PTFB212503EL PTFB212503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 - 2170 MHz Description The PTFB212503EL and PTFB212503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 2110 to 2170 MHz frequency band. Features include input and output matching, high gain, wide signal bandwidth and reduced memory effects for unparalleled DPD correctability. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. VDD = 30 V, IDQ = 1.85 A, = 2170 MHz, 3GPP signal, PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz -15 40 ACPR 30 -30 Efficiency 25 -35 20 -40 15 -45 10 -50 5 -55 Efficiency (%) IMD (dBc) IMD Up 0 34 36 38 * Broadband internal input and output matching * Enhanced for use in DPD error correction systems * Wide video bandwidth * Typical single-carrier WCDMA performance at 2170 MHz, 30 V, IDQ = 1.85 A, 3GPP signal, channel bandwidth = 3.84 MHz, PAR = 7.5 dB @ 0.01% CCDF - Average output power = 49.4 dBm - Linear gain = 18 dB - Efficiency = 37% - Intermodulation distortion = -33 dBc * Typical CW performance, 2170 MHz, 30 V - Output power at P1dB = 240 W - Efficiency = 54 % * Increased negative gate-source voltage range for improved performance in Doherty peaking amplifiers * Integrated ESD protection: Human Body Model, Class 2 (minimum) * Capable of handling 10:1 VSWR @ 30 V, 240 W (CW) output power * Pb-free, RoHS-compliant 35 IMD Low -25 32 PTFB212503FL Package H-34288-4/2 Features Two-carrier WCDMA Drive-up -20 PTFB212503EL Package H-33288-6 40 42 44 46 48 50 Output Power (dBm) RF Characteristics Two-carrier WCDMA Specifications (not subject to production test--verified by design/characterization in Infineon test fixture) VDD = 30 V, IDQ = 1.85 A, POUT = 55 W average, 1 = 2160 MHz, 2 = 2170 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Gain Gps -- 18.0 -- dB Drain Efficiency hD -- 31 -- % Intermodulation Distortion IMD -- -33 -- dBc All published data at TCASE = 25C unless otherwise indicated ESD: Electrostatic discharge sensitive device--observe handling precautions! Data Sheet 1 of 14 Rev. 07, 2010-11-04 PTFB212503EL PTFB212503FL Confidential, Limited Internal Distribution RF Characteristics (cont.) Two-tone Specifications (tested in Infineon test fixture) VDD = 30 V, IDQ = 1.85 A, POUT = 200 W PEP, = 2170 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Unit Gain Gps 17 18 -- dB Drain Efficiency hD 39 40 -- % Intermodulation Distortion IMD -- -30 -28 dBc DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 -- -- V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS -- -- 1.0 A Drain Leakage Current VDS = 63 V, VGS = 0 V IDSS -- -- 10.0 A On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) -- 0.05 -- W Operating Gate Voltage VDS = 30 V, IDQ = 1.85 A VGS 2.3 2.8 3.3 V Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS -- -- 1.0 A Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS -6 to +10 V Junction Temperature TJ 200 C Storage Temperature Range TSTG -40 to +150 C Thermal Resistance (TCASE = 70C, 200 W CW) RqJC 0.26 C/W Ordering Information Type and Version Package Outline Description Shipping PTFB212503EL V1 H-33288-6 Thermally-enhanced slotted flange, single-ended Tray PTFB212503EL V1 R250 H-33288-6 Thermally-enhanced slotted flange, single-ended Tape & Reel, 250 pcs PTFB212503FL V2 H-34288-4/2 Thermally-enhanced earless flange, single-ended Tray PTFB212503FL V2 R250 H-34288-4/2 Thermally-enhanced earless flange, single-ended Tape & Reel, 250 pcs Data Sheet 2 of 14 Rev. 07, 2010-11-04 PTFB212503EL PTFB212503FL Confidential, Limited Internal Distribution Typical Performance (data taken in a production test fixture) Two-carrier WCDMA Drive-up Two-carrier WCDMA Drive-up VDD = 30 V, IDQ = 1.85 A, 3GPP signal, PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz VDD = 30 V, IDQ = 1.85 A = 2170 MHz, 3GPP WCDMA, PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz -25 20 50 19 40 2170 MHz Up -35 2140 MHz Up Gain (dB) IMD (dBc) 2140 MHz Low 2110 MHz Low -40 2110 MHz Up -45 Gain 18 30 17 20 Efficiency 16 -50 -55 15 32 34 36 38 40 42 44 46 48 50 0 33 35 37 CW Power Sweep Gain & Efficiency vs. Output Power 55 18 45 Gain 35 16 25 Efficiency 15 14 5 42 44 46 48 50 49 51 52 -10 RL 50 -15 45 -20 Efficiency 40 35 -25 -30 IMD 3 30 25 -35 -40 Gain 20 -45 15 54 -50 2070 Output Power (dBm) Data Sheet 47 -5 55 Gain (dB) / Efficiency (%) 19 40 45 60 Drain Efficiency (%) 65 38 43 VDD = 30 V, IDQ = 1.85 A, PO UT = 100 W 20 15 41 Two-tone Broadband Performance VDD = 30 V, IDQ = 1.85 A, = 2170 MHz 17 39 Output Power (dBm) Output Power (dBm) Gain (dB) 10 Return Loss (dB), IMD (dBc) -30 Efficiency (%) 2170 MHz Low 2090 2110 2130 2150 2170 2190 2210 Frequency (MHz) 3 of 14 Rev. 07, 2010-11-04 PTFB212503EL PTFB212503FL Confidential, Limited Internal Distribution Typical Performance (cont.) Two-tone Drive-up Two-tone Drive-up VDD = 30 V, IDQ = 1.85 A, 1 = 2170 MHz, 2 = 2169 MHz VDD = 30 V, IDQ = 1.85 A, 1 = 2170 MHz, 2 = 2169 MHz 45 -25 40 Efficiency -40 25 -45 20 15 IMD 3rd -55 10 -60 40 Gain Gain (dB) 30 -50 19 35 -35 50 Efficiency Efficiency (%) IMD (dBc) -30 20 18 30 17 20 16 10 5 -65 15 0 37 39 41 43 45 47 49 51 53 0 37 55 39 41 43 45 47 49 51 53 55 Output Power, PEP (dBm) Output Power, PEP (dBm) Third Order Intermodulation Distortion vs. Output Power Intermodulation Distortion VDD = 30 V, IDQ = 1.85 A, 1 = 2170 MHz, 2 = 2169 MHz VDD = 30 V, IDQ = 1.85 A, -20 -20 -25 -30 2110 MHz -35 2140 MHz -40 3rd Order -30 IMD (dBc) IMD (dBc) Efficiency (%) -20 2170 MHz -45 -50 5th -40 7th -50 -60 -55 -60 -70 35 40 45 50 55 35 Output Power, PEP (dBm) Data Sheet 40 45 50 55 Output