SOT23 NPN SILICON PLANAR
SWITCHING TRANSISTORS
ISSUE 3 FEBRUARY 1996
FEATURES
* Fast switching
PARTMARKING DETAILS
FMMT2222 1BZ FMMT2222A 1P
FMMT2222R 2P FMMT2222AR 3P
COMPLEMENTARY TYPES
FMMT2222 FMMT2907
FMMT2222A FMMT2907A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL FMMT2222 FMMT2222A UNIT
Collector-Base Voltage VCBO 60 75 V
Collector-Emitter Voltage VCEO 30 40 V
Emitter-Base Voltage VEBO 56V
Continuous Collector Current IC600 mA
Power Dissipation at Tamb
=25°C Ptot 330 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb
= 25°C unless otherwise stated).
PARAMETER SYMBOL FMMT2222 FMMT2222A UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
Collector-Base
Breakdown Voltage
V(BR)CBO 60 75 V IC
=10µA, IE=0
Collector-Emitter
Breakdown Voltage
V(BR)CEO 30 40 V IC
=10mA, IB=0
Emitter-Base
Breakdown Voltage
V(BR)EBO 56V
IE=10µA, IC
=0
Collector Cut-Off
Current
ICBO 10
10
10
10
nA
µA
nA
µA
VCB=50V, IE=0
VCB=60V, IE=0
VCB=50V, IE=0, Tamb
=150°C
VCB=60V, IE=0, Tamb
=150°C
Emitter Cut-Off
Current
IEBO 10 10 nA VEB
=3V, IC
=0
Collector-Emitter
Cut-Off Current
ICEX 10 10 nA VCE=60V, VEB(off)
=3V
Collector-Emitter
Saturation Voltage
VCE(sat) 0.3
1.0
0.3
1.0
V
V
IC
=150mA, IB=15mA*
IC
=500mA, IB=50mA*
Base-Emitter
Saturation Voltage
VBE(sat) 0.6 2.0
2.6
0.6 1.2
2.0
V
V
IC
=150mA, IB=15mA*
IC
=500mA, IB=50mA*
Static Forward
Current Transfer
Ratio
hFE 35
50
75
35
100
50
30
300
35
50
75
35
100
50
40
300
IC
=0.1mA, VCE
=10V*
IC
=1mA, VCE
=10V
IC
=10mA, VCE
=10V*
IC
=10mA, VCE
=10V, Tamb
=-55°C
IC
=150mA, VCE
=10V*
IC
=150mA, VCE
=1V*
IC
=500mA, VCE
=10V*
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Spice parameter data is available upon request for this device
FMMT2222
FMMT2222A
ELECTRICAL CHARACTERISTICS (at Tamb
= 25°C unless otherwise stated).
PARAMETER SYMBOL FMMT2222 FMMT2222A UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
Transition
Frequency
fT250 300 MHz IC
=20mA, VCE
=20V
f=100MHz
Output Capacitance Cobo 88pFV
CB=10V, IE=0,
f=140KHz
Input Capacitance Cibo 30 25 pF VEB
=0.5V, IC
=0
f=140KHz
Delay Time td10 10 ns VCC=30V, VBE(off)
=0.5V
IC
=150mA, IB1=15mA
(See Delay Test Circuit)
Rise Time tr25 25 ns
Storage Time ts225 225 ns VCC=30V, IC
=150mA
IB1= IB2=15mA
(See Storage Test
Circuit)
Fall Time tf60 60 ns
FMMT2222
FMMT2222A
Scope:
Rin > 100 kΩ
Cin < 12 pF
Rise Time < 5 ns
0
0.5V
9.9V
Generator rise time <2ns
Pulse width (t1)<200ns
Duty cycle = 2%
+30V
200Ω
619Ω
DELAY AND RISE TEST CIRCUIT
+30V
1N916
-3V
1KΩ
200
Ω
Scope:
R
in
> 100 kΩ
C
in
< 12 pF
Rise Time < 5 ns
-13.8 V
=500µs
=100µs
<5ns
+16.2 V
0
Duty cycle = 2%
STORAGE TIME AND FALL TIME TEST CIRCUIT
C
B
E
SOT23 NPN SILICON PLANAR
SWITCHING TRANSISTORS
ISSUE 3 FEBRUARY 1996
FEATURES
* Fast switching
PARTMARKING DETAILS
FMMT2222 1BZ FMMT2222A 1P
FMMT2222R 2P FMMT2222AR 3P
COMPLEMENTARY TYPES
FMMT2222 FMMT2907
FMMT2222A FMMT2907A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL FMMT2222 FMMT2222A UNIT
Collector-Base Voltage VCBO 60 75 V
Collector-Emitter Voltage VCEO 30 40 V
Emitter-Base Voltage VEBO 56V
Continuous Collector Current IC600 mA
Power Dissipation at Tamb
=25°C Ptot 330 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb
= 25°C unless otherwise stated).
