Document Number: 94420 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 02-Jul-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
Thyristor/Diode and Thyristor/Thyristor
(SUPER MAGN-A-PAK Power Modules), 500 A
VSKT500-..PbF, VSKH500-..PbF, VSKL500-..PbF
Vishay Semiconductors
FEATURES
• High current capability
• High surge capability
• Industrial standard package
• 3000 VRMS isolating voltage with non-toxic
substrate
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
TYPICAL APPLICATIONS
• Motor starters
• DC motor controls - AC motor controls
• Uninterruptable power supplies
ELECTRICAL SPECIFICATIONS
PRODUCT SUMMARY
IT(AV) , IF(AV) 500 A
SUPER MAGN-A-PAK
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
IT(AV) , IF(AV) 82 °C 500 A
IT(RMS)
785 A
TC82 °C
ITSM
50 Hz 17.8 kA
60 Hz 18.7
I2t50 Hz 1591 kA2s
60 Hz 1452
I2t15 910 kA2s
VRRM Range 800 to 1600 V
TStg Range - 40 to 150 °C
TJRange - 40 to 130
VOLTAGE RATINGS
TYPE NUMBER VOLTAGE
CODE
VRRM/VDRM, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
IRRM/IDRM MAXIMUM
AT TJ = TJ MAXIMUM
mA
VSK.500
08 800 900
100
12 1200 1300
14 1400 1500
16 1600 1700
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94420
2DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 02-Jul-10
VSKT500-..PbF, VSKH500-..PbF, VSKL500-..PbF
Vishay Semiconductors Thyristor/Diode and Thyristor/Thyristor
(SUPER MAGN-A-PAK Power Modules), 500 A
ON-STATE CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at case temperature
IT(AV),
IF(AV)
180° conduction, half sine wave 500 A
82 °C
Maximum RMS on-state current IT(RMS) 180° conduction, half sine wave at TC = 82 °C 785 A
Maximum peak, one-cycle,
non-repetitive on-state surge current
ITSM,
IFSM
t = 10 ms No voltage
reapplied
Sinusoidal
half wave,
initial TJ = TJ maximum
17.8
kA
t = 8.3 ms 18.7
t = 10 ms 100 % VRRM
reapplied
15.0
t = 8.3 ms 15.7
Maximum I2t for fusing I2t
t = 10 ms No voltage
reapplied
1591
kA2s
t = 8.3 ms 1452
t = 10 ms 100 % VRRM
reapplied
1125
t = 8.3 ms 1027
Maximum I2t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 15 910 kA2s
Low level value or threshold voltage VT(TO)1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.85 V
High level value of threshold voltage VT(TO)2 (I > x IT(AV)), TJ = TJ maximum 0.93
Low level value on-state slope resistance rt1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.36 m
High level value on-state slope resistance rt2 (I > x IT(AV)), TJ = TJ maximum 0.32
Maximum on-state voltage drop VTM Ipk = 1500 A, TJ = 25 °C, tp = 10 ms sine pulse 1.50 V
Maximum forward voltage drop VFM Ipk = 1500 A, TJ = 25 °C, tp = 10 ms sine pulse 1.50 V
Maximum holding current IHTJ = 25 °C, anode supply 12 V resistive load 500 mA
Maximum latching current IL1000
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum rate of rise of turned-on current dI/dt TJ = TJ maximum, ITM = 400 A, VDRM applied 1000 A/μs
Typical delay time td
Gate current 1 A, dIg/dt = 1 A/μs
Vd = 0.67 % VDRM, TJ = 25 °C 2.0
μs
Typical turn-off time tq
ITM = 750 A; TJ = TJ maximum, dI/dt = - 60 A/μs,
VR = 50 V, dV/dt = 20 V/μs, gate 0 V 100 200
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum critical rate of rise
of off-state voltage dV/dt TJ = 130 °C, linear to VD = 80 % VDRM 1000 V/μs
RMS insulation voltage VINS t = 1 s 3000 V
Maximum peak reverse and
off-state leakage current
IRRM,
IDRM
TJ = TJ maximum, rated VDRM/VRRM applied 100 mA
Document Number: 94420 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 02-Jul-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3
VSKT500-..PbF, VSKH500-..PbF, VSKL500-..PbF
Thyristor/Diode and Thyristor/Thyristor
(SUPER MAGN-A-PAK Power Modules), 500 A Vishay Semiconductors
Note
• Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power PGM TJ = TJ maximum, tp 5 ms 10 W
Maximum peak average gate power PG(AV) TJ = TJ maximum, f = 50 Hz, d% = 50 2.0
Maximum peak positive gate current +IGM
TJ = TJ maximum, tp 5 ms
3.0 A
Maximum peak positive gate voltage +VGM 20 V
Maximum peak negative gate voltage -VGM 5.0
Maximum DC gate current required to trigger IGT TJ = 25 °C, Vak 12 V 200 mA
DC gate voltage required to trigger VGT 3.0 V
DC gate current not to trigger IGD TJ = TJ maximum 10 mA
DC gate voltage not to trigger VGD 0.25 V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction operating
temperature range TJ- 40 to 130 °C
Maximum storage temperature range TStg - 40 to 150
Maximum thermal resistance,
junction to case per junction RthJC DC operation 0.065
K/W
Maximum thermal resistance,
case to heatsink RthC-hs 0.02
Mounting torque ± 10 %
SMAP to heatsink A mounting compound is recommended and
the torque should be rechecked after a period
of 3 hours to allow for the spread of the
compound.
