CMPD2003 New! CMPD2003C New! CMPD2003S CMPD2004 Newt CMPD2004C CMPD2004S SURFACE MOUNT HIGH VOLTAGE SWITCHING DIODE DESCRIPTION Centra i . SOT-23 CASE The following configurations are available: CMPD2003 SINGLE MARKING CODE: A82 CMPD2003C DUAL, COMMON CATHODE MARKING CODE: C3C CMPD2003S DUAL, IN SERIES MARKING CODE: C3S CMPD2004 SINGLE MARKING CODE: D53 CMPD2004C DUAL, COMMON CATHODE MARKING CODE: DB7 CMPD2004S DUAL, IN SERIES MARKING CODE: DB6 MAXIMUM RATINGS (Ta=25C) CMPD2003) CMPD2004 CMPD2003C CMPD2004C SYMBOL CMPD2003S CMPD2004S Continuous Reverse Voltage VR 200 240 Peak RepetitiveReverse Voltage VRRM 250 300 Peak Repetitive Reverse Current lo 200 200 Continuous Forward Current IF 250 225 Peak Repetitive Forward Current lFRM 625 625 Forward Surge Current, tp=1 ms lFSM 4000 4000 Forward Surge Current, tp=1s lEsm 1000 1000 Power Dissipation Pp 350 Operating and Storage Junction Temperature Ty:T stg -65 to +150 Thermal Resistance OJA 357 ELECTRICAL CHARACTERISTICS (Ta=25C unless otherwise noted) CMPD2003 CMPD2004 CMPD2003C CMPD2004C CMPD2003S CMPD2004S SYMBOL TEST CONDITIONS MIN MAX MIN MAX BVR IR=100pA 250 300 Ip VR=200V 100 170 The CENTRAL SEMICONDUCTOR CMPD2003, CMPD2003C, CMPD2003S, CMPD2004, CMPD2004C, and CMPD2004S types are silicon switching diodes manufactured by the epitaxial planar process, designed for applications requiring high voltage capability. C/W UNITCMPD2003 CMPD2004 CMPD2003C CMPD2004C MPD2003S MPD2004 SYMBOL TEST NDITIONS MIN MAX MIN MAX In VR=200V, Ta=150C 100 . IR VR=240V - 100 IR VR=240V, Ta=150C - 100 VE iF=100mA 1.0 1.0 Ve Ie=200mA 1.25 - Cr Vp=0, f=1 MHz 5.0 5.0 trr I-=IR=30mA, Rec. TO 3.0mA, RL =1002 50 50 TOP VIEW All Dimensions in Inches (mm). .110(2.80) 118(3.00) .003(0.08) .083(2.10) .006(0.15) 0411.08) NOMINAL NOMINAL + .106(2.70) .047(1.19) MAXIMUM (063(1.60) rT 4 ,005(0.13 _+___ 1 MAXIMUM .037(0.94) .014(0.35) 050(1.28) 020(0.50) Fe Flere CMPD2003 CMPD2003C CMPD2004 CMPD2004C 171 a 5 A1,C2 CMPD2003S CMPD2004S UNIT nA | pA pF ns R3 are) 1a | aad