UCD7230
SLUS741C – NOVEMBER 2006 – REVISED MARCH 2007
ELECTRICAL CHARACTERISTICS (continued)V
DD
= P
VDD
= 12 V, 4.7- µF from V
DD
to A
GND
, 1 µF from P
VDD
to P
GND
, 0.1 µF from CSBIAS to AGND, 0.22 µF from BST toSW, T
A
= T
J
= -40°C to +125°C, R
CS+
= 5 k Ω, R
DLY
= 50 k Ωover operating free-air temperature range (unless otherwisenoted).
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
LOW-SIDE OUTPUT DRIVER (OUT2)
Source current
(3)
V
DD
= 12 V, IN = high, OUT2 = 5 V 2.2Sink current
(3)
V
DD
= 12 V, IN = low, OUT2 = 5 V 3.5
ASource current
(3)
V
DD
= 4.75 V, IN = high, OUT2 = 0 1.6V
DD
= 4.75 V, IN = low, OUT2 =Sink current
(3)
24.75 VRise time
(3)
C
LOAD
= 2.2 nF, V
DD
= 12 V 15
nsFall time
(3)
C
LOAD
= 2.2 nF, V
DD
= 12 V 15Output with VDD <UVLO V
DD
= 1.0 V, Isink = 10 mA 0.8 1.2 VPropagation delay from IN to C
LOAD
= 2.2 nF, IN rising, SW = 2.5
30 nsOUT2
(3)
V, BST = PVDD = VDD = 12 V
HIGH-SIDE OUTPUT DRIVER (OUT1)
V
DD
= 12 V, BST = 12 V IN = High,Source current
(3)
1.7OUT1 = 5 VV
DD
= 12 V, BST = 12 V IN = Low,Sink current
(3)
3.5OUT1 = 5 V
AV
DD
= 4.75 V = BST = 4.75 V, IN =Source current
(3)
1High, OUT1 = 0V
DD
= 4.75 V, BST = 4.75 V, IN =Sink current
(3)
2.4Low, OUT1 = 4.75 VC
LOAD
= 2.2 nF OUT1 to SW, VDDRise time
(3)
20= 12 VC
LOAD
= 2.2 nF OUT1 to SW, V
DD
=Fall time
(3)
15 ns12 VPropagation delay from IN to C
LOAD
= 2.2 nF, IN falling, SW = 2.5
30OUT1
(3)
V, BST = PVDD = VDD = 12 V
(3) As designed and characterized. Not 100% tested in production.
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