SENTECH CORP 56E D WMH 4439139 0002531 T5e MBSET 1N6073 FFO5 1N6074 FF10 SUPERFAST RECOVERY 1N6075 FF15 AXIALLEADED HERMETICALLY SEALED QUICK REFERENCE SUPERFAST RECTIFIER DIODE DATA Very low reverse recovery time * Vr =50- 150V Hermetically sealed in Metoxilite fused metal oxide * IF =1.8A * Low switching losses * tr = 30nS Low forward voltage drop Ve = 1.2V Soft, non-snap off, recovery characteristics ABSOLUTE MAXIMUM RATINGS (@ 25C unless otherwise specified) 1N6073 1N6074 1IN6075 . symbol | FOS FF10 FFI5 | Unit Working reverse voltage VRWM 50 100 150 Vv Repetitive reverse voltage VRRM 50 100 150 V : Average forward current IF(AV) 1.8 A (@ 55C, lead length = 0.375") Repetitive surge current IFRM 14.0 > A (@ 55C, lead length = 0.375") Non-repetitive surge current IFSM 35.0 A (tp = 8.3ms, @ Vr & Tjmax) Storage temperature range TsTG _ -65 to +150 C Operating temperature range Top -65 to +150 C MECHANICAL A These products are qualified to 7 r MIL-S-19500/503. t GS They can be supplied fully released as JAN, JANTX, and JANTXV versions. ! . These products are qualified in Europe | D 7 to DEF STAN 59-61 (PART 80)/029 | a ie available to F and FX levels. [ () b j NOTES: 1. LEAD DIAMETER UNCONTROLLED eK B OVER THIS REGION. lL Weight = 0 1340z DS-002 2-1 SEMTECH CORPORATIONSEMTECH CORP S6E D MM 8139139 0002532 999 M@ESET 1N6073 FFO5 1N6074 FF10 1N6075 FF15 SUPERFAST RECOVERY ELECTRICAL CHARACTERISTICS (@ 25C unless otherwise specified) Symbol | LN6073 1N6074 IN6075 | it y yee | FFOS FF10 FFI5 Average forward current max. (pcb mounted; Ta = 55C) for sine wave IF(AV) 08 -- A for square wave (d = 0.5) IF(AV) __ 0.90 - A Average forward current max. TL = 70C; L =0". IF(AV) + 3.0 TL = 55C; L = 3/8" for sine wave IF(AV) + 1.7 for square wave IF(AV) 1.8 A It for fusing (t = 8.3mS) max. rt 50 _> AS Forward voltage drop max. @ Ip = 1.5A, Tj = 25C VE __ 12 Vv Reverse current max. @ VrwM, Tj = 25C IR ._ 1.0 HA @ VrwM, Tj = 100C IR - 50 WA Reverse recovery time trr _, 310-- ns 0.5A Ir, 1.0A Ir, 0.25A Irr. Junction capacitance typ. CG _ 282 --- pF @ VR =5V,f= 1MHz THERMAL CHARACTERISTICS Symbol | LN6073 1N6074 IN6075 | nit yee | FFOS FF10 FFI5 | ~ Thermal resistance - junction to lead Lead length = 0.375" Rey 46 C/W Lead length = 0.0" RgjL 13 C/W Thermal resistance - junction to amb. | Rea 95 C/W on 0.06" thick pcb. 1 oz. copper. SEMTECH CORPORATION 2-2 DS-002SEMTECH CORP S8E D MM 41439139 0002533 &25 MESET 1N6073 FFOS5 1N6074 FF10 1N6075 FF15 SUPERFAST RECOVERY 10.0 Ip (Amps) Pr { watts) Max @T; = 150C Max @Tj = 25C 0 0 60 120 180 Vr (Volts) Ti CC) Fig 1. Forward voltage drop as a Fig 2. Maximum power versus lead temperature. function of forward current. 10? C, (pF) 10 oO 10 10 10 10 10 10? 10 1 t Gees) Vr (Volts) Fig 3. Transient thermal impedance characteristic. Fig 4. Typical junction capacitance as a function of reverse voltage. DS-002 2-3 SEMTECH CORPORATIONSENTECH CORP S8E D MM 81391359 0002534 761 MSET 1N6073 FFO5 1N6074 FF1i0 1N6075 FF15 SUPERFAST RECOVERY 10.0 a = form factor = Irews) F(AV) Pr (Watts) 6.0 4.0 2.0 0 1.0 2.0 4.0 5.0 Ipavy (Amps) Fig 5. Forward power dissipation as a function of forward current, for sinusoidal operation. 15.0 301 12.0 Irrm (Amps) 3.0 10? = 10 10 ' 19 10! 10? t (Secs) Fig 7. Maximum repetitive forward current as a function of pulse width at 55C; Ros = 45 C/W; Vawn during | - 5. SEMTECH CORPORATION 10.0 Tt batt 8.0 Current Waveform Pr (Watts) 6.0 4.0 5=1 (DC) 05 0.2 0.1 2.0 0 Trav) (Amps) Fig 6. Forward power dissipation as a function of forward current, for square wave operation. 8.0 Irrm 6.0 (Amps) 4.0 2.0 0 t (Secs) Fig 8. Maximum repetitive forward current as a function of pulse width at 100C; Rey = 110 C/W; Vawn during | - 5. 2-4 DS-002