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© 2001
MOS INTEGRATED CIRCUIT
µ
µµ
µ
PD
44165084, 44165184, 44165364
18M-BIT QDRTMII SRAM
4-WORD BURST OPERATION
Document No. M15825EJ2V0DS00 (2nd edition)
Date Published April 2002 NS CP(K)
Printed in Japan
PRELIMINARY DATA SHEET
The mark
shows major revised points.
Description
The
µ
PD44165084 is a 2,097,152-word by 8-bit, the
µ
PD44165184 is a 1,048,576-word by 18-bit and th e
µ
PD44165364
is a 524,288-word by 36-bit s ynchro nous quad data rate static RAM fabricated with advanced CMOS technology us ing full
CMOS six-transistor memory cell.
The
µ
PD44165084,
µ
PD44165184 and
µ
PD44165364 integrates unique synchronous peripheral circu itry and a
burst counter. All input registers controlled by an in put clock pair (K and /K) and are latched on the positive edge of K
and /K.
These products are suitable for applications which require s ynchronous operat ion, high speed, lo w voltage, high density
and wide bit configuration.
These products are packaged in 16 5-pin PLASTIC FBGA.
Features
• 1.8 ± 0.1 V power supply and HSTL I/O
• DLL circuitry for wide output data valid window and future frequency scaling
• Separate independent read and write data ports with concurrent transactions
• 100% bus utilization DDR READ and W RITE operation
• Four-tick burst for reduced address frequency
• Two input clocks (K and /K) for precise DDR timing at clock rising edges only
• Two output clocks (C and /C) for precise flight time
and clock skew matching-clock and data deliver ed together to receiving device
• Internally self-timed write control
• Clock-stop capability with
µ
s restart
• User programmable impedence output
• Fast clock cycle time : 3.0 ns (333 MHz), 3.3 ns (300 MHz), 4.0 ns (250 MHz) , 5.0 ns (200 MHz) , 6.0 ns (167 MHz)
• Simple control logic for easy depth expansion
• JTAG boundary scan
2Preliminary Data Sheet M15825EJ2V0DS
µ
µµ
µ
PD44165084, 44165184, 44165364
Ordering Information
Part number Cycle Clock Organization Core Supply I/O Package
Time Frequency (word x bit) Voltage Interface
ns MHz V
µ
PD44165084F5-E30-EQ1 3.0 333 2 M x 8-bit 1.8 ± 0.1 HSTL 165-pin PLASTIC
µ
PD44165084F5-E33-EQ1 3.3 300 FBGA (13 x 15)
µ
PD44165084F5-E40-EQ1 4.0 250
µ
PD44165084F5-E50-EQ1 5.0 200
µ
PD44165084F5-E60-EQ1 6.0 167
µ
PD44165184F5-E30-EQ1 3.0 333 1 M x 18-bit
µ
PD44165184F5-E33-EQ1 3.3 300
µ
PD44165184F5-E40-EQ1 4.0 250
µ
PD44165184F5-E50-EQ1 5.0 200
µ
PD44165184F5-E60-EQ1 6.0 167
µ
PD44165364F5-E30-EQ1 3.0 333 512 K x 36-bit
µ
PD44165364F5-E33-EQ1 3.3 300
µ
PD44165364F5-E40-EQ1 4.0 250
µ
PD44165364F5-E50-EQ1 5.0 200
µ
PD44165364F5-E60-EQ1 6.0 167
3
Preliminary Data Sheet M15825EJ2V0DS
µ
µµ
µ
PD44165084, 44165184, 44165364
Pin Configurations (Marking Side)
/××× indicates active low signal.
165-pin PL ASTIC FBGA (13 x 15)
(Top View)
[
µ
µµ
µ
PD44165084F5-EQ1]
1234567891011
A/CQ VSS A/W/NW1/KNC/RAV
SS CQ
B NC NC NC A NC K /NW0 A NC NC Q3
CNC NC NC V
SS ANCAV
SS NC NC D3
DNC D4 NC V
SS VSS VSS VSS VSS NC NC NC
ENC NC Q4 V
DDQV
SS VSS VSS VDDQNC D2 Q2
FNC NC NCV
DDQV
DD VSS VDD VDDQNC NC NC
GNC D5 Q5 V
DDQV
DD VSS VDD VDDQNC NC NC
H/DLL V
REF VDDQV
DDQV
DD VSS VDD VDDQV
DDQV
REF ZQ
JNC NC NCV
DDQV
DD VSS VDD VDDQNC Q1 D1
KNC NC NC V
DDQV
DD VSS VDD VDDQNC NC NC
LNC Q6 D6 V
DDQV
SS VSS VSS VDDQNC NC Q0
MNC NC NC V
SS VSS VSS VSS VSS NC NC D0
NNC D7 NC V
SS AAAV
SS NC NC NC
P NC NC Q7 A A C A A NC NC NC
RTDOTCKAAA/CAAATMSTDI
A : Address inputs TMS : IEEE 1149.1 Test input
D0 to D7 : Data inputs TDI : IEEE 1149.1 Test input
Q0 to Q7 : Data outputs TCK : IEEE 1149.1 Clock input
/R : Read input TDO : IEEE 1149.1 Test output
/W : Write input VREF : HSTL input reference input
/NW0, /NW1 : Nybble Write data select VDD : Power Supply
K, /K : Input clock VDDQ : Power Supply
C, /C : Output clock VSS : Ground
ZQ : Output impedance matching NC : No connection
/DLL : DLL disable
Remark Refer to Package Drawing for the index mark.
