EDI88512CA 512Kx8 Monolithic SRAM, SMD 5962-95600 FEATURES Access Times of 15, 17, 20, 25, 35, 45, 55ns The EDI88512CA is a 4 megabit Monolithic CMOS Static RAM. Data Retention Function (LPA version) The 32 pin DIP pinout adheres to the JEDEC evolutionary standard for the four megabit device. All 32 pin packages are pin for pin upgrades for the single chip enable 128K x 8, the EDI88128CS. Pins 1 and 30 become the higher order addresses. TTL Compatible Inputs and Outputs Fully Static, No Clocks Organized as 512Kx8 The 36 pin revolutionary pinout also adheres to the JEDEC standard for the four megabit device. The center pin power and ground pins help to reduce noise in high performance systems. The 36 pin pinout also allows the user an upgrade path to the future 2Mx8. Commercial, Industrial and Military Temperature Ranges 32 lead JEDEC Approved Evolutionary Pinout * Ceramic Sidebrazed 600 mil DIP (Package 9) * Ceramic Sidebrazed 400 mil DIP (Package 326) A Low Power version with Data Retention (EDI88512LPA) is also available for battery backed applications. Military product is available compliant to Appendix A of MIL-PRF-38535. * Ceramic 32 pin Flatpack (Package 344) * Ceramic Thin Flatpack (Package 321) * Ceramic SOJ (Package 140) 36 lead JEDEC Approved Revolutionary Pinout *This product is subject to change without notice. * Ceramic Flatpack (Package 316) * Ceramic SOJ (Package 327) * Ceramic LCC (Package 502) Single +5V (10%) Supply Operation FIGURE 1 - PIN CONFIGURATION 36 PIN TOP VIEW A0 A1 A2 A3 A4 CS# I/O0 I/O1 Vcc Vss I/O2 I/O3 WE# A5 A6 A7 A8 A9 1 2 3 4 5 6 7 8 36 pin 9 10 Revolutionary 11 12 13 14 15 16 17 18 PIN DESCRIPTION 32 PIN TOP VIEW 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 NC A18 A17 A16 A15 OE# I/O7 I/O6 Vss Vcc I/O5 I/O4 A14 A13 A12 A11 A10 NC A18 A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 Vss 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 pin Evolutionary 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 Vcc A15 A17 WE# A13 A8 A9 A11 OE# A10 CS# I/O7 I/O6 I/O5 I/O4 I/O3 I/O0-7 Data Inputs/Outputs A0-18 Address Inputs WE# Write Enables CS# Chip Selects OE# Output Enable VCC Power (+5V 10%) VSS Ground NC Not Connected BLOCK DIAGRAM Memory Array A0-18 Address Buffer Address Decoder I/O Circuits I/O0-7 WE# CS# OE# Microsemi Corporation reserves the right to change products or specifications without notice. February 2011 Rev. 13 (c) 2011 Microsemi Corporation. All rights reserved. 1 Microsemi Corporation * (602) 437-1520 * www.whiteedc.com www.microsemi.com EDI88512CA ABSOLUTE MAXIMUM RATINGS Parameter Voltage on any pin relative to Vss TRUTH TABLE Value Unit -0.5 to 7.0 V OE# X H L X Operating Temperature TA (Ambient) Commercial 0 TA +70 C -40 TA +85 C Military -55 TA +125 C Storage Temperature, Plastic -65 TA +150 C Power Dissipation 1.5 W Output Current 20 mA Junction Temperature, TJ 175 C Industrial CS# H L L L WE# X H H L Mode Standby Output Deselect Read Write Output High Z High Z Data Out Data In Power Icc2, Icc3 Icc1 Icc1 Icc1 RECOMMENDED