FSB560 / FSB560A — NPN Low-Saturation Transistor
Publication Order Number:
FSB560A/D
© 2001 Semiconductor Components Industries, LLC.
December-2017, Rev. 2
FSB560 / FSB560A
NPN Low-Saturation Transistor
Features
• These devices are designed with high-current gain and low-saturation
voltage with collector currents up to 2 A continuous.
Ordering Information
Absolute Maximum Ratings(1),(2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. ON Semiconductor should be consulted on applications involving pulsed or low-
duty-cycle operations.
Part Number Marking Package Packing Method
FSB560 560 SSOT 3L Tape and Reel
FSB560A 560A SSOT 3L Tape and Reel
Symbol Parameter Value Unit
VCEO Collector-Emitter Voltage 60 V
VCBO Collector-Base Voltage 80 V
VEBO Emitter-Base Voltage 5 V
ICCollector Current - Continuous 2 A
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C
B
E
C
SuperSOTTM-3 (SOT-23)
FSB560 / FSB560A — NPN Low-Saturation Transistor
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Thermal Characteristics(3)
Values are at TA = 25°C unless otherwise noted.
Note:
3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Note:
4. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%
Symbol Parameter Max. Unit
PD
Total Device Dissipation 500 mW
Derate Above 25°C 4 mW/°C
RθJA Thermal Resistance, Junction-to-Ambient 250 °C/W
Symbol Parameter Conditions Min. Max. Unit
BVCEO Collector-Emitter Breakdown Voltage IC = 10 mA, IB = 0 60 V
BVCBO Collector-Base Breakdown Voltage IC = 100 μA, IE = 0 80 V
BVEBO Emitter-Base Breakdown Voltage IE = 100 μA, IC = 0 5 V
ICBO Collector Cut-Off Current VCB = 30 V, IE = 0 100 nA
VCB = 30 V, IE = 0, TA = 100°C 10 μA
IEBO Emitter Cut-Off Current VEB = 4 V, IC = 0 100 nA
hFE DC Current Gain(4)
IC = 100 mA, VCE = 2 V 70
IC = 500 mA, VCE = 2 V FSB560 100 300
FSB560A 250 550
IC = 1 A, VCE = 2 V 80
IC = 2 A, VCE = 2 V 40
VCE(sat) Collector-Emitter Saturation
Voltage(4)
IC = 1 A, IB = 100 mA 300
mV
IC = 2 A, IB = 200 mA FSB560 350
FSB560A 300
VBE(sat) Base-Emitter Saturation Voltage(4) IC = 1 A, IB = 100 mA 1.25 V
VBE(on) Base-Emitter On Voltage(4) IC = 1 A, VCE = 2 V 1 V
Cobo Output Capacitance VCB = 10 V, IE = 0, f = 1.0 MHz 30 pF
fTTransition Frequency IC = 100 mA, VCE = 5 V,
f = 100 MHz 75 MHz
FSB560 / FSB560A — NPN Low-Saturation Transistor
Typical Performance Characteristics
Figure 1. Base-Emitter Saturation Voltage
vs. Collector Current Figure 2. Base-Emitter On Voltage
vs. Collector Current
Figure 3. Collector-Emitter Saturation Voltage
vs. Collector Current Figure 4. Input / Output Capacitance
vs. Reverse Bias Voltage
Figure 5. Current Gain vs. Collector Current Figure 6. Current Gain vs. Collector Current
0.001 0.01 0.1 1 10
0.2
0.4
0.6
0.8
1
1.2
1.4
I - COLLECTOR CURRENT (A)
V -BASE-EMITTER SATURATION VOLTAGE(V)
C
BESAT
25 ° C
- 40 °C
125 °C
β = 10
0.0001 0.001 0.01 0.1 1 10
0.2
0.4
0.6
0.8
1
1.2
1.4
I - COLLECTOR CURRENT (A)
V - BASE-EMITTER ON VOLTAGE (V)
C
BEON
25 °C
- 40 °C
125 °C
V = 2.0V
ce
0.001 0.01 0.1 1 10
0
0.2
0.4
0.6
0.8
I - COLLECTOR CURRENT (A)
V - COLLECTOR-EMITTER VOLTAGE (V)
C
CESAT
- 40°C
25°C
125°C
β = 10
0.1 0.2 0.5 1 2 5 10 20 50 1 00
0
50
100
150
200
250
300
350
400
450
V - COLLECTOR VOLTAGE (V)
CAPACITANCE (pf)
CE
f = 1.0 MHz
C
ibo
C
obo
0.001 0.010 0.100 1.000 10.000
0
100
200
300
400 FSB560
-40oC
VCE = 2 V
TA=150oC
25oC
hFE- DC CURRENT GAIN
IC- COLLECTOR CURR EN T [A]
0.001 0.010 0.100 1.000 10.000
0
100
200
300
400
500
600
700 FSB560A
-40oC
VCE = 2 V
TA=125oC
25oC
hFE- DC CURRENT GAIN
IC- COLLECTOR CURRENT [A]
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FSB560 / FSB560A — NPN Low-Saturation Transistor
Physical Dimensions
Figure 7. MOLDED PACKAGE, SUPERSOT, 3-LEAD
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