4Preliminary Data Sheet M15825EJ2V0DS
µ
µµ
µ
PD44165084, 44165184, 44165364
165-pin PL ASTIC FBGA (13 x 15)
(Top View)
[
µ
µµ
µ
PD44165184F5-EQ1]
1234567891011
A/CQ V
SS NC /W /BW1 /K NC /R A VSS CQ
B NC Q9 D9 A NC K /BW0 A NC NC Q8
CNC NC D10 V
SS ANCAV
SS NC Q7 D8
DNC D11 Q10 V
SS VSS VSS VSS VSS NC NC D7
ENC NC Q11V
DDQV
SS VSS VSS VDDQNC D6 Q6
FNC Q12D12V
DDQV
DD VSS VDD VDDQNC NC Q5
GNC D13 Q13V
DDQV
DD VSS VDD VDDQNC NC D5
H/DLL V
REF VDDQV
DDQV
DD VSS VDD VDDQV
DDQV
REF ZQ
JNC NC D14V
DDQV
DD VSS VDD VDDQNC Q4 D4
KNC NC Q14V
DDQV
DD VSS VDD VDDQNC D3 Q3
LNC Q15D15V
DDQV
SS VSS VSS VDDQNC NC Q2
MNC NC D16 V
SS VSS VSS VSS VSS NC Q1 D2
NNC D17 Q16 V
SS AAAV
SS NC NC D1
PNC NC Q17 A A C A A NC D0 Q0
RTDOTCKAAA/CAAATMSTDI
A : Address inputs TMS : IEEE 1149.1 Test input
D0 to D17 : Data inputs TDI : IEEE 1149.1 Test input
Q0 to Q17 : Data outputs TCK : IEEE 1149.1 Clock input
/R : Read input TDO : IEEE 1149.1 Test output
/W : Write input VREF : HSTL input reference input
/BW0, /BW1 : Byte Write data select VDD : Power Supply
K, /K : Input clock VDDQ : Power Supply
C, /C : Output clock VSS : Ground
ZQ : Output impedance matching NC : No connection
/DLL : DLL disable
Remark Refer to Package Drawing for the index mark.
5
Preliminary Data Sheet M15825EJ2V0DS
µ
µµ
µ
PD44165084, 44165184, 44165364
165-pin PL ASTIC FBGA (13 x 15)
(Top View)
[
µ
µµ
µ
PD44165364F5-EQ1]
1234567891011
A/CQ V
SS NC /W /BW2 /K /BW1 /R NC VSS CQ
B Q27 Q18 D18 A /BW3 K /BW0 A D17 Q17 Q8
C D27 Q28 D19 VSS ANCAV
SS D16 Q7 D8
D D28 D20 Q19 VSS VSS VSS VSS VSS Q16 D15 D7
E Q29 D29 Q20 VDDQV
SS VSS VSS VDDQQ15 D6 Q6
F Q30 Q21 D21 VDDQV
DD VSS VDD VDDQD14 Q14 Q5
G D30 D22 Q22 VDDQV
DD VSS VDD VDDQQ13 D13 D5
H/DLL V
REF VDDQV
DDQV
DD VSS VDD VDDQV
DDQV
REF ZQ
J D31 Q31 D23 VDDQV
DD VSS VDD VDDQD12 Q4 D4
K Q32 D32 Q23 VDDQV
DD VSS VDD VDDQQ12 D3 Q3
L Q33 Q24 D24 VDDQV
SS VSS VSS VDDQD11 Q11 Q2
M D33 Q34 D25 VSS VSS VSS VSS VSS D10 Q1 D2
N D34 D26 Q25 VSS AAAV
SS Q10 D9 D1
P Q35 D35 Q26 A A C A A Q9 D0 Q0
RTDOTCKAAA/CAAATMSTDI
A : Address inputs TMS : IEEE 1149.1 Test input
D0 to D35 : Data inputs TDI : IEEE 1149.1 Test input
Q0 to Q35 : Data outputs TCK : IEEE 1149.1 Clock input
/R : Read input TDO : IEEE 1149.1 Test output
/W : Write input VREF : HSTL input reference input
/BW0 to /BW3 : Byte Write data select VDD : Power Supply
K, /K : Input clock VDDQ : Power Supply
C, /C : Output clock VSS : Ground
ZQ : Output impedance matching NC : No connection
/DLL : DLL disable
Remark Refer to Package Drawing for the index mark.
6Preliminary Data Sheet M15825EJ2V0DS
µ
µµ
µ
PD44165084, 44165184, 44165364
Pin Identification
Symbol Description
A Synchronous Address Inputs: These inputs are registered and must meet the setup and hold times around the
rising edge of K. Balls 9A, 3A, 10A, and 2A are reserved for the next higher-order address inputs on future
devices. All transactions operate on a burst of four words (two clock period of bus activity). These inputs are
ignored when device is deselected.
/R Synchronous Read: When LOW this input causes the address inputs to be registered and a READ cycle to be
initiated. This input must meet setup and hold times around the rising edge of K and is ignored on the
subsequent rising edge of K.
/W Synchronous Write: When LOW this input causes the address inputs to be registered and a WRITE cycle to be
initiated. This input must meet setup and hold times around the rising edge of K and is ignored on the
subsequent rising edge of K.
/NWx
/BWx Synchronous Byte Writes (Nybble Writes on x8): When LOW these inputs cause their respective byte or nybble
to be registered and written during WRITE cycles. These signals must meet setup and hold times around the
rising edges of K and /K for each of the two rising edges comprising the WRITE c ycle. See Pin Configurations
for signal to data relationships.
K, /K Input Clock: This input clock pair registers address and control inputs on the rising edge of K, and registers data
on the rising edge of K and the rising edge of /K. /K is ideally 180 degrees out of phase with K. All synchronous
inputs must meet setup and hold times around the clock rising edges.
C, /C Output Clock: This clock pair provides a user controlled means of tuning device output data. The rising edge of
C is used as the output timing reference for first and third output data. The rising edge of /C is used as the
output reference for second and fourth output data. Ideally, /C is 180 degrees out of phase with C. C and /C
may be tied HIGH to force the use of K and /K as the output reference clocks instead of having to provide C and
/C clocks. If tied HIGH, C and /C must remain HIGH and not be toggled during device operation.
/DLL DLL Disable: When LOW, this input causes the DLL to be bypassed for stable low frequency operation.
ZQ Output Impedance Matching Input: This input is used to tune the device outputs to the system data bus
impedance. DQ and CQ output impedance are set to 0.2 x RQ, where RQ is a resistor from this bump to
ground. Alternately, this pin can be connected directly to VDDQ, which enables the minimum impedance mode.
This pin cannot be connected directly to GND or left unconnected.
TMS
TDI IEEE 1149.1 Test Inputs: 1.8V I/O levels. These balls may be left Not Connected if the JTAG function is not
used in the circuit.
TCK IEEE 1149.1 Clock Input: 1.8V I/O levels. This pin must be tied to VSS if the JTAG function is not used in the
circuit.
VREF HSTL Input Reference Voltage: Nominally VDDQ/2. Provides a reference voltage for the input buffers.