6 to 8
Nm
busbar to SMAP 12 to 15
Approximate weight 1500 g
Case style See dimensions - link at the end of datasheet SUPER MAGN-A-PAK
RthJC CONDUCTION
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
180° 0.009 0.006
TJ = TJ maximum K/W
120° 0.011 0.011
90° 0.014 0.015
60° 0.021 0.022
30° 0.037 0.038
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94420
4DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 02-Jul-10
VSKT500-..PbF, VSKH500-..PbF, VSKL500-..PbF
Vishay Semiconductors Thyristor/Diode and Thyristor/Thyristor
(SUPER MAGN-A-PAK Power Modules), 500 A
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Fig. 3 - On-State Power Loss Characteristics
Fig. 4 - On-State Power Loss Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
60
70
80
90
100
110
120
130
0 100 200 300 400 500 600
30°
60°
90°
120°
180°
Average On-state Current (A)
Maximum Allowable Case Temperature (°C)
Conduction Angle
VSK.500.. Series
R (DC) = 0.065 K/ W
thJC
60
70
80
90
100
110
120
130
0 100 200 300 400 500 600 700 800 900
DC
30° 60°
90°
120°
180°
Average On-state Current (A)
Maximum Allowable Case Temperature (°C)
Conduc tion Period
VSK.500.. Serie s
R (DC) = 0.065 K/ W
thJC
0
100
200
300
400
500
600
700
0 100 200 300 400 500
RM S Li m i t
Conduction Angle
180°
120°
90°
60°
30°
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
VSK.500.. Serie s
Pe r Ju nc t io n
T = 1 3 0° C
J
0
100
200
300
400
500
600
700
800
900
1000
0 100 200 300 400 500 600 700 800
DC
180°
120°
90°
60°
30°
RM S Li m i t
Conduction Period
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
VSK.500.. Series
Pe r Ju n c t io n
T = 1 3 0 ° C
J
7000
8000
9000
10000
11000
12000
13000
14000
15000
16000
110100
Numbe r Of Equal Amp lit ude Half Cyc le Current Pulses (N)
Peak Half Sine Wave On-sta te Current (A)
Init ial T = 130°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
At Any Rated Load Condition And With
Ra te d V Ap p lie d Fo llowing Surg e .
RRM
VSK. 500.. Se rie s
Pe r Ju n c t i o n
6000
8000
10000
12000
14000
16000
18000
0.01 0.1 1
Peak Half Sine Wave On-state Current (A)
Pulse Tra in Dura tion (s)
Maximum Non Rep etitive Surge Current
Versus Pulse Train Dura tion. Control
Of Conduction May Not Be Maintained.