OPERATING CONDITIONS Parameter Supply Voltage Supply Voltage Input High Voltage Input Low Voltage NOTE: Stress greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions greater than those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Symbol Min Typ Max Unit VCC VSS VIH VIL 4.5 0 2.2 -0.3 5.0 0 -- -- 5.5 0 VCC + 0.3 +0.8 V V V V CAPACITANCE (TA = +25C) Parameter Symbol Condition Max Unit Address Lines CI VIN = Vcc or Vss, f = 1.0MHz 12 pF Data Lines CO VOUT = Vcc or Vss, f = 1.0MHz 14 pF These parameters are sampled, not 100% tested. DC CHARACTERISTICS (VCC = 5V, TA = -55C to +125C) Parameter Symbol Conditions Input Leakage Current ILI VIN = 0V to VCC Output Leakage Current ILO VI/O = 0V to VCC WE#, CS# = VIL, II/O = 0mA, Min Cycle (17ns) (20 -55ns) Min Max Units -10 10 A -10 10 A -- -- 250 225 mA mA -- 60 mA -- -- 25 20 mA mA Operating Power Supply Current ICC1 Standby (TTL) Power Supply Current ICC2 CS# VIH, VIN VIL, VIN VIH ICC3 CS# VCC -0.2V VIN Vcc -0.2V or VIN 0.2V Output Low Voltage VOL IOL = 6.0mA -- 0.4 V Output High Voltage VOH IOH = -4.0mA 2.4 -- V Full Standby Power Supply Current CA LPA NOTE: DC test conditions: VIL = 0.3V, VIH = Vcc -0.3V AC TEST CONDITIONS Figure 1 Figure 2 Vcc Vcc Input Pulse Levels 480 VSS to 3.0V Input Rise and Fall Times 480 Input and Output Timing Levels Q Q 255 30pF Output Load 255 5pF 5ns 1.5V Figure 1 NOTE: For tEHQZ, tGHQZ and tWLQZ, CL = 5pF Figure 2) Microsemi Corporation reserves the right to change products or specifications without notice. February 2011 Rev. 13 (c) 2011 Microsemi Corporation. All rights reserved. 2 Microsemi Corporation * (602) 437-1520 * www.whiteedc.com www.microsemi.com EDI88512CA AC CHARACTERISTICS - READ CYCLE (VCC = 5.0V, Vss = 0V, -55C TA +125C) Symbol Parameter 15ns 17ns Max Min 20ns Max tAVAV tRC 15 Address Access Time tAVQV tAA 15 17 20 25 35 45 55 Chip Enable Access Time tELQV tACS 15 17 20 25 35 45 55 Chip Enable to Output in Low Z (1) tELQX tCLZ 2 Chip Disable to Output in High Z (1) tEHQZ tCHZ 0 Output Hold from Address Change tAVQX tOH 0 Output Enable to Output Valid tGLQV tOE Output Enable to Output in Low Z (1) tGLQX tOLZ 0 Output Disable to Output in High Z(1) tGHQZ tOHZ 0 3 7 8 0 8 0 0 0 10 7 0 8 0 15 10 Max 0 20 0 20 30 0 0 Max Min ns ns ns 25 15 ns ns 0 0 Units ns 3 15 0 Min 55 0 0 0 Max 3 12 0 Min 45 0 10 0 Max 3 0 8 Min 35 3 0 0 7 25 3 0 Max 55ns Read Cycle Time 20 Min 45ns Min 7 Max 35ns Alt. 17 Min 25ns JEDEC ns ns 20 0 Max Min 20 ns Max Units 1. This parameter is guaranteed by design but not tested. AC CHARACTERISTICS - WRITE CYCLE (VCC = 5.0V, VSS = 0V, -55C TA +125C) Symbol Parameter 15ns 17ns Max tWC 15 17 20 25 35 45 55 ns Chip Enable to End of Write tELWH tELEH tCW tCW 13 13 14 14 15 15 17 17 25 25 30 30 50 50 ns ns Address Setup Time tAVWL tAVEL tAS tAS 0 0 0 0 0 0 0 0 0 0 0 0 0 0 ns ns Address Valid to End of Write tAVWH tAVEH tAW tAW 13 13 14 14 15 15 17 17 25 25 30 30 50 50 ns ns Write Pulse Width tWLWH tWLEH tWP tWP 13 13 14 14 15 15 17 17 25 25 30 30 45 45 ns ns Write Recovery Time