D0 to Dxx Synchronous Data Inputs: Input data must meet setup and hold times around the rising edges of K and /K
during WRITE operations. See Pin Configurations for ball site location of individual signals.
x8 device uses D0-D7. Remaining signals are NC.
x18 device uses D0-D17. Remaining signals are NC.
x36 device uses D0-D35.
NC signals are read in the JTAG scan chain as the logic level applied to the ball site.
CQ, /CQ Synchronous Echo Clock Outputs. The rising edges of these outputs are tightly matched to the synchronous
data outputs and can be used as a data valid indication. These signals run freely and do not stop when Q
tristates.
TDO IEEE 1149.1 Test Output: 1.8V I/O level.
Q0 to Qxx Synchronous Data Outputs: Output data is synchronized to the respective C and /C or to K and /K rising edges
if C and /C are tied HIGH. This bus operates in response to /R commands. See Pin Configurations for ball site
location of individual signals.
x8 device uses Q0-Q7. Remaining signals are NC.
x18 device uses Q0-Q17. Remaining signals are NC.
x36 device uses Q0-Q35.
NC signals are read in the JTAG scan chain as the logic level applied to the ball site.
VDD Power Supply: 1.8V nominal. See DC Characteristics and Operating Conditions for range.
VDDQ Power Supply: Isolated Output Buffer Supply. Nominally 1.5V. 1.8V is also permissible. See DC Characteristics
and Operating Conditions for range.
VSS Power Supply: Ground
NC No Connect: These signals are internally connected and appear in the JTAG scan chain as the logic level
applied to the ball sites. These signals may be connected to ground to improve package heat dissipation.
7
Preliminary Data Sheet M15825EJ2V0DS
µ
µµ
µ
PD44165084, 44165184, 44165364
Block Diagram
[
µ
µµ
µ
PD44165084]
DATA
REGISTRY
& LOGIC
OUTPUT
REGISTER
/W
/NW0
/NW1
/R
K
/K K
K
/R
/W
C
ADDRESS 19
19
D0 - D7 8
OUTPUT
SELECT
OUTPUT
BUFFER
8
16
16
16
16
16
MUX
MUX
ADDRESS
REGISTRY
& LOGIC
2
19
x 32
MEMORY
ARRAY
WRITE
DRIVER
SENSE
AMPS
WRITE
REGISTER
Q0 - Q7
C, /C
OR
K, /K
CQ,
/CQ
2
[
µ
µµ
µ
PD44165184]
DATA
REGISTRY
& LOGIC
OUTPUT
REGISTER
/W
/BW0
/BW1
/R
K
/K K
K
/R
/W
C
ADDRESS 18
18
D0 - D17 18
OUTPUT
SELECT
OUTPUT
BUFFER
18
36
36 36
36
36
MUX
MUX
ADDRESS
REGISTRY
& LOGIC
2
18
x 72
MEMORY
ARRAY
WRITE
DRIVER
SENSE
AMPS
WRITE
REGISTER
Q0 - Q17
C, /C
OR
K, /K
CQ,
/CQ
2
[
µ
µµ
µ
PD44165364]
DATA
REGISTRY
& LOGIC
OUTPUT
REGISTER
/W
/BW0
/BW1
/R
K
/K K
K
/R
/W
C
ADDRESS 17
17
D0 - D35 36
OUTPUT
SELECT
OUTPUT
BUFFER
36
72
72 72
72
72
MUX
MUX
ADDRESS
REGISTRY
& LOGIC
2
17
x 144
MEMORY
ARRAY
WRITE
DRIVER
SENSE
AMPS
WRITE
REGISTER
Q0 - Q35
C, /C
OR
K, /K
CQ,
/CQ
2
/BW2
/BW3
8Preliminary Data Sheet M15825EJ2V0DS
µ
µµ
µ
PD44165084, 44165184, 44165364
Truth Table
Operation CLK /R /W D or Q
WRITE cycle L → H H L Data in
Load address, input write data on two Input data DA(A+0) DA(A+1) DA(A+2) DA(A+3)
consecutive K and /K rising edge Input clock K(t+1) ↑/K(t+1) ↑K(t+2) ↑/K(t+2) ↑
READ cycle L → H L X Data out
Load address, read data on two Output data QA(A+0) QA(A+1) QA(A+2) QA(A+3)
consecutive C and /C rising edge Output clock /C(t+1) ↑C(t+2) ↑/C(t+2) ↑C(t+3) ↑
NOP (No operation) L → H H H D=X or Q=Hi-Z
STANDBY(Clock stopped) Stopped X X Previous state
Remarks 1. H : High level, L : Lo w level, × : don’t care, ↑ : rising edge.
2. Data inputs are registered at K and /K rising edges. Data outputs are delivered at C and /C rising edges
except if C and /C are HIGH then data outp uts are delivered at K and /K rising edges.
3. /R and /W must meet setup/hold times around the rising edge (LOW to HIGH) of K and are registered at
the rising edge of K.
4. This device contains circuitry that will ensure the outputs will be in High-Z during power-up.
5. Refer to state diagram and timing diagrams for clarification.
6. It is recommende d that K = /(/K) = C = /(/C) when clock is stopped. This is not essential but permits most
rapid restart by overcoming transmission line charging symmetricall y.
7. If this signal was LOW to initiate the previous cycle, this signal becomes a don't care for this operation
however it is strongly recommended that this sig nal is brought HIGH as shown in the truth table.
8. This signal was HIGH on previous K clock rising edge. Initiating cons ecutive READ or WRITE operations
on consecutive K clock rising edges is n ot permitted. The device will ignore the second request.
9
Preliminary Data Sheet M15825EJ2V0DS
µ
µµ
µ
PD44165084, 44165184, 44165364
Byte Write Operation
[
µ
µµ
µ
PD44165084]
Operation K /K /NW0 /NW1
Write D0-7 L → H –00
–L → H0 0
Write D0-3 L → H –01
–L → H0 1
Write D4-7 L → H –10
–L → H1 0
Write nothing L → H –11
–L → H1 1
Remarks 1. H : High level, L : Lo w level, → : rising edge.
2. Assumes a WRITE cycle was initiated. /NW0 and /NW1 can be altered for any portion of the BURST
WRITE operation provi ded that the setup and hold requirements are satisfied.
[
µ
µµ
µ
PD44165184]
Operation K /K /BW0 /BW1
Write D0-17 L → H –00
–L → H0 0
Write D0-8 L → H –01
–L → H0 1
Write D9-17 L → H –10
–L → H1 0
Write nothing L → H –11
–L → H1 1
Remarks 1. H : High level, L : Low level, → : rising edge.
