{yz SGS-THOMSON Vf iicrozvzcrromics BD533/BD534 BD535/BD536 BD537/BD538 EPITAXIAL-BASE NPN/PNP DESCRIPTION The BD533, BD535 and BD537 are silicon epitaxial- base NPN power transistors in Jedec TO-220 plas- tic package, intended for use in medium power li- near and switching applications. The complementary PNP types are the BD534, BD536 and BD538 respectively. INTERNAL SCHEMATIC DIAGRAMS ABSOLUTE MAXIMUM RATINGS Value Symbol Parameter NPN |BD533|BD535|8D537| Unit PNP* | BD534 | BD536 | BD538 Veso Collector-base Voltage (l_ = 0) 45 60 80 Vv Vces Collector-emitter Voltage (Vae = 0) 45 60 80 v Vceo Coltector-emitter Voltage (Ip = 0) 45 60 80 v Veso Emitter-base Voltage (Ic = 0) 5 Vv Jo. de Collector and Emitter Current 8 A lp Base Current 1 A Prot Total Power Dissipation at Tcase < 25 C 50 WwW T stg Storage Temperature 65 to 150 C Tj Junction Temperature 150 C * For PNP types voltage and current values are negative. November 1988 1/4I I wR we ee THERMAL DATA Rthj-case | Thermal Resistance Junction-case Max 2.5 CW Rih-anb | Thermal Resistance Junction-ambient Max 70 C/W ELECTRICAL CHARACTERISTICS (T.s = 25 C unless otherwise specified) Symbol 7 Parameter Test Conditions Min. Typ. Max. Unit topo Collector Cutoff Current for BD33/34 Vcg = 45 V 100 uA (Ie = 0) for BD535/36 Vca =60V 100 LA for BD537/38 Vcp =80V 100 pA loes Collector Cutoff Current for BD533/34 Vce =45 V 4100 WA (Vee = 0) for BD535/36 Vce =60V 100 pA for BD537/38 Vce =80V 100 WA | lepo Emitter Cutoff Current Vea =5V 4 mA (I = 9) Voeoisus;*| Coliectar-emitter Sustaining lo = 100 mA for BD533/34 45 Vv Voltage (Ip = 0) for BD535/36 60 V for BD537/38 80 V Veeisaty | Collector-emitter Saturation Ic =2A lp =02A 0.8 Vv Voltage Ic =6A I3 =O06A 0.8 Vv Vee" Base-emitter Voltage Ic =2A Voce =2V 15 Vv | hre* DC Current Gain lc =10 mA Vee =5V for BD533/34 20 for BD535/36 20 for BD537/38 15 lo = 500 mA Vce =2V 40 Ic =2A Vee =2V for BD533/34 25 for BD535/36 25 for BD537/38 15 fr Transition Frequency Ico = 500 mA Vee=1V 3 12 MHz hee J Ic =2A Voce =2V 30 75 groups** : Ic =3A Vee =2V 15 K lc =2A Vee =2V 40 100 Ic =3A Voce =2V 20 * Pulsed : pulse duration = 300 ts, duty cycle = 1.5 %. For PNP types voltage and current values are negative. ki SGS-THOMSON MICRCELECTRONICSeee Te ewe wwe Safe Operating Areas. *FOR SINGLE NON REPETITIVE BDS35/536 B0533/534 10" 1 0 10 Yet) DC Current Gain (PNP types). bre 4 > soa 2 4 68 > + 68 10? wo" 1 -Ic ta) Collector-emitter Saturation Voltage (PNP types). ce isat), , oe 10" ~Igta) iy SGS-THOMSON DC Current Gain (NPN types). hee a . 2 4 @8 z 4 68 2 4 64 0? 10 1 1c (A) Collector-emitter Saturation Voltage (NPN types). cetaan, ), 1? cS sa wr 1 Ie (A) Base-emitter Saturation Voltage (NPN types). Betsat) {v) 15 107 ' 1, (4) 3/4 MICROELECTROMICS 173B39 BSH ISO II QO, Ge Base-emitter Saturation Voltage (PNP types). 10" Ig 4/4 ky SGS-THOMSON Jf iickossctromes 174