2N6473 2N6474 2N6475 2N6476 NPN PNP COMPLEMENTARY SILICON SWITCHING TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6473, 2N6475 series types are complementary silicon power transistors, manufactured by the epitaxial base process, designed for general purpose amplifier and switching applications. MARKING: FULL PART NUMBER TO-220 CASE MAXIMUM RATINGS: (TC=25C) Collector-Base Voltage Collector-Emitter Voltage (RBE=100) Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCER VCEO VEBO IC IB PD TJ, Tstg JC 2N6473 2N6475 110 110 100 ELECTRICAL CHARACTERISTICS: (TC=25C unless otherwise noted) 2N6473 2N6475 SYMBOL TEST CONDITIONS MIN MAX ICEV VCE=Rated VCEO, VBE=1.5V 100 ICEV VCE=Rated VCEO, VBE=1.5V, TC=100C 2.0 ICER VCE=Rated VCER, RBE=100 100 ICER VCE=Rated VCER, RBE=100, TC=100C 2.0 ICEO VCE=1/2 Rated VCEO 1.0 IEBO VEB=5.0V 1.0 BVCEO IC=100mA 100 BVCER IC=100mA, RBE=100 110 VCE(SAT) IC=1.5A, IB=0.15A 1.2 VCE(SAT) IC=4.0A, IB=2.0A 2.5 VBE(ON) VCE=4.0V, IC=1.5A 2.0 VBE(ON) VCE=2.5V, IC=4.0A 3.5 hFE VCE=4.0V, IC=1.5A 15 150 hFE VCE=2.5V, IC=4.0A 2.0 hfe VCE=4.0V, IC=0.5A, f=50kHz 20 fT VCE=4.0V, IC=0.5A (2N6473, 2N6474) 4.0 fT VCE=4.0V, IC=0.5A (2N6475, 2N6476) 5.0 Cob VCB=10V, f=1.0MHz 250 2N6474 2N6476 130 130 120 5.0 4.0 2.0 40 -65 to +150 3.125 2N6474 2N6476 MIN MAX 100 2.0 100 2.0 1.0 120 130 15 2.0 20 4.0 5.0 - 1.0 1.2 2.5 2.0 3.5 150 250 UNITS V V V V A A W C C/W UNITS A mA A mA mA mA V V V V V V MHz MHz pF R1 (1-May 2013) 2N6473 2N6474 2N6475 2N6476 NPN PNP COMPLEMENTARY SILICON SWITCHING TRANSISTORS TO-220 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Collector 3) Emitter Tab) Collector MARKING: FULL PART NUMBER R1 (1-May 2013) w w w. c e n t r a l s e m i . c o m