2. Assumes a WRITE cycle was initiated. /BW0 and /BW1 can be altered for any portion of the BURST
WRITE operation provi ded that the setup and hold requirements are satisfied.
[
µ
µµ
µ
PD44165364]
Operation K /K /BW0 /BW1 /BW2 /BW3
Write D0-35 L → H –0000
–L → H0000
Write D0-8 L → H –0111
–L → H0111
Write D9-17 L → H –1011
–L → H1011
Write D18-26 L → H –1101
–L → H1101
Write D27-35 L → H –1110
–L → H1110
Write nothing L → H –1111
–L → H1111
Remarks 1. H : High level, L : Low level, → : rising edge.
2. Assumes a WRITE cycle was initiated. /BW0 to /BW3 can be altered for an y portion of the BURST
WRITE operation provi ded that the setup and hold requirements are satisfied.
10 Preliminary Data Sheet M15825EJ2V0DS
µ
µµ
µ
PD44165084, 44165184, 44165364
Bus Cycle State Diagram
READ DOUBLE;
R_Count = R_Count+2
WRITE DOUBLE;
W_count = W_Count+2
Power UP
Always
/R = H
Supply voltage
provided
LOAD NEW
READ ADDRESS;
R_Count = 0;
R_Init = 1
READ PORT NOP
R_Init = 0
/R = L & R_Count = 4
/W = H
WRITE PORT NOP
LOAD NEW
WRITE ADDRESS;
W_Count = 0
Always /W = L & W_Count = 4
/W = L
R_Init = 0 /R = L
Supply voltage
provided
INCREMENT READ
ADDRESS BY TWO
Note 1
R_Init = 0
INCREMENT WRITE
ADDRESS BY TWO
Note 1
W_Count = 2 R_Count = 2 AlwaysAlways
/W = H
& W_Count = 4
/R = H
& R_Count = 4
Remarks 1. The address is concatenated with two additional internal LSBs to facilitate burst operati on.
The address order is always fixed as: xxx...xxx+0, xxx...xxx+1, xxx...xxx+2, xxx...xxx+ 3.
Bus cycle is terminated at the end of this sequence (burst count = 4).
2. Read and write state machines can be active simultaneously.
Read and write cannot be simultaneo usly initiated. Read takes precedence.
3. State machine control timing is controlled by K.
11
Preliminary Data Sheet M15825EJ2V0DS
µ
µµ
µ
PD44165084, 44165184, 44165364
Electrical Specifications
Absolute Maximum Ratings
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Supply voltage VDD –0.5 +2.9 V
Output supply voltage V DDQ –0.5 VDD V
Input voltage VIN –0.5 VDD + 0.5 (2.9 V MAX.) V
Input / Output voltage VI/O –0.5 VDDQ + 0.5 (2.9 V MAX.) V
Junction temperature Tj+125 °C
Storage temperature Tstg –55 +125 °C
Caution Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
Recommended DC Operating Conditions (Tj = 20 to 110 °
°°
°C)
Parameter Symbol Conditions MIN. TYP. MAX. Unit Note
Supply voltage VDD 1.7 1.9 V
Output supply voltage VDDQ1.4V
DD V
High level input voltage VIH VREF + 0.1 VDDQ + 0.3 V 1
Low level input voltage VIL –0.3 VREF – 0.1 V 1
Clock input voltage VIN –0.3 VDDQ + 0.3 V 1
Reference voltage VREF 0.68 0.95 V
Note1 Overshoot: VIH (AC) ≤ VDD + 0.7 V for t ≤ TKHKH/2
Undershoot: VIL (AC) ≥ – 0.5V for t ≤ TKHKH/2
Power-up: VIH ≤ VDDQ + 0.3V and VDD ≤ 1.7V and VDDQ ≤ 1.4V for t ≤ 200 ms
During normal operation, VDDQ must not exceed VDD.
Control input signals may not have p ulse widths less than TKHKL (MIN.) or operate at cycle rates
less than TKHKH (MIN.).
Capacitan ce (TA = 25 °
°°
°C, f = 1MHz)
Parameter Symbol Test conditions MIN. TYP. MAX. Unit
Input capacitance(Address, Control) CIN VIN = 0 V 4 5 pF
Input / Output capacitance(D, Q) CI/O VI/O = 0 V 6 7 pF
Clock Input capacitance Cclk Vclk = 0 V 5 6 pF
Remark These parameters are periodically sampled and not 100% tested.
12 Preliminary Data Sheet M15825EJ2V0DS
µ
µµ
µ
PD44165084, 44165184, 44165364
DC Characteristics (Tj = 20 to 110°C, VDD = 1.8 ± 0.1 V)
Parameter Symbol Test condition MIN. TYP. MAX. Unit Note
x8, x18 x36
Input leakage current ILI –2 – +2
µ
A
I/O leakage current ILO –2 – +2
µ
A
Operating supply current IDD VIN ≤ VIL or VIN ≥ VIH, –E30 525 710 mA
(Read Write cycle) II/O = 0 mA –E33 475 640
Cycle = MAX. –E40 400 545
–E50 330 445
–E60 280 380
Standby supply current ISB1 VIN ≤ VIL or VIN ≥ VIH, –E30 255 265 mA
(NOP) II/O = 0 mA –E33 235 245
Cycle = MAX. –E40 200 210
–E50 170 180
–E60 145 155
High level output voltage VOH(Low) |IOH| ≤ 0.1 mA VDDQ – 0.2 – VDDQV3,4
VOH Note1 VDDQ/2–0.08 – VDDQ/2+0.08 3,4
Low level output voltage VOL(Low) IOL ≤ 0.1 mA VSS – 0.2 V 3,4
VOL Note2 VDDQ/2–0.08 – VDDQ/2+0.08 3,4
Notes 1. Outputs are impedance-controlled. | IOH | = (VDDQ/2)/(RQ/5) for values of 175 Ω ≤ RQ ≤ 350 Ω.
