P01xxxA/B
January 1995
SENSITIVE GATE SCR
Symbol Parameter Value Unit
IT(RMS) RMS on-state current
(180°conductionangle) Tl= 55°C 0.8 A
IT(AV) Meanon-statecurrent
(180°conductionangle) Tl= 55°C 0.5 A
ITSM Non repetitivesurge peak on-statecurrent
(Tjinitial= 25°C) tp =8.3 ms 8 A
tp =10 ms 7
I2tI2t Value for fusing tp =10 ms 0.24 A2s
dI/dt Critical rate of rise of on-state current
IG=10mA di
G/dt =0.1A/µs. 30 A/µs
Tstg
TjStorageand operatingjunctiontemperaturerange - 40, +150
- 40, +125 °C
Tl Maximum lead temperaturefor soldering during 10sat
2mm from case 260 °C
ABSOLUTE RATINGS (limitingvalues)
TO92
(Plastic)
P01xxxA
IT(RMS) =0.8A
VDRM = 100V to 400V
Low IGT <1µA maxto <200µA
FEATURES
Symbol Parameter Voltage Unit
ABCD
V
DRM
VRRM Repetitivepeak off-statevoltage
Tj=125°CR
GK =1KΩ100 200 300 400 V
The P01xxxA/B series of SCRs uses a high
performance planar PNPN technology. These
parts are intended for general purpose
applicationswhere lowgate sensitivity is required.
DESCRIPTION RD26
(Plastic)
P01xxxB
K
GA
A
GK
1/5
PG (AV)= 0.1W PGM =2 W (tp = 20µs) IGM =1 A (tp = 20 µs)
GATE CHARACTERISTICS (maximum values)
Symbol Parameter Value Unit
Rth(j-a) Junctionto ambient 150 °C/W
Rth(j-l) Junctionto leads for DC 80 °C/W
THERMAL RESISTANCES
Symbol Test Conditions Sensitivity Unit
02 09 11 15 18
IGT VD=12V (DC) RL=140ΩTj= 25°C MIN 4 15 0.5 µA
MAX 200 1 25 50 5
VGT VD=12V (DC) RL=140ΩTj= 25°C MAX 0.8 V
VGD VD=VDRM RL=3.3kΩ
RGK =1KΩTj= 125°C MIN 0.1 V
VRGM IRG =10µA Tj= 25°C MIN 8 V
tgd VD=VDRM ITM=3xI
T(AV)
dIG/dt = 0.1A/µsI
G
= 10mA Tj= 25°C TYP 0.5 µs
IHIT= 50mA RGK =1KΩTj= 25°C MAX 5 mA
ILIG=1mA RGK =1KΩTj= 25°C MAX 6 mA
VTM ITM= 1.6A tp= 380µsTj= 25°C MAX 1.93 V
IDRM
IRRM VD=VDRM RGK =1KΩ
V
R=VRRM Tj= 25°C MAX 1 µA
Tj= 125°C MAX 100 µA
dV/dt VD=67%VDRM RGK =1KΩTj= 125°C MIN 25 25 50 100 30 V/µs
tq ITM=3xI
T(AV)V
R
=35V
dI/dt=10A/µs tp=100µs
dV/dt=10V/µs
VD= 67%VDRM RGK =1KΩ
Tj= 125°C MAX 200 µs
ELECTRICALCHARACTERISTICS
ORDERING INFORMATION
P0102AA
SCRPLANAR
CURRENT
PACKAGES:
A =TO92 B = RD26
VOLTAGE
SENSITIVITY
P01xxxA/B
2/5
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
0
0.2
0.4
0.6
0.8
1P (W)
360 O
= 180o
= 120o
=90
o
=60
o
=30
o
DC
I (A)
T(AV)
Fig.1 : Maximum average power dissipation ver-
sus averageon-state current.
0 102030405060708090100110120130
0
0.2
0.4
0.6
0.8
1I (A)
T(AV)
= 180o
DC
Tlead ( C)
o
Fig.3 : Averageon-state current versus lead tem-
perature.
Igt
Ih
10.0
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
-40 -20 0 20 40 60 80 100 120 140
Igt[Tj]
Igt[Tj=25 C]
oIh[Tj]
Ih[Tj=25 C]
o
Tj( C)
o
Fig.5: Relative variationof gatetriggercurrent and
holding current versus junctiontemperature.
0 20406080100120140
0
0.2
0.4
0.6
0.8
1-45
-65
-85
-105
-125
P (W) Tlead ( C)
o
Rth(j-l)
Rth(j-a)
Tamb ( C)
o
Fig.2 : Correlation between maximum average
power dissipation and maximum allowable tem-
perature (Tamb and Tlead).
1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
0.01
0.10
1.00 Zth(j-a)/Rth(j-a)
tp(s)
Fig.4 : Relative variation of thermal impedance
junctionto ambient versus pulse duration.
1 10 100 1,000
0
1
2
3
4
5
6
7
8Tj initial = 25 C
o
Number of cycles
I (A)
TSM
Fig.6 : Non repetitivesurge peak on-state current
versusnumber ofcycles.
P01xxxA/B
3/5
110
0.1
1
10
100 I (A). I2t(A
2s)
TSM
Tj initial = 25 C
o
ITSM
tp(ms)
I2t
Fig.7 : Non repetitive surge peak on-state current
for a sinusoidal pulse with width : tp ≤10ms, and
correspondingvalue ofI2t.
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
0.1
1
10 I (A)
TM
Tj initial
25 C
o
Tj max
V (V)
TM
Tj max
Vto =0.95V
Rt =0.600
Fig.8 : On-statecharacteristics(maximum values).
1.0E+00 1.0E+01 1.0E+02 1.0E+03 1.0E+04 1.0E+05 1.0E+06
0.1
1.0
5.0
Ih(Rgk)
Ih(Rgk=1k )
Tj=25 C
o
Rgk( )
Fig.9 : Relativevariation of holding current versus
gate-cathoderesistance (typicalvalues).
P01xxxA/B
4/5
PACKAGE MECHANICAL DATA
TO92 (Plastic)
DF
a
E
B
A
C
REF. DIMENSIONS
Millimeters Inches
Typ. Min. Max. Typ. Min. Max.
A 1.35 0.053
B 4.7 0.185
C 2.54 0.100
D 4.4 4.8 0.173 0.189
E 12.7 0.500
F 3.7 0.146
a 0.45 0.017
Marking: typenumber
Weight : 0.2 g
PACKAGE MECHANICAL DATA
RD26 (Plastic)
D
G
a
E
45°
B
A
C
F
REF. DIMENSIONS
Millimeters Inches
Typ. Min. Max. Typ. Min. Max.
A 2.54 0.100
B 3.7 0.146
C 1.35 0.053
D 4.4 4.8 0.173 0.189
E 12.7 0.500
F 4.7 0.185
G 3.0 0.118
a 0.45 0.177
Marking: typenumber
Weight : 0.2 g
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patentsor other rights of third parties which may result from its use. No
license is granted by implication or otherwise underany patent or patent rightsof SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subjectto change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are notauthorized foruse as critical componentsin life support devices or systems withoutexpress
written approval of SGS-THOMSON Microelectronics.
1995SGS-THOMSON Microelectronics - All rights reserved.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan- Korea - Malaysia - Malta - Morocco -The Netherlands
Singapore - Spain- Sweden - Switzerland - Taiwan - Thailand - UnitedKingdom - U.S.A.
P01xxxA/B
5/5