PARAMETER SYMBOL FMMT2222 FMMT2222A UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
Collector-Base
Breakdown Voltage
V(BR)CBO 60 75 V IC
=10µA, IE=0
Collector-Emitter
Breakdown Voltage
V(BR)CEO 30 40 V IC
=10mA, IB=0
Emitter-Base
Breakdown Voltage
V(BR)EBO 56V
IE=10µA, IC
=0
Collector Cut-Off
Current
ICBO 10
10
10
10
nA
µA
nA
µA
VCB=50V, IE=0
VCB=60V, IE=0
VCB=50V, IE=0, Tamb
=150°C
VCB=60V, IE=0, Tamb
=150°C
Emitter Cut-Off
Current
IEBO 10 10 nA VEB
=3V, IC
=0
Collector-Emitter
Cut-Off Current
ICEX 10 10 nA VCE=60V, VEB(off)
=3V
Collector-Emitter
Saturation Voltage
VCE(sat) 0.3
1.0
0.3
1.0
V
V
IC
=150mA, IB=15mA*
IC
=500mA, IB=50mA*
Base-Emitter
Saturation Voltage
VBE(sat) 0.6 2.0
2.6
0.6 1.2
2.0
V
V
IC
=150mA, IB=15mA*
IC
=500mA, IB=50mA*
Static Forward
Current Transfer
Ratio
hFE 35
50
75
35
100
50
30
300
35
50
75
35
100
50
40
300
IC
=0.1mA, VCE
=10V*
IC
=1mA, VCE
=10V
IC
=10mA, VCE
=10V*
IC
=10mA, VCE
=10V, Tamb
=-55°C
IC
=150mA, VCE
=10V*
IC
=150mA, VCE
=1V*
IC
=500mA, VCE
=10V*
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Spice parameter data is available upon request for this device
FMMT2222
FMMT2222A
ELECTRICAL CHARACTERISTICS (at Tamb
= 25°C unless otherwise stated).
PARAMETER SYMBOL FMMT2222 FMMT2222A UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
Transition
Frequency
fT250 300 MHz IC
=20mA, VCE
=20V
f=100MHz
Output Capacitance Cobo 88pFV
CB=10V, IE=0,
f=140KHz
Input Capacitance Cibo 30 25 pF VEB
=0.5V, IC
=0
f=140KHz
Delay Time td10 10 ns VCC=30V, VBE(off)
=0.5V
IC
=150mA, IB1=15mA
(See Delay Test Circuit)
Rise Time tr25 25 ns
Storage Time ts225 225 ns VCC=30V, IC
=150mA
IB1= IB2=15mA
(See Storage Test
Circuit)
Fall Time tf60 60 ns
FMMT2222
FMMT2222A
Scope:
Rin > 100 kΩ
Cin < 12 pF
Rise Time < 5 ns
0
0.5V
9.9V
Generator rise time <2ns
Pulse width (t1)<200ns
Duty cycle = 2%
+30V
200Ω
619Ω
DELAY AND RISE TEST CIRCUIT
+30V
1N916
-3V
1KΩ
200
Ω
Scope:
R
in
> 100 kΩ
C
in
< 12 pF
Rise Time < 5 ns
-13.8 V
=500µs
=100µs
<5ns
+16.2 V
0
Duty cycle = 2%
STORAGE TIME AND FALL TIME TEST CIRCUIT
C
B
E
