Ud DE ps?soa. OOLP4LL 3 i 3875081 G E SOLID STATE O1E 17411 D Yo 73-79 General-Purpose Power Transistors File Number 675 2N5954, 2N5955, 2N5956 Silicon P-N-P Medium-Power Transistors . General-Purpose Types for Switching Applications tx (FLANGE) TERMINAL DESIGNATIONS Features: = Low saturation voltages us Maximum-safe-area-of-operation curves High gain at high current 8 92CS-27516 JEDEC TO-213AA iF RCA-2N5954, 2N5955, and 2N5956e are multiple-epitaxial p-n-p transistors, All are supplied In the JEDEC TO-213AA package. All these transistors are Intended for a wide variety of medium-power switching and amplifier applications, such as series regulators and output stages of high-fidelity amplifiers. Formerly RCA Dev. Nos. TA7264, TA7265, and TA7266, respectively. MAXIMUM RATINGS, Absolute-Maximum Values: 2N5954 2N5955 2N5956 Vopa scssescccones fevveeee beeeeepeeeeas Deepen tame t pet tenreseeeneaee -90 -70 -50 v Vcex(sus) Voc H 1.5 V, Roe= 100 Qc ececececrscereteseseerecauceventeeserereat -90 -70 -50 v Vcea(Sus) Rae = 100 DQ errsceseencencenes deere decree ccceesaseecesiornenee os -B5 -65 45 v Veeo(SUS}.:eresecsneas CON d etek e een e een ene e ene e senses sadiensenener ' -80 -60 -40 v "VeDo ccertuseerseeneanee evaeteceessettase vee eccnreeeueenveneeags see 6 +5 Vv Noreen rn ener emcee ene een eee ane Eee eed ea eH One eH rete ben ebna tenes tes 46 6 oe] A Tassees peseeaeenes pe eeeeeusanes seveenecarssaeueesesensees peneeserees : -2 2 -2 A "Py At Te up to 25C wa ceeeees Pee eemeatneveceeeeeeueepaneeeonsnenes vee 40 40 . 40 i Ww At Te above 26C ....005 Cenceenecceneeeeags cece nneneecneeetenane ._ See Figs, and? "Tar Tatg veccncccscaccccccarceueeseecateneunes aeanes peseverecaseusesas --___. -65 to +200 S Te At distances = 1/32 In. (0.8 mm) from seating plane for 109 MAX.c.ccesseraeene dba caeaseeneencetacsnesees 235 S * JEDEC types In accordance with JEDEC registration data format JS-6-ROF-2. me ee 415L DE Bp s475uas oonryne 5 i 3875081 G E SOLID STATE General-Purpose Power Tranststors 2N5954, 2N5955, 2N5956 O1E 17412 ELECTRICAL CHARACTERISTICS, At Case Temperature (Tc) = 25C Untess Otherwise Specifled TEST CONDITIONS LIMITS CHARACTERISTIC VOLTAGE CURRENT 2N5958 2N5955 2N5954 UNITS Vide Adc Vce | Vee le ln | MIN, | MAX. | MIN, | MAX. | MIN. | MAX. lcen -35 _ - - -100 - - - ~ Ree = 1009 55 ~ _ _ - _ | -100 | uA -75 _ - ~ _ - _ _ | -100 Ioex -45 15 ~_ _ | -t00 | Ree = 1002 -65 15 - _ _ - |-100 | - pA -85 15 _ _ = | -100 i Ree = 1009, -4 15 _ _ _ -2 _ _ _ _ ' To = 150C -65 15 _ - _ _ -2 _ - mA -85 15 _ _ - - - -2 leeo -25 _ _ - -_ -1 = _ - _ -45 - - _ - ~ _ 1 -_ mA -65 _ ~ _ _ _ - ~ = 1 leso - 5 = _ -0.1 _ -0.1 _- 0.1 mA hee 4 - 38 ~ 20 100 _ _ _ -4 |-258) - 20 100 _ _ -4 _ -28 _ _ _ 20 100 ! -4 - -68 5 _ 5 _ 5 = Vceo(sus) = _ 0.18 = -490 _ 600 -gob _ Vecer(sus) Ree = 100 0 - _ O18 | -45b -_ -65b - -e5b _ V Voex(sus) - 145 | -o18] ~ | -sob | | -7ob | | -cob] Ase= 1000 Vee 4 - -38 _ -2 _ _ _ -4 |-25@}] - - - -2 - - Vv -4 -28 ~ - - _ _ -2 Vee(sat) ~ _ -38 | -0.3 - -1 _ - - - | -258 | 025 | - -1 _ - v _ -28 | -0.2 _ - 1 | Hee| fe 1MHz 4 1 - 5 - 5 - 5 _ Ne -4 - | os] 25 = 28 25 - (= 1kHz Rbsc _ - _ - 4.3 _ 4.3 43 | C/W In accordance with JEDEC registration data format JS-6-ROF-2. Pulsed, pulse duration = 300 ys, duty factor = 1.8%. BCAUTION: Sustaining voltage Vceo(sus), Vcen(sus), and Vcex(sus) MUST NOT be measured on a curve tracer. 416 nossa Fel?wet yet mn ete ee UL DE fpse7soal 0017413 7 f 3875081 GE SOLID STATE SE a7aTs > PSST General-Purpose Power Transistors Fig, 4 - Typical dc beta characteristics for 2N5954-2N5956. COLLECTOR CURRENT (I)A 2N5954, 2N5955, 2N5956 Hh | COLLECTOR-TO-EMITTER VOLTAGE tce)-- BACS~ 2604 AE Fig. 1 - Maximum operating areas for ail types. PERCENTAGE OF RATED CURRENT ATSPECIFIED VOLTAGE EFFECTIVE CASE TEMP, OR CASE TEMP, {Tere OR To18C vecs-21992 Fig. 2- Current derating chart for all types. | 70.01 0.1 a 10 . COLLECTOR CURRENT (I)-A 2C8~18008 TO-EMITTEA VOLTAGE (Voge) ay CASE TEMPERATURE (To 1s 25C GAIN-BANOWIOTH PRODUCT (fy}MHE OE ' COLLECTOR CURRENT (1]~A 2208-22476 Fig. 3 - Typical gain-bandwidth product for all types. CASE TEMPERATURE (T.) . a i w z F Zo =z 5 & & o 0 1 2 -3 =4 COLLECTOR CURRERT {fc} & SESS Fig.5-Typical saturated switching characteristics for 2N5954-2N5956. 417Ee Th DE 28 7suas OOL?4LY 4 Tr "3875081 GE SOLID STATE General-Purpose Power Iransistors 2N5954, 2N5955, 2N5956 Teepe nee Vents Vecr-30 O1E 17414 0 T3319 | INPUT: oureuT To HEWLETT-PACKARD Oe EL . 5 + 4 MODEL Ho.2144 OR TEATRO On wis TIME EQUIVALENT s EQUIVALENT 4 go 5 INPUT 3 1 WAVE FORM . i Be | Ly | a 1 been conomion'e| | time > z Voetsot} | = = - 90% IMPUT FROM tam C4 PULSE GENERATOR e y i (PULSE DURATIONS 1& |-soyv . 2048: REP, RATES Sy _ ' The) * ADJUST Bg FOR ip) AND Rc FOR fe eg ue wi t OUTPUT 41g AND Ip, MEASURED WITH TEKTROWIX CURRENT PROBE Bs ig! Oo ary WAVE FORM PEOI9 AND TYPE 13 AMPLIFIER, OR EQUIVALENT 48 |. TURN: Oe | GE 3 TIME TINE B2CS-ISGIDAL eaca-2dese Fig. 6 - Circuit used to measure saturated switching times for 2N5954-2N5956, TO+ EMITTER VOLTAGE BASE-10- EMITTER VOLTAGE (VagI $2LS-S55181 Fig. 8 - Typical input characteristics for all types. i 2 5 g 3 g g 8 Fig. 7 - Oscilloscope display for measurement of switching times for 2N5954-2N5956, COLLECTOR CURRENT (T)-A COLLECTOR -T0-EMITTER VOLTAGE (vce) V PRS -3527AL Fig. 9 - Typical output characteristics for all types. 15 BASE*10-EMITTER VOLTAGE (Vee) FAL S5Z980 Fig. 10 - Typical transfer characteristics for all types. - 418 | 0957 E-14