BZX84C Series
Zener diode
Features
1. High reliability
2. Wide voltage range available
3. Low reverse current level
4. Small outline package for space savings
5. Surface mount package
Applications
Voltage stabilization
Absolute Maximum Ratings
Tj=25℃
Parameter Test Conditions Type Symbol Value Unit
Power dissipation Tamb≤75℃ P
V 410 mW
Z-current IZ PV/VZ mA
Junction temperature Tj 150 ℃
Storage temperature range Tstg -55~+150 ℃
Maximum Thermal Resistance
Tj=25℃
Parameter Test Conditions Symbol Value Unit
Junction ambient I=9.5mm(3/8”) TL=constant RthJA 300 K/W
Electrical Characteristics
Tj=25℃
Parameter Test Conditions Type Symbol Min Typ Max Unit
Forward voltage IF=10mA VF 0.9 V
BZX84C Series
Type VZnom IZT for VZT & rzjT rzjK at I
ZK IR & IR at VR TKVZ
BZX84C
Marking
V mA V1) Ω Ω mA μA V %/K
2V4 Z11 2.4 5 2.2~2.6 <100 <600 1 <50 1 -0.09~-0.06
2V7 Z12 2.7 5 2.5~2.9 <100 <600 1 <20 1 -0.09~-0.06
3V0 Z13 3.0 5 2.8~3.2 <95 <600 1 <10 1 -0.08~-0.05
3V3 Z14 3.3 5 3.1~3.5 <95 <600 1 <5 1 -0.08~-0.05
3V6 Z15 3.6 5 3.4~3.8 <90 <600 1 <5 1 -0.08~-0.05
3V9 Z16 3.9 5 3.7~4.1 <90 <600 1 <3 1 -0.08~-0.05
4V3 W9 4.3 5 4.0~4.6 <90 <600 1 <3 1 -0.06~-0.03
4V7 Z1 4.7 5 4.4~5.0 <80 <500 1 <3 2 -0.05~+0.02
5V1 Z2 5.1 5 4.8~5.4 <60 <480 1 <2 2 -0.02~+0.02
5V6 Z3 5.6 5 5.2~6.0 <40 <400 1 <1 2 -0.05~+0.05
6V2 Z4 6.2 5 5.8~6.6 <10 <150 1 <3 4 0.03~0.06
6V8 Z5 6.8 5 6.4~7.2 <15 <80 1 <2 4 0.03~0.07
7V5 Z6 7.5 5 7.0~7.9 <15 <80 1 <1 5 0.03~0.07
8V2 Z7 8.2 5 7.7~8.7 <15 <80 1 <0.7 5 0.03~0.08
9V1 Z8 9.1 5 8.5~9.6 <15 <100 1 <0.5 6 0.03~0.09
10 Z9 10 5 9.4~10.6 <20 <150 1 <0.2 7 0.03~0.1
11 Y1 11 5 10.4~11.6 <20 <150 1 <0.1 8 0.03~0.11
12 Y2 12 5 11.4~12.7 <25 <150 1 <0.1 8 0.03~0.11
13 Y3 13 5 12.4~14.1 <30 <170 1 <0.1 8 0.03~0.11
15 Y4 15 5 13.8~15.6 <30 <200 1 <0.05 10.5 0.03~0.11
16 Y5 16 5 15.3~17.1 <40 <200 1 <0.05 11.2 0.03~0.11
18 Y6 18 5 16.8~19.1 <45 <225 1 <0.05 12.6 0.03~0.11
20 Y7 20 5 18.8~21.2 <55 <225 1 <0.05 14 0.03~0.11
22 Y8 22 5 20.8~23.3 <55 <250 1 <0.05 15.4 0.04~0.12
24 Y9 24 5 22.8~25.6 <70 <250 1 <0.05 16.8 0.04~0.12
27 Y10 27 5 25.1~28.9 <80 <300 1 <0.05 18.9 0.04~0.12
30 Y11 30 5 28~32 <80 <300 1 <0.05 21 0.04~0.12
33 Y12 33 5 31~35 <80 <325 1 <0.05 23.1 0.04~0.12
36 Y13 36 5 34~38 <90 <350 1 <0.05 25.2 0.04~0.12
39 Y14 39 2.5 37~41 <130 <350 0.5 <0.05 27.3 0.04~0.12
43 Y15 43 2.5 40~46 <150 <375 0.5 <0.05 30.1 0.04~0.12
47 Y16 47 2.5 44~50 <170 <375 0.5 <0.05 32.9 0.04~0.12
51 Y17 51 2.5 48~54 <180 <400 0.5 <0.05 35.7 0.04~0.12
56 Y18 56 2.5 52~60 <200 <425 0.5 <0.05 39.2 0.04~0.12
62 Y19 62 2.5 58~66 <215 <450 0.5 <0.05 43.4 0.04~0.12
68 Y20 68 2.5 64~72 <240 <475 0.5 <0.05 47.6 0.04~0.12
75 Y21 75 2.5 70~79 <255 <500 0.5 <0.05 52.5 0.04~0.12
BZX84C Series
Characteristics (Tj=25℃ unless otherwise specified)
Figure 1. Diode Capacitance vs. Z-voltage Figure 2. Typical Change of Working Voltage Vs.
Junction Temperature
Figure 3. Typical Change of Working Voltage under
Operating Conditions at Tamb=25℃
Figure 4. Temperature Coefficient of Vz vs. Z-Voltage
Figure 5. Forward Current vs. Forward Voltage Figure 6. Z-Current vs. Z-Voltage
BZX84C Series
Figure 7. Z-Current vs. Z-Voltage Figure 8. Differential Z-Resistance Vz vs. Z-Voltage
Figure 9. Thermal Response
BZX84C Series
Dimensions
Style 8:
PIN
1. Anode
2. No connection
3. Cathode
SOT-23 Footprint
Notes:
1. Dimensioning and tolerance per
ANSI Y14.5M, 1982.
2. Controlling dimension: inch.
3. Maximum lead thickness includes lead finish
thickness. Minimum lead thickness is the
minimum thickness of base material.