Initial T = 130°C
No Volta ge Rea pplied
Ra t e d V Re a p p li e d
RRM
J
VSK.500.. Serie s
Pe r Ju n c t io n
Document Number: 94420 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 02-Jul-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 5
VSKT500-..PbF, VSKH500-..PbF, VSKL500-..PbF
Thyristor/Diode and Thyristor/Thyristor
(SUPER MAGN-A-PAK Power Modules), 500 A Vishay Semiconductors
Fig. 7 - On-State Power Loss Characteristics
Fig. 8 - On-State Power Loss Characteristics
Fig. 9 - On-State Power Loss Characteristics
0 20406080100120
Maximum Allowable Ambient Temperature (°C)
R=0.07K/W-DeltaR
0.09K/W
0.12K
/W
0.16K/W
0.2K/W
0.3K
/W
0.4K
/W
0.6K
/W
thS
A
0
50
100
150
200
250
300
350
400
450
500
550
600
650
700
750
0 100 200 300 400 500 600 700 800
180°
120°
90°
60°
30°
To t a l RM S O u t p u t C u r re n t ( A )
Maximum Total On-state Power Loss (W)
Conduction Angle
VSK.500.. Se ries
Pe r M o d u le
T = 130°C
J
020406080100120
Maximum Allowable Ambient Temperature (°C)
R=0.01K/W-DeltaR
0.02K/W
0.03K/W
0.05K
/W
0.08K
/W
0.12K
/W
0.2K
/W
thS
A
0
500
1000
1500
2000
2500
3000
0 200 400 600 800 1000
Total Output Current (A)
Maximum Total Power Loss (W)
180°
(Sine)
180°
(Rect)
2 x VSK.500.. Se rie s
Si n g l e Ph a se Br i d g e
Connected
T = 130°C
J
0 20406080100120
Maximum Allowable Ambient Temperature (°C)
R=0.01K/W-DeltaR
0.02K/W
0.03K
/W
0.05K
/W
0.08K
/W
0.2K
/W
thS
A
0
500
1000
1500
2000
2500
3000
3500
4000
4500
0 250 500 750 1000 1250 1500
Total Output Current (A)
Maximum Total Power Loss (W)
120°
(Rect)
3 x VSK.500.. Serie s
Th r e e Ph a se Br i d g e
Connected
T = 1 3 0 ° C
J
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94420
6DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 02-Jul-10
VSKT500-..PbF, VSKH500-..PbF, VSKL500-..PbF
Vishay Semiconductors Thyristor/Diode and Thyristor/Thyristor
(SUPER MAGN-A-PAK Power Modules), 500 A
Fig. 10 - On-State Voltage Drop Characteristics Fig. 11 - Thermal Impedance ZthJC Characteristics
Fig. 12 - Gate Characteristics
ORDERING INFORMATION TABLE
Note
• To order the optional hardware go to www.vishay.com/doc?95172
100
1000
10000
0.5 1 1.5 2 2.5 3 3.5 4 4.5
T = 25°C
J
Instantaneous On-state Current (A)
Instantaneous On-state Voltage (V)
T = 1 3 0 ° C
J
VSK.500.. Se rie s
Pe r Ju n c t i o n
0.001
0.01
0.1
0.001 0.01 0.1 1 10 100
Sq u a r e W a v e Pu l se D u r a t i o n ( s)
thJC
Tra n si e n t Thermal Impedance Z (K/ W)
VSK.500.. Series
Pe r Ju n c t i o n
St e a d y St a t e V a l u e :
R = 0.065 K/ W
(DC Operation)
thJC
0.1
1
10
100
0.001 0.01 0.1 1 10 100
VGD
IGD
(b)
(a)
Tj =2 5 ° C
Tj = - 4 0 ° C
(2) (3)
In st a nt a n e o u s G a t e C u rr e n t ( A )
Instantaneous Gate Voltage (V)
a) Recommended load line for
b) Recommended load line for
<=30% rated di/dt : 10V, 10ohms
rated di/dt : 20V, 10ohms; tr<=1 µs
tr<=1 µs
(1)
(1) PGM = 10W, tp = 4ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(4) PGM = 60W, tp = 0.66ms
Rectangular gate pulse
Tj = 1 3 0 ° C
VSK.500.. Series Frequency Limited by PG(AV)
(4)
1- Module type
2- Circuit configuration (see end of datasheet)
3- Current rating
4- Voltage code x 100 = VRRM (see Voltage Ratings table)
5- Lead (Pb)-free
Device code
51324
VSK T 500 - 16 PbF
Document Number: 94420 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 02-Jul-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 7
VSKT500-..PbF, VSKH500-..PbF, VSKL500-..PbF
Thyristor/Diode and Thyristor/Thyristor
(SUPER MAGN-A-PAK Power Modules), 500 A Vishay Semiconductors
CIRCUIT CONFIGURATION
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95283
VSKT
+
6 (G2)
-
5 (G1)
~
1
2
3
7 (K2)4 (K1)
VSKL
+
6 (G2)
-
~
1
2
3
7 (K2)
VSKH
+
-
5 (G1)
~
1
2
3
4 (K1)
Document Number: 95283 For technical questions, contact: indmodules@vishay.com www.vishay.com
Revision: 20-Mar-08 1
Super MAGN-A-PAK Thyristor/Diode
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in millimeters (inches)
52 (2.05)
60.0 (2.36)
48.0 (1.89)
31.0
(1.22)
50.0
(1.97)
44.0
(1.73)
M10
Fast-on tabs
2.8 x 0.8 (0.11 x 0.03)
20.1
(0.78)
36.4 (1.14) 4.5 (0.20)
54
6
5, 6 = Gate
4, 7 = Cathode
7
28.0
(1.10)
26.0
(0.98)
26.0
(0.98)
112.0 (4.41)
124.0 (4.88)
149.0 (5.67)
1.0 (0.039)
32
1
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 12-Mar-12 1Document Number: 91000
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