2. Outputs are impedance-controlled. I OL = (VDDQ/2)/(RQ/5) for values of 175 Ω ≤ RQ ≤ 350 Ω.
3. AC load current is higher than the shown DC values. AC I/O curves are available upon request.
4. HSTL outputs meet JEDEC HSTL Class I and Class II standards.
13
Preliminary Data Sheet M15825EJ2V0DS
µ
µµ
µ
PD44165084, 44165184, 44165364
AC Characteristics (Tj = 20 °
°°
°C to 110 °
°°
°C, VDD = 1.8 ± 0.1 V)
AC Test Conditions
Input waveform (Rise / Fall time ≤
≤≤
≤ 0.3 ns)
0.75 V 0.75 V
Test Points
1.25 V
0.25 V
Output waveform
V
DD
Q / 2 V
DD
Q / 2
Test Points
Output load condition
Figure 1. External load at test
V
DD
Q / 2
0.75 V 50 Ω
Z
O
= 50 Ω
250 Ω
SRAM
V
REF
ZQ
Remark CL includes capacitances of the prob e and jig, and stray capacitances.
14 Preliminary Data Sheet M15825EJ2V0DS
µ
µµ
µ
PD44165084, 44165184, 44165364
Read an d Write Cycle
Parameter Symbol -E30 -E33 -E40 -E50 -E60 Unit Note
(333 MHz) (300 MHz) (250 MHz) (200 MHz) (167 MHz)
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
Clock
Average Clock cycle time (K, /K, C, /C) TKHKH 3.0 3.6 3.3 4.0 4.0 5.0 5.0 6.0 6.0 7.5 ns 1
Clock phase jitter (K, /K, C, /C) TKC var – 0.2 – 0.2 – 0.2 – 0.2 – 0.2 ns 2
Clock HIGH time (K, /K, C, /C) TKHKL 1.20 – 1.32 – 1.6 – 2.0 – 2.4 – ns
Clock LOW time (K, /K, C, /C) TKLKH 1.20 – 1.32 – 1.6 – 2.0 – 2.4 – ns
Clock to /clock (K→/K., C→/C.) TKH /KH 1.35 – 1.49 – 1.8 – 2.2 – 2.7 – ns
Clock to /clock (/K→K., /C→C.) T /KHKH 1.35 – 1.49 – 1.8 – 2.2 – 2.7 – ns
Clock to data clock (K→C., /K→/C.) TKHCH 0 1.30 0 1.45 0 1.8 0 2.3 0 2.8 ns
DLL lock time (K, C) TKC lock 1,024 – 1,024 – 1,024 – 1,024 – 1,024 – Cycle 3
K static to DLL reset TKC reset 30–30–30–30–30–ns
Output Times
C, /C HIGH to output valid TCHQV –0.27–0.29–0.35–0.38–0.40
ns
C, /C HIGH to output hold TCHQX – 0.27 – – 0.29 – – 0.35 – – 0.38 – – 0.40 – ns
C, /C HIGH to echo clock valid TCHCQV –0.25–0.27–0.33–0.36–0.38
ns
C, /C HIGH to echo clock hold TCHCQX – 0.25 – – 0.27 – – 0.33 – – 0.36 – – 0.38 – ns
CQ, /CQ HIGH to output valid TCQHQV –0.27–0.29–0.35–0.38–0.40
ns 4
CQ, /CQ HIGH to output hold TCQHQX – 0.27 – – 0.29 – – 0.35 – – 0.38 – – 0.40 – ns 4
C HIGH to output High-Z TCHQZ –0.27–0.29–0.35–0.38–0.40
ns
C HIGH to output Low-Z TCHQX1 – 0.27 – – 0.29 – – 0.35 – – 0.38 – – 0.40 – ns
Setup Times
Address valid to K rising edge TAVKH 0.4 – 0.4 – 0.5 – 0.6 – 0.7 – ns 5
Control inputs valid to K rising edge TIVKH 0.4 – 0.4 – 0.5 – 0.6 – 0.7 – ns 5
Data-in valid to K, /K rising edge TDVKH 0.3–0.33–0.4–0.5–0.6–ns 5
Hold Times
K rising edge to address hold TKHAX 0.4 – 0.4 – 0.5 – 0.6 – 0.7 – ns 5
K rising edge to control inputs hold TKHIX 0.4 – 0.4 – 0.5 – 0.6 – 0.7 – ns 5
K, /K rising edge to data-in hold TKHDX 0.3–0.33–0.4–0.5–0.6–ns 5
Notes 1. The device will operate at clock frequencies slower than TKHKH(MAX.).
2. Clock phase jitter is the variance from clock rising edge to the next expected colck rising edge.
3. VDD slew rate must be less than 0.1 V DC per 50 ns for DLL lock retention.
DLL lock time begins once VDD and input clock are stable.
It is recommended that the device is kept inactive duri ng these cycles.
4. Echo clock is very tightly controlled to data valid / data hold. By design, there is a ± 0.1 ns variation from
echo clock to data. The data sheet parameters reflect tester guardbands and test setup variations.
5. This is a synchronous device. All addresses, data and control lines must meet the specified setup
and hold times for all latching clock edges.
Remarks 1. This parameter is sampled.
2. Test conditions as specified with the output loading as shown in AC Test Conditions
unless otherwise noted.
3. Control input signals may not be operated with pulse widths less than TKHKL (MIN).
4. If C, /C are tied HIGH, K, /K become the references for C, /C timing parameters.
5. VDDQ is 1.5 VDC.
15
Preliminary Data Sheet M15825EJ2V0DS
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PD44165084, 44165184, 44165364
Read and Write Timing
K
Address
Data in
/K
24613 5 7
TKH/KH T/KHKH
C
/C
TKHCH
NOP READ READ
TKHKL TKLKH
Q00 Q02
Data out
Q01 Q03
/R
/W
TKHKL TKLKH TKHKH
TCHQX1 TCHQX TCHQZ
D10 D12D11 D13
TDVKH TKHDX
TDVKH TKHDX
TKHKH
TIVKH TKHIX
TAVKH TKHAX
CQ
/CQ
TCQHQV
TCHQV
TCHCQX
TCHCQV
TCHCQX
TCHCQV
WRITE NOP
Qx3
TCHQX
TCHQV
WRITE
TIVKH TKHIX
A0 A1 A2 A3
D30 D32D31 D33
Q20 Q22Q21 Q23
Qx2
TKH/KH T/KHKH
TKHCH
Remarks 1. Q00 refers to output from address A0+0.
Q01 refers to output from the next internal burst address following A 0,i.e.,A0+ 1.
2. Outputs are disable (High-Z) one clock cycle after a NOP.
3. In this example, if address A0=A1, data Q00=D10, Q01=D11.
Write data is forwarded immediately as read results.
