0.5
t1
PDM
t2
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FGH40T100SMD — 1000 V, 40 A Field Stop Trench IGBT
Mechanical Dimensions
Figure 23. TO-247,MOLDED,3 LEAD,JEDEC VARIATION AB (Active)
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manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative
to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide
terms and conditions, specif-ically the warranty therein, which covers ON Semiconductor products.
Dimensions in Millimeters
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FGH40T100SMD — 1000 V, 40 A Field Stop Trench IGBT
Mechanical Dimensions
Figure 23. TO-247 3L - TO-247,MOLDED,3 LEADS,JEDEC AB LONG LEADS
Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any
manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative
to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide
terms and conditions, specif-ically the warranty therein, which covers ON Semiconductor products.
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FGH40T100SMD — 1000 V, 40 A Field Stop Trench IGBT
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