Power, PEP (dBm) 4 of 14 Rev. 07, 2010-11-04 PTFB212503EL PTFB212503FL Confidential, Limited Internal Distribution Typical Performance (cont.) CW Performance Gain vs. Output Power CW Performance VDD = 30 V, IDQ = 1.85 A, = 2170 MHz VDD = 30 V, = 2170 MHz 21 60 Efficiency 19 40 30 Gain 17 20 16 10 15 40 45 50 IDQ = 1.85 A 17 IDQ = 1.30 A 16 0 35 18 35 55 40 Output Power (dBm) VDD = 30 V, IDQ = 1.85 A, PO UT = 63 W 60 50 -40 40 IM3 30 20 Efficiency -70 10 -80 0 35 37 39 41 43 45 47 49 Gain (dB) / Efficiency (%) -30 60 Drain Efficiency (%) IM3 (dBc) -20 33 0 55 RL 50 -5 -10 45 40 -15 -20 Efficiency 35 -25 IM3 30 -30 25 20 -35 Gain -40 15 -45 10 51 -50 1960 2020 2080 2140 2200 2260 2320 Frequency (MHz) Output Power (dBm) Data Sheet 55 Single-carrier WCDMA, 3GGP Broadband VDD = 30 V, IDQ = 1.85 A = 2170 MHz, 3GPP WCDMA, PAR = 8.5 dB, BW 3.84 MHz -60 50 Output Power (dBm) Single-carrier WCDMA -50 45 Return Loss (dB) / IM3 (dBc) 18 IDQ = 2.11 A 50 Power Gain (dB) Gain (dB) 20 19 Drain Efficiency (%) +25C +85 C -10 C 5 of 14 Rev. 07, 2010-11-04 Z Load Z Load G S 2200 MHz 0. 1 Z Source Z Source W Frequency W <--- A 2080 MHz Z Load W MHz R jX R jX 2080 2.42 -5.57 1.34 -4.23 2110 2.31 -5.36 1.32 -4.12 2140 2.21 -5.15 1.29 -4.01 2170 2.12 -4.96 1.27 -3.91 2200 2.04 -4.77 1.25 -3.81 0. 2 0. 3 See next page for reference circuit information Data Sheet 6 of 14 Rev. 07, 2010-11-04 0.3 0.2 0.1 D Z Source Z0 = 50 0.0 Broadband Circuit Impedance DT OW ARD LOA GT HS N E L VE Confidential, Limited Internal Distribution 0.1 - W AV E LE NGT H S T OW A RD G PTFB212503EL PTFB212503FL PTFB212503EL PTFB212503FL Confidential, Limited Internal Distribution Reference Circuit C802 1000 pF S2 8 C801 1000 pF C803 1000 pF 4 In Out NC 2 1 NC 3 6 7 5 R802 100 Ohm R804 1200 Ohm 2 C 4 1 S B 3 S3 S1 R801 10 Ohm 3 E R805 1300 Ohm R803 10 Ohm TL104 TL138 TL120 TL110 R102 10 Ohm TL129 2 TL133 TL108 3 1 TL128 TL113 2 3 1 TL136 C104 10 pF TL103 TL124 RF_IN C101 7.5 pF TL126 TL105 TL137 TL130 TL116 TL115 TL117 TL119 TL107 TL123 TL122 1 C105 4700000 pF 3 3 GATE DUT (Pin A) TL118 C102 2.4 pF 1 TL102 TL112 H=20 mil RO/RO4350B1 4 2 TL111 e r=3.48 TL132 TL106 2 1 2 3 C106 4700000 pF 2 C103 10 pF 3 TL125 1 TL101 R101 10 Ohm TL131 TL121 TL135 TL134 TL109 TL127 TL114 3 2 b 2 1 2 5 0 3e f l _ b d i n _ 0 8- 0 4 - 2 0 1 0 1 Reference circuit input schematic for = 2170 MHz TL228 TL206 TL209 TL231 1 C204 10000000pF TL230 2 1 3 TL226 1 2 TL232 3 1 2 3 VDD C210 10000000 pF C208 1000000 pF C206 2200000 pF TL208 TL229 2 3 DUT (Pin D) C201 1.2 pF TL221 DRAIN DUT (Pin C) TL218 TL201 TL215 TL217 TL224 TL207 TL223 2 1 DUT (Pin D) e TL204 TL219 C203 6.2 pF TL202 TL203 TL220 TL225 RF_OUT 4 TL222 r=3.48 H=20 mil RO/RO4350B1 TL216 3 C207 2200000 pF TL205 TL234 TL214 2 C202 1.2 pF C209 1000000 pF C205 10000000 pF TL213 3 