16 Preliminary Data Sheet M15825EJ2V0DS
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PD44165084, 44165184, 44165364
JTAG Specification
These products support a limited set of JTAG functions as in IEEE standard 1149.1.
Test Access Port (TAP) Pins
Pin name Pin assignments Description
TCK 2R Test Clock Input. All input are captured on the rising edge of TCK and all outputs
propagate from the falling edge of TCK.
TMS 10R Test Mode Select. This is the command input for the TAP controller state machine.
TDI 11R Test Data Input. This is the input side of the serial registers placed between TDI and
TDO. The register placed between TDI and TDO is deter-mined by the state of the TAP
controller state machine and the instruction that is currently loaded in the TAP instruction.
TDO 1R Test Data Output. Output changes in response to the falling edge of TCK. This is the
output side of the serial registers placed between TDI and TDO.
Remark The device does not have TRST (TAP reset). The Test-Logic Reset state is entered while T M S is held high
for five rising edges of TCK. The TAP controller state is also reset on the SRAM POWER-UP.
JTAG DC Characteristics (20 °
°°
°C ≤
≤≤
≤ Tj ≤
≤≤
≤ 110 °
°°
°C, 1.7 V ≤
≤≤
≤ VDD ≤
≤≤
≤ 1.9 V, unless otherwise not ed )
Parameter Symbol Conditions MIN. TYP. MAX. Unit Note
JTAG Input leakage current ILI 0 V ≤ VIN ≤ VDD –5.0 – +5.0
µ
A
JTAG I/O leakage current ILO 0 V ≤ VIN ≤ VDDQ , –5.0 – +5.0
µ
A
Outputs disabled
JTAG input high voltage VIH 1.3 – VDD+0.3 V
JTAG input low voltage VIL –0.3 – +0.5 V
JTAG output high voltage VOH1 | IOHC | = 100
µ
A1.6––V
VOH2 | IOHT | = 2 mA 1.4 – – V
JTAG output low voltage VOL1 IOLC = 100
µ
A––0.2V
VOL2 IOLT = 2 mA – – 0.4 V
17
Preliminary Data Sheet M15825EJ2V0DS
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PD44165084, 44165184, 44165364
JTAG AC Test Conditions
Input waveform (Rise / Fall time ≤
≤≤
≤ 1 ns)
0.9 V 0.9 V
Test Points
1.8 V
0 V
Output waveform
0.9 V 0.9 V
Test Points
Output load
Figure 2. External load at test
TDO Z
O
= 50 Ω
V
TT
= 0.9 V
20 pF
50 Ω
18 Preliminary Data Sheet M15825EJ2V0DS
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PD44165084, 44165184, 44165364
JTAG AC Characteristics (Tj = 5 to 110 °
°°
°C)
Parameter Symbol Conditions MIN. TYP. MAX. Unit Note
Clock
Clock cycle time tTHTH 100 – – ns
Clock frequency fTF ––10MHz
Clock high time tTHTL 40 – – ns
Clock low time tTLTH 40 – – ns
Output time
TCK low to TDO unknown tTLOX 0––ns
TCK low to TDO valid tTLOV – – 20 ns
TDI valid to TCK high tDVTH 10 – – ns
TCK high to TDI invalid tTHDX 10 – – ns
Setup time
TMS setup time tMVTH 10 – – ns
Capture setup time tCS 10 – – ns
Hold time
TDI hold time tTHMX 10 – – ns
Capture hold time tCH 10 – – ns
JTAG Timing Diagram
19
Preliminary Data Sheet M15825EJ2V0DS
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PD44165084, 44165184, 44165364
Scan Register Definition (1)
Register name Description
Instruction register The instruction register holds the instructions that are executed by the TAP controller when it is
moved into the run-test/idle or the various data register state. The register can be loaded when it is
placed between the TDI and TDO pins. The instruction register is automatically preloaded with the
IDCODE instruction at power-up whenever the controller is placed in test-logic-reset state.
Bypass register The bypass register is a single bit register that can be placed between TDI and TD O. It allows serial
test data to be passed through the RAMs TAP to another device in the scan chain with as little delay
as possible.
ID register The ID Register is a 32 bit register that is loaded with a device and vendor specific 32 bit code when
the controller is put in capture-DR state with the IDCODE command loaded in the instruction register.
The register is then placed between the TDI and TDO pins when the controller is moved into shift-DR
state.
Boundary register The boundary register, under the control of the TAP controller, is loaded with the contents of the
RAMs I/O ring when the controller is in capture-DR state and then is placed between the TDI and
TDO pins when the controller is moved to shift-DR state. Several TAP instructions can be used to
activate the boundary register.
The Scan Exit Order tables describe which device bump connects to each boundary register
location. The first column defines the bit’s position in the boundary register. The shift register bit
nearest TDO (i.e., first to be shifted out) is defined as bit 1. The second column is the name of the
input or I/O at the bump and the third column is the bump number.
