SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE BVcEO hee VcE (sat) fr Cop @ 10V Ic Pr Device Type @10mA Typical 1MHz Continuous @ 25C (V) Min. Max. @ Ic(mA)|Vc_e (V) Max. @ I{mA) fg(mA) (MHz) Typical (Pe) = (mA) (mw) 2N3903 40 300 2N3904 40 350 2N3905 40 250 2N3906 40 300 2N4123 30 300 2N4124 _ 25 350 2N4125 / 30 250 2N4126 | 25 300 2N4400 40 225 2N4401_ | 40 275 2N4402 40 300 2N4403 40 350 2N4409 50 100 2N4410 100 2N5088 75 2N5089 75 2N5219 2N5220 2N5221 2N5223 2N5225 2N5226 2N5227 GES929 GES930 GES2221 GES2221A GES2222 GES2222A GES2483 GES2906 GES2907 GES5305 GES5306 GES5307 GES5308 GES5368 GES5369 GES5370 GES5371 GES5372 GES5373 GES5374 103Silicon Transistor Lol, The General Electric 2N5221 is a Silicon PNP Planar Epitaxial Passivated Transistor designed for general purpose amplifier applications. PNP Polarities are Negative: Observe Proper Bias. | it Ly $b absolute maximum ratings: (T, = 25C unless otherwise specified) 3 tel !. EMITTER Voltages 2. BASE Collector to Emitter Vero 15 Volts TO-92 3. COLLECTOR Collector to Base Vepo 15 Volts Emitter to Base VeEBo 3 Volts ? Current : AB2/016{019| 3 Collector Ic 500 mA 180/41 90). i 67 J Dissipation Total Power Ta < 25C Py 350 mW Derating Factor Ta > 25C Py 2.8 mW/C Total Power Tc < 25C Pr 1.0 Watt Derating Factor Te > 25C Pr 8.0 mW/C Temperature 1. THREE LEADS . 2.CONTOUR OF PACKAGE UNCONTROLLED OUTSIDE Operating Ty -55to+150 C THIS SIDE. . 3. (THREE LEADS) b2 APPLIES BETWEEN Ly AND Lo. Storage , , Tstg -55 to +150 of b APPLIES BETWEEN Lo AND 12.70 MM (.500") Lead (1/16 + 1/32 from T +230 Cc FROM THE SEATING PLANE. DIAMETER IS UN- CONTROLLED IN L, AND BEYOND I2.70MM (.500") case for 10 sec.) FROM SEATING PLANE. *electrical characteristics: (T, = 25C unless otherwise specified) Static Characteristics SYMBOL MIN. MAX. UNITS Collector-Emitter Breakdown Voltage (Uc = 10mA, Ip = 0) TVpR)cEO 15 ~ Volts Collector-Base Breakdown Voltage (Ic = 100 uA, Ip = 0) VipRr)cBO 15 _ Volts Emitter-Base Breakdown Voltage (Ig = 100 BA, Ic = 0) Vipr)EBO 3.0 _ Volts Collector Cutoff Current (VCB = 10V, Ig = 0) Icpo _ 100 nA Emitter Cutoff Current (Ver = 3.0V, Ie = 0) lgBo _ 100 nA DC Current Gain (Ic = 10 mA, Vor 10V) Ther 25 _ Collector-Emitter Saturation Voltage (Ic = 150mA, Ip = 15 mA) TVcK(sat) ~ 0.5 Volts Base-Emitter Saturation Voltage (ic = 150mA, Ip = 15 mA) TVpE(sat) 1.1 Volts Dynamic Characteristics Current-Gain Bandwidth Product (ic = 20mA, Vor = 10V, f = 20 MHz) fr 100 MHz Collector-Base Capacitance (Vcp = 5.0V, Ip = 0, f = 1.0 MHz) Cop _ 15 pF Small Signal Current Gain (ic = 50mA, Ver = 10V, f = 1.0 kHz) hee 30 1800 +Pulse Test: Pulse width = 300 us, duty cycle = 2%. *Indicates JEDEC Registered Data. 469