1 b 2 1 2 5 0 3e f l _ b d o u t _0 8 - 0 4 - 2 0 1 0 2 TL233 3 2 1 TL227 Reference circuit output schematic for = 2170 MHz Data Sheet 1 TL210 TL212 2 TL211 3 1 3 7 of 14 C211 10000000 pF VDD Rev. 07, 2010-11-04 PTFB212503EL PTFB212503FL Confidential, Limited Internal Distribution Reference Circuit (cont.) Description DUT PTFB212503EL or PTFB212503FL PCB 0.508 mm [.020"] thick, er = 3.48, Rogers 4350, 1 oz. copper Electrical Characteristics at 2170 MHz Transmission Electrical Dimensions: mm Line Characteristics Dimensions: mils Input TL101 0.043 l, 54.17 W W = 1.016, L = 3.594 W = 40, L = 142 TL102 0.107 l, 63.89 W W = 0.762, L = 9.050 W = 30, L = 356 TL103 0.044 l, 63.89 W W = 0.762, L = 3.734 W = 30, L = 147 TL104 0.031 l, 34.72 W W = 1.981, L = 2.540 W = 78, L = 100 TL105 W1 = 1.270, W2 = 2.286 W1 = 50, W2 = 90 TL106 W1 = 17.780, W2 = 12.700 W1 = 700, W2 = 500 W1 = 13.970, W2 = 5.334, L = 2.032 W1 = 550, W2 = 210, L = 80 TL107 (taper) 0.027 l, 6.67 W / 15.80 W TL108, TL109 0.012 l, 54.17 W W1 = 1.016, W2 = 1.016, W3 = 1.016 W1 = 40, W2 = 40, W3 = 40 TL110 0.012 l, 54.17 W W1 = 1.016, W2 = 1.270, W3 = 1.016 W1 = 40, W2 = 50, W3 = 40 TL111, TL112 0.012 l, 63.89 W TL113, TL114, TL121 W1 = 0.762, W2 = 0.762, W3 = 1.016 W1 = 30, W2 = 30, W3 = 40 W = 1.016 W = 40 W = 210, L = 0 TL115 0.000 l, 15.80 W W = 5.334, L = 0.000 TL116 (taper) 0.013 l, 15.80 W / 47.12 W W1 = 5.334, W2 = 1.270, L = 0.991 W1 = 210, W2 = 50, L = 39 TL117 0.000 l, 15.80 W W1 = 5.334, W2 = 5.334, W3 = 0.025 W1 = 210, W2 = 210, W3 = 1 TL118 0.000 l, 144.35 W W = 0.025, L = 0.025 W = 1, L = 1 TL119 0.000 l, 15.80 W W = 5.334, L = 0.000 W = 210, L = 0 TL120 0.018 l, 54.17 W W = 1.016, L = 1.524 W = 40, L = 60 W1 = 13.970, W2 = 1.016, W3 = 13.970 W4 = 1.016 W1 = 550, W2 = 40, W3 = 550, W4 = 40 TL122 TL123 0.005 l, 6.67 W W = 13.970, L = 0.381 W = 550, L = 15 TL124 0.032 l, 47.12 W W = 1.270, L = 2.692 W = 50, L = 106 TL125, TL137 0.026 l, 54.17 W W = 1.016, L = 2.159 W = 40, L = 85 TL126 0.016 l, 31.24 W W = 2.286, L = 1.270 W = 90, L = 50 TL127, TL128 0.095 l, 54.17 W W = 1.016, L = 8.001 W = 40, L = 315 TL129 0.012 l, 54.17 W W = 1.016, L = 1.016 W = 40, L = 40 TL130 0.134 l, 47.12 W W = 1.270, L = 11.151 W = 50, L = 439 TL131 0.012 l, 54.17 W W = 1.016, L = 1.021 W = 40, L = 40 TL132 0.053 l, 6.67 W W = 13.970, L = 4.064 W = 550, L = 160 TL133, TL134 0.030 l, 54.17 W W = 1.016, L = 2.540 W = 40, L = 100 TL135, TL136 0.002 l, 54.17 W W = 1.016, L = 0.127 W = 40, L = 5 W1 = 1.016, W2 = 1.981 W1 = 40, W2 = 78 TL138 table continued on page 9 Data Sheet 8 of 14 Rev. 07, 2010-11-04 PTFB212503EL PTFB212503FL Confidential, Limited Internal Distribution Reference Circuit (cont.) Electrical Characteristics at 2170 MHz Transmission Electrical Line Characteristics Dimensions: mm Dimensions: mils