tWHAX tEHAX tWR tWR 0 0 0 0 0 0 0 0 0 0 0 0 0 0 ns ns Data Hold Time tWHDX tEHDX tDH tDH 0 0 0 0 0 0 0 0 0 0 0 0 0 0 ns ns Write to Output in High Z (1) tWLQZ tWHZ 0 Data to Write Time tDVWH tDVEH tDW tDW 8 8 8 8 10 10 12 12 20 20 25 25 40 30 ns ns Output Active from End of Write (1) tWHQX tWLZ 0 0 0 0 0 0 0 ns 8 Min 0 Max 10 Min 55ns tAVAV 0 Max 45ns Write Cycle Time 8 Min 35ns Min 0 Max 25ns Alt. 8 Min 20ns JEDEC 0 25 0 30 0 30 ns 1. This parameter is guaranteed by design but not tested. Microsemi Corporation reserves the right to change products or specifications without notice. February 2011 Rev. 13 (c) 2011 Microsemi Corporation. All rights reserved. 3 Microsemi Corporation * (602) 437-1520 * www.whiteedc.com www.microsemi.com EDI88512CA FIGURE 2 - TIMING WAVEFORM - READ CYCLE tAVAV ADDRESS tAVAV ADDRESS tAVQV ADDRESS 1 ADDRESS 2 tAVQV tAVQX CS# tELQV tELQX tEHQZ tGLQV tGLQX tGHQZ OE# DATA I/O DATA 1 DATA 2 DATA OUT READ CYCLE 1 (WE# HIGH; OE#, CS# LOW) READ CYCLE 2 (WE# HIGH) FIGURE 3 - WRITE CYCLE - WE# CONTROLLED tAVAV ADDRESS tAVWH tELWH tWHAX CS# tAVWL tWLWH WE# tWHDX tDVWH DATA IN DATA VALID tWLQZ tWHQX HIGH Z DATA OUT WRITE CYCLE 1, WE# CONTROLLED FIGURE 4 - WRITE CYCLE - CS# CONTROLLED tAVAV ADDRESS tAVEH tELEH tEHAX CS# tAVEL tWLEH WE# tDVEH DATA IN tEHDX DATA VALID HIGH Z DATA OUT WRITE CYCLE 2, CS# CONTROLLED Microsemi Corporation reserves the right to change products or specifications without notice. February 2011 Rev. 13 (c) 2011 Microsemi Corporation. All rights reserved. 4 Microsemi Corporation * (602) 437-1520 * www.whiteedc.com www.microsemi.com EDI88512CA DATA RETENTION CHARACTERISTICS (EDI88512LPA ONLY) (-55C TA +125C) Characteristic Low Power Version only Sym Conditions Min Typ Max Units Data Retention Voltage Data Retention Quiescent Current VCC ICCDR VCC = 2.0V CS# VCC -0.2V 2 - - - - 2 V mA Chip Disable to Data Retention Time Operation Recovery Time tCDR TR VIN VCC -0.2V or VIN 0.2V 0 tAVAV - - - - ns ns FIGURE 5 - DATA RETENTION - CS# CONTROLLED DATA RETENTION MODE 4.5V VCC VCC 4.5V tCDR CS# tR CS# = VCC -0.2V DATA RETENTION, CS# CONTROLLED Microsemi Corporation reserves the right to change products or specifications without notice. February 2011 Rev. 13 (c) 2011 Microsemi Corporation. All rights reserved. 5 Microsemi Corporation * (602) 437-1520 * www.whiteedc.com www.microsemi.com EDI88512CA PACKAGE 9: 32 LEAD SIDEBRAZED CERAMIC DIP, SMD 5962-95600XXMXA 1.616 1.584 0.200 0.125 0.061 0.017 0.620 0.600 0.060 0.040 Pin 1 Indicator 0.100 TYP 0.020 0.016 0.155 0.115 0.600 NOM 15 x 0.100 = 1.500 ALL DIMENSIONS ARE IN INCHES PACKAGE 326: 32 LEAD SIDEBRAZED CERAMIC DIP 1.616 1.584 0.420 0.400 Pin 1 Indicator 1 0.200 0.125 0.100 TYP 0.020 0.016 0.061 0.017 0.155 0.115 1 0.400 NOM 15 x 0.100 = 1.500 ALL DIMENSIONS ARE IN INCHES PACKAGE 140: 32 LEAD CERAMIC SOJ, SMD 5962-95600XXMUA 0.010 0.006 0.019 0.015 0.840 0.820 0.444 0.430 0.379 0.050 TYP 0.155 0.106 ALL DIMENSIONS ARE IN INCHES Microsemi Corporation reserves the right to change products or specifications without notice. February 2011 Rev. 13 (c) 2011 Microsemi Corporation. All rights reserved. 