Scan Register Definition (2)
Register name Bit size Unit
Instruction register 3 bit
Bypass register 1 bit
ID register 32 bit
Boundary register 107 bit
ID Register Definition
Part number Organization ID [31:28] vendor revision no. ID [27:12] part no. ID [11:1] vendor ID no. ID [0] fix bit
µ
PD44165084 2M x 8 XXXX 0000 0000 0000 1111 00000010000 1
µ
PD44165184 1M x 18 XXXX 0000 0000 0001 0000 00000010000 1
µ
PD44165364 512K x 36 XXXX 0000 0000 0001 0001 00000010000 1
20 Preliminary Data Sheet M15825EJ2V0DS
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PD44165084, 44165184, 44165364
SCAN Exit Order
Bit Signal name Bump Bit Signal name Bump Bit Signal name Bump
no. x8 x18 x36 ID no. x8 x18 x36 ID no. x8 x18 x36 ID
1 /C 6R 37 NC NC D15 10D 73 NC NC Q28 2C
2 C 6P 38 NC NC Q15 9E 74 Q4 Q11 Q20 3E
3 A 6N 39 NC Q7 Q7 10C 75 D4 D11 D20 2D
4 A 7P 40 NC D7 D7 11D 76 NC NC D29 2E
5 A 7N 41 NC NC D16 9C 77 NC NC Q29 1E
6 A 7R 42 NC NC Q16 9D 78 NC Q12 Q21 2F
7 A 8R 43 Q3 Q8 Q8 11B 79 NC D12 D21 3F
8 A 8P 44 D3 D8 D8 11C 80 NC NC D30 1G
9 A 9R 45 NC NC D17 9B 81 NC NC Q30 1F
10 NC Q0 Q0 11P 46 NC NC Q17 10B 82 Q5 Q13 Q22 3G
11 NC D0 D0 10P 47 CQ 11A 83 D5 D13 D22 2G
12 NC NC D9 10N 48 Vss 10A 84 NC NC D31 1J
13 NC NC Q9 9P 49 A A NC 9A 85 NC NC Q31 2J
14 NC Q1 Q1 10M 50 A 8B 86 NC Q14 Q23 3K
15 NC D1 D1 11N 51 A 7C 87 NC D14 D23 3J
16 NC NC D10 9M 52 NC 6C 88 NC NC D32 2K
17 NC NC Q10 9N 53 /R 8A 89 NC NC Q32 1K
18 Q0 Q2 Q2 11L 54 NC NC /BW1 7A 90 Q6 Q15 Q24 2L
19 D0 D2 D2 11M 55 /NW0 /BW0 /BW0 7B 91 D6 D15 D24 3L
20 NC NC D11 9L 56 K 6B 92 NC NC D33 1M
21 NC NC Q11 10L 57 /K 6A 93 NC NC Q33 1L
22 NC Q3 Q3 11K 58 NC NC /BW3 5B 94 NC Q16 Q25 3N
23 NC D3 D3 10K 59 /NW1 /BW1 /BW2 5A 95 NC D16 D25 3M
24 NC NC D12 9J 60 /W 4A 96 NC NC D34 1N
25 NC NC Q12 9K 61 A 5C 97 NC NC Q34 2M
26 Q1 Q4 Q4 10J 62 A 4B 98 Q7 Q17 Q26 3P
27 D1 D4 D4 11J 63 A NC NC 3A 99 D7 D17 D26 2N
28 ZQ 11H 64 Vss 2A 100 NC NC D35 2P
29 NC NC D13 10G 65 /CQ 1A 101 NC NC Q35 1P
30 NC NC Q13 9G 66 NC Q9 Q18 2B 102 A 3R
31 NC Q5 Q5 11F 67 NC D9 D18 3B 103 A 4R
32 NC D5 D5 11G 68 NC NC D27 1C 104 A 4P
33 NC NC D14 9F 69 NC NC Q27 1B 105 A 5P
34 NC NC Q14 10F 70 NC Q10 Q19 3D 106 A 5N
35 Q2 Q6 Q6 11E 71 NC D10 D19 3C 107 A 5R
36 D2 D6 D6 10E 72 NC NC D28 1D
21
Preliminary Data Sheet M15825EJ2V0DS
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PD44165084, 44165184, 44165364
JTAG Instructions
Instructions Description
EXTEST EXTEST is an IEEE 1149.1 mandatory public instruction. It is to be executed whenever the instruction
register, whatever length it may be in the device, is loaded with all logic 0s. EXTEST is not implemented
in this device. Therefore this device is not 1149.1 compliant. Nevertheless, this RAMs TAP does
respond to an all zeros instruction, as follows. With the EXTEST (000) instruction loaded in the
instruction register the RAM responds just as it does in response to the SAMPLE instruction, except the
RAM output are forced to Hi-Z any time the instruction is loaded.
IDCODE The IDCODE instruction causes the ID ROM to be loaded into the ID register when the controller is in
capture-DR mode and places the ID register between the TDI and TDO pins in shift-DR mode. The
IDCODE instruction is the default instruction loaded in at power up and any time the controller is placed
in the test-logic-reset state.
BYPASS The BYPASS instruction is loaded in the instruction register when the bypass register is placed between
TDI and TDO. This occurs when the TAP controller is moved to the shift-DR state. This allows the
board level scan path to be shortened to facilitate testing of other devices in the scan path.
SAMPLE SAMPLE is a Standard 1149.1 mandatory public instruction. When the SAMPLE instruction is loaded in
the instruction register, moving the TAP controller into the capture-DR state loads the data in the RAMs
input and I/O buffers into the boundary scan register. Because the RAM clock(s) are independent from
the TAP clock (TCK) it is possible for the TAP to attempt to capture the I/O ring contents while the input
buffers are in transition (i.e., in a metastable state). Although allowing the TAP to SAMPLE metastable
input will not harm the device, repeatable results cannot be expected. RAM input signals must be
stabilized for long enough to meet the TAPs input data capture setup plus hold time (tCS plus tCH). The
RAMs clock inputs need not be paused for any other TAP operation except capturing the I/O ring
contents into the boundary scan register. Moving the controller to shift-DR state then places the
boundary scan register between the TDI and TDO pins. This functionality is not Standard 1149.1
compliant.
SAMPLE-Z If the SAMPLE-Z instruction is loaded in the instruction register, all RAM outputs are forced to an inactive
drive state (Hi-Z) and the boundary register is connected between TDI and TDO when the TAP controller
is moved to the shift-DR state.
JTAG Instruction Coding
IR2 IR1 IR0 Instruction Note
0 0 0 EXTEST 1
0 0 1 IDCODE
0 1 0 SAMPLE-Z 1
0 1 1 RESERVED
1 0 0 SAMPLE
1 0 1 RESERVED
1 1 0 RESERVED
1 1 1 BYPASS
Note 1. TRISTATE all data drivers and CAPTURE the pad values into a SERIAL SCAN LATCH.
22 Preliminary Data Sheet M15825EJ2V0DS
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PD44165084, 44165184, 44165364
TAP Controller State Diagram
Disabling the Test Access Port
It is possible to use this device without utilizing the TAP. To disable the TAP Controller without interfering with normal
operation of the device, TCK must be tied to VSS to preclude mid level inputs.
TDI and TMS are designe d so an undriven input will produce a respons e identical to the application of a logic 1, and
may be left unconnected. But they may also be tied to VDD through a 1k resistor.
TDO should be left unconnected.
