2N3439U4 thru 2N3440U4 Compliant NPN LOW POWER SILICON TRANSISTOR Qualified Levels: JAN, JANTX, JANTXV and JANS* Qualified per MIL-PRF-19500/368 (*2N3440U4 only) DESCRIPTION This family of 2N3439U4 through 2N3440U4 high-frequency, epitaxial planar transistors feature low saturation voltage. The U4 package is hermetically sealed and provides a low profile for minimizing board height. These devices are also available in UA, TO-5 and TO-39 packaging. Microsemi also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both through-hole and surface-mount packages. U4 Package Important: For the latest information, visit our website http://www.microsemi.com. FEATURES * JEDEC registered 2N3439U4 through 2N3440U4 series. * RoHS compliant by design. * Vce(sat) = 0.5 V @ Ic = 50 mA. * Turn-On time t on = 1.0 s max @ I C = 20 mA, I B1 = 2.0 mA. * Turn-Off time t off = 10 s max @ I C = 20 mA, I B1 = -I B2 = 2.0 mA. Also available in: UA package (surface mount) 2N3439UA - 2N3440UA TO-5 package (long leaded) 2N3439L - 2N3440L APPLICATIONS / BENEFITS * * TO-39 package General purpose transistors for medium power applications requiring high frequency switching and low package profile. Military and other high-reliability applications. (leaded) 2N3439 - 2N3440 MAXIMUM RATINGS @ T C = +25C unless otherwise noted. Parameters / Test Conditions Symbol 2N3439U4 2N3440U4 Unit Collector-Emitter Voltage V CEO 350 250 V Collector-Base Voltage V CBO 450 300 V Emitter-Base Voltage V EBO 7.0 V IC 1.0 A PD 0.8 5.0 W TJ , Tstg -65 to +200 C Collector Current Total Power Dissipation (1) @ TA = +25 C (2) @ TC = +25 C Operating & Storage Junction Temperature Range Notes: 1. Derate linearly @ 4.57 mW/C for TA > +25 C. 2. Derate linearly @ 28.5 mW/C for TC > +25 C. MSC - Lawrence 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 or (978) 620-2600 Fax: (978) 689-0803 MSC - Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com LDS-0022-2, Rev. 1 (111617) (c)2011 Microsemi Corporation Page 1 of 6 2N3439U4 thru 2N3440U4 MECHANICAL and PACKAGING * * * * * * * CASE: Hermetically sealed, aluminum nitride (AlN) ceramic body with gold over nickel plated kovar lid. TERMINALS: Gold over nickel plated surface mount terminations. MARKING: Part number, date code, manufacturer's ID. POLARITY: See package dimensions. TAPE & REEL option: Standard per EIA-481D. Consult factory for quantities. WEIGHT: 0.125 grams (125 milligrams). See Package Dimensions on last page. PART NOMENCLATURE JAN 2N3439 U4 Reliability Level JAN = JAN Level JANTX = JANTX Level JANTXV = JANTXV Level JANS* = JANS Level (*2N3440U4 only) Blank = commercial Surface Mount Package type JEDEC type number (see Electrical Characteristics table) SYMBOLS & DEFINITIONS Definition Symbol C ibo C obo I CEO I CEX I EBO h FE V BE V CE V CEO V CBO V EB V EBO Common-base open-circuit input capacitance. Common-base open-circuit output capacitance. Collector cutoff current, base open. Collector cutoff current, circuit between base and emitter. Emitter cutoff current, collector open. Common-emitter static forward current transfer ratio. Base-emitter voltage, dc. Collector-emitter voltage, dc. Collector-emitter voltage, base open. Collector-emitter voltage, emitter open. Emitter-base voltage, dc. Emitter-base voltage, collector open. LDS-0022-2, Rev. 1 (111617) (c)2011 Microsemi Corporation Page 2 of 6 2N3439U4 