6 Microsemi Corporation * (602) 437-1520 * www.whiteedc.com www.microsemi.com EDI88512CA PACKAGE 316: 36 PIN CERAMIC FLATPACK, SMD 5962-95600XXMTA 0.920 0.010 0.007 0.003 0.370 0.250 1.00 REF 0.395 0.385 0.515 0.505 0.040 0.030 Pin 1 0.045 0.020 0.019 0.015 0.125 0.100 0.050 TYP ALL DIMENSIONS ARE IN INCHES PACKAGE 321: 32 PIN THINPACKTM FLATPACK, SMD 5962-95600XXMYA 0.838 MAX 0.567 0.427 0.559 0.429 0.050 TYP 0.008 0.005 0.020 0.030 0.118 MAX. 0.016 0.008 ALL DIMENSIONS ARE IN INCHES PACKAGE 344: 32 PIN CERAMIC FLATPACK, SMD 5962-95600XXM9A +0.002 0.006 -0.001 0.423 0.004 0.024 REF. 0.112 MAX. 0.838 MAX. 0.050 0.002 TYP. 0.016 0.008 ALL DIMENSIONS ARE IN INCHES 0.300 0.010 Microsemi Corporation reserves the right to change products or specifications without notice. February 2011 Rev. 13 (c) 2011 Microsemi Corporation. All rights reserved. 7 Microsemi Corporation * (602) 437-1520 * www.whiteedc.com www.microsemi.com EDI88512CA PACKAGE 327: 36 LEAD CERAMIC SOJ, SMD 5962-95600XXMMA 0.010 0.006 0.019 0.015 0.920 0.940 0.050 TYP 0.444 0.434 0.379 0.155 0.106 ALL DIMENSIONS ARE IN INCHES PACKAGE 502: 36 LEAD CERAMIC LCC 0.135 0.115 0.100 0.080 36 1 0.100 TYP 0.009 TYP 0.028 0.022 0.930 0.910 0.860 0.840 0.050 BSC 0.460 0.445 0.066 0.054 ALL DIMENSIONS ARE IN INCHES Microsemi Corporation reserves the right to change products or specifications without notice. February 2011 Rev. 13 (c) 2011 Microsemi Corporation. All rights reserved. 8 Microsemi Corporation * (602) 437-1520 * www.whiteedc.com www.microsemi.com EDI88512CA ORDERING INFORMATION EDI 8 8 512 CA X X X MICROSEMI CORPORATION: SRAM: ORGANIZATION, 512Kx8: TECHNOLOGY: CA = CMOS Standard Power LPA = Low Power ACCESS TIME (ns): PACKAGE TYPE: C = 32 lead Sidebrazed DIP, 600 mil (Package 9) K = 36 lead Ceramic LCC (Package 502) N = 32 lead Ceramic SOJ (Package 140) T = 32 lead Sidebrazed DIP, 400 mil (Package 326) B32 = 32 pin Ceramic ThinpackTM Flatpack (Package 321) F32 = 32 pin Ceramic Flatpack (Package 344) F36 = 36 pin Ceramic Flatpack (Package 316) N36 = 36 lead Ceramic SOJ (Package 327) DEVICE GRADE: B = MIL-STD-883 Compliant M = Military Screened -55C TA +125C I = Industrial C = Commercial -40C TA +85C 0C TA +70C Microsemi Corporation reserves the right to change products or specifications without notice. February 2011 Rev. 13 (c) 2011 Microsemi Corporation. All rights reserved. 9 Microsemi Corporation * (602) 437-1520 * www.whiteedc.com www.microsemi.com EDI88512CA Document Title 512Kx8 Monolithic SRAM, SMD 5962-95600 Revision History Rev # History Release Date Status Rev 13 Changes (Pg. 1-10) February 2011 Final 13.1 Change document layout from White Electronic Designs to Microsemi 13.2 Add document Revision History page Microsemi Corporation reserves the right to change products or specifications without notice. February 2011 Rev. 13 (c) 2011 Microsemi Corporation. All rights reserved. 10 Microsemi Corporation * (602) 437-1520 * www.whiteedc.com www.microsemi.com