Data Sheet No. 2N3501L Generic Part Number: 2N3500L Type 2N3501L Geometry 5620 Polarity NPN Qual Level: JAN - JANS REF: MIL-PRF-19500/366 Features: * General-purpose silicon transistor for switching and amplifier applications. * Housed in TO-5 case. * Also available in chip form using the 5620 chip geometry. * The Min and Max limits shown are per MIL-PRF-19500/366 which Semicoa meets in all cases. TO-5 Maximum Ratings o TC = 25 C unless otherwise specified Rating Symbol Rating Unit Collector-Emitter voltage VCEO 150 V Collector-Base Voltage VCBO 150 V Emitter-Base voltage VEBO 6.0 V IC 300 mA 5.0 mW 28.8 mW/oC Collector Current, Continuous Power Dissipation, TA = 25oC PD Derate above 25oC Operating Junction Temperature Storage Temperature TJ -65 to +200 TSTG -65 to +200 o C o C Data Sheet No. 2N3501L Electrical Characteristics o TC = 25 C unless otherwise specified OFF Characteristics Collector-Base Breakdown Voltage IC = 10 A Collector-Emitter Breakdown Voltage IC = 10 mA Emitter-Base Breakdown Voltage IE = 10 A Collector-Base Cutoff Current VCB = 75 V Emitter-Base Cutoff Current VEB = 4 V ON Characteristics Forward Current Transfer Ratio IC = 100 A, VCE = 10 V (pulsed) IC = 1.0 mA, VCE = 10 V (pulsed) IC = 10 mA, VCE = 10 V (pulsed) IC = 150 mA, VCE = 10 V (pulsed) IC = 300 mA, VCE = 10 V (pulsed) Base-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA IC = 150 mA, IB = 15 mA Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA IC = 150 mA, IB = 15 mA Small Signal Characteristics Short Circuit Forward Current Transfer Ratio IC = 10 mA, VCE = 10 V, f = 1 kHz Symbol Min Max Unit V(BR)CBO 150 --- V V(BR)CEO 150 --- V V(BR)EBO 6.0 --- V ICBO --- 50 nA IEBO --- 25 nA Symbol Min Max Unit hFE1 hFE2 hFE3 hFE4 hFE5 35 50 75 100 20 ------300 --- ----------- VBE(sat)1 VBE(sat)2 ----- 0.8 1.2 V dc V dc VCE(sat)1 VCE(sat)2 ----- 0.2 0.4 V dc V dc Symbol Min Max Unit AC hFE 75 375 --- |hFE| 1.5 8.0 --- COBO --- 8.0 pF CIBO --- 80 pF NF --- 16 dB NF --- 6.0 dB Symbol Min Max Unit tON --- 115 ns tOFF --- 1150 ns Magnitude of Common Emitter, Small Signal, Short Circuit Forward Current Transfer Ratio VCE = 20 V, IC = 20 mA, f = 100 MHz Open Circuit Output Capacitance VCB = 10 V, IE = 0, 100 kHz < f < 1 MHz Input Capacitance, Output Open Circuited VEB = 0.5 V, IC = 0, 100 kHz < f < 1 MHz Noise Figure VCE = 10 V, IC = 0.5 mA, Rg = 1 kOhm, 1 kHz Noise Figure VCE = 10 V, IC = 0.5 mA, Rg = 1 kOhm, 1 kHz Switching Characteristics Saturated Turn On Switching time to 90% IC = 150 mA, IB1 = 15 mA, VEB = 2 V Saturated Turn Off Switching time to 10% IC = 150 mA, IB2 = -IB1 = 15 mA