Output TL201 0.054 l, 4.84 W W = 19.685, L = 4.064 W = 775, L = 160 TL202, TL203 0.016 l, 28.85 W W = 2.540, L = 1.270 W = 100, L = 50 TL204 0.078 l, 39.51 W W = 1.651, L = 6.426 W = 65, L = 253 TL205 0.032 l, 16.90 W W = 4.928, L = 2.540 W = 194, L = 100 TL206 0.032 l, 17.05 W W = 4.877, L = 2.540 W = 192, L = 100 W1 = 17.780, W2 = 0.025, W3 = 17.780 W4 = 0.025 W1 = 700, W2 = 1, W3 = 700, W4 = 1 TL207 TL208, TL211 0.092 l, 25.04 W W = 3.048, L = 7.341 W = 120, L = 289 TL209, TL234 0.010 l, 25.04 W W = 3.048, L = 0.762 W = 120, L = 30 TL210, TL232 0.098 l, 25.04 W W = 3.048, L = 7.823 W = 120, L = 308 TL212, TL229 0.038 l, 25.04 W W1 = 3.048, W2 = 3.048, W3 = 3.048 W1 = 120, W2 = 120, W3 = 120 TL213, TL214, TL230, 0.029 l, 25.04 W TL231 W1 = 3.048, W2 = 3.048, W3 = 2.286 W1 = 120, W2 = 120, W3 = 90 TL215 0.003 l, 4.84 W W = 19.685, L = 0.254 W = 775, L = 10 TL216 (taper) 0.074 l, 5.33 W / 39.51 W W1 = 17.780, W2 = 1.651, L = 5.588 W1 = 700, W2 = 65, L = 220 TL217 (taper) 0.010 l, 4.84 W / 5.33 W TL218 W1 = 19.685, W2 = 17.780, L = 0.762 W1 = 775, W2 = 700, L = 30 W1 = 12.700, W2 = 17.780 W1 = 500, W2 = 700 TL219 W1 = 1.651, W2 = 2.540 W1 = 65, W2 = 100 TL220 W1 = 1.270, W2 = 2.540 W1 = 50, W2 = 100 TL221, TL222 0.000 l, 144.35 W W = 0.025, L = 0.025 W = 1, L = 1 TL223, TL224 0.000 l, 5.33 W W = 17.780, L = 0.025 W = 700, L = 1 TL225 0.047 l, 47.12 W W = 1.270, L = 3.912 W = 50, L = 154 TL226, TL233 0.023 l, 25.04 W W1 = 3.048, W2 = 3.048, W3 = 1.829 W1 = 120, W2 = 120, W3 = 72 Data Sheet 9 of 14 Rev. 07, 2010-11-04 PTFB212503EL PTFB212503FL Confidential, Limited Internal Distribution Reference Circuit (cont.) Circuit Assembly Information LTN/PTFB212503EF Test Fixture Part No. Find Gerber files for this test fixture on the Infineon Web site at http://www.infineon.com/rfpower RO4350, .020 C802 RO4350, .020 (60) C204 C801 R804 S3 C803 R805 + R802 C208 S1 R801 10 F C206 + R803 (60) S2 C210 C201 R102 C104 C105 RF_IN RF_OUT C101 C203 C102 C106 R101 C202 C103 C205 C207 + 10 F C209 C211 PTFB212503_OUT_04 PTFB212503_IN_04 b212503efl_CD_08-04-2010 Reference circuit assembly diagram (not to scale) Data Sheet 10 of 14 Rev. 07, 2010-11-04 PTFB212503EL PTFB212503FL Confidential, Limited Internal Distribution Reference Circuit (cont.) Components Information Component Description Suggested Manufacturer P/N Input C101 Chip capacitor, 7.5 pF ATC ATC100B7R5BW500XB C102 Chip capacitor, 2.4 pF ATC ATC100B2R4BW500XB C103, C104 Chip capacitor, 10 pF ATC ATC100A100JW500XB C105, C106 Chip capacitor, 4.7 F Digi-Key 493-2372-2-ND C801, C802, C803 Capacitor, 1000 pF Digi-Key PCC1772CT-ND R101, R102, R803 Resistor, 10 W Digi-Key P10ECT-ND R801 Resistor, 10 W Digi-Key P10GCT-ND R802 Resistor, 100 W Digi-Key P101ECT-ND R804 Resistor, 1200 W Digi-Key P1.2KGCT-ND R805 Resistor, 1300 