thru 2N3440U4 ELECTRICAL CHARACTERISTICS @ TA = +25C, unless otherwise noted. OFF CHARACTERISTICS Parameters / Test Conditions Collector-Emitter Breakdown Voltage I C = 10 mA R BB1 = 470 ; V BB1 = 6 V L = 25 mH (min); f = 30 - 60 Hz Collector-Emitter Cutoff Current V CE = 300 V V CE = 200 V Emitter-Base Cutoff Current V EB = 7.0 V Collector-Emitter Cutoff Current V CE = 450 V, V BE = -1.5 V V CE = 300 V, V BE = -1.5 V Collector-Base Cutoff Current V CB = 360 V V CB = 250 V V CB = 450 V V CB = 300 V Symbol Min. 2N3439U4 2N3440U4 V (BR)CEO 350 250 2N3439U4 2N3440U4 I CEO 2.0 2.0 A I EBO 10 A I CEX 5.0 5.0 A 2N3439U4 2N3440U4 2N3439U4 2N3440U4 2N3439U4 2N3440U4 Max. V 2.0 2.0 5.0 5.0 I CBO Unit A ON CHARACTERISTICS (1) Parameters / Test Conditions Forward-Current Transfer Ratio I C = 20 mA, V CE = 10 V I C = 2.0 mA, V CE = 10 V I C = 0.2 mA, V CE = 10 V Collector-Emitter Saturation Voltage I C = 50 mA, I B = 4.0 mA Base-Emitter Saturation Voltage I C = 50 mA, I B = 4.0 mA Symbol h FE Min. Max. 40 30 10 160 Unit V CE(sat) 0.5 V V BE(sat) 1.3 V Unit DYNAMIC CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Magnitude of Common Emitter Small-Signal ShortCircuit Forward Current Transfer Ratio I C = 10 mA, V CE = 10 V, f = 5.0 MHz |h fe | 3.0 15 Forward Current Transfer Ratio I C = 5.0 mA, V CE = 10V, f = 1.0 kHz h fe 25 Output Capacitance V CB = 10 V, I E = 0, 100 kHz f 1.0 MHz C obo 10 pF Input Capacitance V CB = 5.0 V, I E = 0, 100 kHz f 1.0 MHz C ibo 75 pF (1) Pulse Test: Pulse Width = 300 s, duty cycle 2.0%. LDS-0022-2, Rev. 1 (111617) (c)2011 Microsemi Corporation Page 3 of 6 2N3439U4 thru 2N3440U4 ELECTRICAL CHARACTERISTICS @ TA = +25C, unless otherwise noted. (continued) SWITCHING CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Unit Turn-On Time V CC = 200 V; I C = 20 mA, I B1 = 2.0 mA t on 1.0 s Turn-Off Time V CC = 200 V; I C = 20 mA, I B1 = -I B2 = 2.0 mA t off 10 s IC - COLLECTOR CURRENT (mA) SAFE OPERATING AREA (See graph below and reference MIL-STD-750, method 3053) DC Tests T C = +25 C, 1 Cycle, t = 1.0 s Test 1 V CE = 5.0 V, I C = 1.0 A Both Types Test 2 V CE = 350 V, I C = 14 mA 2N3439U4 Test 3 V CE = 250 V, I C = 20 mA 2N3440U4 V CE - COLLECTOR TO EMITTER VOLTAGE (V) Maximum Safe Operating Area (continuous dc) LDS-0022-2, Rev. 1 (111617) (c)2011 Microsemi Corporation Page 4 of 6 2N3439U4 thru 2N3440U4 dc Operation Maximum Rating (W) GRAPHS o TC ( C) (Case) FIGURE 1 Temperature-Power Derating Curve THETA (oC/W) NOTES: Thermal Resistance Junction to Case = 8.0 oC/W o Max Finish-Alloy Temp = 175 C TIME (s) FIGURE 2 Maximum Thermal Impedance NOTE: T C = +25 C, Thermal Resistance R JC = 8.0 C/W LDS-0022-2, Rev. 1 (111617) (c)2011 Microsemi Corporation Page 5 of 6 2N3439U4 thru 2N3440U4 PACKAGE DIMENSIONS NOTES: 1. 2. 3. Dimensions are in inches. Millimeter equivalents are given for general information only. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. LDS-0022-2, Rev. 1 (111617) Ltr Dimensions Inches Millimeters Min Max Min Max BL BW CH LH LW1 LW2 LL1 0.215 0.145 0.049 5.46 3.68 1.24 0.135 0.047 0.085 0.225 0.155 0.075 0.020 0.145 0.057 0.125 3.43 1.19 2.16 5.72 3.94 1.91 0.51 3.68 1.45 3.17 LL2 0.045 0.075 1.14 1.90 LS1 0.070 0.095 1.78 2.41 LS2 Q1 Q2 0.035 0.030 0.020 0.048 0.070 0.035 0.89 0.76 0.51 1.21 1.78 0.89 TERMINAL 1 COLLECTOR 2 3 BASE EMITTER (c)2011 Microsemi Corporation Page 6 of 6