23
Preliminary Data Sheet M15825EJ2V0DS
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PD44165084, 44165184, 44165364
Test Logic Operation (Instruction Scan)
TCK
Controller
state
TDI
TMS
TDO
Test-Logic-Reset
Run-Test/Idle
Select-DR-Scan
Select-IR-Scan
Capture-IR
Shift-IR
Exit1-IR
Pause-IR
Exit2-IR
Shift-IR
Exit1-IR
Update-IR
Run-Test/Idle
IDCODE
Instruction
Register state New Instruction
Output Inactive
Output from Instruction Register Output from Instruction Register
24 Preliminary Data Sheet M15825EJ2V0DS
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PD44165084, 44165184, 44165364
Test Logic Operation (Data Scan)
TCK
Controller
state
TDI
TMS
TDO
Run-Test/Idle
Select-DR-Scan
Capture-DR
Shift-DR
Exit1-DR
Pause-DR
Exit2-DR
Shift-DR
Exit1-DR
Update-DR
Test-Logic-Reset
Instruction
Instruction
Register state IDCODE
Output Inactive
Output from Instruction Register Output from Instruction Register
Run-Test/Idle
Select-DR-Scan
Select-IR-Scan
25
Preliminary Data Sheet M15825EJ2V0DS
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PD44165084, 44165184, 44165364
Package Drawing
y1 S
S
y
S
A
A
B
S
S
A B
x
M
φ
b
φ
e
h
A1
A2 A
INDEX MARK
E
D
ZD ZE
RPNMLKJHGFEDCBA
11
10
9
8
7
6
5
4
3
2
1
w
B
Sw
ITEM MILLIMETERS
D
E
ZD
ZE
e
h
A
A1
A2
b
y
x
w
y1
13.00
15.00
1.50
0.50
1.00
0.60
1.40
0.40
1.00
0.45
0.08
0.08
0.15
0.20
This package drawing is a preliminary version. It may be changed in the future.
165-PIN PLASTIC FBGA (13x15)
26 Preliminary Data Sheet M15825EJ2V0DS
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PD44165084, 44165184, 44165364
Recommended Soldering Condition
Please consult with our sales offices for soldering conditions of these products.
Types of Surface Mount Devices
µ
PD44165084F5-EQ1: 165-pin PLASTIC FBGA (13 x 15)
µ
PD44165184F5-EQ1: 165-pin PLASTIC FBGA (13 x 15)
µ
PD44165364F5-EQ1: 165-pin PLASTIC FBGA (13 x 15)
27
Preliminary Data Sheet M15825EJ2V0DS
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Revision History
Edition/ Page Type of Location Description
Date This Previous revision (Previous edition → This edition)
edition edition
2nd edition/ Throughout Throughout Modification Pin Configurations, Pin Identification, Address inputs: Ax → A
March 2002 Scan Exit Order
p.1 p.1 Modification Function Name 18M-BIT CMOS SYNCHRONOUS
FAST SRAM QUAD DATA RATE
→ 18M-BIT QDRTMII SRAM
Addition Description
µ
PD44165364
p.2 p.2 Modification Ordering Information Package code: Fx-EQx → F5-EQ1
Deletion Remark
p.3-5 p. 3-5 Modification Pin Configurations Package code: Fx → F5-EQ1
p.6 p.6 Modification Pin Identification ZQ: VDD → VDDQ
D0 to Dxx: K# → /K
p.14 p.14 Modification TKC var (MAX.) -E30: 0.08 → 0.2, -E33: 0.08 → 0.2,
-E40: 0.10 → 0.2, -E50: 0.13 → 0.2,
-E60: 0.15 → 0.2
TKH /KH (MAX.) -E30: 1.65 → −, -E33: 1.82 → −,
-E40: 2.2 → −, -E50: 2.75 → −,
-E60: 3.3 → −
Addition T /KHKH
Modification TAVKH, TIVKH, TKHAX, TKHIX
(MIN.) -E40: 0.4 → 0.5
TDVKH, TKHDX (MIN.) -E30: 0.4 → 0.3, -E33: 0.4 → 0.33,
-E50: 0.6 → 0.5, -E60: 0.7 → 0.6
Addition Note 1, 2, 4
Modification Note 1 → 5, Note 2 → 3
Modification Note 3
Addition Remark 5
p.15 p.15 Addition Read and Write Timing T/KHKH
p.25 p.25 Addition Package Drawing Package drawing (Preliminary version)
p.26 p.26 Modification Types of Surface Mount Devices Package code: Fx → F5-EQ1
28 Preliminary Data Sheet M15825EJ2V0DS
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[MEMO]
29
Preliminary Data Sheet M15825EJ2V0DS
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[MEMO]
30 Preliminary Data Sheet M15825EJ2V0DS
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[MEMO]
31
Preliminary Data Sheet M15825EJ2V0DS
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NOTES FOR CMOS DEVICES
1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS
Note:
Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static electricity
as much as possible, and quickly dissipate it once, when it has occurred. Environmental control
must be adequate. When it is dry, humidifier should be used. It is recommended to avoid using
insulators that easily build static electricity. Semiconductor devices must be stored and transported
in an anti-static container, static shielding bag or conductive material. All test and measurement
tools including work bench and floor should be grounded. The operator should be grounded using
wrist strap. Semiconductor devices must not be touched with bare hands. Similar precautions need
to be taken for PW boards with semiconductor devices on it.
2 HANDLING OF UNUSED INPUT PINS FOR CMOS
Note:
No connection for CMOS device inputs can be cause of malfunction. If no connection is provided
to the input pins, it is possible that an internal input level may be generated due to noise, etc., hence
causing malfunction. CMOS devices behave differently than Bipolar or NMOS devices. Input levels
of CMOS devices must be fixed high or low by using a pull-up or pull-down circuitry. Each unused
pin should be connected to V
DD
or GND with a resistor, if it is considered to have a possibility of
being an output pin. All handling related to the unused pins must be judged device by device and
related specifications governing the devices.
3 STATUS BEFORE INITIALIZATION OF MOS DEVICES
Note:
Power-on does not necessarily define initial status of MOS device. Production process of MOS
does not define the initial operation status of the device. Immediately after the power source is
turned ON, the devices with reset function have not yet been initialized. Hence, power-on does
not guarantee out-pin levels, I/O settings or contents of registers. Device is not initialized until the
reset signal is received. Reset operation must be executed immediately after power-on for devices
having reset function.
µ
µµ
µ
PD44165084, 44165184, 44165364
QDR RAMs and Quad Data Rate RAMs comprise a new family of products developed by Cypress Semic onductor,
Hitachi, IDT, Micron Technology, Inc., NEC, and Samsung.
M8E 00. 4
The information in this document is current as of April, 2002. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
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