W Digi-Key P1.3KGCT-ND S1 Transistor Digi-Key BCP56 S2 Voltage Regulator Digi-Key LM78L05ACM-ND S3 Potentiometer, 2k W Digi-Key 3224W-202ECT-ND Output C201, C202 Chip capacitor, 1.2 pF ATC ATC100A1R2BW500XB C203 Chip capacitor, 6.2 pF ATC ATC100B6R2JW500XB C204, C211 Capacitor, 10 F Digi-Key 587-1818-2-ND C205, C210 Capacitor, 10 F Garrett Electronics 281M5002106K C206, C207 Chip capacitor, 2.2 F Digi-Key 445-1447-2-ND C208, C209 Chip capacitor, 1 F Digi-Key 445-1411-2-ND Data Sheet 11 of 14 Rev. 07, 2010-11-04 PTFB212503EL PTFB212503FL Confidential, Limited Internal Distribution Package Outline Specifications Package H-33288-6 45 X 2.032 [45 X .080] 4X 30 4X R1.524 [R.060] 2X 5.080 [.200] (2 PLS) 4X 1.143 [.045] (4 PLS) V D 4.889.510 [.192.020] V S CL 2X R1.626 [R.064] G E 9.398 [.370] 9.779 [.385] 19.558.510 [.770.020] F H -33288 - 6_ po _02 -18 - 2010 CL 2X 12.700 [.500] 2X 22.860 [.900] 27.940 [1.100] 22.352.200 [.880.008] 1.575 [.062] (SPH) 1.016 [.040] 4.039 +.254 -. 127 010 [.159 +. -. 005 ] CL 34.036 [1.340] Diagram Notes--unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances 0.127 [.005] unless specified otherwise. 4. Pins: G = gate, S = source, D = drain, V = VDD, E, F = N.C. 5. Lead thickness: 0.10 + 0.051/-0.025 mm [.004 +0.002/-0.001 inch]. 6. Gold plating thickness: 0.25 micron [10 microinch] max. Data Sheet 12 of 14 Rev. 07, 2010-11-04 PTFB212503EL PTFB212503FL Confidential, Limited Internal Distribution Package Outline Specifications (cont.) Package H-34288-4/2 22.860 [.900] 45 X 2.032 [45 X .080] 2X 5.080 [.200] 2X 1.143 [.045] C L 2X 30 V D V 9.779 [.385] 9.398 [.370] C L 4X R0.508+.381 -.127 R.020+.015 -.005 19.558.510 [.770.020] G ] [ 4.889.510 [.192.020] 2X 12.700 [.500] 4.039+.254 -.127 .159+.010 -.005 22.352.200 [.880.008] [ ] C 66065-A0003- C743- 01-0027 H- 34288- 4_ 2 .dwg 1.575 [.062] (SPH) C L 1.016 [.040] 23.114 [.910] S Diagram Notes--unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances 0.127 [.005] unless specified otherwise. 4. Pins: D = drain; S = source; G = gate; V = VDD. 5. Lead thickness: 0.10 + 0.051/-0.025 mm [.004 +0.002/-0.001 inch]. 6. Gold plating thickness: 0.25 micron [10 microinch] max. Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Data Sheet 13 of 14 Rev. 07, 2010-11-04 PTFB212503EL V1/ PTFB212503FL V2 Confidential, Limited Internal Distribution Revision History: 2010-11-04 Previous Version: 2010-08-05, Data Sheet Page Subjects (major changes since last revision) 1,2, 12 Changed eared flange package type 1 Updated VSWR specification to 10:1 Data Sheet We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International Edition 2010-11-04 Published by Infineon Technologies AG 81726 Munich, Germany (c) 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 14 of 14 Rev. 07, 2010-11-04